JP2009503815A - 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法 - Google Patents

窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法 Download PDF

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Publication number
JP2009503815A
JP2009503815A JP2008522820A JP2008522820A JP2009503815A JP 2009503815 A JP2009503815 A JP 2009503815A JP 2008522820 A JP2008522820 A JP 2008522820A JP 2008522820 A JP2008522820 A JP 2008522820A JP 2009503815 A JP2009503815 A JP 2009503815A
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Prior art keywords
layer
etch stop
gate
stop layer
nitride
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Pending
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Japanese (ja)
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JP2009503815A5 (https=
Inventor
ティー．シェパード スコット
ケー．マッケンジー アンドリュー
ティー．アレン スコット
ピー．スミス リチャード
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008522820A 2005-07-20 2006-07-12 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法 Pending JP2009503815A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/185,398 US20070018199A1 (en) 2005-07-20 2005-07-20 Nitride-based transistors and fabrication methods with an etch stop layer
PCT/US2006/026952 WO2007018918A2 (en) 2005-07-20 2006-07-12 Nitride-based transistors and fabrication methods with an etch stop layer

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JP2013147350A Division JP2014003301A (ja) 2005-07-20 2013-07-16 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法

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JP2009503815A true JP2009503815A (ja) 2009-01-29
JP2009503815A5 JP2009503815A5 (https=) 2012-02-16

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JP2013147350A Pending JP2014003301A (ja) 2005-07-20 2013-07-16 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法

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US (2) US20070018199A1 (https=)
EP (2) EP2479790B1 (https=)
JP (2) JP2009503815A (https=)
WO (1) WO2007018918A2 (https=)

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JP2010147347A (ja) * 2008-12-19 2010-07-01 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2010258313A (ja) * 2009-04-28 2010-11-11 Nichia Corp 電界効果トランジスタ及びその製造方法
JP2011082216A (ja) * 2009-10-02 2011-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011124246A (ja) * 2009-12-08 2011-06-23 Mitsubishi Electric Corp ヘテロ接合電界効果型トランジスタ及びその製造方法
JP2012119638A (ja) * 2010-12-03 2012-06-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2012231106A (ja) * 2011-04-25 2012-11-22 Samsung Electro-Mechanics Co Ltd 窒化物半導体素子及びその製造方法
JP2013503483A (ja) * 2009-08-28 2013-01-31 トランスフォーム インコーポレーテッド フィールドプレートを有する半導体デバイス
JP2013503467A (ja) * 2009-08-26 2013-01-31 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ トランジスタ構造の決定方法
JP2013125918A (ja) * 2011-12-16 2013-06-24 Sumitomo Electric Ind Ltd 半導体装置
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US20130252386A1 (en) 2013-09-26
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