JP2006124837A - 薄膜製造用装置 - Google Patents
薄膜製造用装置 Download PDFInfo
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- JP2006124837A JP2006124837A JP2005312875A JP2005312875A JP2006124837A JP 2006124837 A JP2006124837 A JP 2006124837A JP 2005312875 A JP2005312875 A JP 2005312875A JP 2005312875 A JP2005312875 A JP 2005312875A JP 2006124837 A JP2006124837 A JP 2006124837A
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- 239000010409 thin film Substances 0.000 title claims abstract description 44
- 238000000151 deposition Methods 0.000 title abstract description 4
- 239000007789 gas Substances 0.000 claims abstract description 133
- 239000002994 raw material Substances 0.000 claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 claims abstract description 42
- 239000012159 carrier gas Substances 0.000 claims abstract description 35
- 239000000126 substance Substances 0.000 claims abstract description 10
- 230000008016 vaporization Effects 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 26
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 238000010926 purge Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 41
- 238000009434 installation Methods 0.000 abstract description 4
- 230000032258 transport Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 3
- 238000009834 vaporization Methods 0.000 description 27
- 238000007740 vapor deposition Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 238000003860 storage Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000006200 vaporizer Substances 0.000 description 7
- 239000011553 magnetic fluid Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- POXIZPBFFUKMEQ-UHFFFAOYSA-N 2-cyanoethenylideneazanide Chemical group [N-]=C=[C+]C#N POXIZPBFFUKMEQ-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】真空チャンバー110の上部に回転軸121を配置する。該回転軸121の内部に蒸発器140を設けて原料物質を気化させる。該回転軸121の下端にはガス注入器113を連結して、一体的に回転させる。ガス注入器113の下方には基板Sを配置し、該基板Sの上面にはシャドーマスク112を吸着させる。回転軸121の上部に供給されるキャリアガスは、気化された原料物質を運搬して基板Sの上面に付着させる。これにより、薄膜が形成される。本発明によれば、シャドーマスク112は基板Sに載置されるので、基板Sに対して平行に保持されることとなる。ガス注入器113は回転式であるため、装置の設置面積を小さくでき、かつ、薄膜の膜厚を均一にできる。
【選択図】図5
Description
111 サセプター
112 シャドーマスク
113 ガス注入器
114 噴射口
115 ガス拡散部
116 シャッター
120 ハウジング
121 回転軸
122a 第1電力供給線
122b 第2電力供給線
123 マグネティックシール
124 ガス流路
125 パージガス流入管
127 キャリアガス流入管
128 拡張部
129 収容部
130 ヒーター
140 蒸発器
150 キャリアガス供給部
160 スリップリング
170 粉末原料供給部
171 粉末原料貯蔵タンク
172 スクリュー回転装置
173 定量供給スクリュー
174 原料供給管
175 リフィルタンク
180 第1気化プレート
190 第2気化プレート
181 第1ガス流動ホール
191 第2ガス流動ホール
S 基板
Claims (20)
- チャンバーと;
前記チャンバー内部に配置されるサセプターと;
前記サセプターの上方に配置されると共に、多数の噴射口を有するガス注入器と;
前記ガス注入器に連結されると共に、前記多数の噴射口に連結される流路を有する軸と;
原料物質を気化させて、気化された前記原料物質を前記ガス注入器に供給する蒸発器とを備えた薄膜製造用装置。 - 前記軸は、前記ガス注入器と共に回転できることを特徴とする請求項1に記載の薄膜製造用装置。
- 一端が前記蒸発器に連結され、前記軸の内部に配置された第1電力供給線、をさらに備えることを特徴とする請求項2に記載の薄膜製造用装置。
- 前記第1電力供給線の他の一端に連結されるスリップリングと、前記スリップリングに連結される第2電力供給線と、をさらに備えることを特徴とする請求項3に記載の薄膜製造用装置。
- 前記流路に連結されて、キャリアガスを供給するキャリアガス供給部をさらに備え、前記キャリアガスと気化された前記原料物質は、前記ガス注入器から噴射されることを特徴とする請求項1に記載の薄膜製造用装置。
- 前記蒸発器の上方に配置され、前記キャリアガスを予熱するヒーターをさらに備えたことを特徴とする請求項5に記載の薄膜製造用装置。
- 前記軸は、前記流路の直径より大きい直径を有する拡張部を有して、前記蒸発器は、前記拡張部内に配置されることを特徴とする請求項1に記載の薄膜製造用装置。
- 前記ガス注入器は、突出された収容部を有して、前記蒸発器は、前記収容部に配置されることを特徴とする請求項1に記載の薄膜製造用装置。
- 前記流路は、前記ガス注入器の中央部に連結されることを特徴とする請求項1に記載の薄膜製造用装置。
- 前記多数の噴射口の密度は、前記ガス注入器の中央部で最小であって、外郭の方へ行くほど徐々に増加することを特徴とする請求項9に記載の薄膜製造用装置。
- 前記原料物質は、有機物質を含むことを特徴とする請求項1に記載の薄膜製造用装置。
- 前記軸を取り囲むハウジングと、前記ハウジング及び前記軸の間に配置されたマグネティックシールと、を備えたことを特徴とする請求項1に記載の薄膜製造用装置。
- 前記ハウジングに連結されて該ハウジングにパージガスを供給するパージガス流入管、をさらに備えたことを特徴とする請求項12に記載の薄膜製造用装置。
- 前記ハウジングに連結され、前記マグネティックシールを冷却する冷却手段、をさらに備えたことを特徴とする請求項12に記載の薄膜製造用装置。
- 前記ガス注入器は、内部ヒーターを含むことを特徴とする請求項1に記載の薄膜製造用装置。
- チャンバーと;
前記チャンバー内部に配置されるサセプターと;
前記サセプターの上方に配置されると共に、多数の噴射口を有するガス注入器と;
前記ガス注入器に連結されると共に、前記多数の噴射口に連結される流路を有する軸と;
原料物質を気化させて、気化された前記原料物質を前記ガス注入器に供給する多数の蒸発器と;
前記流路に前記原料物質を供給する原料物質供給部とを備えた薄膜製造用装置。 - 前記原料物質供給部は、
粉末状の前記原料物質を貯蔵するタンクと;
前記タンクと前記流路を連結する原料供給管と;
少なくとも一部が前記タンクの内部に配置されるスクリューと;
前記スクリューを駆動させるスクリュー回転装置とを有することを特徴とする請求項16に記載の薄膜製造用装置。 - 前記多数の蒸発器は、前記ガス注入器内に形成されることを特徴とする請求項16に記載の薄膜製造用装置。
- 前記多数の蒸発器は、前記ガス注入器の内部空間を水平に区分する第1蒸発器及び第2蒸発器を有することを特徴とする請求項18に記載の薄膜製造用装置。
- 前記第1蒸発器の端部には、多数の第1ガス流動ホールが形成されて、前記第2蒸発器の中心部には、多数の第2ガス流動ホールが形成されることを特徴とする請求項19に記載の薄膜製造用装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2004-086470 | 2004-10-28 | ||
KR1020040086470A KR101121417B1 (ko) | 2004-10-28 | 2004-10-28 | 표시소자의 제조장치 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006124837A true JP2006124837A (ja) | 2006-05-18 |
JP2006124837A5 JP2006124837A5 (ja) | 2008-12-11 |
JP4942985B2 JP4942985B2 (ja) | 2012-05-30 |
Family
ID=36260374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005312875A Active JP4942985B2 (ja) | 2004-10-28 | 2005-10-27 | 薄膜製造用装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8157916B2 (ja) |
JP (1) | JP4942985B2 (ja) |
KR (1) | KR101121417B1 (ja) |
CN (1) | CN1766157B (ja) |
TW (1) | TWI453800B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021054135A1 (ja) * | 2019-09-19 | 2021-03-25 | 株式会社フジキン | 気化供給装置 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI341872B (en) * | 2006-08-07 | 2011-05-11 | Ind Tech Res Inst | Plasma deposition apparatus and depositing method thereof |
KR101301642B1 (ko) * | 2007-03-07 | 2013-08-29 | 주성엔지니어링(주) | 가열수단을 가지는 가스분사장치와 이를 포함하는기판처리장치 |
KR101394481B1 (ko) * | 2007-10-30 | 2014-05-13 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 이용한 유기 박막 증착 장치 |
KR101363395B1 (ko) * | 2007-10-31 | 2014-02-21 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 이용한 유기 박막 증착 장치와유기 박막 증착 방법 |
KR101173645B1 (ko) * | 2007-12-31 | 2012-08-20 | (주)에이디에스 | 가스 분사 유닛 및 이를 구비하는 박막 증착 장치 |
US20120090546A1 (en) * | 2009-03-26 | 2012-04-19 | Snu Precision Co., Ltd | Source supplying unit, method for supplying source, and thin film depositing apparatus |
JP5620146B2 (ja) * | 2009-05-22 | 2014-11-05 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置 |
JP5623786B2 (ja) * | 2009-05-22 | 2014-11-12 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置 |
US8882920B2 (en) * | 2009-06-05 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8882921B2 (en) * | 2009-06-08 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
KR101074792B1 (ko) * | 2009-06-12 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101117719B1 (ko) * | 2009-06-24 | 2012-03-08 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101127575B1 (ko) * | 2009-08-10 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 증착 가림막을 가지는 박막 증착 장치 |
JP5328726B2 (ja) | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
US20110052795A1 (en) * | 2009-09-01 | 2011-03-03 | Samsung Mobile Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US8696815B2 (en) | 2009-09-01 | 2014-04-15 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8876975B2 (en) * | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
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CN1766157A (zh) | 2006-05-03 |
JP4942985B2 (ja) | 2012-05-30 |
US8157916B2 (en) | 2012-04-17 |
KR20060037513A (ko) | 2006-05-03 |
TWI453800B (zh) | 2014-09-21 |
US20060090705A1 (en) | 2006-05-04 |
KR101121417B1 (ko) | 2012-03-15 |
CN1766157B (zh) | 2010-08-25 |
TW200620421A (en) | 2006-06-16 |
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