JP2009177158A5 - - Google Patents
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- Publication number
- JP2009177158A5 JP2009177158A5 JP2008326712A JP2008326712A JP2009177158A5 JP 2009177158 A5 JP2009177158 A5 JP 2009177158A5 JP 2008326712 A JP2008326712 A JP 2008326712A JP 2008326712 A JP2008326712 A JP 2008326712A JP 2009177158 A5 JP2009177158 A5 JP 2009177158A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- layer
- photoelectric conversion
- conversion device
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 22
- 238000006243 chemical reaction Methods 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 8
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 150000002894 organic compounds Chemical class 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 2
- -1 aromatic amine compound Chemical class 0.000 claims 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 2
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 claims 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 229910003449 rhenium oxide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000003776 cleavage reaction Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000007017 scission Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008326712A JP5289927B2 (ja) | 2007-12-28 | 2008-12-23 | 光電変換装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007340320 | 2007-12-28 | ||
| JP2007340320 | 2007-12-28 | ||
| JP2008326712A JP5289927B2 (ja) | 2007-12-28 | 2008-12-23 | 光電変換装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009177158A JP2009177158A (ja) | 2009-08-06 |
| JP2009177158A5 true JP2009177158A5 (https=) | 2012-01-26 |
| JP5289927B2 JP5289927B2 (ja) | 2013-09-11 |
Family
ID=40512442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008326712A Expired - Fee Related JP5289927B2 (ja) | 2007-12-28 | 2008-12-23 | 光電変換装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090165854A1 (https=) |
| EP (1) | EP2075850A3 (https=) |
| JP (1) | JP5289927B2 (https=) |
| KR (1) | KR101558911B1 (https=) |
Families Citing this family (52)
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| US8304302B2 (en) * | 2009-04-03 | 2012-11-06 | Board Of Trustees Of The University Of Arkansas | Photovoltaic device using single wall carbon nanotubes and method of fabricating the same |
| EP2256839B1 (en) * | 2009-05-28 | 2019-03-27 | IMEC vzw | Single junction or a multijunction photovoltaic cells and method for their fabrication |
| JP2011009205A (ja) * | 2009-05-29 | 2011-01-13 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置及びその作製方法 |
| CN102449800A (zh) * | 2009-05-29 | 2012-05-09 | 株式会社半导体能源研究所 | 发光元件、发光装置、照明装置以及电子设备 |
| US8525407B2 (en) * | 2009-06-24 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Light source and device having the same |
| US8169137B2 (en) * | 2009-07-14 | 2012-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light source and device using electroluminescence element |
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-
2008
- 2008-12-11 EP EP08021559A patent/EP2075850A3/en not_active Withdrawn
- 2008-12-23 JP JP2008326712A patent/JP5289927B2/ja not_active Expired - Fee Related
- 2008-12-23 US US12/343,011 patent/US20090165854A1/en not_active Abandoned
- 2008-12-24 KR KR1020080133120A patent/KR101558911B1/ko not_active Expired - Fee Related
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