JP2020505515A - 基板バイアスald用電気絶縁改善チャックシステムおよび方法 - Google Patents
基板バイアスald用電気絶縁改善チャックシステムおよび方法 Download PDFInfo
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- B33Y10/00—Processes of additive manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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Abstract
Description
本出願は、2017年1月27日に出願された「CHUCK SYSTEMS AND METHODS WITH ENHANCED ELECTRICAL ISOLATION FOR SUBSTRATE−BIASED ALD」という名称の米国仮特許出願第62/451,377号の優先権の利益を主張する。この米国仮出願の全開示は、参照により本明細書中に組み込まれる。
本開示は、原子層堆積(ALD)に関し、特に、基板バイアスALD用電気絶縁改善チャックシステムおよび方法に関する。
本出願は、2017年1月27日に出願された「CHUCK SYSTEMS AND METHODS WITH ENHANCED ELECTRICAL ISOLATION FOR SUBSTRATE−BIASED ALD」という名称の米国仮特許出願第62/451,377号の優先権の利益を主張する。この米国仮出願の全開示は、参照により本明細書中に組み込まれる。
本開示は、原子層堆積(ALD)に関し、特に、基板バイアスALD用電気絶縁改善チャックシステムおよび方法に関する。
Claims (32)
- 基板上に導電膜を形成する基板バイアス原子層堆積(ALD)プロセスを実行するためのチャックシステムであって、
前記基板を支持するように構成された導電基板ホルダと、
導電ベースと、
前記導電基板ホルダと前記導電ベースとの間に挟まれ、外縁を有する電気絶縁層と
を備え、
前記電気絶縁層は、前記外縁に形成されて前記外縁の全周にわたる少なくとも1つの縁側切欠部を有し、
前記少なくとも1つの縁側切欠部は、内部を有し、前記基板バイアスALDプロセス中に前記導電膜が前記少なくとも1つの切欠部の内部全体をコーティングすることを防止するようにサイズ決めされる、
チャックシステム。 - 前記少なくとも1つの縁側切欠部は、0.01インチ(0.25mm)<=h<=0.05インチ(1.27mm)の範囲で規定される高さ寸法hを有する、
請求項1に記載のチャックシステム。 - 前記少なくとも1つの縁側切欠部は、0.20インチ(5.1mm)<=d<=4インチ(101.6mm)の範囲で規定される深さ寸法dを有する、
請求項1に記載のチャックシステム。 - 前記少なくとも1つの縁側切欠部は、アスペクト比AR>=20を有する、
請求項1に記載のチャックシステム。 - 前記少なくとも1つの縁側切欠部は、50<=AR<=100の範囲で規定されるアスペクト比を有する、
請求項1に記載のチャックシステム。 - 前記少なくとも1つの縁側切欠部は、矩形断面形状を有する、
請求項1に記載のチャックシステム。 - 前記電気絶縁層は、0.1インチ(2.5mm)<=TH<=0.5インチ(12.7mm)の範囲で規定される厚さTHを有する、
請求項1に記載のチャックシステム。 - 前記電気絶縁層は、モノリシックであり、単一の電気絶縁材料から作られる、
請求項1に記載のチャックシステム。 - 前記少なくとも1つの縁側切欠部は、少なくとも1つの分岐を含む、
請求項1に記載のチャックシステム。 - 前記電気絶縁層は、異なる材料で作られた第1片および第2片から形成され、
前記異なる材料の少なくとも1つは、電気絶縁材料である、
請求項1に記載のチャックシステム。 - 前記電気絶縁層は、少なくとも第1片、第2片および第3片から形成され、
前記片の少なくとも1つは、電気絶縁材料から作られる、
請求項1に記載のチャックシステム。 - 前記電気絶縁層は、ガラス、セラミック、プラスチック、熱可塑性樹脂、ポリアミド(ナイロン)、ポリイミド(カプトン)、エポキシ、ポリマーおよびポリカーボネートを含む材料群から選択される少なくとも1つの材料から作られる、
請求項1に記載のチャックシステム。 - 前記少なくとも1つの縁側切欠部は、複数の縁側切欠部を含む、
請求項1に記載のチャックシステム。 - 不活性ガス源と、
前記不活性ガス源を前記少なくとも1つの縁側切欠部の前記内部に接続するガスラインとをさらに備える、
請求項1に記載のチャックシステム。 - 請求項1に記載のチャックシステムと、
内部を有する反応チャンバと
を備え、
前記チャックシステムが、前記反応チャンバ内部に配置される、
原子層堆積(ALD)システム。 - 導電膜を堆積させるための基板バイアスALDプロセスを実行するために使用されるチャックシステムのための電気絶縁層であって、
単一の電気絶縁材料から作られるモノリシックディスクと、
縁側切欠部と
を備え、
前記ディスクは、外縁と、0.1インチ(2.5mm)<=TH<=0.5インチ(12.7mm)の範囲で規定される厚さTHとを有し、
前記縁側切欠部は、前記外縁に形成されて前記外縁の全周にわたり、0.01インチ(0.25mm)<=h<=0.05インチ(1.27mm)の範囲の高さ寸法hおよび0.20インチ(5.1mm)<=d<=4インチ(101.6mm)の範囲の深さ寸法dを有し、
d/hが、20<=AR<=100の範囲であることを条件とする、
電気絶縁層。 - 前記縁側切欠部は、複数の分岐を含む、
請求項16に記載の電気絶縁層。 - 前記縁側切欠部は、矩形断面形状を有する、
請求項16に記載の電気絶縁層。 - 前記単一の絶縁材料は、ガラス、セラミック、プラスチック、熱可塑性樹脂、ポリアミド(ナイロン)、ポリイミド(カプトン)、エポキシ、ポリマーおよびポリカーボネートを含む電気絶縁材料群から選択される電気絶縁材料のうちの1つである、
請求項16に記載の電気絶縁層。 - 導電膜を堆積させるための基板バイアス原子層堆積(ALD)プロセスを実行するために使用されるチャックシステムのための電気絶縁層であって、
電気絶縁材料または導電材料のいずれかで作られた上部片と、
電気絶縁材料または導電材料のいずれかで作られた下部片と、
電気絶縁材料で作られると共に前記上部片と前記下部片との間に挟まれて外縁を有する層状構造を規定する中間片と
を備え、
前記中間片は、前記外縁において前記外縁の全周にわたる縁側切欠部を画定するようにサイズ決めされ、
前記縁側切欠部は、0.01インチ(0.25mm)<=h<=0.05インチ(1.27mm)の範囲の高さ寸法hおよび0.20インチ(5.1mm)<=d<=4インチ(101.6mm)の範囲の深さ寸法dを有し、
d/hが、20<=AR<=100の範囲であることを条件とする、
電気絶縁層。 - 前記上部片および前記下部片は、導電材料から作られる、
請求項20に記載の電気絶縁層。 - 前記上部片、前記中間片および前記下部片は、電気絶縁材料からそれぞれ作られる、
請求項21に記載の電気絶縁層。 - 前記上部片、前記中間片および前記下部片は、同じ電気絶縁材料から作られる、
請求項22に記載の電気絶縁層。 - 導電膜を堆積させるための基板バイアス原子層堆積(ALD)プロセスを実行するために使用されるチャックシステムのための電気絶縁層であって、
電気絶縁材料または導電材料のいずれかで作られ外周を有する中央片と、
内縁および外縁を有する電気絶縁材料で作られた環状外側片と
を備え、
前記内縁は、前記中央片の前記外周が前記環状外側片の前記内縁に近接して位置するよう前記中央片を密接に収容するようにサイズ決めされた中央穴を画定し、
縁側切欠部は、0.01インチ(0.25mm)<=h<=0.05インチ(1.27mm)の範囲の高さ寸法hおよび0.20インチ(5.1mm)<=d<=4インチ(101.6mm)の範囲の深さ寸法dを有し、
d/hが、20<=AR<=100の範囲であることを条件とする、
電気絶縁層。 - 前記中央片は、ステンレス鋼またはアルミニウムで作られる、
請求項24に記載の電気絶縁層。 - 基板の上面に導電膜を形成するための原子層堆積(ALD)プロセスであって、
ALDシステムの反応チャンバ内でチャックシステム上に前記基板を支持することと、
導電基板ホルダにバイアス電圧を加えることと、
第1前駆体ガスおよび第2前駆体ガスを交互に導入する合間に、パージステップで前記第1前駆体ガスおよび前記第2前駆体ガスを交互に導入して前記基板の上面に前記導電膜を形成することと
を備え、
前記チャックシステムは、前記基板を支持する導電基板ホルダと、導電ベースと、外縁を有して前記導電基板ホルダと前記導電ベースとの間に挟まれた電気絶縁体とを有し、
電気絶縁層は、前記外縁に形成される少なくとも1つの切欠部を有し、
前記少なくとも1つの切欠部は、前記導電膜が内部全体をコーティングするのを防止するようにサイズ決めされた内部を有し、
前記導電基板ホルダにバイアス電圧を加えることで、前記基板にバイアス電圧が与えられ、
前記導電膜はまた、前記電気絶縁層の外縁上および前記内部の一部分にのみに堆積して、切欠部内部の中と、前記導電基板ホルダおよび前記導電ベース間とにおいて前記導電膜内にギャップを画定する、
ALDプロセス。 - 前記少なくとも1つの切欠部は、複数の切欠部を含む、
請求項26に記載のALDプロセス。 - 前記少なくとも1つの切欠部は、0.01インチ(0.25mm)<=h<=0.05インチ(1.27mm)の範囲の高さ寸法hおよび0.20インチ(5.1mm)<=d<=4インチ(101.6mm)の範囲の深さ寸法dを有し、
d/hが、20<=AR<=100の範囲であることを条件とする、
請求項26に記載のALDプロセス。 - 前記不活性ガラスが前記電気絶縁層の前記外縁の前記少なくとも1つの切欠部の内部から流出するように、前記少なくとも1つの切欠部の内部に不活性ガスを供給することをさらに備える、
請求項26に記載のALDプロセス。 - 単一の電気絶縁材料から単一のモノリシック片として前記電気絶縁層を形成することをさらに備える、
請求項26に記載のALDプロセス。 - 少なくとも2つの片から前記電気絶縁層を形成することをさらに備える、
請求項26に記載のALDプロセス。 - 3次元(3D)印刷プロセスを使用して電気絶縁層を形成することをさらに備える、
請求項26に記載のALDプロセス。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0669644B1 (en) * | 1994-02-28 | 1997-08-20 | Applied Materials, Inc. | Electrostatic chuck |
US5969934A (en) * | 1998-04-10 | 1999-10-19 | Varian Semiconductor Equipment Associats, Inc. | Electrostatic wafer clamp having low particulate contamination of wafers |
US7871676B2 (en) | 2000-12-06 | 2011-01-18 | Novellus Systems, Inc. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US20020197402A1 (en) * | 2000-12-06 | 2002-12-26 | Chiang Tony P. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US7150789B2 (en) | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
DE602005016933D1 (de) | 2004-06-28 | 2009-11-12 | Cambridge Nanotech Inc | Atomlagenabscheidungssystem und -verfahren |
US7422636B2 (en) * | 2005-03-25 | 2008-09-09 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system having reduced contamination |
US8163087B2 (en) | 2005-03-31 | 2012-04-24 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
JP2006332204A (ja) * | 2005-05-24 | 2006-12-07 | Toto Ltd | 静電チャック |
JP5060324B2 (ja) | 2008-01-31 | 2012-10-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び処理容器 |
JP4879929B2 (ja) | 2008-03-26 | 2012-02-22 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
JP5518071B2 (ja) * | 2008-08-19 | 2014-06-11 | ラム リサーチ コーポレーション | 静電チャック用エッジリング |
US8425987B2 (en) | 2008-12-31 | 2013-04-23 | Intel Corporation | Surface charge enhanced atomic layer deposition of pure metallic films |
JP5207996B2 (ja) * | 2009-01-20 | 2013-06-12 | 東京エレクトロン株式会社 | 基板載置台及び基板処理装置 |
KR101986547B1 (ko) * | 2012-12-17 | 2019-06-07 | 삼성전자주식회사 | 정전척 및 이를 포함하는 기판 처리 장치 |
JP6026306B2 (ja) * | 2013-02-05 | 2016-11-16 | 株式会社東栄科学産業 | 磁気メモリ用プローバチャック及びそれを備えた磁気メモリ用プローバ |
TWI588286B (zh) | 2013-11-26 | 2017-06-21 | 烏翠泰克股份有限公司 | 經改良的電漿強化原子層沉積方法、周期及裝置 |
SG10201806706VA (en) | 2014-02-07 | 2018-09-27 | Entegris Inc | Electrostatic chuck and method of making same |
CN104878363B (zh) * | 2014-02-28 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 机械卡盘及等离子体加工设备 |
US20160379806A1 (en) * | 2015-06-25 | 2016-12-29 | Lam Research Corporation | Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers |
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