JP2011181908A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011181908A
JP2011181908A JP2011017923A JP2011017923A JP2011181908A JP 2011181908 A JP2011181908 A JP 2011181908A JP 2011017923 A JP2011017923 A JP 2011017923A JP 2011017923 A JP2011017923 A JP 2011017923A JP 2011181908 A JP2011181908 A JP 2011181908A
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JP
Japan
Prior art keywords
transistor
electrode
source
insulating layer
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011017923A
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English (en)
Japanese (ja)
Other versions
JP2011181908A5 (enExample
Inventor
Kiyoshi Kato
清 加藤
Shuhei Nagatsuka
修平 長塚
Hiroki Inoue
広樹 井上
Takanori Matsuzaki
隆徳 松嵜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011017923A priority Critical patent/JP2011181908A/ja
Publication of JP2011181908A publication Critical patent/JP2011181908A/ja
Publication of JP2011181908A5 publication Critical patent/JP2011181908A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011017923A 2010-02-05 2011-01-31 半導体装置 Withdrawn JP2011181908A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011017923A JP2011181908A (ja) 2010-02-05 2011-01-31 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010024579 2010-02-05
JP2010024579 2010-02-05
JP2011017923A JP2011181908A (ja) 2010-02-05 2011-01-31 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013121397A Division JP5668100B2 (ja) 2010-02-05 2013-06-10 半導体装置

Publications (2)

Publication Number Publication Date
JP2011181908A true JP2011181908A (ja) 2011-09-15
JP2011181908A5 JP2011181908A5 (enExample) 2012-09-13

Family

ID=44355276

Family Applications (14)

Application Number Title Priority Date Filing Date
JP2011017923A Withdrawn JP2011181908A (ja) 2010-02-05 2011-01-31 半導体装置
JP2013121397A Expired - Fee Related JP5668100B2 (ja) 2010-02-05 2013-06-10 半導体装置
JP2014010475A Withdrawn JP2014132663A (ja) 2010-02-05 2014-01-23 半導体装置
JP2014252709A Withdrawn JP2015111678A (ja) 2010-02-05 2014-12-15 半導体装置
JP2016003179A Withdrawn JP2016122845A (ja) 2010-02-05 2016-01-12 半導体装置
JP2017130124A Expired - Fee Related JP6585124B2 (ja) 2010-02-05 2017-07-03 半導体装置の作製方法
JP2019161419A Active JP6792037B2 (ja) 2010-02-05 2019-09-04 半導体装置の作製方法
JP2020185328A Active JP7027506B2 (ja) 2010-02-05 2020-11-05 半導体装置
JP2022022174A Active JP7238181B2 (ja) 2010-02-05 2022-02-16 半導体装置
JP2023030772A Active JP7497481B2 (ja) 2010-02-05 2023-03-01 半導体装置
JP2023119011A Active JP7583125B2 (ja) 2010-02-05 2023-07-21 半導体装置
JP2024086921A Active JP7529934B1 (ja) 2010-02-05 2024-05-29 半導体装置
JP2024119234A Active JP7683098B2 (ja) 2010-02-05 2024-07-25 半導体装置
JP2025081003A Pending JP2025114808A (ja) 2010-02-05 2025-05-14 半導体装置

Family Applications After (13)

Application Number Title Priority Date Filing Date
JP2013121397A Expired - Fee Related JP5668100B2 (ja) 2010-02-05 2013-06-10 半導体装置
JP2014010475A Withdrawn JP2014132663A (ja) 2010-02-05 2014-01-23 半導体装置
JP2014252709A Withdrawn JP2015111678A (ja) 2010-02-05 2014-12-15 半導体装置
JP2016003179A Withdrawn JP2016122845A (ja) 2010-02-05 2016-01-12 半導体装置
JP2017130124A Expired - Fee Related JP6585124B2 (ja) 2010-02-05 2017-07-03 半導体装置の作製方法
JP2019161419A Active JP6792037B2 (ja) 2010-02-05 2019-09-04 半導体装置の作製方法
JP2020185328A Active JP7027506B2 (ja) 2010-02-05 2020-11-05 半導体装置
JP2022022174A Active JP7238181B2 (ja) 2010-02-05 2022-02-16 半導体装置
JP2023030772A Active JP7497481B2 (ja) 2010-02-05 2023-03-01 半導体装置
JP2023119011A Active JP7583125B2 (ja) 2010-02-05 2023-07-21 半導体装置
JP2024086921A Active JP7529934B1 (ja) 2010-02-05 2024-05-29 半導体装置
JP2024119234A Active JP7683098B2 (ja) 2010-02-05 2024-07-25 半導体装置
JP2025081003A Pending JP2025114808A (ja) 2010-02-05 2025-05-14 半導体装置

Country Status (6)

Country Link
US (2) US9190413B2 (enExample)
JP (14) JP2011181908A (enExample)
KR (1) KR101822962B1 (enExample)
CN (1) CN102725842B (enExample)
TW (3) TWI587484B (enExample)
WO (1) WO2011096270A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013137853A (ja) * 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
JP2021100127A (ja) * 2011-09-22 2021-07-01 株式会社半導体エネルギー研究所 半導体装置
JP2022068260A (ja) * 2014-09-19 2022-05-09 株式会社半導体エネルギー研究所 半導体装置
WO2024194726A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101913111B1 (ko) 2009-12-18 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101862823B1 (ko) 2010-02-05 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101822962B1 (ko) * 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011096262A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114867A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9658278B2 (en) * 2014-01-24 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for high voltage device crystal defect detection
CN108140657A (zh) * 2015-09-30 2018-06-08 株式会社半导体能源研究所 半导体装置及电子设备
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
TWI694580B (zh) * 2016-11-18 2020-05-21 聯華電子股份有限公司 電晶體堆疊結構
CN110178170B (zh) * 2017-01-16 2021-12-07 株式会社半导体能源研究所 显示装置
JP2020145233A (ja) * 2019-03-04 2020-09-10 キオクシア株式会社 半導体装置およびその製造方法
JP2022190984A (ja) * 2021-06-15 2022-12-27 キオクシア株式会社 半導体装置およびその製造方法
CN116209249B (zh) * 2022-08-08 2024-02-20 北京超弦存储器研究院 动态存储器、其制作方法、读取方法及存储装置

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JP2021100127A (ja) * 2011-09-22 2021-07-01 株式会社半導体エネルギー研究所 半導体装置
JP7038238B2 (ja) 2011-09-22 2022-03-17 株式会社半導体エネルギー研究所 半導体装置
JP2022066445A (ja) * 2011-09-22 2022-04-28 株式会社半導体エネルギー研究所 半導体装置
JP7285352B2 (ja) 2011-09-22 2023-06-01 株式会社半導体エネルギー研究所 半導体装置
JP2023104977A (ja) * 2011-09-22 2023-07-28 株式会社半導体エネルギー研究所 半導体装置
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