JP2017224825A - カルーセル原子層堆積のための装置および方法 - Google Patents
カルーセル原子層堆積のための装置および方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
Abstract
【解決手段】能動的な個々の噴射器パイを有する。噴射器パイは、運動学的マウントにより3点で機械的に水平にされ、基準面を形成するために基準構造体に固定される。噴射器パイは、気体軸受がサセプタの上に浮くためのパージ孔を有するか、または噴射器パイに装着される気体軸受けパッドを有する。噴射器パイの各々は、3点で水平にするための機械的、空気圧または電気的機構を有する。
【選択図】なし
Description
Claims (15)
- 中心軸のまわりに放射状に配設された複数のパイ形状セグメントを含むガス分配アセンブリであって、前記パイ形状セグメントが複数の放射状チャネルを含み、各放射状チャネルが前記パイ形状セグメントの形状に合致する形状を有する、ガス分配アセンブリ。
- 3つの水平化ユニットの各々が、独立に、運動学的マウントおよびボイスコイルの一方である、請求項1に記載のガス分配アセンブリ。
- 可動案内パイ形状セグメントをさらに含む、請求項2に記載のガス分配アセンブリ。
- 前記可動案内パイ形状セグメントが、基板を前記ガス分配アセンブリの下に配置することができるようにするために移動可能である、請求項3に記載のガス分配アセンブリ。
- 前記可動案内パイ形状セグメントが、能動セグメント、ダミーセグメント、加熱セグメント、およびプラズマ処置セグメントのうちの1つまたは複数である、請求項3に記載のガス分配アセンブリ。
- 回転可能な中心支持体と、
前記回転可能な中心支持体のまわりに放射状に配設された複数のパイ形状セグメントであり、各パイ形状セグメントの少なくとも一部分が、前記回転可能な中心支持体に接触する、複数のパイ形状セグメントと
を含むサセプタアセンブリ。 - 前記回転可能な中心支持体が石英基部を含み、前記複数のパイ形状セグメントの各々が、前記石英基部によって支持される、請求項6に記載のサセプタアセンブリ。
- 前記石英基部が、前記複数のパイ形状セグメントの各々のすべてを支持する中実ディスクを含む、請求項7に記載のサセプタアセンブリ。
- 前記石英基部が、中心軸から延びてスポークフレームを形成する複数のスポークを含み、前記パイ形状セグメントの各々が、少なくとも1つのスポークに載る、請求項7に記載のサセプタアセンブリ。
- 前記石英基部が、ガス通路を通って流れるガスが前記通路を出て、前記パイ形状セグメントに圧力を印加することができるようにするために、複数の開孔と流体連通する複数の前記ガス通路を含む、請求項7に記載のサセプタアセンブリ。
- 前記パイ形状セグメントの各々が、少なくとも2つの接続点によって前記中心支持体に接続される、請求項6に記載のサセプタアセンブリ。
- 前記パイ形状セグメントのすべてが、石英気体軸受リングによって外側周囲エッジで支持される、請求項6に記載のサセプタアセンブリ。
- ガス分配アセンブリと、
請求項6に記載の前記サセプタアセンブリと、
前記ガス分配アセンブリと前記サセプタアセンブリとの間の距離を決定するために位置づけられたセンサと、
複数の気体軸受パッドと、
前記複数の気体軸受パッドが、前記サセプタアセンブリのすべてまたは一部分を前記ガス分配アセンブリに近づけ、および前記ガス分配アセンブリから遠ざけるために、前記センサおよび前記複数の気体軸受パッドに接続された、フィードバック回路と
を含む処理チャンバ。 - 前記気体軸受パッドが、前記パイ形状セグメントの各々を独立に移動させるために前記サセプタアセンブリの上方におよび下方に位置づけられる、請求項13に記載の処理チャンバ。
- 前記気体軸受パッドが、前記サセプタアセンブリの外側周囲エッジのうちの1つまたは複数に、または前記パイ形状セグメントの内側エッジに隣接する前記サセプタアセンブリの中心軸の方に位置づけられる、請求項13に記載の処理チャンバ。
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CN (2) | CN107974668B (ja) |
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JP6412984B2 (ja) | 2018-10-24 |
CN105051251B (zh) | 2018-01-02 |
KR102147372B1 (ko) | 2020-08-24 |
WO2014130670A1 (en) | 2014-08-28 |
KR102201946B1 (ko) | 2021-01-11 |
US20150376786A1 (en) | 2015-12-31 |
CN107974668A (zh) | 2018-05-01 |
KR20150120400A (ko) | 2015-10-27 |
CN105051251A (zh) | 2015-11-11 |
KR20170084363A (ko) | 2017-07-19 |
JP2016510945A (ja) | 2016-04-11 |
CN107974668B (zh) | 2020-03-20 |
TW201437421A (zh) | 2014-10-01 |
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