JP2011508937A - 複数セル基板を有するnandフラッシュメモリ - Google Patents
複数セル基板を有するnandフラッシュメモリ Download PDFInfo
- Publication number
- JP2011508937A JP2011508937A JP2010540995A JP2010540995A JP2011508937A JP 2011508937 A JP2011508937 A JP 2011508937A JP 2010540995 A JP2010540995 A JP 2010540995A JP 2010540995 A JP2010540995 A JP 2010540995A JP 2011508937 A JP2011508937 A JP 2011508937A
- Authority
- JP
- Japan
- Prior art keywords
- well
- flash memory
- bit line
- nand flash
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
本発明は、その内容が参照により全体が本明細書中に組み込まれている、2008年1月7日に出願した米国特許仮出願番号第61/019,415号、及び2008年6月20日に出願した米国特許出願番号第12/143415号の優先権を主張するものである。
るが、概説された図1Bのブロックのそれぞれがフラッシュメモリチップ10の適正な動作を実現するために必要な全ての回路を含むであろうことを、当業者は理解するであろう。
16 行デコーダ
18、20、106、206、306 ページバッファ
24、108、208、308 チャージポンプ
30、232、338 NANDセルストリング
32 ストリング選択デバイス
34 フラッシュメモリセル
36 選択デバイス
38、40、56、58、60、62、234、236、238、330、332、334、336 メモリブロック
50、230、328 基板
52、228、326 n-型ウェル
54、226、324 p-型ウェル
104、204、304 行デコーダ/ドライバ
110、210、310 セレクタ
220、222、224、320、322、508、510、512、514 ウェルセクタ
402、516 分離デバイス
Claims (29)
- 消去動作中に消去電圧を選択的に受ける第1NANDセルストリングを有する第1ウェルセクタと、
前記消去動作中に前記消去電圧を選択的に受ける第2NANDセルストリングを有する第2ウェルセクタと、
前記第1NANDセルストリングと前記第2NANDセルストリングとに電気的に接続されたビット線と、
前記ビット線に電気的に接続されたページバッファと
を備える、NANDフラッシュメモリ。 - 前記第1ウェルセクタは、第2ビット線に電気的に接続された第3NANDセルストリングを含み、前記第2ウェルセクタは、前記第2ビット線に電気的に接続された第4NANDセルストリングを含み、前記第2ビット線は、前記ページバッファに電気的に接続される、請求項1に記載のNANDフラッシュメモリ。
- 前記第1NANDセルストリング及び前記第3NANDセルストリングは、1つのメモリブロックの一部であり、前記第2NANDセルストリング及び前記第4NANDセルストリングは、別の1つのメモリブロックの一部である、請求項2に記載のNANDフラッシュメモリ。
- 前記第1ウェルセクタは、前記ビット線に電気的に接続された第3NANDセルストリングを含み、前記第2ウェルセクタは、前記ビット線に電気的に接続された第4NANDセルストリングを含む、請求項1に記載のNANDフラッシュメモリ。
- 前記第1NANDセルストリングは、第1メモリブロックの一部であり、前記第3NANDセルストリングは、第2メモリブロックの一部であり、前記第2NANDセルストリングは、第3メモリブロックの一部であり、前記第4NANDセルストリングは、第4メモリブロックの一部である、請求項4に記載のNANDフラッシュメモリ。
- ブロックアドレスに応じて消去のために、前記第1メモリブロック、前記第2メモリブロック、前記第3メモリブロック、及び前記第4メモリブロックのうちの1つを選択するためのブロックデコーダ、をさらに含む、請求項5に記載のNANDフラッシュメモリ。
- 消去電圧を供給するためのチャージポンプと、
前記ブロックアドレスに応じて、前記第1ウェルセクタ及び前記第2ウェルセクタのうちの1つに前記消去電圧を結合するためのセレクタと
をさらに含む、請求項6に記載のNANDフラッシュメモリ。 - 前記ビット線は、前記第1NANDセルストリングに電気的に接続された第1ビット線セグメントと、分離デバイスを通して前記第2NANDセルストリングに電気的に接続された第2ビット線セグメント、を含む、請求項1に記載のNANDフラッシュメモリ。
- 前記分離デバイスは、前記第1ウェルセクタと前記第2ウェルセクタとの間に置かれる、請求項8に記載のNANDフラッシュメモリ。
- 前記分離デバイスは、書込み動作、読出し動作、及び前記消去動作中に電源電圧VDDよりも高い電圧にバイアスされるゲート端子を有する、請求項8に記載のNANDフラッシュメモリ。
- 前記分離デバイスは、前記第1NANDセルストリング及び前記第2NANDセルストリングのうちの1つが消去のために選択されるときに、前記第2ビット線セグメントから前記第1ビット線セグメントを分離するために前記消去動作において電気的に非伝導性である、請求項8に記載のNANDフラッシュメモリ。
- 前記分離デバイスは、制御信号に応じてオフにされる、請求項8に記載のNANDフラッシュメモリ。
- 前記分離デバイスは、ウェルセクタ選択信号に応じてオフにされる、請求項8に記載のNANDフラッシュメモリ。
- 読出し動作中にウェルセクタ選択信号に応じて前記分離デバイスをイネーブルにするためのビット線セグメントデコーダをさらに含み、前記ビット線セグメントデコーダは、消去動作中に消去制御信号に応じて前記分離デバイスをディスエーブルにする、請求項8に記載のNANDフラッシュメモリ。
- 前記ビット線セグメントデコーダは、前記消去制御信号と前記ウェルセクタ選択信号とを受け取るための分離デバイスドライバを含み、前記分離デバイスドライバは、前記ウェルセクタ選択信号がアクティブ論理レベルであるときに、前記分離デバイスを制御するための分離駆動信号を供給する、請求項14に記載のNANDフラッシュメモリ。
- 前記分離デバイスドライバは、前記アクティブ論理レベルである別の1つのウェルセクタ選択信号に応じて前記ウェルセクタ選択信号を前記アクティブ論理レベルへと駆動するためのオーバーライド回路を含む、請求項15に記載のNANDフラッシュメモリ。
- NANDセルストリングの少なくとも1つのメモリブロックを各々が含む少なくとも2つのウェルセクタであって、前記少なくとも2つのウェルセクタの各々の中の前記少なくとも1つのメモリブロックが対応するビット線セグメントに電気的に接続される、前記少なくとも2つのウェルセクタと、
前記少なくとも2つのウェルセクタに対応する前記ビット線セグメント間に結合された分離デバイスと
を備えるNANDフラッシュメモリ。 - 前記分離デバイスは、所定の電圧にバイアスされるゲート端子を有する、請求項17に記載のNANDフラッシュメモリ。
- 前記所定の電圧は、電源電圧VDDよりも高い、請求項18に記載のNANDフラッシュメモリ。
- 前記分離デバイスは、消去動作中にオフにされる、請求項17に記載のNANDフラッシュメモリ。
- 前記分離デバイスは、読出し動作中に選択的にオフにされる、請求項17に記載のNANDフラッシュメモリ。
- 選択メモリブロックを含む選択ウェルセクタとページバッファとの間の前記分離デバイスは、読出し動作中にオンにされる、請求項21に記載のNANDフラッシュメモリ。
- 前記少なくとも2つのウェルセクタの各々は、2つのメモリブロックを含む、請求項17に記載のNANDフラッシュメモリ。
- 前記少なくとも2つのウェルセクタのうちの1つへ消去電圧を選択的に渡すためのセレクタをさらに含む、請求項17に記載のNANDフラッシュメモリ。
- 前記セレクタは、ブロックアドレスの一部に応じて前記少なくとも2つのウェルセクタのうちの1つに前記消去電圧を結合し、前記ブロックアドレスは、消去のために1つのメモリブロックを選択するためにデコードされる、請求項24に記載のNANDフラッシュメモリ。
- 前記少なくとも2つのウェルセクタのうちの1つに対応する前記ビット線セグメントに電気的に接続されたページバッファをさらに含む、請求項17に記載のNANDフラッシュメモリ。
- NANDフラッシュデバイス中の選択されたメモリブロックを消去するための方法において、
第1ウェルセクタ中のメモリブロックを選択する段階であって、前記第1ウェルセクタは少なくとも2つのメモリブロックを含む、段階と、
消去のために前記第1ウェルセクタ中に形成された前記メモリブロックをバイアスする段階と、
消去を禁止するために前記第1ウェルセクタ中に形成された非選択メモリブロックをバイアスする段階と、
前記第1ウェルセクタに消去電圧を印加する段階と、
少なくとも別の2つのメモリブロックを含む第2ウェルセクタへの前記消去電圧の印加を禁止する段階と
を備える方法。 - 前記第1ウェルセクタに前記消去電圧を印加する前に、前記第1ウェルセクタと前記第2ウェルセクタとに対応するビット線セグメントを互いに切り離す段階をさらに含む、請求項27に記載の方法。
- 前記第1ウェルセクタのビット線電圧が分離デバイスのゲート端子に印加される少なくとも所定のバイアス電圧であるときに、前記第1ウェルセクタと前記第2ウェルセクタとに対応するビット線セグメントを前記分離デバイスにより互いに切り離す段階をさらに含む、請求項27に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1941508P | 2008-01-07 | 2008-01-07 | |
US61/019,415 | 2008-01-07 | ||
US12/143,285 | 2008-06-20 | ||
US12/143,285 US7940572B2 (en) | 2008-01-07 | 2008-06-20 | NAND flash memory having multiple cell substrates |
PCT/CA2008/002287 WO2009086618A1 (en) | 2008-01-07 | 2008-12-23 | Nand flash memory having multiple cell substrates |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013238531A Division JP2014032738A (ja) | 2008-01-07 | 2013-11-19 | 複数セル基板を有するnandフラッシュメモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011508937A true JP2011508937A (ja) | 2011-03-17 |
JP5420567B2 JP5420567B2 (ja) | 2014-02-19 |
Family
ID=40844422
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010540995A Expired - Fee Related JP5420567B2 (ja) | 2008-01-07 | 2008-12-23 | 複数セル基板を有するnandフラッシュメモリ |
JP2013238531A Pending JP2014032738A (ja) | 2008-01-07 | 2013-11-19 | 複数セル基板を有するnandフラッシュメモリ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013238531A Pending JP2014032738A (ja) | 2008-01-07 | 2013-11-19 | 複数セル基板を有するnandフラッシュメモリ |
Country Status (8)
Country | Link |
---|---|
US (5) | US7940572B2 (ja) |
EP (1) | EP2238597A4 (ja) |
JP (2) | JP5420567B2 (ja) |
KR (2) | KR20100110766A (ja) |
CN (1) | CN101842849A (ja) |
CA (1) | CA2701625A1 (ja) |
TW (2) | TWI446524B (ja) |
WO (1) | WO2009086618A1 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110092523A (ko) * | 2010-02-09 | 2011-08-18 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US8792282B2 (en) | 2010-03-04 | 2014-07-29 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, memory systems and computing systems |
JP2014170599A (ja) * | 2013-03-01 | 2014-09-18 | Toshiba Corp | 半導体記憶装置 |
US8908431B2 (en) | 2010-02-17 | 2014-12-09 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
US8923060B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and operating methods thereof |
US8923053B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof, and memory system including the same |
US8929145B2 (en) | 2010-02-18 | 2015-01-06 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, programming method thereof and memory system including the same |
US8964476B2 (en) | 2010-02-17 | 2015-02-24 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US9324440B2 (en) | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9378831B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
KR101736455B1 (ko) | 2016-09-06 | 2017-05-17 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US9741438B2 (en) | 2013-09-16 | 2017-08-22 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and program method thereof |
US9881685B2 (en) | 2010-08-26 | 2018-01-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof and memory system including the same |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6982892B2 (en) * | 2003-05-08 | 2006-01-03 | Micron Technology, Inc. | Apparatus and methods for a physical layout of simultaneously sub-accessible memory modules |
AU2006213686A1 (en) * | 2005-02-09 | 2006-08-17 | Avi Bio Pharma, Inc. | Antisense composition and method for treating muscle atrophy |
US7940572B2 (en) * | 2008-01-07 | 2011-05-10 | Mosaid Technologies Incorporated | NAND flash memory having multiple cell substrates |
JP2009266946A (ja) | 2008-04-23 | 2009-11-12 | Toshiba Corp | 三次元積層不揮発性半導体メモリ |
US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
US8553466B2 (en) * | 2010-03-04 | 2013-10-08 | Samsung Electronics Co., Ltd. | Non-volatile memory device, erasing method thereof, and memory system including the same |
IT1400967B1 (it) | 2010-06-15 | 2013-07-05 | St Microelectronics Srl | Dispositivo di memoria non volatile con circuito di riconnessione |
IT1400968B1 (it) | 2010-06-15 | 2013-07-05 | St Microelectronics Srl | Dispositivo di memoria non-volatile con scarica controllata |
KR101742790B1 (ko) | 2010-11-16 | 2017-06-01 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 소거 방법, 그리고 그것을 포함하는 메모리 시스템 |
KR101762828B1 (ko) | 2011-04-05 | 2017-07-31 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법 |
US10192859B2 (en) * | 2011-05-11 | 2019-01-29 | Texas Instruments Incorporated | Integrated circuits and processes for protection of standard cell performance from context effects |
FR2975813B1 (fr) * | 2011-05-24 | 2014-04-11 | St Microelectronics Rousset | Reduction du courant de programmation des matrices memoires |
US8853833B2 (en) | 2011-06-13 | 2014-10-07 | Micron Technology, Inc. | Electromagnetic shield and associated methods |
JP2013058276A (ja) * | 2011-09-07 | 2013-03-28 | Toshiba Corp | 半導体記憶装置 |
WO2013045970A1 (en) * | 2011-09-30 | 2013-04-04 | Soitec | Pseudo-inverter circuit with multiple independent gate transistors |
JP2013084318A (ja) * | 2011-10-06 | 2013-05-09 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR101868377B1 (ko) * | 2012-03-06 | 2018-06-19 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
KR102083490B1 (ko) * | 2012-08-08 | 2020-03-03 | 삼성전자 주식회사 | 비휘발성 메모리 장치, 이를 포함하는 메모리 시스템 및 비휘발성 메모리 장치의 커맨드 실행 제어 방법 |
US8958244B2 (en) | 2012-10-16 | 2015-02-17 | Conversant Intellectual Property Management Inc. | Split block decoder for a nonvolatile memory device |
US9704580B2 (en) * | 2012-10-22 | 2017-07-11 | Conversant Intellectual Property Management Inc. | Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices |
KR102040904B1 (ko) * | 2012-11-05 | 2019-11-05 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
US9030879B2 (en) | 2012-11-15 | 2015-05-12 | Conversant Intellectual Property Management Incorporated | Method and system for programming non-volatile memory with junctionless cells |
US10403766B2 (en) | 2012-12-04 | 2019-09-03 | Conversant Intellectual Property Management Inc. | NAND flash memory with vertical cell stack structure and method for manufacturing same |
US9007834B2 (en) * | 2013-01-10 | 2015-04-14 | Conversant Intellectual Property Management Inc. | Nonvolatile memory with split substrate select gates and hierarchical bitline configuration |
US9202931B2 (en) | 2013-03-14 | 2015-12-01 | Conversant Intellectual Property Management Inc. | Structure and method for manufacture of memory device with thin silicon body |
US9025382B2 (en) | 2013-03-14 | 2015-05-05 | Conversant Intellectual Property Management Inc. | Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof |
US9214235B2 (en) | 2013-04-16 | 2015-12-15 | Conversant Intellectual Property Management Inc. | U-shaped common-body type cell string |
US9406362B2 (en) | 2013-06-17 | 2016-08-02 | Micron Technology, Inc. | Memory tile access and selection patterns |
US9496034B2 (en) | 2013-09-06 | 2016-11-15 | Sony Semiconductor Solutions Corporation | Memory device with a common source line masking circuit |
KR102139944B1 (ko) | 2013-11-26 | 2020-08-03 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
KR102210520B1 (ko) * | 2013-12-19 | 2021-02-02 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 소거 방법 |
CN104810057B (zh) * | 2014-01-27 | 2019-05-24 | 华邦电子股份有限公司 | 闪存存储器装置及闪存存储器的抹除方法 |
US9196367B2 (en) * | 2014-04-02 | 2015-11-24 | Ememory Technology Inc. | Non-volatile memory apparatus and erasing method thereof |
KR102245822B1 (ko) | 2014-11-26 | 2021-04-30 | 삼성전자주식회사 | 불휘발성 메모리 장치를 포함하는 저장 장치 및 그것의 프로그램 방법 |
TWI573142B (zh) * | 2015-02-02 | 2017-03-01 | 慧榮科技股份有限公司 | 資料儲存裝置以及資料維護方法 |
CN105989886B (zh) * | 2015-02-16 | 2019-09-17 | 华邦电子股份有限公司 | 非易失性半导体存储装置 |
KR20160133688A (ko) | 2015-05-13 | 2016-11-23 | 삼성전자주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
JP6122478B1 (ja) * | 2015-10-22 | 2017-04-26 | ウィンボンド エレクトロニクス コーポレーション | 不揮発性半導体記憶装置 |
JP6027665B1 (ja) * | 2015-11-10 | 2016-11-16 | ウィンボンド エレクトロニクス コーポレーション | 不揮発性半導体記憶装置 |
KR102219290B1 (ko) * | 2017-03-22 | 2021-02-23 | 삼성전자 주식회사 | 비휘발성 메모리 장치 |
KR102442933B1 (ko) * | 2017-08-21 | 2022-09-15 | 삼성전자주식회사 | 3차원 반도체 장치 |
CN109754834B (zh) * | 2017-11-02 | 2021-02-09 | 中芯国际集成电路制造(上海)有限公司 | 字线译码电路、sram以及形成方法 |
US10453533B2 (en) | 2017-11-17 | 2019-10-22 | Micron Technology, Inc. | Memory devices with distributed block select for a vertical string driver tile architecture |
US10714166B2 (en) * | 2018-08-13 | 2020-07-14 | Micron Technology, Inc. | Apparatus and methods for decoding memory access addresses for access operations |
KR102668014B1 (ko) * | 2018-10-25 | 2024-05-22 | 삼성전자주식회사 | 비휘발성 메모리 장치, 수직형 낸드 플래시 메모리 장치 및 이를 포함하는 에스에스디 장치 |
US11972811B2 (en) | 2018-11-18 | 2024-04-30 | NEO Semiconductor, Inc. | Methods and apparatus for NAND flash memory |
US11056190B2 (en) | 2018-11-18 | 2021-07-06 | NEO Semiconductor, Inc. | Methods and apparatus for NAND flash memory |
US12002525B2 (en) | 2018-11-18 | 2024-06-04 | NEO Semiconductor, Inc. | Methods and apparatus for NAND flash memory |
US11049579B2 (en) | 2018-11-18 | 2021-06-29 | Fu-Chang Hsu | Methods and apparatus for NAND flash memory |
US10741253B1 (en) | 2019-02-20 | 2020-08-11 | Sandisk Technologies Llc | Memory device with compensation for erase speed variations due to blocking oxide layer thinning |
US10998074B2 (en) | 2019-07-22 | 2021-05-04 | Micron Technology, Inc. | Wordline capacitance balancing |
US10878899B1 (en) | 2019-09-27 | 2020-12-29 | Intel Corporation | Low voltage, low power sensing based on level shifting sensing circuit |
US11177280B1 (en) | 2020-05-18 | 2021-11-16 | Sandisk Technologies Llc | Three-dimensional memory device including wrap around word lines and methods of forming the same |
US11348637B2 (en) * | 2020-08-31 | 2022-05-31 | Micron Technology, Inc. | Electrical distance-based remapping in a memory device |
WO2023272470A1 (en) * | 2021-06-29 | 2023-01-05 | Yangtze Memory Technologies Co., Ltd. | Page buffer circuits in three-dimensional memory devices |
US11769560B2 (en) | 2021-08-13 | 2023-09-26 | Sandisk Technologies Llc | String based erase inhibit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09162373A (ja) * | 1995-12-04 | 1997-06-20 | Hitachi Ltd | 不揮発性記憶装置 |
JPH11339487A (ja) * | 1998-05-22 | 1999-12-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2000030473A (ja) * | 1998-07-14 | 2000-01-28 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2001210808A (ja) * | 2000-01-27 | 2001-08-03 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
Family Cites Families (118)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4174536A (en) | 1977-01-21 | 1979-11-13 | Massachusetts Institute Of Technology | Digital communications controller with firmware control |
DE3586523T2 (de) | 1984-10-17 | 1993-01-07 | Fujitsu Ltd | Halbleiterspeicheranordnung mit einer seriellen dateneingangs- und ausgangsschaltung. |
US4683555A (en) | 1985-01-22 | 1987-07-28 | Texas Instruments Incorporated | Serial accessed semiconductor memory with reconfigureable shift registers |
WO1990010903A1 (en) | 1989-03-15 | 1990-09-20 | Oki Electric Industry Co., Ltd. | Serial data receiving circuit |
US5126808A (en) | 1989-10-23 | 1992-06-30 | Advanced Micro Devices, Inc. | Flash EEPROM array with paged erase architecture |
US5175819A (en) | 1990-03-28 | 1992-12-29 | Integrated Device Technology, Inc. | Cascadable parallel to serial converter using tap shift registers and data shift registers while receiving input data from FIFO buffer |
US5243703A (en) | 1990-04-18 | 1993-09-07 | Rambus, Inc. | Apparatus for synchronously generating clock signals in a data processing system |
US5430859A (en) | 1991-07-26 | 1995-07-04 | Sundisk Corporation | Solid state memory system including plural memory chips and a serialized bus |
US6230233B1 (en) | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
KR950000761B1 (ko) | 1992-01-15 | 1995-01-28 | 삼성전자 주식회사 | 직렬 입력신호의 동기회로 |
US5397726A (en) * | 1992-02-04 | 1995-03-14 | National Semiconductor Corporation | Segment-erasable flash EPROM |
JP3088180B2 (ja) | 1992-03-26 | 2000-09-18 | 日本電気アイシーマイコンシステム株式会社 | シリアル入力インタフェース回路 |
DE4311358C2 (de) * | 1992-04-07 | 1999-07-22 | Mitsubishi Electric Corp | Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung |
KR960000616B1 (ko) | 1993-01-13 | 1996-01-10 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 |
JPH06275069A (ja) | 1993-03-20 | 1994-09-30 | Hitachi Ltd | シリアルメモリ |
US5365484A (en) | 1993-08-23 | 1994-11-15 | Advanced Micro Devices, Inc. | Independent array grounds for flash EEPROM array with paged erase architechture |
JPH0793219A (ja) | 1993-09-20 | 1995-04-07 | Olympus Optical Co Ltd | 情報処理装置 |
US5602780A (en) | 1993-10-20 | 1997-02-11 | Texas Instruments Incorporated | Serial to parallel and parallel to serial architecture for a RAM based FIFO memory |
US5452259A (en) | 1993-11-15 | 1995-09-19 | Micron Technology Inc. | Multiport memory with pipelined serial input |
US5404460A (en) | 1994-01-28 | 1995-04-04 | Vlsi Technology, Inc. | Method for configuring multiple identical serial I/O devices to unique addresses through a serial bus |
US5596724A (en) | 1994-02-04 | 1997-01-21 | Advanced Micro Devices | Input/output data port with a parallel and serial interface |
DE4429433C1 (de) | 1994-08-19 | 1995-10-26 | Siemens Ag | Adreßzuordnungsverfahren |
US5473566A (en) | 1994-09-12 | 1995-12-05 | Cirrus Logic, Inc. | Memory architecture and devices, systems and methods utilizing the same |
KR0142367B1 (ko) | 1995-02-04 | 1998-07-15 | 김광호 | 열 리던던씨를 가지는 불휘발성 반도체 메모리의 소거 검증회로 |
US5636342A (en) | 1995-02-17 | 1997-06-03 | Dell Usa, L.P. | Systems and method for assigning unique addresses to agents on a system management bus |
US5729683A (en) | 1995-05-18 | 1998-03-17 | Compaq Computer Corporation | Programming memory devices through the parallel port of a computer system |
US5835935A (en) | 1995-09-13 | 1998-11-10 | Lexar Media, Inc. | Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory |
JP3693721B2 (ja) | 1995-11-10 | 2005-09-07 | Necエレクトロニクス株式会社 | フラッシュメモリ内蔵マイクロコンピュータ及びそのテスト方法 |
JP2838993B2 (ja) | 1995-11-29 | 1998-12-16 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
TW307869B (en) | 1995-12-20 | 1997-06-11 | Toshiba Co Ltd | Semiconductor memory |
KR100211760B1 (ko) | 1995-12-28 | 1999-08-02 | 윤종용 | 멀티뱅크 구조를 갖는 반도체 메모리 장치의 데이타 입출력 경로 제어회로 |
KR0170723B1 (ko) | 1995-12-29 | 1999-03-30 | 김광호 | 단일 ras 신호에 의해 동시 동작이 가능한 이중 뱅크를 갖는 반도체 메모리 장치 |
US5828899A (en) | 1996-01-04 | 1998-10-27 | Compaq Computer Corporation | System for peripheral devices recursively generating unique addresses based on the number of devices connected dependent upon the relative position to the port |
JPH09231740A (ja) | 1996-02-21 | 1997-09-05 | Nec Corp | 半導体記憶装置 |
WO1998010471A1 (en) * | 1996-09-05 | 1998-03-12 | Macronix International Co., Ltd. | Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes |
KR100187196B1 (ko) * | 1996-11-05 | 1999-03-20 | 김광호 | 불휘발성 반도체 메모리 장치 |
US5941974A (en) | 1996-11-29 | 1999-08-24 | Motorola, Inc. | Serial interface with register selection which uses clock counting, chip select pulsing, and no address bits |
KR100243335B1 (ko) | 1996-12-31 | 2000-02-01 | 김영환 | 독립적인 리프레쉬 수단을 가지는 데이지 체인 구조의 반도체 장치 |
KR100272037B1 (ko) | 1997-02-27 | 2000-12-01 | 니시무로 타이죠 | 불휘발성 반도체 기억 장치 |
GB2329792A (en) | 1997-08-20 | 1999-03-31 | Nokia Telecommunications Oy | Identification signals enable a transceiver module to correctly configure itself to an attached functional module |
JPH1166841A (ja) | 1997-08-22 | 1999-03-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100240873B1 (ko) | 1997-08-26 | 2000-01-15 | 윤종용 | 송수신 겸용의 레지스터를 갖는 직렬인터페이스장치 |
JP4039532B2 (ja) | 1997-10-02 | 2008-01-30 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US5937425A (en) | 1997-10-16 | 1999-08-10 | M-Systems Flash Disk Pioneers Ltd. | Flash file system optimized for page-mode flash technologies |
US6148364A (en) | 1997-12-30 | 2000-11-14 | Netlogic Microsystems, Inc. | Method and apparatus for cascading content addressable memory devices |
US6002638A (en) | 1998-01-20 | 1999-12-14 | Microchip Technology Incorporated | Memory device having a switchable clock output and method therefor |
JPH11224495A (ja) * | 1998-02-05 | 1999-08-17 | Hitachi Ltd | 半導体集積回路装置 |
US6453365B1 (en) | 1998-02-11 | 2002-09-17 | Globespanvirata, Inc. | Direct memory access controller having decode circuit for compact instruction format |
DE19980546B4 (de) | 1998-03-02 | 2011-01-27 | Lexar Media, Inc., Fremont | Flash-Speicherkarte mit erweiterter Betriebsmodus-Erkennung und benutzerfreundlichem Schnittstellensystem |
US6085290A (en) | 1998-03-10 | 2000-07-04 | Nexabit Networks, Llc | Method of and apparatus for validating data read out of a multi port internally cached dynamic random access memory (AMPIC DRAM) |
US6144576A (en) | 1998-08-19 | 2000-11-07 | Intel Corporation | Method and apparatus for implementing a serial memory architecture |
US7182431B2 (en) * | 1999-10-19 | 2007-02-27 | Silverbrook Research Pty Ltd | Nozzle arrangement |
US5995417A (en) | 1998-10-20 | 1999-11-30 | Advanced Micro Devices, Inc. | Scheme for page erase and erase verify in a non-volatile memory array |
JP4601737B2 (ja) | 1998-10-28 | 2010-12-22 | 株式会社東芝 | メモリ混載ロジックlsi |
JP2000149564A (ja) | 1998-10-30 | 2000-05-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6304921B1 (en) | 1998-12-07 | 2001-10-16 | Motorola Inc. | System for serial peripheral interface with embedded addressing circuit for providing portion of an address for peripheral devices |
KR100284742B1 (ko) | 1998-12-28 | 2001-04-02 | 윤종용 | 입출력 센스앰프의 개수가 최소화된 메모리장치 |
JP3940513B2 (ja) * | 1999-01-11 | 2007-07-04 | 株式会社東芝 | 半導体記憶装置 |
CA2414702C (en) * | 1999-06-30 | 2008-02-05 | Silverbrook Research Pty Ltd | Printhead support structure and assembly |
KR100373670B1 (ko) * | 1999-09-27 | 2003-02-26 | 가부시끼가이샤 도시바 | 불휘발성 반도체 기억 장치 |
US6680904B1 (en) | 1999-12-27 | 2004-01-20 | Orckit Communications Ltd. | Bi-directional chaining of network access ports |
US20050160218A1 (en) | 2004-01-20 | 2005-07-21 | Sun-Teck See | Highly integrated mass storage device with an intelligent flash controller |
US6442098B1 (en) | 2000-02-08 | 2002-08-27 | Alliance Semiconductor | High performance multi-bank compact synchronous DRAM architecture |
AU2001243463A1 (en) | 2000-03-10 | 2001-09-24 | Arc International Plc | Memory interface and method of interfacing between functional entities |
US6816933B1 (en) | 2000-05-17 | 2004-11-09 | Silicon Laboratories, Inc. | Serial device daisy chaining method and apparatus |
US6535948B1 (en) | 2000-05-31 | 2003-03-18 | Agere Systems Inc. | Serial interface unit |
US6317350B1 (en) | 2000-06-16 | 2001-11-13 | Netlogic Microsystems, Inc. | Hierarchical depth cascading of content addressable memory devices |
US6754807B1 (en) | 2000-08-31 | 2004-06-22 | Stmicroelectronics, Inc. | System and method for managing vertical dependencies in a digital signal processor |
US6317352B1 (en) | 2000-09-18 | 2001-11-13 | Intel Corporation | Apparatus for implementing a buffered daisy chain connection between a memory controller and memory modules |
US6853557B1 (en) | 2000-09-20 | 2005-02-08 | Rambus, Inc. | Multi-channel memory architecture |
FR2816751A1 (fr) | 2000-11-15 | 2002-05-17 | St Microelectronics Sa | Memoire flash effacable par page |
AUPR399601A0 (en) * | 2001-03-27 | 2001-04-26 | Silverbrook Research Pty. Ltd. | An apparatus and method(ART108) |
AUPR399101A0 (en) * | 2001-03-27 | 2001-04-26 | Silverbrook Research Pty. Ltd. | An apparatus and method(ART105) |
US20020161941A1 (en) | 2001-04-30 | 2002-10-31 | Sony Corporation And Electronics, Inc | System and method for efficiently performing a data transfer operation |
US6532172B2 (en) * | 2001-05-31 | 2003-03-11 | Sandisk Corporation | Steering gate and bit line segmentation in non-volatile memories |
US6732221B2 (en) | 2001-06-01 | 2004-05-04 | M-Systems Flash Disk Pioneers Ltd | Wear leveling of static areas in flash memory |
US6996644B2 (en) | 2001-06-06 | 2006-02-07 | Conexant Systems, Inc. | Apparatus and methods for initializing integrated circuit addresses |
KR100413762B1 (ko) | 2001-07-02 | 2003-12-31 | 삼성전자주식회사 | 뱅크 수를 가변할 수 있는 반도체 장치 및 그 방법 |
US6717847B2 (en) | 2001-09-17 | 2004-04-06 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
US6456528B1 (en) | 2001-09-17 | 2002-09-24 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
US6928501B2 (en) | 2001-10-15 | 2005-08-09 | Silicon Laboratories, Inc. | Serial device daisy chaining method and apparatus |
US6807106B2 (en) | 2001-12-14 | 2004-10-19 | Sandisk Corporation | Hybrid density memory card |
US6763426B1 (en) | 2001-12-27 | 2004-07-13 | Cypress Semiconductor Corporation | Cascadable content addressable memory (CAM) device and architecture |
JP2003331585A (ja) | 2002-05-08 | 2003-11-21 | Toshiba Corp | 不揮発性半導体記憶装置 |
US7073022B2 (en) | 2002-05-23 | 2006-07-04 | International Business Machines Corporation | Serial interface for a data storage array |
EP1376698A1 (en) | 2002-06-25 | 2004-01-02 | STMicroelectronics S.r.l. | Electrically erasable and programable non-volatile memory cell |
US7062601B2 (en) | 2002-06-28 | 2006-06-13 | Mosaid Technologies Incorporated | Method and apparatus for interconnecting content addressable memory devices |
US7064978B2 (en) * | 2002-07-05 | 2006-06-20 | Aplus Flash Technology, Inc. | Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
KR100499686B1 (ko) | 2002-07-23 | 2005-07-07 | 주식회사 디지털웨이 | 메모리 확장 가능한 휴대용 플래쉬 메모리 장치 |
CA2396632A1 (en) | 2002-07-31 | 2004-01-31 | Mosaid Technologies Incorporated | Cam diamond cascade architecture |
KR100487539B1 (ko) | 2002-09-02 | 2005-05-03 | 삼성전자주식회사 | 직렬 에이티에이 케이블과 연결되는 불휘발성 반도체메모리 장치 |
JP3845051B2 (ja) * | 2002-09-11 | 2006-11-15 | 株式会社東芝 | 不揮発性半導体メモリ |
DE60229649D1 (de) | 2002-11-28 | 2008-12-11 | St Microelectronics Srl | Nichtflüchtige Speicheranordnungsarchitektur, zum Beispiel vom Flash-Typ mit einer seriellen Übertragungsschnittstelle |
KR100493884B1 (ko) | 2003-01-09 | 2005-06-10 | 삼성전자주식회사 | 시리얼 플래시 메모리에서의 현지 실행을 위한 제어 장치및 그 방법, 이를 이용한 플래시 메모리 칩 |
US20040199721A1 (en) | 2003-03-12 | 2004-10-07 | Power Data Communication Co., Ltd. | Multi-transmission interface memory card |
JP4156986B2 (ja) | 2003-06-30 | 2008-09-24 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7175265B2 (en) * | 2003-08-28 | 2007-02-13 | Seiko Epson Corporation | Holding apparatus to hold flexible beltlike member forming ink channel, and recording apparatus |
US6870772B1 (en) * | 2003-09-12 | 2005-03-22 | Renesas Technology Corp. | Nonvolatile semiconductor memory device |
US7075140B2 (en) * | 2003-11-26 | 2006-07-11 | Gregorio Spadea | Low voltage EEPROM memory arrays |
DE102004021245B4 (de) * | 2004-04-30 | 2006-10-12 | Airbus Deutschland Gmbh | Abstandshalter (Spacer) für koaxial ummantelte Kraftstoffrohre |
KR100604561B1 (ko) * | 2004-05-11 | 2006-07-31 | 에스티마이크로일렉트로닉스 엔.브이. | 낸드 플래시 메모리 소자 및 이의 웰 형성 방법 |
JP4342383B2 (ja) * | 2004-06-22 | 2009-10-14 | 株式会社東芝 | 半導体記憶装置 |
KR100705221B1 (ko) | 2004-09-03 | 2007-04-06 | 에스티마이크로일렉트로닉스 엔.브이. | 플래쉬 메모리 소자 및 이를 이용한 플래쉬 메모리 셀의소거 방법 |
US6950325B1 (en) | 2004-10-07 | 2005-09-27 | Winbond Electronics Corporation | Cascade-connected ROM |
JP4519612B2 (ja) | 2004-11-16 | 2010-08-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7151697B2 (en) | 2004-11-30 | 2006-12-19 | Infineon Technologies Ag | Non-volatile semiconductor memory |
JP2006196700A (ja) | 2005-01-13 | 2006-07-27 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2007102848A (ja) | 2005-09-30 | 2007-04-19 | Toshiba Corp | 半導体集積回路装置 |
JP4791806B2 (ja) | 2005-11-21 | 2011-10-12 | 株式会社東芝 | 半導体記憶装置及びそのデータ書き込み方法 |
US7441864B2 (en) * | 2005-12-05 | 2008-10-28 | Silverbrook Research Pty Ltd | Method of maintaining a printhead using a maintenance belt with cleaning station |
US7313029B2 (en) * | 2006-04-07 | 2007-12-25 | Skymedi Corporation | Method for erasing flash memories and related system thereof |
JP2007310936A (ja) | 2006-05-17 | 2007-11-29 | Toshiba Corp | 半導体記憶装置 |
KR100744139B1 (ko) | 2006-06-28 | 2007-08-01 | 삼성전자주식회사 | 단일 게이트 구조를 가지는 eeprom 및 그 동작 방법 |
KR101402084B1 (ko) * | 2007-01-16 | 2014-06-09 | 삼성전자주식회사 | 잉크 공급유닛과 프린트헤드 조립체 및 화상형성장치 |
KR20080068260A (ko) * | 2007-01-18 | 2008-07-23 | 삼성전자주식회사 | 잉크젯 프린터 및 잉크젯 프린터 헤드칩 조립체 |
JP4398986B2 (ja) | 2007-03-12 | 2010-01-13 | 株式会社東芝 | 電圧バイアス回路 |
US8297745B2 (en) * | 2007-11-30 | 2012-10-30 | Samsung Electronics Co., Ltd. | Image forming apparatus |
US7940572B2 (en) * | 2008-01-07 | 2011-05-10 | Mosaid Technologies Incorporated | NAND flash memory having multiple cell substrates |
-
2008
- 2008-06-20 US US12/143,285 patent/US7940572B2/en active Active
- 2008-12-23 EP EP08869440A patent/EP2238597A4/en not_active Withdrawn
- 2008-12-23 JP JP2010540995A patent/JP5420567B2/ja not_active Expired - Fee Related
- 2008-12-23 CN CN200880113731A patent/CN101842849A/zh active Pending
- 2008-12-23 WO PCT/CA2008/002287 patent/WO2009086618A1/en active Application Filing
- 2008-12-23 CA CA2701625A patent/CA2701625A1/en not_active Abandoned
- 2008-12-23 KR KR1020107009122A patent/KR20100110766A/ko active IP Right Grant
- 2008-12-23 KR KR1020137030281A patent/KR20130133088A/ko not_active Application Discontinuation
- 2008-12-24 TW TW097150430A patent/TWI446524B/zh not_active IP Right Cessation
- 2008-12-24 TW TW103115943A patent/TW201432887A/zh unknown
-
2011
- 2011-03-28 US US13/073,150 patent/US8582372B2/en active Active
-
2013
- 2013-09-20 US US14/032,816 patent/US9070461B2/en active Active
- 2013-11-19 JP JP2013238531A patent/JP2014032738A/ja active Pending
-
2015
- 2015-06-29 US US14/753,500 patent/US9583204B2/en active Active
-
2017
- 2017-01-20 US US15/411,138 patent/US9899096B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09162373A (ja) * | 1995-12-04 | 1997-06-20 | Hitachi Ltd | 不揮発性記憶装置 |
JPH11339487A (ja) * | 1998-05-22 | 1999-12-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2000030473A (ja) * | 1998-07-14 | 2000-01-28 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2001210808A (ja) * | 2000-01-27 | 2001-08-03 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324440B2 (en) | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
JP2011165308A (ja) * | 2010-02-09 | 2011-08-25 | Samsung Electronics Co Ltd | 不揮発性メモリ装置およびその動作方法と、それを含むメモリシステム |
US10217516B2 (en) | 2010-02-09 | 2019-02-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
KR101658479B1 (ko) | 2010-02-09 | 2016-09-21 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US9378833B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US8917558B2 (en) | 2010-02-09 | 2014-12-23 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9378831B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
KR20110092523A (ko) * | 2010-02-09 | 2011-08-18 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US9330769B2 (en) | 2010-02-09 | 2016-05-03 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US8923053B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof, and memory system including the same |
US9390803B2 (en) | 2010-02-17 | 2016-07-12 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US8964476B2 (en) | 2010-02-17 | 2015-02-24 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US9147492B2 (en) | 2010-02-17 | 2015-09-29 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
US9330770B2 (en) | 2010-02-17 | 2016-05-03 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US8923060B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and operating methods thereof |
US8908431B2 (en) | 2010-02-17 | 2014-12-09 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
US10199116B2 (en) | 2010-02-17 | 2019-02-05 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US11715537B2 (en) | 2010-02-17 | 2023-08-01 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US11062784B2 (en) | 2010-02-17 | 2021-07-13 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US10650903B2 (en) | 2010-02-17 | 2020-05-12 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US9747995B2 (en) | 2010-02-17 | 2017-08-29 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US8929145B2 (en) | 2010-02-18 | 2015-01-06 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, programming method thereof and memory system including the same |
US8792282B2 (en) | 2010-03-04 | 2014-07-29 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, memory systems and computing systems |
US9947416B2 (en) | 2010-08-26 | 2018-04-17 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof and memory system including the same |
US9881685B2 (en) | 2010-08-26 | 2018-01-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof and memory system including the same |
JP2014170599A (ja) * | 2013-03-01 | 2014-09-18 | Toshiba Corp | 半導体記憶装置 |
US9741438B2 (en) | 2013-09-16 | 2017-08-22 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and program method thereof |
KR101736455B1 (ko) | 2016-09-06 | 2017-05-17 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
Also Published As
Publication number | Publication date |
---|---|
EP2238597A1 (en) | 2010-10-13 |
US9070461B2 (en) | 2015-06-30 |
KR20130133088A (ko) | 2013-12-05 |
JP2014032738A (ja) | 2014-02-20 |
US20090175081A1 (en) | 2009-07-09 |
US20170229188A1 (en) | 2017-08-10 |
WO2009086618A8 (en) | 2010-01-21 |
US7940572B2 (en) | 2011-05-10 |
TW200945563A (en) | 2009-11-01 |
US20140022846A1 (en) | 2014-01-23 |
TWI446524B (zh) | 2014-07-21 |
US20150364207A1 (en) | 2015-12-17 |
TW201432887A (zh) | 2014-08-16 |
US9583204B2 (en) | 2017-02-28 |
US8582372B2 (en) | 2013-11-12 |
US20110170352A1 (en) | 2011-07-14 |
EP2238597A4 (en) | 2011-05-11 |
CA2701625A1 (en) | 2009-07-16 |
KR20100110766A (ko) | 2010-10-13 |
US9899096B2 (en) | 2018-02-20 |
WO2009086618A1 (en) | 2009-07-16 |
CN101842849A (zh) | 2010-09-22 |
JP5420567B2 (ja) | 2014-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5420567B2 (ja) | 複数セル基板を有するnandフラッシュメモリ | |
US10998048B2 (en) | Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices | |
US8072814B2 (en) | NAND with back biased operation | |
US9007834B2 (en) | Nonvolatile memory with split substrate select gates and hierarchical bitline configuration | |
US10269409B2 (en) | Non-volatile semiconductor memory device and driving method for block selection by boosting thereof | |
JP4761872B2 (ja) | 不揮発性半導体記憶装置 | |
US8331160B2 (en) | Memory device having improved programming operation | |
JP2004030866A (ja) | 不揮発性メモリのプログラム妨害および読み出し妨害を低減するための処理技法 | |
TW200947443A (en) | Hierarchical common source line structure in NAND flash memory | |
US8717816B2 (en) | Semiconductor memory device | |
CN110853692A (zh) | 存储器装置在编程期间的操作 | |
KR20080062702A (ko) | 셀프-부스팅을 이용한 낸드 플래시 메모리소자의 프로그램방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111214 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130208 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130219 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20130220 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20130226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130513 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130723 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130806 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131029 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131120 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |