JP2009212509A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP2009212509A
JP2009212509A JP2009026277A JP2009026277A JP2009212509A JP 2009212509 A JP2009212509 A JP 2009212509A JP 2009026277 A JP2009026277 A JP 2009026277A JP 2009026277 A JP2009026277 A JP 2009026277A JP 2009212509 A JP2009212509 A JP 2009212509A
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insulating film
film
semiconductor
semiconductor layer
substrate
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JP2009212509A5 (https=
Inventor
Mitsuhiro Ichijo
充弘 一條
Kenichi Okazaki
健一 岡崎
Tetsuhiro Tanaka
哲弘 田中
Takashi Otsuki
高志 大槻
Kiyoharu Yasumoto
清治 保本
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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  • Chemical & Material Sciences (AREA)
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  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
JP2009026277A 2008-02-08 2009-02-06 半導体装置の作製方法 Withdrawn JP2009212509A (ja)

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JP2017175127A (ja) * 2016-03-16 2017-09-28 株式会社半導体エネルギー研究所 剥離方法
US10189048B2 (en) 2013-12-12 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus

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