WO2021054135A1 - 気化供給装置 - Google Patents
気化供給装置 Download PDFInfo
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- WO2021054135A1 WO2021054135A1 PCT/JP2020/033395 JP2020033395W WO2021054135A1 WO 2021054135 A1 WO2021054135 A1 WO 2021054135A1 JP 2020033395 W JP2020033395 W JP 2020033395W WO 2021054135 A1 WO2021054135 A1 WO 2021054135A1
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- vaporization
- heater
- unit
- preheating
- block
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
- B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
- B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Definitions
- the present invention relates to a vaporization supply device used in a semiconductor manufacturing apparatus, a chemical plant, a pharmaceutical industry facility, etc., and particularly provides a preheating section for preheating a liquid raw material and a vaporizing section for vaporizing a liquid raw material heated by the preheating section. Regarding the equipped vaporization supply device.
- a vaporization supply apparatus for supplying a raw material gas to a process chamber has been used (see, for example, Patent Documents 1 to 3). ..
- a liquid raw material such as TEOS (Tetraethyl orthosilicate) or HCDS (Hexachlorodisilane) is stored in a liquid storage tank, and a pressurized inert gas is supplied to the liquid storage tank to supply the liquid raw material at a constant pressure.
- a pressurized inert gas is supplied to the liquid storage tank to supply the liquid raw material at a constant pressure.
- the supplied liquid raw material is vaporized by a heater arranged around the vaporization chamber, and the vaporized gas is controlled to a predetermined flow rate by a flow rate control device and supplied to the semiconductor manufacturing device.
- the vaporization supply device is configured to be able to heat the liquid raw material to a relatively high temperature, for example, a temperature of 200 ° C. or higher.
- the vaporization supply device in order to prevent condensation (reliquefaction) of the vaporized raw material, it is required to supply gas to the process chamber through a flow path heated to a high temperature. Furthermore, in order to prevent the temperature of the vaporizer from dropping due to the liquid raw material supplied to the vaporizer and to efficiently vaporize the organometallic material, the liquid raw material may be preheated before being supplied to the vaporizer. is there. Therefore, in the vaporization supply device, a heater for heating the fluid heating unit (vaporizer or the like) provided with the flow path or the fluid accommodating unit to a high temperature is arranged at a necessary place.
- a vaporization supply device provided with a preheating unit that preheats a liquid raw material
- the vaporization supply devices described in Patent Document 4 and Patent Document 5 are known.
- the vaporization supply device includes a preheating unit that preheats the raw material liquid, a vaporizer that vaporizes the raw material liquid heated by the preheating unit, and a high temperature pressure type flow rate control that controls the flow rate of the vaporized gas. It is equipped with a device.
- the preheating unit provided for preheating the liquid raw material is maintained at a temperature equal to or lower than the boiling point of the liquid raw material, and the vaporization unit is maintained at a temperature equal to or higher than the boiling point of the liquid raw material, for example. Be maintained.
- the boiling point of the fluid fluctuates depending on the pressure of the fluid, even if the temperature of the preheating part becomes higher than the boiling point at the normal pressure (atmospheric pressure) of the liquid raw material, the liquid does not vaporize depending on the pressure of the liquid raw material. State may be maintained.
- the vaporized portion may be set to a temperature below the boiling point.
- the set temperature of the vaporization unit is usually set higher than the set temperature of the preheating unit.
- the pressure type flow rate control device that controls the flow rate of the vaporized liquid raw material is maintained at a temperature higher than the boiling point of the liquid raw material, typically higher than the temperature of the vaporized portion.
- the vaporization supply device provided with the preheating section and the vaporizing section, since the preheating section, the vaporizing section, and the pressure type flow rate control device are arranged in series, there is a problem that the installation area is inevitably widened. .. Therefore, it may not be possible to install the vaporization supply device in the vicinity of the process chamber.
- the present invention has been made to solve the above problems, and a main object of the present invention is to provide a vaporization supply device capable of narrowing the installation area.
- the vaporization supply device is arranged in a preheating section for preheating the liquid raw material and a preheating section above the preheating section, and is delivered from the preheating section.
- a vaporization unit that heats and vaporizes the liquid raw material
- a flow rate control device that is arranged above the vaporization unit and controls the flow rate of gas sent from the vaporization unit, a preheating unit, and the vaporization unit.
- a heater for heating the flow rate control device.
- the heater includes a first heater for heating the preheating unit, a second heater for heating the vaporization unit, and a third heater for heating the flow rate control device, and the preheating unit.
- the vaporization unit and the flow rate control device are configured to be heated independently.
- the first heater comprises a first side heater that heats the side surface of the preheating portion
- the second heater comprises a second side heater that heats the side surface of the vaporization portion.
- the three heaters include a third side heater that heats the side surface of the portion of the flow control device through which the gas flows.
- the second heater further comprises a second bottom surface heat that heats the bottom surface of the vaporized portion, and the third heater heats the bottom surface of a gas-flowing portion of the flow control device. Further equipped with a heater.
- heat insulating members are provided between the second bottom surface heater and the preheating portion and between the third bottom surface heater and the vaporizing portion, respectively.
- the preheating part and the vaporizing part communicate with each other via a liquid filling on-off valve and a three-way valve, and the liquid filling on-off valve and the three-way valve are the preheating part and the vaporizing part. Placed on top of.
- the preheating unit, the vaporization unit, and the flow rate control device are stacked in the vertical direction to form a three-stage structure, the preheating unit, the vaporization unit, and the flow rate control device are used.
- the installation area can be reduced as compared with the conventional vaporization supply device in which the two are arranged in series. As a result, the vaporization supply device can be reliably and satisfactorily installed even in the vicinity of the process chamber where the installation space is small.
- FIG. 1 to 4 show a vaporization supply device 1 according to an embodiment of the present invention, and the vaporization supply device 1 is arranged on a preheating unit 2 for preheating the liquid raw material L and an upper portion of the preheating unit 2.
- a vaporization unit 3 that heats and vaporizes the preheated liquid raw material L sent from the preheating unit 2, and a flow rate that is arranged above the vaporization unit 3 and controls the flow rate of the gas G sent from the vaporization unit 3.
- a control device 4 and a heater 5 for heating the preheating unit 2, the vaporization unit 3, and the flow rate control device 4 to different temperatures are provided, and the liquid raw material L is preheated by the preheating unit 2 and preheated.
- the liquid raw material L is vaporized by the vaporization unit 3 to generate a gas G to be used in a semiconductor manufacturing apparatus or the like, and the generated gas G is controlled by the flow rate control device 4.
- the heater 5 has a first heater 6 that heats the preheating unit 2 from the side surface, a second heater 7 that heats the vaporization unit 3 from the side surface and the bottom surface, and a second heater 7 that heats the flow rate control device 4 from the side surface and the bottom surface. It is provided with 3 heaters 8 and is configured to independently heat the preheating unit 2, the vaporization unit 3, and the flow rate control device 4.
- the preheating unit 2 is configured by connecting a first preheating block 2A made of stainless steel and a second preheating block 2B also made of stainless steel.
- the first preheating block 2A is formed in a horizontally long thick flat plate-shaped rectangular parallelepiped, and inside the first preheating block 2A, a linear flow path 2a from one end to the other end and a linear flow path 2a are formed.
- a rectangular parallelepiped liquid storage chamber 2b is formed in the middle of the flow path 2a to store the liquid raw material L.
- the first preheating block 2A is formed by joining two members divided into left and right at the central portion by welding W, and one end (right end in FIG. 4) of the first preheating block 2A is formed. An inflow port for the liquid raw material L is formed.
- the liquid raw material L pumped from the liquid storage tank (not shown) at a predetermined pressure is stored in the liquid storage chamber 2b, and the first preheating block 2A is stored before being supplied to the vaporization unit 3. Preheat using the heater 6.
- a heating accelerator (not shown) may be arranged in the liquid storage chamber 2b of the first preheating block 2A in order to increase the surface area.
- the second preheating block 2B is formed in a vertically long rectangular parallelepiped, and an L-shaped flow path 2a communicating with the flow path 2a of the first preheating block 2A is formed inside the second preheating block 2B. Has been done.
- the second preheating block 2B is connected to the other end of the first preheating block 2A by a bolt (not shown) or the like, and is a flow path between the first preheating block 2A and the second preheating block 2B.
- a gasket 9 with a through hole is interposed in the 2a communication portion. Further, an outlet for the liquid raw material L is formed on the upper surface of the second preheating block 2B.
- the first preheating block 2A and the second preheating block 2B forming the preheating portion 2 are arranged in the upper part of the base frame 10 in a connected state, and the lower surface of the first preheating block 2A and the base.
- a plate-shaped heat insulating member 11 is interposed between the upper surface of the frame 10 and the lower surface of the second preheating block 2B and the upper surface of the base frame 10.
- the heat insulating member 11 may be sandwiched and fixed between the preheating unit 2 (first preheating block 2A and second preheating block 2B) and the base frame 10, or may be fixed by using a jig or the like. You may.
- a panel material made of resin for example, PEEK (PolyEtherEtherKetone) is used as the heat insulating member 11.
- the thickness of the heat insulating member 11 may be appropriately selected according to the required heat insulating property, but may be, for example, about 5 mm to 10 mm.
- the heat insulating member 11 is not limited to the one made of PEEK described above, and may be formed of any material as long as it can block heat, and the material or the like is appropriately selected according to the temperature. You may. As the heat insulating member 11, a known vacuum heat insulating panel can also be used.
- first preheating block 2A and the second preheating block 2B forming the preheating unit 2 are formed separately, but in other embodiments, the first preheating block 2B is formed separately.
- the 2A and the second preheating block 2B may be integrally formed.
- the vaporization unit 3 includes a stainless steel vaporization block 3A, and a liquid filling on-off valve 12, a stainless steel flow path block 13, and a purging three-way valve are provided in the second preheating block 2B of the preheating unit 2. It is connected via 14.
- the vaporization block 3A is formed in a horizontally long thick flat plate-shaped rectangular parallelepiped, and a rectangular parallelepiped vaporization chamber 3a is formed inside the vaporization block 3A.
- the vaporization block 3A is formed by joining two members divided into upper and lower parts at the central portion by welding W, and a purge is performed on the upper surface of one end portion (left end portion in FIG. 4) of the vaporization block 3A.
- the inflow port 3b of the liquid raw material L communicating with the three-way valve 14 and communicating with the vaporization chamber 3a, and the outflow port 3c of the gas G communicating with the flow control device 4 and communicating with the vaporization chamber 3a. are formed respectively.
- the length of the vaporization block 3A (the length in the left-right direction in FIG. 4) is set shorter than the length of the first preheating block 2A, and the width of the vaporization block 3A (the length in the front-rear direction in FIG. 4) is set. , The width of the first preheating block 2A is set to be the same.
- the vaporization block 3A forming the vaporization unit 3 is arranged above the first preheating block 2A of the preheating unit 2, and is located between the upper surface of the first preheating block 2A and the lower surface of the vaporization block 3A. Is provided with a plate-shaped heat insulating member 11'and a second bottom surface heater 7B of the second heater 7 described later.
- the first preheating block is in contact with the upper surface of the first preheating block 2A
- the second bottom surface heater 7B is in contact with the upper surface of the heat insulating member 11'and the lower surface of the vaporization block 3A. It is interposed between 2A and the vaporization block 3A.
- the heat insulating member 11'and the second bottom surface heater 7B may be sandwiched and fixed between the first preheating block 2A and the vaporization block 3A, or may be fixed by using a jig or the like.
- a panel material made of PEEK is used as the heat insulating member 11'.
- the thickness of the heat insulating member 11' is set to be the same as that of the heat insulating member 11 interposed between the first preheating block 2A and the base frame 10.
- the vaporization unit 3 is provided with a liquid detection unit (not shown) for detecting that a liquid raw material L exceeding a predetermined amount has been supplied into the vaporization chamber 3a, and when the liquid detection unit detects a liquid, the liquid is filled. By closing the on-off valve 12, the excessive supply of the liquid raw material LL to the vaporization unit 3 may be prevented.
- a liquid detection unit as described in Patent Document 4 (International Publication No. 2016/174832), a thermometer (platinum resistance temperature detector, thermocouple, thermistor, etc.) arranged in the vaporization chamber 3a, A liquid level gauge, a load cell, or the like can be used.
- the liquid filling on-off valve 12 controls the supply amount of the liquid raw material L to the vaporization unit 3 according to the pressure in the vaporization chamber 3a of the vaporization block 3A, and the liquid filling on-off valve 12 is air pressure.
- An air-driven valve that controls the opening and closing of the valve body is used.
- the liquid filling on-off valve 12 is fixed to the upper surface of the second preheating block 2B by a fixing bolt 15 so that its inlet is connected to the outlet of the liquid raw material L of the second preheating block 2B in a communication manner.
- a gasket with a hole (not shown) is interposed between the inlet of the on-off valve 12 for liquid filling and the outlet of the second preheating block 2B, and the gasket with a hole is a fixing bolt.
- a seal between the flow paths is formed by the fastening force of 15.
- the flow path block 13 connects the outlet of the liquid filling on-off valve 12 and the inlet of the purging three-way valve 14 in a communicating manner, and the flow path 13a of the liquid raw material L is inside the flow path block 13. Is formed.
- the flow path block 13 is fixed to the lower surfaces of the liquid filling on-off valve 12 and the purging three-way valve 14 in a state where the flow path 13a communicates with the outlet of the liquid filling on-off valve 12 and the inlet of the purging three-way valve 14, respectively.
- the purging three-way valve 14 is for flowing purge gas to the flow rate control device 4, and includes an inlet of the liquid raw material L, an outlet of the liquid raw material L, and an inlet 14a of the purge gas.
- an air-driven valve that controls the opening and closing of the valve body by using air pressure is used.
- the purge gas inlet 14a is closed and the inlet of the liquid raw material L and the liquid.
- the outlet of the raw material L communicates with each other, and when the valve body is opened, the inlet 14a of the purge gas and the outlet of the liquid raw material L communicate with each other.
- the purging three-way valve 14 is fixed to the upper surface of one end of the vaporization block 3A with a fixing bolt 15 in a state where its outlet communicates with the inflow port 3b of the liquid raw material L of the vaporization block 3A.
- a gasket with a through hole (not shown) is interposed between the outlet of the vaporization block 3A and the inflow port 3b of the liquid raw material L of the vaporization block 3A, and the gasket with a through hole seals between the flow paths by the fastening force of the fixing bolt 15. Is forming.
- the flow rate control device 4 is a conventionally known high temperature pressure type flow rate control device 4, and as will be described later, the flow rate of the gas G flowing through the orifice member 20 is controlled by using a control valve 22. It can be controlled by adjusting the upstream pressure P1 of the orifice member 20.
- the pressure type flow control device 4 is connected to the upstream valve block 16 forming the gas flow path 16a and the gas flow path 16a connected to the upstream valve block 16 and communicated with the gas flow path 16a of the upstream valve block 16.
- the intermediate valve block 16 ′ forming the valve chamber 16b, and the downstream valve block 16 ′′ forming the gas flow path 16a connected to the intermediate valve block 16 ′ and communicating with the gas flow path 16a of the intermediate valve block 16 ′.
- a piezoelectric drive element (not shown) that drives the metal diaphragm valve body 18, a pressure detector 19 that detects the pressure in the gas flow path 16a on the upstream side of the metal diaphragm valve body 18, and a metal diaphragm valve body 18
- For flow control to detect the pressure in the gas flow path 16a between the orifice member 20 provided in the gas flow path 16a on the downstream side of the above and the metal diaphragm valve body 18 and the orifice member 20 in which micropores are formed. It includes a pressure detector 21.
- the metal diaphragm valve body 18 abuts on the valve seat to close the gas flow path 16a, while energizing the piezoelectric drive element.
- the piezoelectric drive element is extended, and the metal diaphragm valve body 18 is configured to return to the original inverted dish shape by self-elastic force to open the gas flow path 16a.
- FIG. 5 is a diagram schematically showing a configuration example of the pressure type flow rate control device 4.
- the pressure detector 19 the orifice member 20, the control valve 22 composed of the metal diaphragm valve body 18 and the piezoelectric drive element, and the orifice member 20 and the control valve 22 are provided.
- the flow rate control pressure detector 21 and the temperature detector 23 are provided.
- the orifice member 20 is provided as a throttle portion, and a critical nozzle or a sound velocity nozzle can be used instead.
- the diameter of the orifice or nozzle is set to, for example, 10 ⁇ m to 500 ⁇ m.
- the pressure detector 19 and the temperature detector 23 are connected to the control circuit 24 via an AD converter.
- the AD converter may be built in the control circuit 24.
- the control circuit 24 is also connected to the control valve 22, generates a control signal based on the outputs of the flow rate control pressure detector 21 and the temperature detector 23, and controls the operation of the control valve 22 by this control signal. To do.
- the pressure type flow rate control device 4 can perform the same flow rate control operation as the conventional one, and controls the flow rate based on the upstream pressure P1 (the pressure on the upstream side of the orifice member 20) by using the flow rate control pressure detector 21. can do.
- the pressure type flow rate control device 4 may also include a pressure detector (not shown) on the downstream side of the orifice member 20, and detects the flow rate based on the upstream pressure P1 and the downstream pressure P2. It may be configured as follows.
- the critical expansion condition P1 / P2 about 2 (however, P1: gas pressure on the upstream side of the throttle portion (upstream pressure), P2: gas pressure on the downstream side of the throttle portion (downstream pressure).
- P1 gas pressure on the upstream side of the throttle portion (upstream pressure)
- P2 gas pressure on the downstream side of the throttle portion (downstream pressure).
- the flow velocity of the gas G passing through the throttle is fixed at the sound velocity, and the flow rate is controlled by using the principle that the flow rate is determined by the upstream pressure P1 regardless of the downstream pressure P2.
- Predetermined formula Q K 2 ⁇ P2 m (P1-P2) n based on P1 and downstream pressure P2 (where K 2 is a constant depending on the type of fluid and fluid temperature, m and n are the actual flow rates.
- the flow rate Q can be calculated from the index) derived from the above.
- the control valve 22 is feedback-controlled so that the flow rate approaches the set flow rate input by the user.
- the flow rate obtained by calculation may be displayed as a flow rate output value.
- the pressure detector 19 provided at the upstream position of the metal diaphragm valve body 18 of the pressure type flow rate control device 4 detects the pressure of the gas G vaporized by the vaporization unit 3 and sent to the pressure type flow rate control device 4. Is what you do.
- the signal of the pressure value detected by the pressure detector 19 is constantly sent to the control circuit 24 and monitored.
- the control circuit 24 opens and closes for liquid filling.
- a predetermined amount of the liquid raw material L is supplied to the vaporization chamber 3a by opening the valve 12 for a predetermined time and then closing the valve 12.
- a three-way valve 25 for supplying purge gas, a second flow path block 26, a stop valve 27, and a third flow path block 28 are sequentially connected to the downstream valve block 16 ′′ of the pressure type flow rate control device 4.
- the purge gas supply three-way valve 25, the second flow path block 26, the stop valve 27, and the third flow path block 28 are supported by a stainless steel rectangular parallelepiped base body 29 arranged at these lower positions.
- the second flow path block 26 and the third flow path block 28 are made of stainless steel and have the same structure as the above-mentioned flow path block 13.
- the purge gas supply three-way valve 25 is for flowing the purge gas to the downstream side of the pressure type flow rate control device 4, and includes a gas G inlet, a gas G outlet, and a purge gas inlet 25a.
- a gas G inlet As the purge gas supply three-way valve 25, an air-driven valve that controls the opening and closing of the valve body by using air pressure is used, and when the valve body is closed, the purge gas inlet 25a is closed and the gas G inlet and the gas.
- the outlet of G communicates with each other, and when the valve body is opened, the inlet 25a of the purge gas and the outlet of the gas G communicate with each other.
- the inlet of the gas G communicates with the gas flow path 16a of the downstream side valve block 16 ", and the outlet of the gas G communicates with the gas flow path 26a of the second flow path block 26.
- it is fixed to the upper surface of the downstream side valve block 16 ′′ and the second flow path block 26 by a fixing bolt 15, and the gas G inlet of the purge gas supply three-way valve 25 and the gas flow of the downstream side valve block 16 ′′.
- Gaskets with through holes are interposed between the passage 16a and between the gas G outlet of the purge gas supply three-way valve 25 and the gas flow path 26a of the second flow path block 26, respectively.
- the perforated gasket forms a seal between the flow paths by the fastening force of the fixing bolt 15.
- the stop valve 27 shuts off the flow of gas G as needed, and as the stop valve 27, for example, a known air-driven valve or solenoid valve can be used.
- the stop valve 27 is in a state where the inlet of the gas G communicates with the gas flow path 26a of the second flow path block 26 and the outlet of the gas G communicates with the gas flow path 28a of the third flow path block 28. It is fixed to the upper surfaces of the two flow path blocks 26 and the third flow path block 28 by fixing bolts 15, and is between the gas G inlet of the stop valve 27 and the gas flow path 26a of the second flow path block 26 and stops.
- a gasket with a through hole (not shown) is interposed between the outlet of the gas G of the valve 27 and the gas flow path 28a of the third flow path block 28, and the gasket with a through hole is fastened with a fixing bolt 15.
- a seal is formed between the flow paths by force.
- the downstream side of the stop valve 27 is connected to, for example, a process chamber (not shown) of a semiconductor manufacturing apparatus, and when gas is supplied, the inside of the process chamber is depressurized by a vacuum pump (not shown), and a predetermined flow rate of raw material gas is used. G is supplied to the process chamber.
- the flow rate control device 4 is arranged above the vaporization block 3A so that the gas flow path 16a of the upstream valve block 16 and the gas G outlet 3c of the vaporization block 3A communicate with each other.
- a gasket 30 with a through hole is interposed between the inlet of the gas flow path 16a of the block 16 and the outflow port 3c of the gas G of the vaporization block 3A, and the gasket 30 with a through hole is a fixing bolt (not shown).
- a seal between the flow paths is formed by the fastening force.
- a plate-shaped heat insulating member 11 "and a third heater 8 described later are the third.
- the bottom surface heater 8B is interposed.
- the heat insulating member 11 ′′ is in contact with the upper surface of the vaporization block 3A
- the third bottom surface heater 8B is the upper surface of the heat insulating member 11 ′′, the lower surface of the intermediate valve block 16 ′, and the downstream side.
- the heat insulating member 11 ′′ and the third bottom surface heater 8B may be sandwiched and fixed by the vaporization block 3A and the flow rate control device 4, or may be fixed by using a jig or the like.
- a panel material made of PEEK is used as the heat insulating member 11 ′′.
- the thickness of the heat insulating member 11 ′′ is such that the heat insulating member interposed between the first preheating block 2A and the base frame 10. It is set to be the same as 11.
- the flow rate control device 4 is not limited to the pressure type flow rate control device, and may be a flow rate control device 4 of various modes.
- the first heater 6 includes both side surfaces of the first preheating block 2A and the second preheating block 2B forming the preheating portion 2, a portion of the liquid filling on-off valve 12 through which the liquid raw material L flows, and a flow path block.
- a pair of first side surface heaters 6A for heating both side surfaces of the inlet side portion of 13 is provided.
- the pair of first side surface heaters 6A includes a heating element 6a and a metal heat transfer member 6b thermally connected to the heating element 6a, and the heat generated by the heating element 6a is transferred to the heat transfer member 6b.
- the heat transfer member 6b is heated as a whole by the heating element 6a.
- the uniformly heated heat transfer member 6b can uniformly heat the preheating portion 2, a part of the liquid filling on-off valve 12, and a part of the flow path block 13 from the outside.
- the heating element 6a is composed of a rod-shaped cartridge heater, and is inserted and fixed in a small hole formed in the heat transfer member 6b.
- the heat transfer member 6b is formed of aluminum or an aluminum alloy in an L-shaped plate shape, and is in close contact with the side surfaces of the first preheating block 2A and the second preheating block 2B by fixing bolts (not shown) or the like. It is fixed at.
- the heat transfer member 6b is formed on the side surfaces of the first preheating block 2A and the second preheating block 2B, the side surface of the portion of the liquid filling on-off valve 12 through which the liquid raw material L flows, and the side surface of the inlet side portion of the flow path block 13. Each is formed to cover the size.
- the heat transfer member 6b may be a member having good heat transfer efficiency, but aluminum or an aluminum alloy, which is relatively inexpensive because there is little concern about contamination of the process, is desirable.
- the second heater 7 heats both side surfaces of the vaporization block 3A forming the vaporization portion 3, a portion through which the liquid raw material L of the purging three-way valve 14 flows, and both side surfaces of the outlet side portion of the flow path block 13. It includes a pair of second side surface heaters 7A and a second bottom surface heater 7B that heats the bottom surface of the vaporization block 3A forming the vaporization unit 3.
- the pair of second side surface heaters 7A and second bottom surface heaters 7B each include a heating element 7a and a metal heat transfer member 7b thermally connected to the heating element 7a, and the heating element 7a generates heat. Heat is conducted to the entire heat transfer member 7b, and the heating element 7a heats the heat transfer member 7b as a whole.
- the uniformly heated heat transfer member 7b can uniformly heat the vaporization unit 3, a part of the purging three-way valve 14, and a part of the flow path block 13 from the outside.
- the heating element 7a of the second side surface heater 7A and the second bottom surface heater 7B is each composed of a rod-shaped cartridge heater, and is inserted and fixed in a small hole formed in the heat transfer member 7b.
- the heat transfer member 7b of the second side surface heater 7A is formed of aluminum or an aluminum alloy in an L-shaped plate shape, and is fixed to the side surface of the vaporization block 3A in close contact with a fixing bolt (not shown) or the like. There is.
- the heat transfer member 7b of the second side surface heater 7A has a side surface of the vaporization block 3A, a side surface of the portion where the liquid raw material L of the purging three-way valve 14 flows, and a side surface of the outlet side portion of the flow path 13a of the flow path block 13, respectively. It is formed to cover the size.
- the heat transfer member 7b of the second bottom surface heater 7B is formed of aluminum or an aluminum alloy in the shape of a long plate, and the vaporization block is formed between the vaporization block 3A and the heat insulating member 11'on the first preheating block 2A. They are arranged in close contact with the bottom surface of 3A and the top surface of the heat insulating member 11'.
- the third heater 8 includes both side surfaces of the upstream valve block 16, both side surfaces of the intermediate valve block 16 ′, both side surfaces of the downstream valve block 16 ′′, and a portion through which the gas G of the purge gas supply three-way valve 25 flows.
- a pair of third side surface heaters 8A for heating both side surfaces of the second flow path block 26, a portion through which the gas G of the stop valve 27 flows, and both side surfaces of the third flow path block 28, and an intermediate valve block 16 A third bottom surface that heats the bottom surface of ′, the bottom surface of the downstream valve block 16 ′′, the bottom surface of the purge gas supply three-way valve 25, the bottom surface of the second flow path block 26, and the bottom surface of the third flow path block 28. It is equipped with a heater 8B.
- the pair of the third side heater 8A and the third bottom heater 8B each include a heating element 8a and a metal heat transfer member 8b thermally connected to the heating element 8a, and the heating element 8a generates heat. Heat is conducted to the entire heat transfer member 8b, and the heating element 8a heats the heat transfer member 8b as a whole.
- the uniformly heated heat transfer member 8b includes a portion through which the gas G of the flow control device 4 flows, a portion of the purge gas supply three-way valve 25, a second flow path block 26, a part of the stop valve 27, and a third flow path.
- the block 28 can be uniformly heated from the outside.
- the heating element 8a of the third side heater 8A and the third bottom heater 8B is composed of a rod-shaped cartridge heater, and is inserted and fixed in a small hole formed in the heat transfer member 8b.
- the heat transfer member 8b of the third side surface heater 8A is formed of aluminum or an aluminum alloy in a plate shape, and is fixed in close contact with a side surface or the like of the flow rate control device 4 by a fixing bolt (not shown) or the like.
- the heat transfer member 8b of the third side heater 8A is a side surface of the upstream valve block 16, a side surface of the intermediate valve block 16', a side surface of the downstream valve block 16", and a portion through which the gas G of the purge gas supply three-way valve 25 flows.
- the side surface, the side surface of the second flow path block 26, the side surface of the portion of the stop valve 27 through which the gas G flows, and the side surface of the third flow path block 28 are formed to cover each of the side surfaces.
- the heat transfer member 8b of the third bottom surface heater 8B is formed of aluminum or an aluminum alloy in the shape of a long plate, and insulates the intermediate valve block 16', the downstream valve block 16 ′′, the base body 29, and the vaporization block 3A. It is arranged between the member 11 ′′ and the bottom surface of the intermediate valve block 16 ′′, the bottom surface of the downstream valve block 16 ′′, the bottom surface of the base body 29, and the top surface of the heat insulating member 11 ′′.
- the inner surfaces of the heat transfer members 6b, 7b, 8b made of aluminum or aluminum alloy, that is, the preheating part 2, the vaporizing part 3, and the flow rate.
- the surface facing the control device 4 is subjected to an alumite treatment (anodizing treatment) as a surface treatment for improving heat dissipation, and the outer surfaces of the heat transfer members 6b, 7b, 8b are polished surfaces or It is a mirror-processed surface.
- the mirror-finished surface on the outside of the heat transfer members 6b, 7b, 8b is typically formed by polishing, but may be formed only by shaving.
- alumite treatment for example, hard alumite treatment
- heat dissipation can be improved, and when the heat from the heating elements 6a, 7a, 8a is in contact with each other.
- the preheating unit 2 or the vaporizing unit 3 when the preheating unit 2 or the vaporizing unit 3 is in contact with the heat transfer members 6b, 7b, 8b, the heat is conducted from the contact portion, but the heat transfer members 6b, 7b, 8b to the preheating unit 2 or When heat is transferred to the vaporization unit 3, if the inner surfaces of the heat transfer members 6b, 7b, 8b are not alumite-treated, the heat is reflected on the inner surfaces of the heat transfer members 6b, 7b, 8b due to the radiation coefficient. However, there is heat that does not move to the preheating section 2 and the vaporizing section 3.
- the emissivity is high, so that the heat is reflected on the surface in contact with the preheating section 2 and the vaporizing section 3. There is almost no heat generated, and almost all of the heat from the heat transfer members 6b, 7b, 8b is conducted to the preheating section 2 and the vaporizing section 3.
- the same effect is exhibited not only in the hard alumite treatment but also in the normal alumite treatment. If the thickness of the alumite layer is the thickness formed by the usual alumite treatment (for example, 1 ⁇ m or more), the same effect is exhibited. However, the hard alumite treatment has an advantage that it is less likely to be scratched during operation and the concern that the film is peeled off can be reduced as compared with the normal alumite treatment.
- a temperature sensor (not shown) is provided in each of the preheating unit 2, the vaporization unit 3, and the flow rate control device 4, and each heater 6, 7, and 8 is individually provided by using the control device (not shown). Since it can be controlled, the temperatures of the preheating unit 2, the vaporization unit 3, and the flow rate control device 4 can be individually controlled. Normally, the temperatures of the preheating unit 2, the vaporization unit 3, and the flow rate control device 4 are controlled so that the preheating unit 2 ⁇ vaporization unit 3 ⁇ flow rate control device 4.
- the temperature of the first heater 6 is set to, for example, about 180 ° C
- the temperature of the second heater 7 is set to, for example, about 200 ° C
- the temperature of the third heater 8 is set to, for example, about 210 ° C. ing.
- the first heater 6 that heats the preheating unit 2 is set to a temperature lower than that of the second heater 7 that heats the vaporization unit 3, and the third heater 8 that heats the flow rate control device 4 is the second heater 7. It is set to a higher temperature than. Therefore, the temperatures of the preheating unit 2, the vaporization unit 3, and the flow rate control device 4 are such that the preheating unit 2 ⁇ vaporization unit 3 ⁇ flow rate control device 4.
- rod-shaped cartridge heaters are used as the heating elements 6a, 7a, 8a of the heaters 6, 7, and 8, but various known heating elements 6a, 7a, 8a are used.
- An apparatus can be used, and for example, a planar heater (not shown) fixed to the heat transfer members 6b, 7b, 8b may be used.
- the heating elements 6a, 7a, 8a are inserted into the heat transfer members 6b, 7b, 8b from the lateral direction, but in other embodiments, the heating elements 6a, 7a, 8a may be inserted into the heat transfer members 6b, 7b, 8b from the vertical direction.
- aluminum or aluminum alloy plates are used as the heat transfer members 6b, 7b, 8b of the heaters 6, 7 and 8, but aluminum is used for the heat transfer members 6b, 7b and 8b.
- another metal material having high thermal conductivity may be used.
- the vaporization supply device 1 described above has a three-stage structure in which the preheating unit 2, the vaporization unit 3, and the flow rate control device 4 are stacked in the vertical direction, so that the preheating unit 2, the vaporization unit 3, and the pressure are formed.
- the installation area can be narrowed as compared with the conventional vaporization supply device in which the type flow rate control device 4 is arranged in series.
- the vaporization supply device 1 can individually control the heaters 6, 7, and 8 using a control device (not shown), the preheating unit 2, the vaporization unit 3, and the flow rate control device 4 are individually controlled.
- the temperature can be controlled, and the preheating of the liquid raw material L, the vaporization of the liquid raw material L, and the prevention of the reliquefaction of the vaporized raw material can be performed at appropriate temperatures.
- the vaporization supply device 1 has heat insulating members 11 ′ and 11 ′′ interposed between the preheating unit 2 and the vaporization unit 3 and between the vaporization unit 3 and the flow rate control device 4, the flow rate is controlled.
- the heat conduction from the device 4 to the vaporization unit 3 and the heat conduction from the vaporization unit 3 to the preheating unit 2 are suppressed, and the vaporization unit 3 and the preheating unit 2 can be maintained at the set temperature.
- the fluid control device according to the embodiment of the present invention can be used, for example, to supply a raw material gas to a process chamber in a semiconductor manufacturing device for MOCVD.
- Vaporization supply device 2 Preheating unit 3 Vaporization unit 4
- Flow control device 5 Heater 6 1st heater 6A 1st side heater 7 2nd heater 7A 2nd side heater 7B 2nd bottom heater 8 3rd heater 8A 3rd side heater 8B
- Heater 6 1st heater 6A 1st side heater 7 2nd heater 7A 2nd side heater 7B 2nd bottom heater 8 3rd heater 8A 3rd side heater 8B
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
2 予加熱部
3 気化部
4 流量制御装置
5 ヒータ
6 第1ヒータ
6A 第1側面ヒータ
7 第2ヒータ
7A 第2側面ヒータ
7B 第2底面ヒータ
8 第3ヒータ
8A 第3側面ヒータ
8B 第3底面ヒータ
11,11′,11″ 断熱部材
G ガス
L 液体原料
Claims (6)
- 液体原料を予加熱する予加熱部と、
前記予加熱部の上部に配置され、前記予加熱部から送出される予加熱された前記液体原料を加熱して気化させる気化部と、
前記気化部の上部に配置され、前記気化部から送出されたガスの流量を制御する流量制御装置と、
前記予加熱部、前記気化部及び前記流量制御装置を加熱するヒータと、
を備える、気化供給装置。 - 前記ヒータは、前記予加熱部を加熱する第1ヒータと、前記気化部を加熱する第2ヒータと、前記流量制御装置を加熱する第3ヒータとを備え、前記予加熱部、前記気化部及び前記流量制御装置をそれぞれ独立して加熱するように構成されている、請求項1に記載の気化供給装置。
- 前記第1ヒータは、前記予加熱部の側面を加熱する第1側面ヒータを備え、前記第2ヒータは、前記気化部の側面を加熱する第2側面ヒータを備え、前記第3ヒータは、前記流量制御装置のガスが流れる部分の側面を加熱する第3側面ヒータを備える、請求項2に記載の気化供給装置。
- 前記第2ヒータは、前記気化部の底面を加熱する第2底面ヒータを更に備え、前記第3ヒータは、前記流量制御装置のガスが流れる部分の底面を加熱する第3底面ヒータを更に備える、請求項3に記載の気化供給装置。
- 前記第2底面ヒータと前記予加熱部との間及び前記第3底面ヒータと前記気化部との間にそれぞれ断熱部材が設けられている、請求項4に記載の気化供給装置。
- 前記予加熱部と前記気化部とが、液体充填用開閉弁及び三方弁を介して連通しており、前記液体充填用開閉弁及び前記三方弁は、前記予加熱部及び前記気化部の上部に配置されている、請求項1から5のいずれかに記載の気化供給装置。
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KR1020227005683A KR20220035485A (ko) | 2019-09-19 | 2020-09-03 | 기화 공급 장치 |
US17/639,288 US11976356B2 (en) | 2019-09-19 | 2020-09-03 | Vaporized feed device |
CN202080059115.1A CN114269966A (zh) | 2019-09-19 | 2020-09-03 | 气化供给装置 |
JP2021546592A JPWO2021054135A1 (ja) | 2019-09-19 | 2020-09-03 |
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US (1) | US11976356B2 (ja) |
JP (1) | JPWO2021054135A1 (ja) |
KR (1) | KR20220035485A (ja) |
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KR20230042729A (ko) | 2020-10-31 | 2023-03-29 | 가부시키가이샤 후지킨 | 가스 공급 시스템 및 가스 공급 방법 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002001949A2 (en) * | 2000-07-04 | 2002-01-10 | Universita' Degli Studi Di Milano | Transgenic mouse for screening and for studies of the pharmacodynamics and pharmacokinetics of ligands acting on the oestrogen receptor and its intracellular receptors, and method for the preparation thereof |
JP2003031562A (ja) * | 2001-07-12 | 2003-01-31 | Tokyo Electron Ltd | 熱処理装置 |
JP2006124837A (ja) * | 2004-10-28 | 2006-05-18 | Jusung Engineering Co Ltd | 薄膜製造用装置 |
JP2012142380A (ja) * | 2010-12-28 | 2012-07-26 | Tokyo Electron Ltd | 原料供給装置及び成膜装置 |
JP2016122841A (ja) * | 2014-12-22 | 2016-07-07 | 株式会社堀場エステック | 気化システム |
WO2016174832A1 (ja) * | 2015-04-30 | 2016-11-03 | 株式会社フジキン | 気化供給装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4696561B2 (ja) * | 2005-01-14 | 2011-06-08 | 東京エレクトロン株式会社 | 気化装置及び処理装置 |
JP5461786B2 (ja) | 2008-04-01 | 2014-04-02 | 株式会社フジキン | 気化器を備えたガス供給装置 |
JP5350824B2 (ja) | 2009-02-03 | 2013-11-27 | 株式会社フジキン | 液体材料の気化供給システム |
JP5837869B2 (ja) | 2012-12-06 | 2015-12-24 | 株式会社フジキン | 原料気化供給装置 |
KR20150119293A (ko) * | 2013-03-26 | 2015-10-23 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
KR102338026B1 (ko) * | 2017-07-25 | 2021-12-10 | 가부시키가이샤 후지킨 | 유체 제어 장치 |
JP7097085B2 (ja) * | 2017-07-25 | 2022-07-07 | 株式会社フジキン | 流体制御装置 |
-
2020
- 2020-09-03 WO PCT/JP2020/033395 patent/WO2021054135A1/ja active Application Filing
- 2020-09-03 US US17/639,288 patent/US11976356B2/en active Active
- 2020-09-03 CN CN202080059115.1A patent/CN114269966A/zh active Pending
- 2020-09-03 KR KR1020227005683A patent/KR20220035485A/ko not_active Application Discontinuation
- 2020-09-03 JP JP2021546592A patent/JPWO2021054135A1/ja active Pending
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002001949A2 (en) * | 2000-07-04 | 2002-01-10 | Universita' Degli Studi Di Milano | Transgenic mouse for screening and for studies of the pharmacodynamics and pharmacokinetics of ligands acting on the oestrogen receptor and its intracellular receptors, and method for the preparation thereof |
JP2003031562A (ja) * | 2001-07-12 | 2003-01-31 | Tokyo Electron Ltd | 熱処理装置 |
JP2006124837A (ja) * | 2004-10-28 | 2006-05-18 | Jusung Engineering Co Ltd | 薄膜製造用装置 |
JP2012142380A (ja) * | 2010-12-28 | 2012-07-26 | Tokyo Electron Ltd | 原料供給装置及び成膜装置 |
JP2016122841A (ja) * | 2014-12-22 | 2016-07-07 | 株式会社堀場エステック | 気化システム |
WO2016174832A1 (ja) * | 2015-04-30 | 2016-11-03 | 株式会社フジキン | 気化供給装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230042729A (ko) | 2020-10-31 | 2023-03-29 | 가부시키가이샤 후지킨 | 가스 공급 시스템 및 가스 공급 방법 |
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US20220403508A1 (en) | 2022-12-22 |
CN114269966A (zh) | 2022-04-01 |
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US11976356B2 (en) | 2024-05-07 |
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