KR20010012684A - 태양전지 - Google Patents

태양전지 Download PDF

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Publication number
KR20010012684A
KR20010012684A KR1019997010645A KR19997010645A KR20010012684A KR 20010012684 A KR20010012684 A KR 20010012684A KR 1019997010645 A KR1019997010645 A KR 1019997010645A KR 19997010645 A KR19997010645 A KR 19997010645A KR 20010012684 A KR20010012684 A KR 20010012684A
Authority
KR
South Korea
Prior art keywords
solar battery
solar
battery
Prior art date
Application number
KR1019997010645A
Other languages
English (en)
Other versions
KR100326835B1 (ko
Inventor
나가시마도모노리
니시까와다께시
Original Assignee
와다 아끼히로
도요다 지도샤 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP07097698A external-priority patent/JP3368822B2/ja
Priority claimed from JP12477898A external-priority patent/JP3368825B2/ja
Priority claimed from JP36876798A external-priority patent/JP3368854B2/ja
Application filed by 와다 아끼히로, 도요다 지도샤 가부시끼가이샤 filed Critical 와다 아끼히로
Publication of KR20010012684A publication Critical patent/KR20010012684A/ko
Application granted granted Critical
Publication of KR100326835B1 publication Critical patent/KR100326835B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
KR1019997010645A 1998-03-19 1999-02-04 태양전지 KR100326835B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP07097698A JP3368822B2 (ja) 1998-03-19 1998-03-19 太陽電池
JP98-70976 1998-03-19
JP98-124778 1998-05-07
JP12477898A JP3368825B2 (ja) 1998-05-07 1998-05-07 太陽電池
JP36876798A JP3368854B2 (ja) 1998-12-25 1998-12-25 太陽電池
JP98-368767 1998-12-25

Publications (2)

Publication Number Publication Date
KR20010012684A true KR20010012684A (ko) 2001-02-26
KR100326835B1 KR100326835B1 (ko) 2002-03-04

Family

ID=27300498

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997010645A KR100326835B1 (ko) 1998-03-19 1999-02-04 태양전지

Country Status (6)

Country Link
EP (1) EP0984494B1 (ko)
KR (1) KR100326835B1 (ko)
CN (1) CN1319179C (ko)
AU (1) AU727351B2 (ko)
DE (1) DE69920608T2 (ko)
WO (1) WO1999048157A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101558911B1 (ko) * 2007-12-28 2015-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6166320A (en) * 1998-03-19 2000-12-26 Toyota Jidosha Kabushiki Kaisha Tandem solar cell
JP4244549B2 (ja) 2001-11-13 2009-03-25 トヨタ自動車株式会社 光電変換素子及びその製造方法
EP1709690A4 (en) 2004-01-20 2009-03-11 Cyrium Technologies Inc SOLAR CELL WITH EPITAXIAL GROWTH QUANTUM DOT MATERIAL
US9018515B2 (en) 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US8138410B2 (en) * 2008-10-01 2012-03-20 International Business Machines Corporation Optical tandem photovoltaic cell panels
CN103094406B (zh) * 2011-11-07 2015-11-04 太极能源科技股份有限公司 多晶硅太阳能电池及其制造方法
CN103390622A (zh) * 2012-05-11 2013-11-13 冠晶光电股份有限公司 层叠型太阳能电池结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device
US4239554A (en) * 1978-07-17 1980-12-16 Shunpei Yamazaki Semiconductor photoelectric conversion device
DE2834119C2 (de) * 1978-08-03 1981-01-15 Bayer Ag, 5090 Leverkusen Verfahren zur Herstellung von Organopolysiloxanformmassen, die feinporige, gummielastische Formschaumkörper ergeben
JPS5923572A (ja) * 1982-07-30 1984-02-07 Matsushita Electric Works Ltd 太陽電池
JPS59138386A (ja) * 1983-01-28 1984-08-08 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
JPS63222469A (ja) * 1987-03-11 1988-09-16 Mitsubishi Electric Corp 積層型光起電力素子
JPH03181180A (ja) * 1989-12-11 1991-08-07 Canon Inc 太陽電池およびその製造方法
JPH09213980A (ja) * 1996-02-07 1997-08-15 Toyota Motor Corp 太陽電池の冷却方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101558911B1 (ko) * 2007-12-28 2015-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법

Also Published As

Publication number Publication date
AU2298799A (en) 1999-10-11
WO1999048157A1 (en) 1999-09-23
DE69920608D1 (de) 2004-11-04
EP0984494A4 (en) 2001-05-09
CN1319179C (zh) 2007-05-30
KR100326835B1 (ko) 2002-03-04
AU727351B2 (en) 2000-12-14
DE69920608T2 (de) 2005-10-06
EP0984494B1 (en) 2004-09-29
CN1272225A (zh) 2000-11-01
EP0984494A1 (en) 2000-03-08

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A201 Request for examination
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