JP2007177319A - 蒸発源及びそれを用いた薄膜蒸着方法 - Google Patents
蒸発源及びそれを用いた薄膜蒸着方法 Download PDFInfo
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- JP2007177319A JP2007177319A JP2006198641A JP2006198641A JP2007177319A JP 2007177319 A JP2007177319 A JP 2007177319A JP 2006198641 A JP2006198641 A JP 2006198641A JP 2006198641 A JP2006198641 A JP 2006198641A JP 2007177319 A JP2007177319 A JP 2007177319A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 83
- 230000008020 evaporation Effects 0.000 title claims abstract description 79
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000000151 deposition Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000005416 organic matter Substances 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000007921 spray Substances 0.000 claims abstract description 20
- 239000011368 organic material Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 14
- 238000007736 thin film deposition technique Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims 2
- 230000006698 induction Effects 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005336 cracking Methods 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 5
- 238000005507 spraying Methods 0.000 abstract 1
- 239000011146 organic particle Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
Abstract
【解決手段】有機材料の蒸発時に凝集し得る蒸発粒子のクラッキング効果(cracking effect)を最大化することができる蒸発源及びそれを用いた薄膜蒸着方法に関する。本発明による有機薄膜材料である有機物が収納され、加熱部を有するるつぼと、前記有機物を基板に噴射する少なくとも一つの噴射ノズルとを備える蒸発源において、前記るつぼは蒸発する前記有機物の移動経路上に配設される少なくとも一つのバッフルを有し、前記噴射ノズルは、輻射熱を遮断することができるシャワーヘッド構造を有する。
【選択図】図2
Description
22…マスク
24、30、40…蒸発源
25…蒸着率測定器
33、41…るつぼ
37、42…有機物
Claims (11)
- 有機薄膜材料である有機物が収納され、加熱部を有するるつぼと、前記有機物を基板に噴射する少なくとも一つの噴射ノズルとを備える蒸発源において、
前記るつぼは、蒸発する前記有機物の移動経路上に配設される少なくとも一つのバッフルを有し、前記噴射ノズルは、少なくとも一つの噴射口が形成されたシャワーヘッド構造に形成されていることを特徴とする蒸発源。 - 前記バッフルは、2段乃至5段に形成されることを特徴とする請求項1に記載の蒸発源。
- 前記シャワーヘッド構造の噴射ノズルは、輻射熱を遮断することを特徴とする請求項1に記載の蒸発源。
- 前記蒸発源は、前記基板上の蒸着結果をモニタリングすることができる蒸着率測定モニタをさらに備えることを特徴とする請求項1に記載の蒸発源。
- 前記加熱部とハウジングの間にリフレクタがさらに備えられることを特徴とする請求項1に記載の蒸発源。
- 前記るつぼは、前記有機物を基板方向に転換する誘導路をさらに有することを特徴とする請求項1に記載の蒸発源。
- 前記るつぼは、前記誘導路の熱が基板方向に輻射されるのを防止するため、防熱板をさらに有することを特徴とする請求項6に記載の蒸発源。
- 前記噴射ノズルは、前記防熱板を貫通して突出することを特徴とする請求項1に記載の蒸発源。
- 真空チャンバ内に加熱部を有し、有機薄膜材料を収納するるつぼを備える蒸発源を配設する工程と、
前記蒸発源と対向するように基板を配置する工程と、
前記るつぼを加熱して気化した有機物が多段に形成されたバッフルを通過することによって凝集状態の前記有機物が分解される工程と、
前記バッフルを通過した前記有機物がシャワーヘッド構造を有する噴射ノズルを通じて噴射されて、前記基板上に有機物を蒸着する成膜工程とを有することを特徴とする薄膜蒸着方法。 - 前記有機物が通過する前記バッフルは、2段乃至5段に形成されることを特徴とする請求項9に記載の薄膜蒸着方法。
- 前記成膜工程において、蒸着率測定モニタを用いて薄膜の厚さを制御することを特徴とする請求項9に記載の薄膜蒸着方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0131489 | 2005-12-28 | ||
KR1020050131489A KR100729097B1 (ko) | 2005-12-28 | 2005-12-28 | 증발원 및 이를 이용한 박막 증착방법 |
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JP2007177319A true JP2007177319A (ja) | 2007-07-12 |
JP4842039B2 JP4842039B2 (ja) | 2011-12-21 |
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JP2006198641A Active JP4842039B2 (ja) | 2005-12-28 | 2006-07-20 | 蒸発源及びそれを用いた薄膜蒸着方法 |
Country Status (6)
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US (1) | US20070148348A1 (ja) |
EP (1) | EP1803836B1 (ja) |
JP (1) | JP4842039B2 (ja) |
KR (1) | KR100729097B1 (ja) |
CN (1) | CN1990902A (ja) |
TW (1) | TWI335357B (ja) |
Cited By (6)
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KR101152578B1 (ko) | 2009-05-04 | 2012-06-01 | 삼성모바일디스플레이주식회사 | 유기물 증착 장치 및 이를 구비한 유기물 증착 시스템과 증착 방법 |
JP2012107302A (ja) * | 2010-11-19 | 2012-06-07 | Ulvac Japan Ltd | 蒸着装置及び蒸着方法 |
JP2012112037A (ja) * | 2010-11-04 | 2012-06-14 | Canon Inc | 成膜装置及びこれを用いた成膜方法 |
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Also Published As
Publication number | Publication date |
---|---|
TWI335357B (en) | 2011-01-01 |
TW200730649A (en) | 2007-08-16 |
CN1990902A (zh) | 2007-07-04 |
EP1803836B1 (en) | 2018-04-25 |
US20070148348A1 (en) | 2007-06-28 |
JP4842039B2 (ja) | 2011-12-21 |
KR100729097B1 (ko) | 2007-06-14 |
EP1803836A1 (en) | 2007-07-04 |
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