JP2012142380A - 原料供給装置及び成膜装置 - Google Patents
原料供給装置及び成膜装置 Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】気化器11に近接して液抜き機構50を設けて、原料供給管15の上端をこの液抜き機構50の第2の原料供給バルブ74におけるバイパス流路54に接続すると共に、この第2の原料供給バルブ74の上端側からN2ガス及びオクタンが供給されるように各バルブ18を配置する。そして、原料供給管15の下方側に別の液抜き機構50を設けて、当該液抜き機構50に原料貯留部14から伸びる供給管14a及び液体材料を排出するための第1の原料排出管61を接続して、原料供給管15内の液抜きを行う場合には、当該原料供給管15内に対して上方側から下方側に向かってN2ガスやオクタンを供給する。
【選択図】図1
Description
特許文献1、2には、上方側から下方側に向かって液体が流れるように原料供給管やバルブを配置する技術について記載されているが、既述の課題には触れられていない。
貯留部内の液体原料を気化器にて気化させ、気化されたガスを半導体製造用の反応容器内に供給するための原料供給装置において、
上端側及び下端側に夫々前記気化器及び前記貯留部が接続されると共に上下に伸びる立ち上がり管路を有する原料供給管と、
前記立ち上がり管路の下端側から分岐して設けられた第1の原料排出管と、
前記原料供給管内の液体原料を押し出して前記第1の原料排出管に排出するために、前記立ち上がり管路の上端側に接続された、パージ用ガス及び洗浄液の一方を供給するための洗浄流体供給管と、
前記原料供給管における第1の原料排出管との接続部分よりも貯留部側、及び第1の原料排出管に夫々設けられた第1の原料供給バルブ、及び第1の原料排出バルブと、
前記洗浄流体供給管に設けられた洗浄流体供給バルブと、を備え、
液体原料を前記気化器に供給するときには、前記第1の原料供給バルブを開き、かつ第1の原料排出バルブ及び洗浄流体バルブを各々閉じた状態とし、また液体原料を排出するときには、前記第1の原料供給バルブを閉じ、かつ第1の原料排出バルブ及び洗浄流体供給バルブを各々開いた状態とするように操作されることを特徴とする。
上下方向に伸びる流路及び横方向に伸びる流路の合流点に設けられた三方弁からなる第2の原料供給バルブを備え、
前記原料供給管の立ち上がり管路の上端側は、前記第2の原料供給バルブの横方向の流路に接続され、
前記洗浄流体供給バルブは、前記上下方向に伸びる流路における前記第2の原料供給バルブよりも上方に設けられ、
前記第2の原料供給バルブは、液体原料を前記気化器に供給するときには、前記横方向に伸びる流路と下方に伸びる流路とを連通させ、液体原料を前記立ち上がり管路を介して排出するときには、前記横方向に伸びる流路と上方に伸びる流路とを連通させ、液体原料を気化器側に排出させるときには、前記上方向に伸びる流路と下方に伸びる流路とを連通させるように操作される構成。
前記第2の原料排出バルブにおける横方向の流路には、気化器に向かう原料供給管が接続され、
前記第2の原料排出バルブから下方に伸びる流路は第2の原料排出管として構成され、
前記第2の原料排出バルブは、液体原料を前記気化器に供給するときには、前記第2の原料排出バルブから上方に伸びる流路と横方向に伸びる流路とを連通させ、液体原料を排出させるときには、前記第2の原料排出バルブから上方に伸びる流路と下方に伸びる流路とを連通させるように操作される構成。
前記ガス供給バルブから上方に伸びる流路は、前記洗浄流体供給バルブの上端側に接続され、
前記ガス供給バルブから横方向に伸びる流路は、前記ガスを供給するガス供給管が接続され、
前記ガス供給バルブから下方に伸びる流路は、配管を洗浄するための洗浄液を供給するための洗浄液供給管が接続されている構成。
前記洗浄液供給バルブから横方向に伸びる流路には、洗浄液供給管が接続され、
前記洗浄液供給バルブから下方に伸びる流路には、洗浄液排出管が接続されている構成。
前記第1の原料供給バルブは、上下方向に伸びる流路及び横方向に伸びる流路の合流点に設けられた三方弁からなり、
前記第1の原料排出バルブは、前記第1の原料供給バルブよりも下方側に設けられると共に、当該第1の原料排出バルブの上端側が前記第1の原料供給バルブの下端側に接続され、
前記貯留部は、前記第1の原料供給バルブの横方向の流路に接続され、
前記第1の原料排出管は、前記第1の原料排出バルブの下端側に接続されている構成。
この流体排出バルブの下方側に設けられ、上下方向に伸びる流路及び横方向に伸びる流路の合流点に位置する三方弁からなる排液吸入バルブと、
この排液吸入バルブの下方側に設けられた第2の流体排出バルブと、を備え、
前記第1の流体排出バルブの上端側には、前記第1の原料排出管が接続され、
前記第1の流体排出バルブの側方側の流路には、前記第2の原料排出管及び前記洗浄液排出管が接続され、
前記排液吸入バルブの側方側の流路には、排気機構が接続され、
前記第2の流体排出バルブの下端側には、排液部が接続され、
液体原料、洗浄液及びパージガスの少なくとも1つを含む流体を前記排気機構により吸引する時は、前記排液吸入バルブの上方に伸びる流路と横方向に伸びる流路とを連通させ、かつ第2の流体排出バルブを閉じると共に、前記第1の流体排出バルブの下方に伸びる流路と上方に伸びる流路及び横方向に伸びる流路の少なくとも一方とを連通させ、
前記流体を前記排液部に排出する時は、前記排液吸入バルブの横方向の流路を閉じると共に、前記第2の流体排出バルブ及び前記排液吸入バルブの各々の上下方向に伸びる流路と、前記第1の流体排出バルブの下方に伸びる流路と上方に伸びる流路及び横方向に伸びる流路の少なくとも一方とを連通させる構成。
前記原料供給管、前記第1の原料排出管、前記第2の原料排出管及び前記洗浄液排出管の少なくとも1つの配管には、当該配管内の圧力を検出するための圧力検出部が設けられている構成。
この原料供給装置から供給される液体材料を気化するための気化器と、
この気化器において液体材料を気化して得られた処理ガスを、内部に収納した基板に対して供給するための反応容器と、を備えたことを特徴とする。
先ず、図15に示すように、第2の液抜き機構50b及び気化器11から液体原料を洗浄液により排出する。即ち、第2の原料供給バルブ74を閉止することにより、第2の液抜き機構50bへの液体原料の供給を停止して(ステップS1)、気化器11と反応管12との間のバルブVを閉止すると共に、VENT配管36のバルブVを開放する。また、図16に示すように、洗浄流体供給バルブ75及び洗浄液供給バルブ78を各々開放して、第2の原料排出バルブ76、ガス供給バルブ77及びバルブ79を各々閉止する。第2の液抜き機構50b内に残っていた液体原料は、洗浄液供給管19から供給される洗浄液によりノズル31側へと押し出されて、この洗浄液と共に、ガス供給管42から供給される清浄ガス(キャリアガス)により気化器11に霧化される。これら液体原料及び洗浄液の気化により生成した混合ガスは、既述のVENT配管36を介して真空ポンプ27に向かって排気されていく。
ここで、原料供給管15には、図25に示すように、液体原料が残っているので、以下のように当該原料供給管15から液抜きを行う。先ず、供給管14aのバルブVを閉じて、次いで図26に示すように、第2の液抜き機構50bにおける第2の原料排出バルブ76を開放する。また、第3の液抜き機構50cにおいて、図27に示すように、第1の流体排出バルブ80及び第2の流体排出バルブ82を各々開放すると共に、排液吸入バルブ81を閉止状態に設定する。
次に、第1の液抜き機構50aよりも原料貯留部14側の供給管14a内の液抜き及び清浄化を行う(ステップS4)。即ち、図40及び図41に示すように、第1の液抜き機構50aにおけるバルブ73を閉止すると共に、第1の原料供給バルブ72開放する。また、既述の図29のように、第2の液抜き機構50bの各バルブ18(74〜79)の開閉状態を設定する。そして、原料貯留部14側の供給管14aのバルブVを開放すると、第1の原料供給バルブ72のバイパス流路54に残っていた液体材料は、清浄ガスの圧力によって、当該原料貯留部14側に押し戻されて行く。
また、原料供給管15から液抜きを行った時に、第1の液抜き機構50aの液体材料が残る部位が第1の原料供給バルブ72のバイパス流路54だけとなるようにバルブ18を配置しているので、当該部位からの液抜きや清浄化を容易に且つ速やかに行うことができる。
また、気化器11のメンテナンスを行うために既述のステップS1の液抜きを行う場合、従来の手法では液抜きに十数時間程度必要であったが、本発明では数時間程度に短縮できる。
既述の例では、圧力検出部66を第1の原料排出管61に設けたが、この圧力検出部66は、第1の原料排出管61に代えて、原料供給管15及び第2の原料排出管62のいずれかに設けても良いし、あるいはこれら第1の原料排出管61、原料供給管15及び第2の原料排出管62の少なくとも1箇所に設けても良い。
また、気化器11及び原料供給装置13を各々2組ずつ設けて、互いに異なる液体材料をウエハWに交互に供給して積層膜を形成しても良い。更に、以上の例では、液抜き機構50を4箇所に設けたが、少なくとも第2の液抜き機構50bを設けておけば良い。
また、既述の例においては、制御部1を介して原料供給管15内の液抜きや清浄化を行ったが、作業者がマニュアル作業でこれら液抜きや清浄化を行っても良い。この場合には、作業者は、バルブ18(V)の開閉順序の記載された作業手順書などに基づいて、操作画面や操作パネルに配置された各バルブ18(V)に対応するバルブ開閉ボタン(図示せず)を押して、既述の各ステップを進行させることになる。
11 気化器
12 反応管
13 原料供給装置
14 原料貯留部
15 原料供給管
16 ガス貯留部
17 洗浄液貯留部
71〜82 バルブ
19 洗浄液供給管
50 液抜き機構
Claims (9)
- 貯留部内の液体原料を気化器にて気化させ、気化されたガスを半導体製造用の反応容器内に供給するための原料供給装置において、
上端側及び下端側に夫々前記気化器及び前記貯留部が接続されると共に上下に伸びる立ち上がり管路を有する原料供給管と、
前記立ち上がり管路の下端側から分岐して設けられた第1の原料排出管と、
前記原料供給管内の液体原料を押し出して前記第1の原料排出管に排出するために、前記立ち上がり管路の上端側に接続された、パージ用ガス及び洗浄液の一方を供給するための洗浄流体供給管と、
前記原料供給管における第1の原料排出管との接続部分よりも貯留部側、及び第1の原料排出管に夫々設けられた第1の原料供給バルブ、及び第1の原料排出バルブと、
前記洗浄流体供給管に設けられた洗浄流体供給バルブと、を備え、
液体原料を前記気化器に供給するときには、前記第1の原料供給バルブを開き、かつ第1の原料排出バルブ及び洗浄流体バルブを各々閉じた状態とし、また液体原料を排出するときには、前記第1の原料供給バルブを閉じ、かつ第1の原料排出バルブ及び洗浄流体供給バルブを各々開いた状態とするように操作されることを特徴とする原料供給装置。 - 上下方向に伸びる流路及び横方向に伸びる流路の合流点に設けられた三方弁からなる第2の原料供給バルブを備え、
前記原料供給管の立ち上がり管路の上端側は、前記第2の原料供給バルブの横方向の流路に接続され、
前記洗浄流体供給バルブは、前記上下方向に伸びる流路における前記第2の原料供給バルブよりも上方に設けられ、
前記第2の原料供給バルブは、液体原料を前記気化器に供給するときには、前記横方向に伸びる流路と下方に伸びる流路とを連通させ、液体原料を前記立ち上がり管路を介して排出するときには、前記横方向に伸びる流路と上方に伸びる流路とを連通させ、液体原料を気化器側に排出させるときには、前記上方向に伸びる流路と下方に伸びる流路とを連通させるように操作されることを特徴とする請求項1記載の原料供給装置。 - 前記上下方向に伸びる流路における前記第2の原料供給バルブの下方側には、当該上下方向に伸びる流路及び横方向に伸びる流路の合流点に位置する三方弁からなる第2の原料排出バルブを設け、
前記第2の原料排出バルブにおける横方向の流路には、気化器に向かう原料供給管が接続され、
前記第2の原料排出バルブから下方に伸びる流路は第2の原料排出管として構成され、
前記第2の原料排出バルブは、液体原料を前記気化器に供給するときには、前記第2の原料排出バルブから上方に伸びる流路と横方向に伸びる流路とを連通させ、液体原料を排出させるときには、前記第2の原料排出バルブから上方に伸びる流路と下方に伸びる流路とを連通させるように操作されることを特徴とする請求項2記載の原料供給装置。 - 上下方向に伸びる流路及び横方向に伸びる流路の合流点に設けられた三方弁からなり、配管中の液体を排出するためのガスを供給するためのガス供給バルブを備え、
前記ガス供給バルブから上方に伸びる流路は、前記洗浄流体供給バルブの上端側に接続され、
前記ガス供給バルブから横方向に伸びる流路は、前記ガスを供給するガス供給管が接続され、
前記ガス供給バルブから下方に伸びる流路は、配管を洗浄するための洗浄液を供給するための洗浄液供給管が接続されていることを特徴とする請求項2または3に記載の原料供給装置。 - 前記ガス供給バルブから下方に伸びる流路には、当該下方側に伸びる流路及び横方向に伸びる流路の合流点に設けられた三方弁からなる洗浄液供給バルブが設けられ、
前記洗浄液供給バルブから横方向に伸びる流路には、洗浄液供給管が接続され、
前記洗浄液供給バルブから下方に伸びる流路には、洗浄液排出管が接続されていることを特徴とする請求項4に記載の原料供給装置。 - 前記第1の原料供給バルブは、上下方向に伸びる流路及び横方向に伸びる流路の合流点に設けられた三方弁からなり、
前記第1の原料排出バルブは、前記第1の原料供給バルブよりも下方側に設けられると共に、当該第1の原料排出バルブの上端側が前記第1の原料供給バルブの下端側に接続され、
前記貯留部は、前記第1の原料供給バルブの横方向の流路に接続され、
前記第1の原料排出管は、前記第1の原料排出バルブの下端側に接続されていることを特徴とする請求項1ないし5のいずれか一つに記載の原料供給装置。 - 上下方向に伸びる流路及び横方向に伸びる流路の合流点に設けられた三方弁からなる第1の流体排出バルブと、
この流体排出バルブの下方側に設けられ、上下方向に伸びる流路及び横方向に伸びる流路の合流点に位置する三方弁からなる排液吸入バルブと、
この排液吸入バルブの下方側に設けられた第2の流体排出バルブと、を備え、
前記第1の流体排出バルブの上端側には、前記第1の原料排出管が接続され、
前記第1の流体排出バルブの側方側の流路には、前記第2の原料排出管及び前記洗浄液排出管が接続され、
前記排液吸入バルブの側方側の流路には、排気機構が接続され、
前記第2の流体排出バルブの下端側には、排液部が接続され、
液体原料、洗浄液及びパージガスの少なくとも1つを含む流体を前記排気機構により吸引する時は、前記排液吸入バルブの上方に伸びる流路と横方向に伸びる流路とを連通させ、かつ第2の流体排出バルブを閉じると共に、前記第1の流体排出バルブの下方に伸びる流路と上方に伸びる流路及び横方向に伸びる流路の少なくとも一方とを連通させ、
前記流体を前記排液部に排出する時は、前記排液吸入バルブの横方向の流路を閉じると共に、前記第2の流体排出バルブ及び前記排液吸入バルブの各々の上下方向に伸びる流路と、前記第1の流体排出バルブの下方に伸びる流路と上方に伸びる流路及び横方向に伸びる流路の少なくとも一方とを連通させることを特徴とする請求項5に記載の原料供給装置。 - 前記原料供給管、前記第1の原料排出管、前記第2の原料排出管及び前記洗浄液排出管の少なくとも1つの配管には、当該配管内の圧力を検出するための圧力検出部が設けられていることを特徴とする請求項7に記載の原料供給装置。
- 請求項1ないし8のいずれか一つに記載の原料供給装置と、
この原料供給装置から供給される液体材料を気化するための気化器と、
この気化器において液体材料を気化して得られた処理ガスを、内部に収納した基板に対して供給するための反応容器と、を備えたことを特徴とする成膜装置。
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JP5573666B2 (ja) | 2014-08-20 |
CN102560430A (zh) | 2012-07-11 |
CN102560430B (zh) | 2015-01-28 |
US20120160172A1 (en) | 2012-06-28 |
TWI506151B (zh) | 2015-11-01 |
TW201247911A (en) | 2012-12-01 |
KR20120075420A (ko) | 2012-07-06 |
KR101463295B1 (ko) | 2014-11-18 |
US9080238B2 (en) | 2015-07-14 |
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