KR101558911B1 - 광전 변환 장치 및 그 제조 방법 - Google Patents

광전 변환 장치 및 그 제조 방법 Download PDF

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Publication number
KR101558911B1
KR101558911B1 KR1020080133120A KR20080133120A KR101558911B1 KR 101558911 B1 KR101558911 B1 KR 101558911B1 KR 1020080133120 A KR1020080133120 A KR 1020080133120A KR 20080133120 A KR20080133120 A KR 20080133120A KR 101558911 B1 KR101558911 B1 KR 101558911B1
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layer
single crystal
semiconductor layer
oxide
unit cell
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KR20090073002A (ko
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순페이 야마자키
히사오 이케다
사토시 세오
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020080133120A 2007-12-28 2008-12-24 광전 변환 장치 및 그 제조 방법 Expired - Fee Related KR101558911B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2007-340320 2007-12-28
JP2007340320 2007-12-28

Publications (2)

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KR20090073002A KR20090073002A (ko) 2009-07-02
KR101558911B1 true KR101558911B1 (ko) 2015-10-08

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Country Status (4)

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US (1) US20090165854A1 (https=)
EP (1) EP2075850A3 (https=)
JP (1) JP5289927B2 (https=)
KR (1) KR101558911B1 (https=)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5438986B2 (ja) * 2008-02-19 2014-03-12 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8304302B2 (en) * 2009-04-03 2012-11-06 Board Of Trustees Of The University Of Arkansas Photovoltaic device using single wall carbon nanotubes and method of fabricating the same
EP2256839B1 (en) * 2009-05-28 2019-03-27 IMEC vzw Single junction or a multijunction photovoltaic cells and method for their fabrication
JP2011009205A (ja) * 2009-05-29 2011-01-13 Semiconductor Energy Lab Co Ltd 発光素子、発光装置及びその作製方法
CN102449800A (zh) * 2009-05-29 2012-05-09 株式会社半导体能源研究所 发光元件、发光装置、照明装置以及电子设备
US8525407B2 (en) * 2009-06-24 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Light source and device having the same
US8169137B2 (en) * 2009-07-14 2012-05-01 Semiconductor Energy Laboratory Co., Ltd. Light source and device using electroluminescence element
JP5295059B2 (ja) * 2009-09-25 2013-09-18 三菱電機株式会社 光電変換装置とその製造方法
JP2011139044A (ja) 2009-12-01 2011-07-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
US8350236B2 (en) * 2010-01-12 2013-01-08 Axcelis Technologies, Inc. Aromatic molecular carbon implantation processes
KR101036213B1 (ko) * 2010-01-26 2011-05-20 광주과학기술원 발광소자와 태양전지 성능을 포함하는 전자소자
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US8614495B2 (en) 2010-04-23 2013-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Back side defect reduction for back side illuminated image sensor
JP2011233692A (ja) * 2010-04-27 2011-11-17 Idemitsu Kosan Co Ltd 光電変換素子、有機太陽電池及びそれらを用いた光電変換装置
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8975509B2 (en) * 2010-06-07 2015-03-10 The Governing Council Of The University Of Toronto Photovoltaic devices with multiple junctions separated by a graded recombination layer
JP5753445B2 (ja) 2010-06-18 2015-07-22 株式会社半導体エネルギー研究所 光電変換装置
KR101117127B1 (ko) * 2010-08-06 2012-02-24 한국과학기술연구원 비정질 실리콘 태양전지와 유기 태양전지를 이용한 탠덤형 태양전지
WO2012018649A2 (en) * 2010-08-06 2012-02-09 Spectrawatt, Inc. Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein
WO2012046560A1 (en) 2010-10-04 2012-04-12 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, and lighting device
DE102010043006A1 (de) * 2010-10-27 2012-05-03 Solarworld Innovations Gmbh Photovoltaisches Bauelement
JP5912404B2 (ja) 2010-10-29 2016-04-27 株式会社半導体エネルギー研究所 光電変換装置
US8557614B2 (en) * 2010-12-28 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing lighting device
JP2012182443A (ja) 2011-02-11 2012-09-20 Semiconductor Energy Lab Co Ltd 発光素子及び発光装置
KR20120095790A (ko) * 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치
US20120211065A1 (en) * 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US20120234392A1 (en) * 2011-03-17 2012-09-20 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
TWI602334B (zh) 2011-05-13 2017-10-11 半導體能源研究所股份有限公司 發光元件及發光裝置
US9159939B2 (en) 2011-07-21 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP2013058562A (ja) * 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
KR101326538B1 (ko) * 2012-01-03 2013-11-08 한국기계연구원 이중 버퍼층을 포함하는 박막형 태양전지
KR101326539B1 (ko) * 2012-01-03 2013-11-08 한국기계연구원 Ｗｏ3 버퍼층을 포함하는 박막형 태양전지
JP6108858B2 (ja) 2012-02-17 2017-04-05 株式会社半導体エネルギー研究所 ｐ型半導体材料および半導体装置
KR101832230B1 (ko) 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
WO2013141328A1 (ja) * 2012-03-22 2013-09-26 住友化学株式会社 有機無機ハイブリッド光電変換素子
KR101458566B1 (ko) * 2013-05-21 2014-11-07 재단법인대구경북과학기술원 정류소자 및 그의 제조 방법
US9484537B2 (en) 2013-08-28 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Organic photo diode with dual electron blocking layers
KR101518594B1 (ko) 2013-10-18 2015-05-07 서울시립대학교 산학협력단 유기박막 태양전지
CN104716261A (zh) * 2013-12-13 2015-06-17 中国科学院大连化学物理研究所 一种吸收光谱互补的硅薄膜/有机叠层薄膜太阳能电池
US10749118B2 (en) 2014-06-26 2020-08-18 Samsung Display Co., Ltd. Heterocyclic compound and organic light-emitting device including the same
KR102307061B1 (ko) * 2014-08-05 2021-10-05 삼성전자주식회사 반도체 소자의 커패시터 제조 방법
WO2016086192A1 (en) * 2014-11-26 2016-06-02 Kateeva, Inc. Environmentally controlled coating systems
WO2016123363A1 (en) * 2015-01-28 2016-08-04 The Regents Of The University Of California Tandem organic-inorganic photovoltaic devices
US20170179199A1 (en) * 2015-12-18 2017-06-22 Dpix, Llc Method of screen printing in manufacturing an image sensor device
JP2016106437A (ja) * 2016-03-17 2016-06-16 株式会社半導体エネルギー研究所 光電変換装置
US10629577B2 (en) 2017-03-16 2020-04-21 Invensas Corporation Direct-bonded LED arrays and applications
JP6986418B2 (ja) * 2017-11-07 2021-12-22 株式会社カネカ 積層型光電変換装置および積層型光電変換装置モジュールの製造方法
US11011503B2 (en) * 2017-12-15 2021-05-18 Invensas Bonding Technologies, Inc. Direct-bonded optoelectronic interconnect for high-density integrated photonics
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US11256004B2 (en) 2018-03-20 2022-02-22 Invensas Bonding Technologies, Inc. Direct-bonded lamination for improved image clarity in optical devices
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
CN117457798A (zh) * 2023-11-06 2024-01-26 天合光能股份有限公司 叠层太阳能电池的制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335683A (ja) * 1997-05-28 1998-12-18 Ion Kogaku Kenkyusho:Kk タンデム型太陽電池およびその製造方法
KR20010012684A (ko) * 1998-03-19 2001-02-26 와다 아끼히로 태양전지
JP2001308354A (ja) * 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
JP2002237609A (ja) * 2001-02-08 2002-08-23 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜太陽電池の製造方法
JP2003298089A (ja) * 2002-04-02 2003-10-17 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2006066535A (ja) * 2004-08-25 2006-03-09 Fuji Photo Film Co Ltd 光電変換素子及び撮像素子
JP2006527490A (ja) * 2003-06-12 2006-11-30 コナルカ テクノロジーズ インコーポレイテッド 共有する有機電極を備えたタンデム型太陽電池
WO2007121252A2 (en) * 2006-04-11 2007-10-25 Konarka Technologies, Inc. Tandem photovoltaic cells

Family Cites Families (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
JPS5461886A (en) * 1977-10-27 1979-05-18 Mitsubishi Chem Ind Phtocell anode electrode and method of fabricating same
US4272641A (en) * 1979-04-19 1981-06-09 Rca Corporation Tandem junction amorphous silicon solar cells
US4316049A (en) * 1979-08-28 1982-02-16 Rca Corporation High voltage series connected tandem junction solar battery
DE3242831A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
JPH0644638B2 (ja) 1982-12-29 1994-06-08 圭弘 濱川 異質単位セル同士のスタック形光起電力素子
US4510344A (en) * 1983-12-19 1985-04-09 Atlantic Richfield Company Thin film solar cell substrate
JPS60152971A (ja) * 1984-01-20 1985-08-12 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4633034A (en) * 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US4680422A (en) * 1985-10-30 1987-07-14 The Boeing Company Two-terminal, thin film, tandem solar cells
US4665277A (en) * 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
US4684761A (en) * 1986-04-09 1987-08-04 The Boeing Company Method for making graded I-III-VI2 semiconductors and solar cell obtained thereby
CA1303194C (en) * 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
DE3854040T2 (de) * 1987-11-20 1995-10-26 Canon Kk Photovoltaisches PIN-Bauelement, Tandem-und Triple-Zellen.
US5075763A (en) * 1988-09-28 1991-12-24 Kopin Corporation High temperature metallization system for contacting semiconductor materials
US5002617A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film
JPH02192771A (ja) * 1989-01-21 1990-07-30 Canon Inc 光起電力素子
JP2829653B2 (ja) * 1989-01-21 1998-11-25 キヤノン株式会社 光起電力素子
US5002618A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
JPH04275467A (ja) * 1991-03-04 1992-10-01 Sanyo Electric Co Ltd フォトトランジスタ
JP3048732B2 (ja) * 1991-11-25 2000-06-05 三洋電機株式会社 光起電力装置
US5656098A (en) * 1992-03-03 1997-08-12 Canon Kabushiki Kaisha Photovoltaic conversion device and method for producing same
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
JP2761156B2 (ja) * 1992-06-30 1998-06-04 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
JP3360919B2 (ja) * 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
US5635408A (en) * 1994-04-28 1997-06-03 Canon Kabushiki Kaisha Method of producing a semiconductor device
US5668050A (en) * 1994-04-28 1997-09-16 Canon Kabushiki Kaisha Solar cell manufacturing method
US5780160A (en) * 1994-10-26 1998-07-14 Donnelly Corporation Electrochromic devices with improved processability and methods of preparing the same
JP2992464B2 (ja) * 1994-11-04 1999-12-20 キヤノン株式会社 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法
US5736431A (en) * 1995-02-28 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for producing thin film solar battery
JPH08255762A (ja) * 1995-03-17 1996-10-01 Nec Corp 半導体デバイスの製造方法
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
TW448584B (en) * 1995-03-27 2001-08-01 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
US6191353B1 (en) * 1996-01-10 2001-02-20 Canon Kabushiki Kaisha Solar cell module having a specific surface side cover excelling in moisture resistance and transparency
JPH09255487A (ja) * 1996-03-18 1997-09-30 Sony Corp 薄膜半導体の製造方法
US5720827A (en) * 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
EP0851513B1 (en) * 1996-12-27 2007-11-21 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US6756289B1 (en) * 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US5989737A (en) * 1997-02-27 1999-11-23 Xerox Corporation Organic electroluminescent devices
JPH11288858A (ja) * 1998-01-30 1999-10-19 Canon Inc Ｓｏｉ基板の再生方法及び再生基板
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
US6486601B1 (en) * 1998-06-26 2002-11-26 Idemitsu Kosan Co., Ltd. Organic luminescence device with reduced leakage current
JP2000150837A (ja) * 1998-11-13 2000-05-30 Canon Inc 半導体基体の作製方法
JP4452789B2 (ja) * 1999-09-01 2010-04-21 独立行政法人 日本原子力研究開発機構 シリコン系結晶薄板の製造方法および光電変換素子用基板の製造方法
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
TW474114B (en) * 1999-09-29 2002-01-21 Junji Kido Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device
KR100805210B1 (ko) * 2000-07-19 2008-02-21 마쯔시다덴기산교 가부시키가이샤 전극이 있는 기판 및 그 제조방법
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
US6930025B2 (en) * 2001-02-01 2005-08-16 Canon Kabushiki Kaisha Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device
JP4560245B2 (ja) * 2001-06-29 2010-10-13 キヤノン株式会社 光起電力素子
US6815788B2 (en) * 2001-08-10 2004-11-09 Hitachi Cable Ltd. Crystalline silicon thin film semiconductor device, crystalline silicon thin film photovoltaic device, and process for producing crystalline silicon thin film semiconductor device
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP2004014958A (ja) 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
US7158161B2 (en) * 2002-09-20 2007-01-02 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
JP2005050905A (ja) 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
JP4683829B2 (ja) * 2003-10-17 2011-05-18 淳二 城戸 有機エレクトロルミネッセント素子及びその製造方法
JP4476594B2 (ja) * 2003-10-17 2010-06-09 淳二 城戸 有機エレクトロルミネッセント素子
JP4243237B2 (ja) * 2003-11-10 2009-03-25 淳二 城戸 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
JP4300176B2 (ja) * 2003-11-13 2009-07-22 ローム株式会社 有機エレクトロルミネッセント素子
KR20060110323A (ko) * 2003-12-16 2006-10-24 마츠시타 덴끼 산교 가부시키가이샤 유기 전기발광 소자 및 그 제조 방법
JPWO2005096397A1 (ja) * 2004-03-31 2008-02-21 ローム株式会社 積層型薄膜太陽電池およびその製法
JP4925569B2 (ja) * 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
WO2006025260A1 (ja) * 2004-08-31 2006-03-09 Kyoto University 積層型有機無機複合高効率太陽電池
KR20060085465A (ko) * 2005-01-24 2006-07-27 삼성전자주식회사 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지
US8659008B2 (en) * 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
US20070267055A1 (en) * 2005-07-14 2007-11-22 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US20070181179A1 (en) * 2005-12-21 2007-08-09 Konarka Technologies, Inc. Tandem photovoltaic cells
US7772485B2 (en) * 2005-07-14 2010-08-10 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US20070131270A1 (en) * 2005-07-14 2007-06-14 Russell Gaudiana Window with photovoltaic cell
US7781673B2 (en) * 2005-07-14 2010-08-24 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US8158881B2 (en) * 2005-07-14 2012-04-17 Konarka Technologies, Inc. Tandem photovoltaic cells
US20080006324A1 (en) * 2005-07-14 2008-01-10 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
US20070193621A1 (en) * 2005-12-21 2007-08-23 Konarka Technologies, Inc. Photovoltaic cells
US7671271B2 (en) * 2006-03-08 2010-03-02 National Science And Technology Dev. Agency Thin film solar cell and its fabrication process
KR20070101917A (ko) * 2006-04-12 2007-10-18 엘지전자 주식회사 박막형 태양전지와 그의 제조방법
US7608521B2 (en) * 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
EP2022097A2 (en) * 2006-05-31 2009-02-11 Corning Incorporated Thin film photovoltaic structure and fabrication
US20070289626A1 (en) * 2006-06-20 2007-12-20 Konarka Technologies, Inc. Photovoltaic cells
US8008424B2 (en) * 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with thiazole-containing polymer
US8008421B2 (en) * 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with silole-containing polymer
US20080092947A1 (en) * 2006-10-24 2008-04-24 Applied Materials, Inc. Pulse plating of a low stress film on a solar cell substrate
CN101652867B (zh) * 2007-04-06 2012-08-08 株式会社半导体能源研究所 光伏器件及其制造方法
EP2143146A1 (en) * 2007-04-13 2010-01-13 Semiconductor Energy Laboratory Co, Ltd. Photovoltaic device and method for manufacturing the same
CN101842910B (zh) * 2007-11-01 2013-03-27 株式会社半导体能源研究所 用于制造光电转换器件的方法
KR101608953B1 (ko) * 2007-11-09 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
TWI452703B (zh) * 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248995B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335683A (ja) * 1997-05-28 1998-12-18 Ion Kogaku Kenkyusho:Kk タンデム型太陽電池およびその製造方法
KR20010012684A (ko) * 1998-03-19 2001-02-26 와다 아끼히로 태양전지
JP2001308354A (ja) * 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
JP2002237609A (ja) * 2001-02-08 2002-08-23 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜太陽電池の製造方法
JP2003298089A (ja) * 2002-04-02 2003-10-17 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2006527490A (ja) * 2003-06-12 2006-11-30 コナルカ テクノロジーズ インコーポレイテッド 共有する有機電極を備えたタンデム型太陽電池
JP2006066535A (ja) * 2004-08-25 2006-03-09 Fuji Photo Film Co Ltd 光電変換素子及び撮像素子
WO2007121252A2 (en) * 2006-04-11 2007-10-25 Konarka Technologies, Inc. Tandem photovoltaic cells

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