TW200834688A - Prevention of film deposition on PECVD process chamber wall - Google Patents

Abstract

A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

Description

200834688 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention generally relate to a plasma processing apparatus, and more particularly to a plasma having a wide RF strap and/or a substrate extension rod Processing chambers should be [Prior Art] PECVD is typically used in substrates or semiconductor crystal films. Typically, one or more precursor gases are introduced into the PECVD. The precursor gas is typically directed through sub-aluminum located near the top of the chamber. The gas is reacted with the plasma in a vacuum chamber to deposit a thin layer of material on the substrate support J:. The cavitation produced during the reaction is inconsistent with the chamber flow of the slit valve and the vacuum chamber and the plasma density makes the chamber wall and the slit N membrane system relatively porous. This porous membrane accumulates a source of contaminants in the chamber chamber which will flaking and particulate during prolonged deposition. Accordingly, there is a need for an improved plasma processing chamber and its contents. SUMMARY OF THE INVENTION Embodiments of the present invention generally relate to plasma processing equipment, and more particularly to plasma processing chambers having wide RF extension rods and their applications. method. Substrate method and grounding strip (ground method. A thin vacuum chamber is deposited on the circle to complete the matching plate (usually due to electrocoagulation. The surface of the substrate of the precursor - t by-product usually sinks: on the wall. The deposition on the germanium channel may become a method of application in a sheet. - Substrate method and ground sheet and/or substrate 5 200834688 Embodiments of the present invention generally provide a substrate comprising a chamber body to. The chamber body includes a chamber bottom and the substrate support having a slit body including a support body is disposed in the chamber body. The first end of the wide RF grounding strip is coupled to the support body. At least the second end of the grounding strip is coupled to the bottom of the chamber. At least one of the extending rods is disposed to support the periphery of the body. In another embodiment, the substrate processing chamber chamber body including a chamber body includes a cavity. a bottom portion and a side wall. A substrate support member disposed in the chamber and including a support body is provided. The first end of the at least one wide RF sheet is lightly connected to the support body and the end of the at least one RF ground plate is coupled to The bottom of the chamber. In another embodiment, a chamber body having a sidewall is provided. The substrate support is located in the chamber body. At least one extension is disposed around the periphery of the support body. In one embodiment, the sidewall has a seam The valve and the at least one extension rod are disposed adjacent to the side wall. In yet another embodiment, a method of treating a substrate is provided. The method provides a processing chamber having a slit valve and a substrate support. A distribution plate above the material support member. The flowing gas passes through the distribution plasma to treat the substrate placed on the substrate support member. The invention is based on the plasma processing. The method and equipment of the material, it is true that the system has a wide RF grounding lug and/or substrate extending rod processing chamber and its application method. The processing niche is at least - RF along. The main grounding of the main grounding rod has The narrower inclusion rate is given to the board. The more obvious power 200834688 The term "substrate" as used herein generally refers to any substrate or surface of a material formed on a substrate on which a film treatment can be performed.

The invention is generally applied to rectangular substrates. Other suitable substrates may be circular, such as wafers. The invention can be used on any substrate size. However, the present invention provides particular advantages in size 15K (about 15,600 cm2), 25K (about 27,75 0 cm2) and above, preferably 40K (about 41,1 40 cm2) and above (for example, 50K, 5) 5K and 60K), because this requires a greater grounding for the larger base. Liquid crystal displays or flat panel displays are commonly used in active matrix displays such as computers and television screens. In general, a flat panel display includes two panels having a layer of liquid crystal material sandwiched therein. At least one of the plates includes at least one conductive film (coupled to a power source) disposed thereon. The power supplied to the conductive film by the power source can change the direction of the liquid crystal material to produce a patterned display. To make these displays, substrates such as glass or polymer workpieces are often subjected to a number of continuous processes to create components, conductors and insulators on the substrate. Each of these processes is typically performed in a processing chamber suitable for performing one or more processing steps. In order to efficiently complete the entire sequence of processing steps, a plurality of processing chambers are typically coupled to the central transfer chamber, which houses an automated control device to facilitate substrate transfer between the processing chambers. A processing platform having this configuration is commonly referred to as a cluster tool, an example of which is an AKT plasma-assisted chemical vapor deposition (PECVD) processing platform family available from AKT America, Inc. (Santa Clara, California). . 7 200834688 While the invention has been exemplarily described, shown and embodied in a large area substrate processing system, the invention is applicable to other plasma processing systems, including those from other manufacturers, where one or more are expected to be ensured. The ground path retention function is to the extent that it facilitates acceptable processing in the system. Other exemplary processing systems in which the present invention may be implemented include the CENTURA ULTIMA HDP-CVDTM system, the PRODUCER APF PECVDTM system, Τ Μ

PRODUCER BLACK DIAMOND system, PRODUCER BLOK

Τ Μ T M

PECVD system, PRODUCER DARC PECVD system,

Τ Μ Τ M PRODUCER HARP system, PRODUCER PECVD system,

Τ M PRODUCER STRESS NITRIDE PECVD system and Τ Μ PRODUCER TEOS FSG PECVD system, all of which are available from Applied Materials, Inc. (Santa Clara, CA). Plasma-assisted chemical vapor deposition (PECVD) techniques generally promote the excitation and/or dissociation of reactive gases by applying an electric field to the reaction zone adjacent the surface of the substrate, while generating a plasma of the reactive species immediately above the surface of the substrate. . The activity of the species in the plasma reduces the amount of energy required to carry out the chemical reaction and actually reduces the temperature required for the above PECVD process. Figure 1A is a side view of System 100, which is suitable for chemical vapor deposition (CVD) or plasma assisted chemical vapor deposition (PECVD) processing for use in large areas of glass, polymers or other suitable substrates. The circuit on which the flat panel display is made. System 1 is suitable for forming structures and components on large-area substrates for the manufacture of liquid crystal displays (LCD's), flat panel displays, organic light-emitting diodes (OLEDs) or photovoltaic cells for solar cell arrays. 200834688 (photovoltaic Cell). The structure may be a plurality of reverse pass stack (bottom idle) thin film transistors, which may include a plurality of masking steps. Other structures may include a p-n junction to form a diode for the cell. System 100 is adapted to deposit a plurality of materials on a large area substrate, not limited to dielectric materials (eg, SiO 2 , siox Ny, combinations of the foregoing, and semiconductor materials) (eg, Si and its doped materials (eg, siNX, SioxNy or the above derivatives). 4 Specific examples of dielectric materials and semiconductors formed or deposited on large-area substrates include epitaxial germanium, polycrystalline germanium, amorphous germanium, silicon germanium, germanium, and germanium. Cerium oxide, nitrogen oxynitride, dopants of the above (e.g., 'B, P or As), derivatives compositions described above. System 1000 is also adapted to receive a cleaning gas (such as argon or a combination thereof) Gas) or carrier gas (for example, A r, Η 2, the above derivatives or combinations thereof). An example of depositing a ruthenium film on a material using System 1 can be benefited from hydrogen carrier gas. The precursor gas is completed. An example of a method for depositing a thin film on a large-area substrate using the system 100 can be found in the US No. 1 1/021,416 filed on Nov. 17, 2005, the name of the publication US 2005-0255257; Controlling The Film Properties Of PECVD-Thin Films" and the US Patent No. 11/173,210, published on July 1, 2005, the name of the USS 2006-0228496, the channel etching is continuously deposited on photovoltaic power, including (but derivatives or sundries),糸, 矽锗 矽锗, or the above, hydrogen, nitrogen, He, large area base with decane as the same equipment and patent application I "Method Deposited application number % uPlasma 200834688

Uniformity Control By Gas Diffuser Curvature", the scope of the inconsistency between the two applications and this specification is incorporated herein by reference. Other examples of different components that can be formed using System 100 can be found on July 12, 2004. U.S. Patent Application Serial No. 10/8,8,8,683, issued to US-A-2005-0251990, entitled "Plasma Uniformity Control by Gas Diffuser Hole Design", and U.S. Patent No. 7,125,758, filed on Oct. 24, 2006, entitled "Controlling the Properties and Uniformity of a Silicon Nitride Film by Controlling the Film Forming Precursors, the scope of the inconsistency between the two applications and the present specification is incorporated herein by reference. FIG. 1A depicts a plasma-assisted chemical vapor deposition system. An embodiment having one of the extension rods 1 7〇 and the wide RF ground lug 1 84 of the present invention. Both the extension rods 1 70 and the wide RF ground lug 1 84 can facilitate deposition on the chamber body 102. Dense film. The wide rf ground plate 184 also facilitates the grounding path between the substrate support assembly 138 and the chamber body 1 〇2. Efficacy. It will be appreciated that the embodiment of the extension rod 17〇 and the wide RF ground lug 184 can be applied separately (as shown in Figures 1 B and 1 C) or in combination (as shown in Figure 1A). It will be further appreciated that the embodiment of the extension rod ι7 、, the embodiment of the wide RF ground lug 180 and the methods of application described herein, as well as the derivatives described above, can be used in other processing systems, including those from other manufacturers. In the embodiment depicted in Figure 1A, the grounded chamber body 1 2 has a gas source 104, a power source 122 coupled to a controller (not shown), and a control 10 200834688 for controlling the processing performed in the system 1〇〇. In one embodiment, the controller includes a central processing unit (CPU) (not shown), support circuitry (not shown), and memory (not shown). The CPU is industrially programmable (controls different chambers and sub-processors) One of any form of computer processor. The memory is coupled to the CPU. The memory or computer readable medium can be one or more easily accessible memories, such as random access memory (RAM), read only Memory (ROM), soft , hard disk or any other form of digital storage (local or remote). The support circuit is coupled to the CPU to support the processor in the traditional way. These circuits include cache, power supply, clock circuit (ci〇ck Circuit), input/output circuits, subsystems, etc. The chamber body 102 has side walls 1-6 defining a treatment volume 12, a bottom portion 108 and a lid assembly U0. Generally, the processing volume 112 can be accessed through the slit valve 16 in the side wall 1〇6, and the slit valve 16〇 can promote the large-area substrate 14〇 (hereinafter referred to as “substrate 140”) to enter and exit the chamber body 1 〇 2. The large area substrate 140 can be a glass or polymer workpiece, and in one embodiment it has a flat surface area greater than about 2,500 cm2. While the present invention can be used with any substrate size, the wide RF ground lug 184 of the present invention is particularly advantageous for size 15, 〇〇〇cm2 and above, preferably 4 〇〇〇〇 (4) 2 and above, because Larger pedestals require enhanced grounding. The chamber body 1〇2 = wall and bottom portion 108 are typically constructed of a single aluminum block or other material that is compatible with the processing chemistry. The bottom portion 108 of the chamber body 102 has a pumping port 114 formed therethrough that couples the processing volume 112 to a pumping system (not shown) to facilitate regulating the pressure in the process volume 112 and to vent gases and pairs during processing product. King 11 200834688 The cover assembly 110 is supported by the side wall 106 and is removable to detect the interior of the chamber body 102. The lid assembly 110 is typically constructed of aluminum. The distribution plate 1 18 is coupled to the inner side 1 20 of the cover assembly 1 1 0. The distribution plate 1 18 is usually made of aluminum. The central portion of the distribution plate 1 18 includes a perforated area through which the supply of gas source 104 and other gases can pass to the process volume 112. The perforated area of the distribution plate 1 18 is adapted to provide a consistent gas distribution across the distribution plate 1 1 8 into the chamber body 102. The power source 1 22 is coupled to the distribution board 1 1 8

In the shape-bearing dimension, the gas in the body is in the middle of the body and the 12-body 1 gas reservoir is used to handle the hair. The excitable part can be inside, and the lower pressure is 8 1 partial plate. The electrical component is supplied to the body. The heated substrate support assembly 138 is placed in the center of the chamber body 102 and supports the substrate 140 during processing. The substrate support assembly 138 generally includes a conductive support body 124 supported by a shaft 142 that extends through the chamber bottom portion 108. The support body 124 is generally polygonal in shape and is coated with an electrically insulating coating (not shown) on at least a portion of the body 124 that supports the substrate 140. The coating may also cover other portions of the body 1 24. The substrate support assembly 138 is typically coupled to the ground at least during processing. The support body 124 may be made of metal or other equivalent conductive material (for example, aluminum: the insulating coating may be a dielectric material such as oxide, tantalum nitride, hafnium oxide, aluminum oxide, tantalum pentoxide, tantalum carbide). Or polyimine, etc., which can be applied by different deposition or coating treatments, including but not limited to flame spraying, plasma spraying, high energy coating, and chemistry 12 200834688 Phase deposition, spray coating, adhesive film, sputtering, and encapsulating. In one embodiment, the support body 124 encloses at least one embedded heating element 132 and a thermocouple (not shown). The body 124 can include a Or more hardened members (not shown) made of metal, ceramic or other hardened material are embedded therein.

A heating element 132, such as an electrode or a resistive element, is coupled to a power source (not shown) and controllably heats the support assembly 138 and the substrate 140 thereon to a predetermined temperature. In general, heating element 132 maintains substrate 140 at a consistent temperature of between about 150 ° C and at least about 460 ° C during processing. The heating element 132 is electrically floating relative to the body 1 24. In general, the support assembly 138 has a lower side 126 and an upper side 134 on which the support substrate 140 is disposed. The lower side 126 has a lever cover 144 coupled thereto. The rod cover 144 is typically an aluminum ring coupled to the support assembly 丨38, which provides a mounting surface for the shaft 142 to be coupled thereto. In general, the shaft 142 extends from the stem cover 144 through the chamber bottom 1〇8 and couples the support assembly 138 to the lift system 136, which can be in the raised processing position (as shown) and lowered position The support assembly 1 δ is moved to promote substrate transfer. The bellows 146 provides a vacuum seal between the process volume 112 and the outside air of the chamber body 1〇2 while facilitating vertical movement of the support assembly 138. The shaft 142 additionally provides a conduit for the electrical and thermocouple wires between the support assembly 138 and the system ι other components. The shaft 142 can be electrically isolated from the chamber body 1〇2. In the embodiment illustrated in Figure 1A, a dielectric insulator 128 is placed between the shaft 142 and the chamber body ι2. The insulator can additionally support the shaft 142 or be suitable as its bearing. In one embodiment, the support assembly 丨38 additionally supports a shadow frame (not shown). In general, the shadow frame prevents deposition at the edge of the substrate 14 and the support assembly 138 such that the substrate 14 does not adhere to the support assembly 138. The support assembly 138 has a plurality of configurations in which the holes are well received Upselling 1 500. The lift pin 15 〇 is usually made of ceramic or electroplated aluminum, and when the lift pin 150 is in the normal position (ie, retracted relative to the support assembly ι 3 8 ), the first end is substantially associated with the support assembly The upper side 134 of the 138 is flush or slightly concave. When the support assembly 丨38 is lowered to the transfer position, the lift pin i5〇 contacts the bottom 108 of the chamber body 102 and moves through the support assembly 138 to extend from the upper side ι 3 4 of the support assembly 138. Thereby, the substrate ι 4 分离 is separated from the support assembly 138. In one embodiment, the lift pins of different lengths are used (as shown in Figure 1A) so that they come into contact with the bottom 1 〇 8 and start at different times. For example, the lift pins 150 are spaced apart from the outer edge of the substrate ι 4 ,, and a relatively short lift pin 150 is disposed inwardly spaced from the outer edge toward the center of the substrate 140, such that the base 14 200834688

The material 1 40 is first lifted at the outer edge relative to its center. In another embodiment, the lifting pin 150 of the same length can be used to match the bump or the platform 1 8 2 (indicated by the dashed line) under the outer lifting pin 150, so that the outer lifting pin 5 〇 is earlier The substrate 140 is activated and moved a longer distance from the upper surface 134 (relative to the inner lift pin 150). Alternatively, the chamber bottom 1 〇 8 may include a groove or groove below the inner lift pin 150 such that the inner lift pin 150 moves late and moves a shorter distance than the outer lift pin 150. An embodiment having a system adapted to lift a lift pin of a substrate from a substrate support in an edge-to-center manner and adapted to benefit from the present invention is described in the United States, filed on December 2, 2002 by Shan g et al. U.S. Patent No. 6,676,761, issued on January 31, 2004, and U.S. Patent Application Serial No. 10/460,91, filed on Jun. U.S. Patent No. 7,083,702, issued Oct. 3, 2006, which is incorporated herein by reference in its entirety. The support assembly 138 is typically grounded during processing such that the RF power supplied by the power source 122 to the distribution plate 118 (or other electrode located near or within the cover assembly u〇 of the chamber body 102) can be excited between the supports The gas in the processing volume 1 1 2 between the assembly 1 3 8 and the distribution plate 1 1 8 . The RF power (from power source 1 22) corresponding to the size of the substrate is typically selected to drive the chemical vapor deposition process. Figure 1B is a cross-sectional view of one embodiment of an electric paddle assisted chemical vapor deposition system 1 having a wide RF ground lug 1 84 of the present invention. 15 Referring to Fig. 3, there is generally included a first end 200834688. The second embodiment is a cross-sectional view of an embodiment of a chemical vapor deposition system of the substrate extension rod i 7 本 of the present invention. The middle extension rod 170 passes through the threaded hole, the fixing member 706 and the clamp to the periphery of the conductive support body. 2 is an embodiment in which the extension rod 170 of the embodiment of the substrate support assembly 138 is attached to the substrate support assembly 138, the extension rod 170 having at least one notch 2〇2. The concave stop rod 702 (shown in Figure 7) contacts the extension rod 170 support assembly 138 for any near-upward vertical movement. Although the illustrated embodiment shows an extension rod 17 〇 lightly attached to the periphery of the substrate support, it should be understood that any number of extension rods (e.g., ε can be used in the present invention. An oblique pair of steps using multiple extension rods) It is understood that the extension rod can form an early part and is supported by the substrate. It also describes an embodiment of the embedded 'α-α, several pieces 1 3 2 . With the substrate support ^ fine - strong size The improvement, the surface area is supported, and the parts are installed in the process, ^ is very difficult and in some implementations. Due to the limitations of these sizes, when the support assembly 1 3 8 1 1 0 〇 In the middle, >& ^ ^ ^ before the extension of the extension rod 170 will be used in the processing system 柿 persimmon / in. Therefore, in the support assembly 1: the system of the ^ 100 ^ ^ extension rod 1 70 can Allowing the support group to be lifted by two. Figures 4 and 5, the wide RF connection 302 and a second end 304 and to the plasma assist an embodiment 708 and the drawings, an example of which can be avoided The component 1 3 8 mesh extension rod in the second figure of the substrate can be inserted into the processing group in the substrate branch of the 138 coupling. Item 1 3 8 Mounted on the surface 138 Surface 184 One less twist 16 200834688 306. The first curved portion 3〇8 extends from the meander 3〇6 to the first end 3〇2 and the first “bow portion 310 extends from the meander 3〇6 to the second end 3〇4. The first end 302 includes an Anshang convex The rim 314 and the second end 3〇4 also include a mounting flange 316. The curved portions 308, 310 are generally quadrangular in shape and allow the substrate support assembly 138 to move vertically relative to the bottom of the chamber 。8. In one embodiment The wide RF ground lug 184 has a slit 312 extending from the first curved portion 3〇8 through the meander 306 to the second curved portion 31. The slit 312 helps to increase the flexibility of the wide RF ground lug 1 84. The RF ground lug 1 84 includes a resilient, low-impedance conductive material that withstands the chemical effects of handling and cleaning. In one embodiment, the wide RF ground lug 184 is constructed of the same. Or, a wide RF ground. The sheet 184 may comprise a plastic material coated with a plastic, a stainless steel, a tantalum steel or a conductive metal coating. Figure 3 is one of the plasma-assisted chemical vapor deposition systems having a wide rF grounding strip according to the present invention. A cross-sectional view of an embodiment. A wide RF ground lug 184 provides support assembly 138 and chamber main The RF back between the 〇2 and the 丨匕 motor is controlled. The first end 302 of the wide RF grounding strip 184 is electrically connected to the support assembly 138 via the connection assembly 3 18 and is typically coupled. To the lower side 126 of the support body 124, and the second end 304 is electrically coupled to the bottom of the chamber by means of a bottom clamp 324. For example, a wide rf ground plane i 84 can be Other components are lightly attached to the support body 1 24, such as a fixture, clamp, or other method of maintaining electrical connection between the tooth body U4 and the wide rf ground plate 184. The cleaning and assembly unit 318 The periphery of the support body 124 extends toward and perpendicular to the extension 17 200834688. The 322 Τ 1 ΰ , and the member 3 18 includes a top sheet 32 〇 and a back sheet 322 . The top sheet 32 第 the first piece of the ground piece 184 and the negative film 322 includes a flat plate. The mounting flange 314 between the wide backing sheets 322::3〇2 is placed in the embodiment of the top sheets 320 and 3, and the connecting assembly 3 1 8 is connected via two fixing members. The corresponding threaded hole is fixed to the support body 124. The first end 304 has _安^

^ , , ^ Flange 3 1 6 is coupled with it to promote the wide RF money piece 1 8 4 table black surname = nju ^ , to the bottom 1 0 8 . In one embodiment, the mounting flange 3 16 is secured by a

A threaded hole is secured to the bottom of the chamber 1 0 8 and between the cavity to the bottom 108 and the bottom plate + A - ° tongs 3 24 . It can be understood that a wide RF grounding strip 184 can be attached to the bottom of the chamber by means of an adhesive, sweetening or other spleen-free metal, to the electrical connection between the body 102 and the wide RF grounding strip 184. 0 8 and / or support assembly 1 3 g. Connection assembly 318 and bottom clamp 324 each include a low impedance conductive material that is resistant to processing and cleaning chemistry. In one embodiment, the connection assembly 318 and the bottom clamp 324 comprise aluminum. Alternatively, the material may comprise titanium, stainless steel, tantalum steel or any material coated with a conductive metal coating. In another embodiment, the connection assembly 318 includes a first conductive material and the bottom clamp 324 includes a second conductive material, wherein the first conductive material and the second conductive material are of different materials. In one embodiment, at least a portion of the wide RF ground strip 84 is at a distance X from the side wall 106. The distance between the support body 124 and the side wall 〇6 is γ. The distance χ between at least a portion of the wide RF ground lug 184 and the sidewalls 〇6 is generally less than the distance γ between the support body 1 24 and the sidewall 丨〇6. In an embodiment 18 200834688, for 25K (about 27,750 cm2) or more, it is usually between about 0. 2 cm and about 3 cm. For example, a wide RF ground short RF current is compared to the conventional grounding technique. The return path of the ground. The current is electrically contacted by the substrate 140 electrically contacting the lower side of the support 124 of the support assembly 138. The electrical contact with the wide RF current is transmitted by the body 1 24 through the wide RF ground plane surface coupled to the bottom of the chamber. 108. Furthermore, the wide rf is connected to the ir f k for larger current banding regions, enabling large area processing applications. The wide RF grounding strip 184 high current carrying capacity causes a small voltage difference between the surface of the support assembly 138 and 02, thereby substantially reducing the likelihood of ignition below the building assembly 138, which may be unintentional contamination Things. In one embodiment, the substrate support assembly is grounded by a ground pad 184 that provides a low impedance RF return path in the support body. For example, the four sets of rolls can be lightly coupled to each of the four-sided substrate support bodies 124 including a wide RF ground lug 1 84 between the RF ground lugs 13 between 1 and 丨5. Another embodiment

A wide number of RF grounding lugs 184 are used in conjunction with conventional grounding J. In one embodiment, at least one of the substrates of U.S. Patent Application Serial No. 1/564,463, the entire disclosure of which is incorporated herein by reference. Clearly U is exclusively applied to the substrate 140, and the body 124 is selected. The main 'ground piece 1 8 4, therefore 1 8 4 and reach the ground piece 1 8 4 than its current ideally suitable for a shorter distance and less grounded than the grounded chamber body in the substrate support system 10 2 Splashes each of the multiple RF 1 2 4 and the ground between the ground path member 1 8 4 to the side. Each group 1 8 4, such as 1 1 to , can be joined to a wide RF ground lug 184 using any of the ground paths described in November 2006. The integrity sensor can facilitate monitoring whether the wide RF ground lug i 84 is held to conduct current between the support body 124 and the chamber body 1〇2. Figure 4 is a side view of the wide RF ground strip shown in Figure 3. As shown, the wide RF ground lug 184 is sufficiently flexible to allow the substrate support assembly 138 to change height in the direction indicated by arrow 400. Although the wide RF ground lug 184 shown in Fig. 4 includes only a meander 3〇6, a plurality of zigzags may be formed in the wide RF ground lug 1 84 to form a structure similar to an accordion. Other embodiments also include a ground plane that does not have any tortuous width. The meander 3 〇 6 is located below the polygonal substrate support assembly 3.8 and directed generally parallel to the perimeter of the support assembly 138. The zigzag 3〇6 is pre-formed in the wide RF ground lug 1 84 to increase the lifetime of the wide rf ground lug 1 μ; the vertical movement of the substrate assembly 138 in the direction indicated by the arrow 400 is transmitted to the wide RF ground lug The repeated pressure of 184 may cause a tortuous fracture 'forcing the replacement of the wide RF grounding strip 1 8 4 . Referring to Fig. 1, as the shaft 142 moves downward, a plurality of lift pins 150 contact the bottom of the chamber 1 〇 8 to thereby lift the substrate 1 400 away from the support assembly 13 §. During the downward movement of the shaft 1 4 2, the zigzag 3 06 of the wide RF ground lug 184 projects inwardly from the periphery of the substrate support assembly 138 while still maintaining electrical contact with the periphery of the support assembly 138. As shown in FIG. 4, as the wide rf ground lug 184 flexes, the wide RF ground lug 184 does not intersect the lift lock is. Figure 5 is a plan view of one embodiment of a wide rf ground strip in accordance with the present invention. As described above, the wide RF ground strip 184 has a first end 3〇2 20 200834688

And the second end 304 and at least one zigzag 306. In one embodiment, the length of the ground strip from the first end 302 to the second end 304 is between about 60 cm and about 70 cm, such as about 6 2 c m. In one embodiment, the length of the first curved portion 308 from the meander 3 0 6 toward the first end 312 is between about 30 cm and about 35 cm, such as about 31 cm. In one embodiment, the length of the second curved portion 3 1 0 from the meander 3 0 6 toward the second end 3 04 is between about 30 cm and about 35 c m, for example about 3 1 c m. The curved portion is generally quadrangular in shape and allows vertical movement of the support assembly relative to the bottom of the chamber 108. In one embodiment, the wide RF ground lug 184 has a slit that extends from the first curved portion 308 through the meander 306 to the second curved portion 310. The slit begins at a distance of between about 10 cm and about 20 cm (eg, about 19 cm) from the first end 302 and extends through the tortuous 3 06 and ends at about 10 cm from the second end 3 04 to Between about 20 cm (for example, about 19.9 cm). The slit width is between about 1 cm and about 8 cm (e.g., about 1 · 6 c m wide). The thickness of the wide RF ground lug is between about 0. 2 mm and about about 0 · 3 mm (eg, about 0.25 mm thick). The mounting flange 314 of the first end 302 of the wide RF ground lug 184 includes two securing holes adapted to receive two fasteners disposed through the connecting assembly 3 1 8 (as shown in Figures 3 and 4) Show). The mounting flange 316 of the second end 304 of the wide RF ground lug 184 includes a securing aperture adapted to receive a securing member disposed through the bottom gripper 324. Figure 6A is a side elevational view of one embodiment of a connector assembly 318 in accordance with the present invention. The connector assembly 318 includes a topsheet 320 and a backsheet 322. The topsheet 320 includes an L-shaped sheet and the backsheet 322 includes a flat sheet. Both the topsheet 320 and the backsheet 322 have at least one set of calibrated mounting holes and are adapted to receive at least one solid 21 200834688

A mounting member (not shown), such as the mounting flange support body 124 of the RF ground lug 184 of the mounting screw. Therefore, between the wide rf and the top sheet 3 2 0. The topsheet that extends outwardly and perpendicularly to the assembly 3 18 is disposed through the backsheet 322, the width 314, the topsheet 320, and ultimately through the support 184 to the apertures 602, 604 of the backsheet 322, aligned and adapted To receive at least one fixing member. Figure 6c is a front view of the connection assembly in accordance with Figure 6A of the present invention. Connection assembly D. The periphery of the self-supporting body 124 is shown in Fig. 6B as a top view of the connection 320 according to Fig. 6a of the present invention. Top # has at least - group fixed

Figure 7 is a cross-sectional view of one embodiment of an electropolymer-assisted chemical vapor deposition system having a substrate extension rod in accordance with the present invention. In this embodiment, although the base extension rod 170 of the drawing does not have a wide RF ground lug 184, the base extension rod 170 can be applied with a wide RF ground lug 184 as shown in Fig. 1. The extension rod 170 is attached to the periphery of the support body 1 24 of the substrate support assembly 138. In one embodiment, the extension rods 7 are coupled to the periphery of the support body 124 via threaded holes, fasteners 706 and clamps 708. It will be appreciated that the extension rod i 7 〇 can be attached to the support assembly 138 by an adhesive, brazing or other means. In one embodiment, the extension rod 170 has at least one notch 202. The recess 202 allows the stop lever 702 (attached to the chamber sidewall 106) to contact the extension rod 〇7〇 and avoid any further upward vertical movement of the substrate support assembly 138. The stop levers 7 0 2 are adjustable and can be at different heights, depending on the needs of the user. The substrate extension rod 17 extends downwardly from the lower side 126 of the support assembly 138 and is perpendicular thereto. In other embodiments, the substrate extension rod 1 70 can be modified to form an acute or obtuse angle relative to the lower side 丨 26 of the support assembly 丨38. The desired angle can be selected according to the user's requirements to control the plasma formation on the side wall 丨〇 6 and under the support body 124 of the substrate support assembly 138. The extension rod 1 70 can include a low impedance conductive material that is resistant to processing and cleaning chemistry. In one embodiment, the extension rod 丨7〇 comprises aluminum. Alternatively, the material may comprise titanium, stainless steel (e.g., INC〇NEL8), beryllium copper, or any material coated with a conductive metal coating. In another embodiment, the extension rod i 7 包括 comprises a polymeric material. For example, polymeric materials include materials such as polyphenylene sulfide (PPS) and polyetheretherketone (PEEK). Figure 8 is a cross-sectional view of one embodiment of a plasma-assisted chemical vapor deposition system having a substrate extension rod in accordance with the present invention. In this embodiment, although the base extension rod 802 is not provided with a wide rf ground lug 184, the base extension rod 8〇2 can be applied with a wide RF ground lug 184. In this embodiment, the substrate extension rod 802 is attached to the side of the support body 124. In one embodiment, the extension rod 170 is secured to the circumference of the support body 124 via a threaded bore (not shown) and a fastener (not shown). It will be appreciated that the extension rod 802 can be coupled to the support assembly 138 with an adhesive, clamp, brazing or other means. Figure 9 shows a flow chart 900 depicting the steps of processing a substrate in accordance with an embodiment of the present invention. Referring to the figure, in step 9A2, a wide ground lug 184 is provided which is lightly coupled between the substrate support assembly 138 and the bottom 1b of the chamber. Next in step 904, RF power is supplied to a distribution plate 118 placed over the substrate 14 〇 23 200834688. Next, in step 9〇6, the plasma treatment is applied to the substrate 1 40 on the substrate support assembly 138. Figure 10 shows a flow chart 1 000 illustrating the steps of treating a substrate in accordance with an embodiment of the present invention. Referring to the figure, in step 〇〇2, an extension rod 17 〇 系统 系统 含有 含有 含有 含有 含有 含有 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In step 1004, RF power is supplied to a distribution plate 118 disposed above the substrate 14A. In step 1 006, the flowing gas passes through distribution plate 118. In step 1008, the substrate 140 is placed on a substrate support assembly 138 by plasma processing. In step 1010, the gas flow is regulated to increase the plasma density in the substrate processing chamber. Referring to Figure 1, it is not limited by principle unless explicitly stated in the scope of the patent application 'letter A represents the potential of the disperser 丨i 8, the letter B represents the potential on the support assembly 138, and the letter C represents the wide RF ground plane μ# The upper potential and the letter D represent the potential on the chamber body ι2. In one aspect, however, when a potential (e.g., A potential) is applied to the disperser 1 18, the support assembly 138 is lightly connected to the ground using a wide rf ground plane, but its potential is not zero. It is a certain potential (for example, B potential). The difference between the a potential and the b potential produces a plasma between the disperser 118 and the support assembly 138. Similarly, the difference between the potential (B potential) on the support assembly and the potential (D potential) on the chamber body produces a plasma between the chamber body 1 〇 2 and the support assembly 1 μ. This potential difference causes deposition of an undesired porous film on the chamber body 1〇2. This porous film flakes off during the deposition process, which causes particle contamination in the film. Stomach 24

The 200834688 wide RF ground lug 184 provides a low impedance path between the support assembly 138 and the chamber. The official _ i RF RF grounding piece 184 increase

The potential of the support member 138 can be reduced (B 俨 1fn bit (β potential) so that the potential of the body 102 (D potential), } thus reducing the electrical build-up between the chamber body 102. Wide RF ground lug The increased reduction reduces damage and thus increases the life of the wide RF ground strip. Further, the grounding strip 1 8 4 approaches the chamber side roll; the n & girth sidewall 106 helps to reduce the chamber side support assembly 13...F grounding strip Inductive Electricity (4) The extension rod 170 reduces the airflow on the sidewalls of the chambers 1 and 6 and the channels of the slits. The reduced airflow reduces the porous film deposited on both the sidewalls 1 and 6 of the chambers. Accordingly, methods and apparatus for reducing intra-membrane microfacies in a PECVD chamber have been proposed. The use of a wide RF ground strip and its proximity advantageously reduces the plasma generated in the undesired portion of the chamber, thereby reducing particulate contamination. The RF grounding strip further increases the grounding capability of the support member, and also increases the life of the grounding strip, causing the system to provide further advantages due to the substrate extension rod 170 for chamber cleaning and replacement of the grounding strip, which can be advanced and electrically Pulp is produced. The above is an embodiment of the present invention, but other and further embodiments may be devised without departing from the scope of the invention, and the scope of the application is determined by the scope of the application. The main body 102 is also widened by the width of the main chamber and the support group. The width of the RF wall 106, the amount of t. 1 60, both of the slit channel particle contaminant chamber wall can cause the substrate to provide the life of the substrate and thus reduce. The step control gas is separated from the hairline by the lower - 25 200834688 BRIEF DESCRIPTION OF THE DRAWINGS In order to understand the above-described features of the present invention in detail, a more descriptive description of the present invention, which is briefly described above, may refer to many embodiments (some of which are described in the drawings). However, Other equivalent embodiments are to be understood as merely illustrative of the exemplary embodiments of the invention and are not intended to

1A is a cross-sectional view of one embodiment of a plasma-assisted chemical vapor deposition system having a wide RF grounding strip and substrate extension rod of the present invention; FIG. 1B is a plasma having a wide RF grounding strip of the present invention A cross-sectional view of one embodiment of an auxiliary chemical vapor deposition system; FIG. 1C is a cross-sectional view of one embodiment of a plasma-assisted chemical vapor deposition system having a substrate extension rod of the present invention; FIG. 2 is a substrate support assembly A top view of one embodiment; Figure 3 is a cross-sectional view of one embodiment of a plasma assisted chemical vapor deposition system having a wide RF ground plane in accordance with the present invention; Figure 4 is a wide view of Figure 3 A side cross-sectional view of an RF ground strip; Figure 5 is a plan view of one embodiment of a wide RF ground strip in accordance with the present invention; Figure 6A is a side view of an embodiment of a connection assembly in accordance with the present invention, 26 200834688 6B is a top view of the connection assembly according to FIG. 6A of the present invention, and FIG. 6C is a front view of the connection assembly according to FIG. 6A of the present invention, and FIG. 7 has a substrate extension according to the present invention. Rod-assisted chemistry Vapor Deposition System - Cross-Sectional View of an Embodiment FIG. 8 is a cross-sectional view of an embodiment of a substrate extension vapor deposition system according to the present invention. FIG. 9 is a flow chart showing a process according to the present invention. Steps of the material; and Figure 10 shows a step-by-step diagram of the steps of processing the substrate in accordance with the present invention in order to speed up the understanding of the same elements that may use the same component symbols. It will be appreciated that an embodiment may be advantageously incorporated into other embodiments without further elaboration [Major component notation] 100 System 102 Chamber body 104 Gas source 106 Side wall 108 Bottom 110 Cap assembly 112 Processing volume 114 Pumping 〇 27 200834688

118 Distribution plate 120 Inside 122 Power supply 124 Support body 126 Lower side 128 Insulator 132 Heating element 134 Upper side 136 Lifting system 138 Support assembly 140 Substrate 142 Shaft 144 Rod cover 146 Bellows 150 Lifting pin 160 Slit valve 170 Extension rod 182 Platform 184 Ground lug 202 Notch 302 First end 304 Second end 306 Zigzag 308 First bend 310 Second bend portion 312 Slot 314, 3 1 6 Mounting flange 318 Connection assembly 320 Topsheet 3 22 Backsheet 324 Bottom clamp 400 arrow 602, 604 fixing hole 702 stop rod 706 fixing member 708 lost caliper 8 02 extension rod 900, 1000 flow 902 '904, 906 '1002, 1004, 1006, 1008, partial map 1010 step 28

Claims (1)

200834688 X. Patent Application Range: 1. A substrate processing chamber comprising at least: a chamber body comprising: a chamber bottom; and a side wall having a slit width; a substrate support member Included in the support body, wherein the substrate is disposed in the chamber body; at least one wide RF ground strip including a second end coupled to the first end of the support body and the bottom of the chamber; and at least An extension rod, which is disposed along a periphery of the support body. 2. The substrate processing chamber of claim 1, wherein a distance between at least a portion of the sheet and the sidewall is less than the sidewall A distance between. 3. The substrate processing chamber of claim 1, wherein the extension rod is disposed adjacent to the side wall. 4. The substrate processing chamber of claim 1, wherein the rod extends downward from a lower side of the support body and is perpendicular thereto. 5. The substrate processing chamber of claim 1, wherein the support member is coupled to a lift mechanism, and the lift mechanism is configured to be one of the light support members. In the grounding support body, the substrate is at least in the extension of the substrate. The substrate 29 200834688 The vertical movement of the support. 6. The substrate processing chamber of claim 1, wherein the bottom of the chamber has a pumping port that connects the processing volume of one of the substrate processing chambers to a pumping system. 7. A substrate processing chamber comprising at least: a chamber body comprising: a chamber bottom; and a side wall; a substrate support comprising a support body, wherein the substrate support is disposed in the chamber body; and at least one wide RF A ground strip includes a first end coupled to the substrate support and a second end coupled to the bottom of the chamber. 8. The substrate processing chamber of claim 7, wherein the sidewall has a slit width and a distance between at least a portion of the ground strip and the sidewall is less than between the support body and the sidewall a distance. 9. The substrate processing chamber of claim 7, wherein the wide RF ground strip has a width of between about 1 cm and about 10 cm. 10. The substrate processing chamber of claim 9, wherein the width of the wide 30 200834688 RF ground plane is about 47 cm. The substrate processing chamber of claim 7, wherein the wide RF grounding strip further comprises: at least one meandering 'between the first end and the second end; a first curved portion, Extending from the at least one meander to the first end; and a first curved portion to the at least one meander extending toward the second end. The substrate processing chamber of claim 11, wherein the first end of the grounding piece is coupled to a first mounting flange of a connecting component, the connecting component is coupled to the substrate supporting item. The substrate processing chamber of claim 12, wherein the connection assembly extends outwardly from the substrate support and is substantially parallel to at least one of the ground sheets. A substrate processing chamber comprising at least one chamber body including a side wall; a substrate support member located in the chamber body; and at least one extension rod along the substrate One of the supports is arranged around the periphery. The substrate processing chamber of claim 14, wherein the side wall has a slit valve and the at least one extension rod is disposed adjacent to the side wall. 16. The substrate processing chamber of claim 14, further comprising a stop rod attached to a side wall of the chamber body, wherein the at least one extension rod has at least one suitable for pairing the stop rod Notch. 17. The substrate processing chamber of claim 14, wherein the extension rod extends downwardly from a lower side of the substrate support and is perpendicular thereto. The substrate processing chamber of claim 14, wherein the at least one extension rod comprises aluminum. 19. The substrate processing chamber of claim 14, wherein the substrate processing chamber is a plasma assisted chemical vapor deposition chamber. 20. A method of processing a substrate, comprising at least: providing a processing chamber having a slit valve and a substrate support; providing RF power to a distribution plate disposed above the substrate support; Flowing a gas through the distribution plate; plasma treating a substrate placed on the substrate support; and reducing plasma formation adjacent to the slit. The method of claim 20, wherein the step of reducing plasma formation adjacent the slit width comprises providing a low impedance path between the substrate support and the processing chamber. 22. The method of claim 2, wherein the low impedance path comprises a wide RF ground strip coupled between a substrate support and a bottom of a chamber of the processing chamber. 23. The method of claim 22, wherein a distance between at least a portion of the wide RF ground strip and the slit valve is less than a distance between the substrate support and the slit valve distance. 24. The method of claim 20, wherein the step of reducing plasma formation adjacent the slit is to reduce gas flow between the processing chamber and the substrate support. The method of claim 24, wherein reducing the gas flow between the processing chamber and the substrate support is achieved by coupling an extension rod to a periphery of the substrate support . 33