JP7464692B2 - 基板上にフィルムを形成するための蒸発器チャンバ - Google Patents
基板上にフィルムを形成するための蒸発器チャンバ Download PDFInfo
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- JP7464692B2 JP7464692B2 JP2022503777A JP2022503777A JP7464692B2 JP 7464692 B2 JP7464692 B2 JP 7464692B2 JP 2022503777 A JP2022503777 A JP 2022503777A JP 2022503777 A JP2022503777 A JP 2022503777A JP 7464692 B2 JP7464692 B2 JP 7464692B2
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- 239000000758 substrate Substances 0.000 title claims description 53
- 239000000463 material Substances 0.000 claims description 67
- 238000012545 processing Methods 0.000 claims description 66
- 239000003708 ampul Substances 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 30
- 239000012530 fluid Substances 0.000 claims description 26
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000011364 vaporized material Substances 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 239000002826 coolant Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DCRGHMJXEBSRQG-UHFFFAOYSA-N 1-[1-(cyclooctylmethyl)-5-(hydroxymethyl)-3,6-dihydro-2H-pyridin-4-yl]-3-ethyl-2-benzimidazolone Chemical compound O=C1N(CC)C2=CC=CC=C2N1C(CC1)=C(CO)CN1CC1CCCCCCC1 DCRGHMJXEBSRQG-UHFFFAOYSA-N 0.000 description 1
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical Vapour Deposition (AREA)
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Description
分野
ここに記載の1つ又は複数の実施形態は、概して、半導体処理に関し、より詳細には、半導体処理で基板上にフィルムを形成するための方法及びシステムに関連する。
有機気相堆積は、半導体デバイス及びその他の光学デバイスの構築にますます関連するようになっている。蒸気堆積処理は、一般に、加熱された材料が気化され、次に気化された材料が基板に転写され、その基板の表面上で凝縮するように、所望の圧力で所望の温度に維持される加熱材料を含む。有機蒸気堆積は、CMOSイメージセンサを形成するのにしばしば使用される。しかしながら、有機蒸気堆積を使用して、有機発光ダイオード(OLED)、有機光検出器、太陽電池、及びその他の同様のデバイスを形成することもできる。これらのデバイスは、テレビ画面、コンピュータモニタ、携帯電話、及び情報を表示するための他のハンドヘルドデバイスの製造に使用される。OLEDピクセルは直接発光し、バックライトを必要としないため、OLEDディスプレイで可能な色、明るさ、視野角の範囲は従来のLEDディスプレイよりも大きく、成形されたデバイスのエネルギー消費を抑える。さらに、OLEDはフレキシブル基板上に製造できるため、さらなるデバイス用途も可能になる。
Claims (16)
- 基板を処理するためのシステムであって:
チャンバ本体と;
内部に複数の冷却チャネルが形成されているリッドプレートと;
回転可能なペデスタルであって、その中に形成されている複数の冷却チャネルを有する回転可能なペデスタルと;
前記回転可能なペデスタルの上に配置されているシャワーヘッドであって、複数のセグメントを含むシャワーヘッドと;
複数のアンプルと、
前記シャワーヘッドに結合されている複数の流体供給ラインと;
前記チャンバ本体及び前記複数の流体供給ラインの各々に結合されている1つ又は複数の真空ポンプと
を含み、
前記複数のアンプルの各アンプルが、材料を供給するように構成されており、
前記複数の流体供給ラインの各流体供給ラインが、
前記材料を前記シャワーヘッドに流入させるように構成されている専用のシャットオフ弁であって、開位置及び閉位置で動作可能であり、前記専用のシャットオフ弁の第1の側にある前記シャワーヘッドと、前記専用のシャットオフ弁の第2の側にある各アンプルとの間に配置されている、専用のシャットオフ弁、及び
前記専用のシャットオフ弁と前記1つ又は複数の真空ポンプとの間に配置されている専用のバイパス弁を含み、
前記流体供給ラインの各々の前記専用のバイパス弁は、前記シャワーヘッドと前記1つ又は複数の真空ポンプとの間の、前記1つ又は複数の真空ポンプと各流体供給ラインの前記専用のシャットオフ弁の下流側との間に配置され、
前記1つ又は複数の真空ポンプのうちの少なくとも1つの真空ポンプは、前記専用のシャットオフ弁が前記閉位置にあり、かつ前記専用のバイパス弁がバイパス開位置にあるときに、前記シャワーヘッドの少なくとも一部、及び前記シャワーヘッドと各流体供給ラインの前記専用のシャットオフ弁の前記下流側との間に配置されている各流体供給ラインの少なくとも一部から、前記材料の少なくとも一部を除去するように構成されている、
システム。 - 前記流体供給ラインの各々が加熱される、請求項1に記載のシステム。
- 前記シャワーヘッドを囲んでいるシールドをさらに含む、請求項1に記載のシステム。
- 前記シールドが複数の層を含む、請求項3に記載のシステム。
- 前記シャワーヘッドの前記複数のセグメントの各セグメントが、流体的に隔離されている、請求項1に記載のシステム。
- 前記シャワーヘッドの前記流体的に隔離されているセグメントの各々を囲んでいるシールドをさらに含む、請求項5に記載のシステム。
- 複数のシールド構造をさらに含み、前記複数のシールド構造の各々が、アルミニウム又はステンレス鋼を含む熱伝導性材料で作られている、請求項1に記載のシステム。
- 前記複数のシールド構造が、
前記複数のセグメントの各セグメントの上にある上壁と、
前記上壁に結合された側壁とを含み、前記側壁は、前記複数のセグメントの各セグメントの各縁壁のそれぞれの周囲を囲んでおり、前記複数のセグメントの各セグメントとそれに隣接するセグメントとの間に少なくとも部分的に配置されている、請求項7に記載のシステム。 - 複数のアンプル加熱要素をさらに含み、前記複数のアンプル加熱要素の各アンプル加熱要素は、前記複数のアンプルの各アンプルを加熱するように構成されている、請求項1に記載のシステム。
- 前記流体供給ラインの各々が、前記シャワーヘッドの前記複数のセグメントのうちの1つに結合され、前記複数のセグメント間に1つ又は複数の間隙が配置され、少なくとも2つのシールド構造の前記側壁が、前記複数のセグメントを分離するように、前記1つ又は複数の間隙の各々内に配置される、請求項8に記載のシステム。
- 前記複数のセグメントの各セグメントが、前記複数のシールド構造のうちの少なくとも1つのシールド構造によって熱的に分離されている、請求項7に記載のシステム。
- 前記シャワーヘッド及び前記回転可能なペデスタルを囲んでいる、前記リッドプレートに結合されたシュラウドをさらに含む、請求項1に記載のシステム。
- 前記シャワーヘッドの前記複数のセグメントの各セグメントが、トッププレートから離隔されている穿孔プレートを含み、前記トッププレートと前記穿孔プレートとの間で内部領域が画定されている、請求項8に記載のシステム。
- 前記上壁が、各セグメントの前記トッププレートの上にある、請求項13に記載のシステム。
- 前記流体供給ラインの各々が加熱され、
複数のプッシュガス源アセンブリであって、各プッシュガス源アセンブリが、各アンプルにプッシュガスを供給するように構成されており、各アンプル及び各アンプル加熱要素が、各プッシュガス源アセンブリと前記シャワーヘッドとの間に配置されている、複数のプッシュガス源アセンブリをさらに含む、請求項1に記載のシステム。 - 前記複数のシールド構造が複数の層を含む、請求項7に記載のシステム。
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