JP2011029636A - 銅柱バンプ上の金属間化合物の接合のための方法と構造 - Google Patents

銅柱バンプ上の金属間化合物の接合のための方法と構造 Download PDF

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JP2011029636A
JP2011029636A JP2010151626A JP2010151626A JP2011029636A JP 2011029636 A JP2011029636 A JP 2011029636A JP 2010151626 A JP2010151626 A JP 2010151626A JP 2010151626 A JP2010151626 A JP 2010151626A JP 2011029636 A JP2011029636 A JP 2011029636A
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copper
layer
diffusion barrier
barrier layer
intermetallic compound
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JP2011029636A5 (cg-RX-API-DMAC7.html
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Toshinari Hayashi
俊成 林
Chen-Hua Yu
振華 余
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • Y10T428/24612—Composite web or sheet

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JP7684773B2 (ja) 2020-11-24 2025-05-28 インターナショナル・ビジネス・マシーンズ・コーポレーション はんだ接合用アンダーバンプ冶金の保護表面層
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TW201123325A (en) 2011-07-01
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US8592995B2 (en) 2013-11-26
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CN101944496B (zh) 2014-10-15
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