JP2011520035A - 組合わせプラズマ励起堆積技術 - Google Patents
組合わせプラズマ励起堆積技術 Download PDFInfo
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- JP2011520035A JP2011520035A JP2011507699A JP2011507699A JP2011520035A JP 2011520035 A JP2011520035 A JP 2011520035A JP 2011507699 A JP2011507699 A JP 2011507699A JP 2011507699 A JP2011507699 A JP 2011507699A JP 2011520035 A JP2011520035 A JP 2011520035A
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
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Abstract
【選択図】図3
Description
本明細書は、参照により本明細書に組み込まれる2008年5月2日出願の米国仮特許出願第61/050,159号、名称「Combinatorial Plasma Enhanced Deposition Techniques(組合わせプラズマ励起堆積技術)」、および参照により本明細書に組み込まれる2009年4月30日出願の米国実用出願第12/433,842号、名称「Combinatorial Plasma Enhanced Deposition Techniques」の権利を主張するものである。
本発明は一般に、半導体処理に関するものである。より具体的には、組合わせプラズマ励起堆積の技術について説明する。
「組合わせ処理」は一般に、基板の複数の領域を差別的に処理する技術を意味する。組合わせ処理を用いて、半導体の製造に関連する異なる材料、化学物質、処理および技術を作りだして評価し、さらには構造を作るか、上述のものを既存の構造に如何にコーティング、充填または一体化するかを決定することができる。組合わせ処理は、基板上の複数の領域にわたって、材料、単位工程および/または工程順序を変更する。
図1Aは、複数の領域を有する基板100を図示している。この基板100は、複数のウェッジ形状領域102を具えている。ウェッジ形状領域102は、CVD、ALD、PECVD、およびPEALDといった技術を用いて形成することができる。例えば、前駆体、反応物、露出時間、温度、圧力、あるいは他の処理パラメータまたは状態を変更することにより、それぞれの領域102に異なる材料を堆積することができる。その後、この領域102を試験および比較して、どちらの材料または技術が更なる研究に値する、あるいは製造に有用であるかを決定することができる。ここに示すように、基板100は4つのウェッジに分かれているが、任意の形状を有する任意の数の領域を使用できることを理解されたい。さらに、基板100は円形ウエハであるが、大型のウエハから切り取られた矩形のクーポン(coupon)を含む、任意の形状またはサイズの基板を使用してもよい。基板またはウエハは、集積回路、半導体装置、フラットパネル画面、光電子装置、データ記憶装置、磁電気装置、磁気光学装置、分子電子素子、太陽電池、光素子、パッケージ装置、およびその種のものに用いられるものであってもよい。
異なる材料(または異なる性質を有する同一材料)を1またはそれ以上の基板の異なる領域上に堆積することができる。
異なる単位工程を領域にわたって実施することができる、あるいは多様な単位工程(例えば、前駆体をある領域に10秒間、別の領域に10秒間にわたって露出する)を実施することができる。
単位工程の順序、例えば1またはそれ以上の層を堆積するために用いる一連の各単位工程を変更することができる。さらに、単位工程を工程順序に追加または省略することができる。
図1Bは、組合わせ処理および評価の実施を示す概略図140である。概略図140は、特定の材料および/または処理を選択するにつれて、1組の基板に行う組合わせ処理の相対数が減少することを示している。通常、組合わせ処理は、第1のスクリーニングの間に多くの処理および材料を選択するステップと、これらの処理から有望な候補を選択するステップと、第2のスクリーニングの間に選択した処理を実行するステップと、第2のスクリーニングから有望な候補を選択するステップと、その繰り返しを含む。さらに、後の段階から初期の段階へのフィードバックを利用して、成功基準を正確にし、さらに優れたスクリーニング結果をもたらすことができる。
図2A乃至図2Eは、本発明の一実施形態による、基板処理システム200およびその構成要素を図示している。基板処理システム200は、例えばアルミニウムまたは陽極処理アルミニウムのような処理互換性材料で形成された囲いアセンブリ202を具えている。囲いアセンブリ202は、処理チャンバ206を規定するハウジング204と、処理チャンバ206の開口部を覆う真空フタアセンブリ208とを具えている。ウエハ移動チャネル210がハウジング204内に位置しており、以下で更に十分説明するように、処理チャンバ206とその外側との間における基板の移動が容易となる。真空フタアセンブリ208に取り付けるものは、反応流体およびキャリア流体を処理チャンバ206内に供給する処理流体注入アセンブリであり、以下で更に十分説明する。そのため、流体注入アセンブリは、複数の通路212a、212b、212cおよび212dと、シャワーヘッド214とを具える。チャンバハウジング204、真空フタアセンブリ208、およびシャワーヘッド214は、従来の方法によって望ましい温度の範囲内に維持することができる。シャワーヘッド214の様々な実施形態は、以下に記載する(例えば、図2C乃至図2Eおよび図4A参照)。
A.組合わせPECVD/PEALDの分割シャワーヘッド
図3は、プラズマ励起CVD(PECVD)またプラズマ励起ALD(PEALD)を用いる様々な状況下において、異なる材料を堆積することができる処理システム300を示す簡易図である。図4Aは、シャワーヘッド214の下面図である。図4Bは、異なる材料302が堆積した複数の領域402を具える基板246を図示している。
VB = f(pd)
であって、fはチャンバにあるガスに固有の性質である。従って、電極間の距離が一定かつチャンバ206内の圧力が一定であるとして、電位差が適用されるときのプラズマの点火はプラズマガスの固有の性質による。本発明の実施形態によると、シャワーヘッド214の区分268の1つは容易に点火するガス(例えば、Ar)を供給して、別の区分268は点火しにくいガス(例えば、H2)を供給してもよい。使用できる他のプラズマガスは、酸素、窒素、アンモニア等を含む。この方法では、プラズマを基板246の領域402の1つに供給して、別の領域402には供給しないでもよい。結果として、プラズマを変更することによって組み合わせる方法で、異なる材料を基板246の複数の領域402に形成することができる。例えば、基板246のある領域402aに反応物としてプラズマを用いながら、基板246の第2の領域402bに別の反応物を用いてもよい。これを行う実施例を、図8乃至図11のタイミング図について以下に記載する。プラズマを基板246の幾つかの領域に供給し、他の領域には供給しない他の技術を以下に記載する。
図5は、組合わせ材料堆積を実施する、代替的なシャワーヘッド214を具える組合わせ処理システム500を図示している。上述のように、プラズマの点火(すなわち、降伏電圧)は、電極(例えば、シャワーヘッド214と台座218)間の距離に依存する。図示された代替的なシャワーヘッド214は、台座218から異なる距離(例えば、距離d1502aおよびd2502b)にある区分268aおよび268bを具えている。単一のプラズマガスをチャンバ内に供給することができ、距離502aがプラズマを点火するには広すぎ、一方で距離502bがプラズマを点火するのに十分である、またはその反対(例えば、距離502aがプラズマを点火し、距離502bがプラズマを点火するには狭すぎる)となるように、プラズマガスおよび台座の位置を選択できる。この方法では、プラズマを幾つかの領域で点火し、他の領域では点火しないようにできる。
プラズマを基板246の領域402の1つに点火し、次いで別の領域402に移動させて組合わせ処理を実現することができる。ある領域から別の領域にプラズマを移動させる2つの技術について記載する。
第1の技術は、図2C乃至図2Eおよび図3に示すシャワーヘッド214を用いる。シャワーヘッド214と台座218との間にプラズマガス(例えば、Ar)および電位差をもたらし、基板246の他の領域402内には点火しないガスを用いることによって、シャワーヘッド214は、第1の領域、例えば領域402a内にプラズマを作りだす。後に、電位差は維持されるが、第1の領域内のプラズマガスが、この状況下で点火しないものに変更され(例えば、パージガス)、この状況で点火するプラズマガス(例えば、Ar)が次いで第2の領域(例えば、領域402b)内に供給される。第1の領域から点火しやすいプラズマガスを除去し、第2の領域内に点火しやすいガスを導入すると、第1の領域から第2の領域にプラズマが移動する。実施形態によると、両方の領域にプラズマが存在する重複期間がある場合がある。さらなる実施形態によると、任意の数の領域が何時でもプラズマを有していてもよく、その領域は隣接しているか、隣接していなくてもよい。
一実施形態によると、台座218は回転可能であってもよい。ある領域に対応するシャワーヘッド214の区分(例えば、区分268a)を介して適切なプラズマガスを供給することにより、プラズマを領域(例えば、領域402a)内に当てることができる。基板246が回転して、プラズマは別の領域(例えば、領域402b)に移動できる。
図6は、基板の領域の1つにプラズマを点火して、他の領域には点火しない電気等価回路600を示している。この等価回路600は、区分268および基板の領域402を通る電流の流れを示している。例えば、開放スイッチ602、604、および608は、領域402a、402b、および402dのそれぞれにプラズマがないことを示している。閉鎖スイッチ606は、領域402c内に電流の流れおよびプラズマが存在することを示している。領域内にプラズマを点火すると、その領域内の2つの電極(すなわち、シャワーヘッド214と台座218)間の回路が事実上完成する。この実施例では、閉鎖スイッチ606によって示す領域402cは、他の領域内のプラズマガスよりも簡単に点火するプラズマガスを有している。図5について記載するような他の実施例では、領域402c内のシャワーヘッド214と台座218との間の距離は、他の領域内のシャワーヘッド214と台座218との間の距離と異なる。
図7は、基板の複数の領域にわたってプラズマを変更して、基板を組み合わせて処理する処理700を示すフローチャートである。図7に記載の処理700は、PECVDまたはPEALDを用いる組合わせ方法において、材料を形成または堆積パラメータ(例えば、前駆体、温度、プラズマの有無)を分析する実施形態である。
A.プラズマ励起ALD
図8乃至図11は、組合わせプラズマ励起ALD処理を実施するタイミング図である。このタイミング図は、組合わせPEALDを用いて基板上に複数の材料を形成するいくつかの状況を示している。図8は、2つの異なる前駆体を連続して加えて、基板にわたってプラズマを加える場合を示している。図9は、2つの異なる前駆体を同時に加えて、基板にわたってプラズマを加える場合を示している。図10は、基板にわたって単一の前駆体を使用して、基板の領域間でプラズマを変更する場合を示している。図11は、2つの異なる前駆体を供給し、基板の領域にわたってプラズマを変更する場合を示している。他の変更も可能であり、これらの実施例は単に可能な種類の実験の代表例に過ぎず、本発明の可能な適用を制限することを意味するものではない。図8乃至図11に示すサイクルを繰り返して、複数の層を堆積してもよい。
図8に示すように、シャワーヘッドの4つの区分への流れを流れ図800を用いて説明する。シャワーヘッド214の4つの区分268a、268b、268c、および268dを通る流れを、流れ図800に示す。上述のように、各区分268は基板246の領域402に対応しており、この上に材料302を堆積することができる。シャワーヘッド214を通る流量の合計はほぼ一定である。例えば、ここに示すように、任意の適切な流量を用いてもよいが、シャワーヘッドを通る流量の合計は常にほぼ1000sccm(各区分毎に250sccm)である。さらに、各区分268毎の流量は等しいが、区分268が異なるサイズまたは異なる構成を有する実施形態では、各区分268毎に異なる流量が用いられてもよい。
図10は、組合わせPEALDを実施する場合に、領域にわたってプラズマを変更するタイミング図1000である。区分268a乃至dは、組合わせて処理される基板246上の領域402a乃至dに対応する。この実施例は、単一の前駆体と、複数のプラズマガスと、露出時間とを利用して、堆積する材料のパラメータの効果を評価する。
4つのタイミング図800、900、1000、および1100は、組み合わせて変更されるPEALDの実施例である。本発明の実施形態に応じて、他の様々な処理を発展して利用することができる。例えば、幾つかの実施形態では、プラズマをALDサイクルに用いて、基板の1またはそれ以上の領域内に材料が堆積してもよく、別の反応物(例えば、水蒸気)を用いて、他の領域内に材料が堆積したALDを形成してもよい。この方法では、従来のALDとPEALDとの間の差異は、単一の実験で調査することができる。さらに他の実施形態によると、2つ以上の異なる前駆体を用いてもよく、他の変量を調査することができる。
PECVDは、反応速度を高め、処理温度を低下させる増強機能としてプラズマを用いる。プラズマをCVDに用いて、例えば、密度、組成、ステップ範囲、接着力、誘電率、フィルム漏れ、降伏電圧等のフィルム特性を変更することも可能である。様々な異なる状況を利用して、PECVDを用いる組合わせ処理を実施することができる。組合わせPEALDのように、領域にわたって前駆体を変更して、プラズマを基板の総ての領域に適用してもよい。別の実施例によると、プラズマを1またはそれ以上の領域に供給し、他の領域には供給しないでもよい。この第2の実施例では、同一の前駆体を総ての領域に供給してもよく、あるいは前駆体またはPECVDの他のパラメータを変更してもよい。
Claims (29)
- 基板の複数の領域を指定するステップと;
第1の前駆体を前記複数の領域の少なくとも第1の領域に供給するステップと;
前記第1の前駆体を用いて形成された前記第1の領域上の第1の材料が堆積するように、第1のプラズマを前記第1の領域に供給するステップと、を具える方法であって、前記第1の材料は前記基板の第2の領域上に形成される第2の材料と異なることを特徴とする方法。 - 請求項1に記載の方法がさらに:
前記第1のプラズマを前記第2の領域内に供給することなく、前記第1のプラズマを前記第1の領域内に供給するステップを具えることを特徴とする方法。 - 請求項1に記載の方法において、前記第1のプラズマを供給するステップが:
第1のガスを前記第1の領域に供給するステップと;
前記第1の領域内の前記第1のプラズマを点火するように、前記第1のガスを供給するシャワーヘッドと前記基板を保持する台座との間に、前記第1のガスの降伏電圧と等しいかそれよりも大きい電位差を発生させるステップと、を具えることを特徴とする方法。 - 請求項1に記載の方法において、前記第1のプラズマを供給するステップが、遠隔のプラズマ源から前記第1のプラズマを供給するステップを具えることを特徴とする方法。
- 請求項1に記載の方法において、前記第1の前駆体を供給するステップと、前記第1のプラズマを供給するステップが、連続的に実施されることを特徴とする方法。
- 請求項1に記載の方法において、前記第1の前駆体を供給するステップと、前記第1のプラズマを供給するステップが、ほぼ同時に実施されることを特徴とする方法。
- 請求項1に記載の方法がさらに、第2のガスを前記第2の領域に供給するステップを具えることを特徴とする方法。
- 請求項7に記載の方法がさらに:
前記第1のガスおよび前記第2のガスがシャワーヘッドの第1の区分および第2の区分から放出され;
前記基板が前記シャワーヘッドと反対側の台座上に配置され;
前記第1のプラズマを前記第1の領域内に供給し、前記第1のプラズマを前記第2の領域内には供給しないように、前記台座と前記シャワーヘッドとの間に電位差を発生させるステップを具えることを特徴とする方法。 - 請求項8に記載の方法において、前記台座と前記シャワーヘッドとの間の距離および前記第1のガスは、前記第1のプラズマを前記第1の領域内に供給するには十分であって、前記距離および前記第2のガスは、前記第1のプラズマを前記第2の領域内に供給するには十分でないことを特徴とする方法。
- 請求項1に記載の方法がさらに、前記第1の領域から前記第2の領域に前記第1のプラズマを移動させるステップを具えることを特徴とする方法。
- 請求項10に記載の方法において、前記第1のプラズマを移動させるステップが、前記第1の領域内の前記第1のプラズマを消して前記第2の領域内の前記第1のプラズマを点火するように、前記第1の領域内の第1のガスの混合を変更するステップと、前記第2の領域内の第2のガスの混合を変更するステップとを具えることを特徴とする方法。
- 請求項1に記載の方法がさらに、前記第1の前駆体と異なる第2の前駆体を前記第2の領域に供給するステップを具えることを特徴とする方法。
- 請求項1に記載の方法がさらに、前記第1の前駆体を前記第2の領域に供給するステップを具えることを特徴とする方法。
- 請求項1に記載の方法において、前記複数の領域のそれぞれが、ほぼ同じサイズおよびほぼ同じ形状を有することを特徴とする方法。
- 請求項1に記載の方法において、前記複数の領域の各領域内への合計流量が、ほぼ等しいことを特徴とする方法。
- 請求項15に記載の方法において、前記合計流量が、前記基板にわたって軸対称であることを特徴とする方法。
- 請求項1に記載の方法において、前記材料が、化学気相成長法(CVD)および原子層堆積法(ALD)の一方を用いて堆積されることを特徴とする方法。
- 請求項3に記載の方法がさらに:
前記第1のガスを前記第2の領域に供給するステップと;
前記台座と前記シャワーヘッドとの間に前記電位差を発生させるステップと;を具えており、
前記第1の領域に対応する前記シャワーヘッドの第1の区分と前記基板との間の第1の距離は、前記降伏電圧が生じて前記第1の領域内に前記第1のプラズマを点火するには十分であって;
前記第2の領域に対応する前記シャワーヘッドの第2の区分と前記基板との間の第2の距離は、前記降伏電圧が生じて前記第2の領域内に前記第1のプラズマを点火するには十分ではないことを特徴とする方法。 - 請求項1に記載の方法がさらに、前記第1のプラズマと異なる第2のプラズマを前記第2の領域内に供給するステップを具えることを特徴とする方法。
- 請求項17に記載の方法において、前記第2のプラズマを供給するステップが、前記第1のプラズマを供給するステップと連続して起こることを特徴とする方法。
- 請求項1に記載の方法がさらに、前記第1のプラズマを前記複数の領域のそれぞれに供給するステップを具えることを特徴とする方法。
- 請求項21に記載の方法がさらに、前記第1の前駆体を供給するステップの前に、第2のプラズマを用いて前記複数の領域の少なくとも1つを前処理するステップを含むことを特徴とする方法。
- 請求項22に記載の方法がさらに、前記第1の前駆体を供給するステップの前に、プラズマを前記複数の領域の少なくとも1つの他の領域に供給しないことにより、前記複数の領域の少なくとも1つの他の領域の前処理を行わないステップを含むことを特徴とする方法。
- 請求項22に記載の方法がさらに、前記第2のプラズマを用いて、前記複数の領域の総てを前処理するステップを具えることを特徴とする方法。
- 基板上に複数の領域を指定するステップと;
シャワーヘッドの第1の区分を利用して、第1の前駆体および第1のガスを前記基板の第1の領域に供給するステップと;
前記シャワーヘッドの第2の区分を利用して、第2の前駆体および第2のガスを前記基板の第2の領域に供給するステップと;
前記シャワーヘッドと、前記第1の領域上に材料を形成するよう前記基板が上に配置された台座との間に電位差を発生させることにより、前記基板の前記第1の領域上のプラズマを点火するステップと;を具える方法であって、
前記第1の区分と前記台座との間の第1の距離は、前記電位差が発生した場合に前記第1のガスが点火してプラズマを形成するような距離であって、前記第2の区分と前記第2の領域との間の第2の距離は、前記電位差が発生した場合に前記第2のガスが点火しないような距離であることを特徴とする方法。 - 請求項25に記載の方法において、前記第1の距離および前記第2の距離が、ほぼ等しいことを特徴とする方法。
- 請求項25に記載の方法において、前記第1の前駆体および前記第2の前駆体が、同一であることを特徴とする方法。
- 請求項25に記載の方法がさらに:
前記第1の距離をわたって前記プラズマを点火するように、前記第1のガスを供給するステップと;
前記第2の距離をわたって前記プラズマを点火するように、前記第2のガスを供給するステップと、を具えることを特徴とする方法。 - 請求項25に記載の方法がさらに:
前記第1の前駆体および前記プラズマを用いて、前記第1の領域上に第1の材料を堆積させるステップと;
前記第2の前駆体を用いて、前記第2の領域上に前記第1の材料と異なる第2の材料を堆積させるステップと、を具えることを特徴とする方法。
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US20130042811A1 (en) | 2013-02-21 |
KR101563030B1 (ko) | 2015-10-23 |
US20120100724A1 (en) | 2012-04-26 |
WO2009135182A3 (en) | 2010-02-18 |
US8389419B2 (en) | 2013-03-05 |
JP5734840B2 (ja) | 2015-06-17 |
CN102017083B (zh) | 2013-04-03 |
US8980765B2 (en) | 2015-03-17 |
EP2279518A2 (en) | 2011-02-02 |
US20150144061A1 (en) | 2015-05-28 |
CN102017083A (zh) | 2011-04-13 |
US8148273B1 (en) | 2012-04-03 |
US20120077338A1 (en) | 2012-03-29 |
US20120100723A1 (en) | 2012-04-26 |
US20120094503A1 (en) | 2012-04-19 |
US20090275210A1 (en) | 2009-11-05 |
US8318611B2 (en) | 2012-11-27 |
US8129288B2 (en) | 2012-03-06 |
US8153535B1 (en) | 2012-04-10 |
KR20110002879A (ko) | 2011-01-10 |
US8372758B2 (en) | 2013-02-12 |
EP2279518A4 (en) | 2013-08-21 |
US20120094034A1 (en) | 2012-04-19 |
WO2009135182A2 (en) | 2009-11-05 |
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