JP2008544540A - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

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Publication number
JP2008544540A
JP2008544540A JP2008518038A JP2008518038A JP2008544540A JP 2008544540 A JP2008544540 A JP 2008544540A JP 2008518038 A JP2008518038 A JP 2008518038A JP 2008518038 A JP2008518038 A JP 2008518038A JP 2008544540 A JP2008544540 A JP 2008544540A
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Prior art keywords
semiconductor layer
type semiconductor
light emitting
light
mask pattern
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Withdrawn
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JP2008518038A
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English (en)
Japanese (ja)
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JP2008544540A5 (enExample
Inventor
イ，ジョンラン
イ，ジェホ
ユン，ヨジン
フアン，ウイジン
キム，デウォン
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=37570683&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2008544540(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1020050053797A external-priority patent/KR100691497B1/ko
Priority claimed from KR1020050055179A external-priority patent/KR100646635B1/ko
Priority claimed from KR1020060021801A external-priority patent/KR100690323B1/ko
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of JP2008544540A publication Critical patent/JP2008544540A/ja
Publication of JP2008544540A5 publication Critical patent/JP2008544540A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
JP2008518038A 2005-06-22 2006-06-22 発光素子及びその製造方法 Withdrawn JP2008544540A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020050053797A KR100691497B1 (ko) 2005-06-22 2005-06-22 발광 소자 및 이의 제조 방법
KR1020050055179A KR100646635B1 (ko) 2005-06-24 2005-06-24 복수 셀의 단일 발광 소자 및 이의 제조 방법
KR1020060021801A KR100690323B1 (ko) 2006-03-08 2006-03-08 배선들을 갖는 교류용 발광 다이오드 및 그것을 제조하는방법
PCT/KR2006/002427 WO2006137711A1 (en) 2005-06-22 2006-06-22 Light emitting device and method of manufacturing the same

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009262658A Division JP2010034608A (ja) 2005-06-22 2009-11-18 発光素子
JP2012021079A Division JP5554792B2 (ja) 2005-06-22 2012-02-02 発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2008544540A true JP2008544540A (ja) 2008-12-04
JP2008544540A5 JP2008544540A5 (enExample) 2010-01-14

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ID=37570683

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2008518038A Withdrawn JP2008544540A (ja) 2005-06-22 2006-06-22 発光素子及びその製造方法
JP2009262658A Withdrawn JP2010034608A (ja) 2005-06-22 2009-11-18 発光素子
JP2012021079A Active JP5554792B2 (ja) 2005-06-22 2012-02-02 発光素子及びその製造方法
JP2014022820A Pending JP2014112713A (ja) 2005-06-22 2014-02-07 発光素子及びその製造方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2009262658A Withdrawn JP2010034608A (ja) 2005-06-22 2009-11-18 発光素子
JP2012021079A Active JP5554792B2 (ja) 2005-06-22 2012-02-02 発光素子及びその製造方法
JP2014022820A Pending JP2014112713A (ja) 2005-06-22 2014-02-07 発光素子及びその製造方法

Country Status (4)

Country Link
US (10) US8476648B2 (enExample)
EP (3) EP2750194A1 (enExample)
JP (4) JP2008544540A (enExample)
WO (1) WO2006137711A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
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KR20110093587A (ko) * 2010-02-12 2011-08-18 서울옵토디바이스주식회사 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 그 제조방법
JP2011166146A (ja) * 2010-02-12 2011-08-25 Seoul Opto Devices Co Ltd 分布ブラッグ反射器を有する発光ダイオードチップ及びその製造方法
JP2012114377A (ja) * 2010-11-26 2012-06-14 Mitsubishi Chemicals Corp 半導体発光素子
JP2013135098A (ja) * 2011-12-27 2013-07-08 Sanken Electric Co Ltd 半導体発光装置
JP2015201657A (ja) * 2015-06-11 2015-11-12 日亜化学工業株式会社 発光装置
JP2017504216A (ja) * 2014-01-23 2017-02-02 中国科学院蘇州納米技術与納米▲ファン▼生研究所 ウエハレベル半導体デバイス及びその製造方法
US9577157B2 (en) 2009-11-13 2017-02-21 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed Bragg reflector and method of fabricating the same

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Publication number Priority date Publication date Assignee Title
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
JP3802910B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
WO2006137711A1 (en) 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
US8901575B2 (en) * 2005-08-09 2014-12-02 Seoul Viosys Co., Ltd. AC light emitting diode and method for fabricating the same
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WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
JP4861437B2 (ja) 2006-01-09 2012-01-25 ソウル オプト デバイス カンパニー リミテッド Ｉｔｏ層を有する発光ダイオード及びその製造方法
WO2007123735A1 (en) * 2006-03-30 2007-11-01 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
WO2008088838A1 (en) * 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
EP3848970A1 (en) 2007-01-22 2021-07-14 Cree, Inc. Multiple light emitting diode emitter
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
KR100889956B1 (ko) 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
KR100928259B1 (ko) 2007-10-15 2009-11-24 엘지전자 주식회사 발광 장치 및 그 제조방법
US8183582B2 (en) * 2007-10-16 2012-05-22 LumaChip, Inc. Bare die semiconductor device configured for lamination
TWI372478B (en) 2008-01-08 2012-09-11 Epistar Corp Light-emitting device
CN102136533A (zh) * 2008-01-24 2011-07-27 晶元光电股份有限公司 发光元件的制造方法
JP2009283912A (ja) * 2008-04-25 2009-12-03 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
CN102124574B (zh) * 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
US8435816B2 (en) * 2008-08-22 2013-05-07 Lattice Power (Jiangxi) Corporation Method for fabricating InGaAlN light emitting device on a combined substrate
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
DE102008049188A1 (de) * 2008-09-26 2010-04-01 Osram Opto Semiconductors Gmbh Optoelektronisches Modul mit einem Trägersubstrat und einer Mehrzahl von strahlungsemittierenden Halbleiterbauelementen und Verfahren zu dessen Herstellung
JP2010103522A (ja) * 2008-10-21 2010-05-06 Seoul Opto Devices Co Ltd 遅延蛍光体を備える交流駆動型の発光素子及び発光素子モジュール
CN101800219B (zh) * 2009-02-09 2019-09-17 晶元光电股份有限公司 发光元件
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
US8105852B2 (en) * 2010-01-15 2012-01-31 Koninklijke Philips Electronics N.V. Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
US8658513B2 (en) * 2010-05-04 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Isolation by implantation in LED array manufacturing
US8471282B2 (en) * 2010-06-07 2013-06-25 Koninklijke Philips Electronics N.V. Passivation for a semiconductor light emitting device
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JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
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US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US9012948B2 (en) * 2010-10-04 2015-04-21 Epistar Corporation Light-emitting element having a plurality of contact parts
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US8592847B2 (en) * 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
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US8274091B1 (en) * 2011-07-07 2012-09-25 Yuan Ze University Light emitting device with light extraction layer and fabricating method thereof
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
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JP5644745B2 (ja) * 2011-12-05 2014-12-24 豊田合成株式会社 半導体発光素子および発光装置
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KR101669641B1 (ko) 2012-06-28 2016-10-26 서울바이오시스 주식회사 표면 실장용 발광 다이오드, 그 형성방법 및 발광 다이오드 모듈의 제조방법
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
US9318529B2 (en) 2012-09-07 2016-04-19 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10388690B2 (en) * 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
CN109638032B (zh) * 2012-09-07 2023-10-27 首尔伟傲世有限公司 发光二极管阵列
KR102087933B1 (ko) 2012-11-05 2020-04-14 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 어레이
US20140209961A1 (en) * 2013-01-30 2014-07-31 Luxo-Led Co., Limited Alternating current light emitting diode flip-chip
CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触
US9673254B2 (en) * 2013-07-22 2017-06-06 Lg Innotek Co., Ltd. Light emitting device
KR102194805B1 (ko) * 2013-07-22 2020-12-28 엘지이노텍 주식회사 발광소자
DE102014107555A1 (de) 2014-05-28 2015-12-03 Osram Opto Semiconductors Gmbh Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement
JP6328497B2 (ja) * 2014-06-17 2018-05-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子、パッケージ素子、および発光パネル装置
CN107155373B (zh) * 2014-06-18 2019-01-15 艾克斯瑟乐普林特有限公司 微组装led显示器
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11997768B2 (en) 2014-09-28 2024-05-28 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US9853197B2 (en) * 2014-09-29 2017-12-26 Bridgelux, Inc. Light emitting diode package having series connected LEDs
JP2016081562A (ja) 2014-10-09 2016-05-16 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
KR102231646B1 (ko) * 2014-10-17 2021-03-24 엘지이노텍 주식회사 발광 소자
KR20160054073A (ko) * 2014-11-05 2016-05-16 삼성전자주식회사 디스플레이 장치 및 디스플레이 패널
KR102255214B1 (ko) 2014-11-13 2021-05-24 삼성전자주식회사 발광 소자
WO2016194370A1 (ja) * 2015-06-01 2016-12-08 東芝ホクト電子株式会社 発光モジュール
KR102316325B1 (ko) * 2015-07-06 2021-10-22 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN107924968B (zh) * 2015-08-18 2022-08-23 苏州立琻半导体有限公司 发光元件、包括发光元件的发光元件封装和包括发光元件封装的发光装置
JP6834492B2 (ja) * 2015-10-30 2021-02-24 東レ株式会社 基板の製造方法およびそれを用いた発光素子の製造方法
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
KR102572515B1 (ko) * 2016-08-09 2023-08-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 구비한 조명 장치
KR102571788B1 (ko) * 2016-08-30 2023-09-04 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자, 발광 소자 및 이를 구비한 조명 장치
US12322732B2 (en) * 2017-02-09 2025-06-03 Vuereal Inc. Circuit and system integration onto a microdevice substrate
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
KR102601620B1 (ko) 2017-08-03 2023-11-15 크리엘이디, 인크. 고밀도 픽셀화된 led 칩 및 칩 어레이 장치, 그리고 그 제조 방법
US11522006B2 (en) * 2017-12-21 2022-12-06 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11037911B2 (en) 2017-12-27 2021-06-15 Nichia Corporation Light emitting device
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
JP6822429B2 (ja) * 2018-02-19 2021-01-27 日亜化学工業株式会社 発光素子
CN108470752A (zh) * 2018-03-27 2018-08-31 京东方科技集团股份有限公司 像素界定层及其制造方法和显示基板
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
US10607515B2 (en) * 2018-04-19 2020-03-31 Lg Electronics Inc. Display device using semiconductor light emitting device and method for manufacturing the same
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
CN109300919B (zh) * 2018-10-15 2020-09-29 上海天马微电子有限公司 Micro LED显示基板及其制作方法、显示装置
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
WO2020174949A1 (ja) * 2019-02-26 2020-09-03 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置及び半導体レーザ素子
KR102737506B1 (ko) * 2019-03-18 2024-12-05 삼성전자주식회사 반도체 발광소자 및 그 제조 방법
EP4052296A1 (en) 2019-10-29 2022-09-07 Creeled, Inc. Texturing for high density pixelated-led chips
US11404473B2 (en) * 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
EP4170734A4 (en) * 2020-06-18 2024-06-19 Nichia Corporation METHOD FOR PRODUCING AN IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
US11631786B2 (en) 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
TWI789764B (zh) * 2021-05-21 2023-01-11 友達光電股份有限公司 發光元件及其製造方法與發光裝置的製造方法
TWI778835B (zh) * 2021-10-21 2022-09-21 隆達電子股份有限公司 電子元件連接基座以及使用此電子元件連接基座製成之電子裝置
KR102783689B1 (ko) * 2021-11-12 2025-03-21 엘지전자 주식회사 디스플레이 장치
CN116466509A (zh) * 2023-04-27 2023-07-21 鄂尔多斯市源盛光电有限责任公司 液晶显示面板的制备方法、液晶显示面板以及电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002043633A (ja) * 2000-07-25 2002-02-08 Stanley Electric Co Ltd 白色発光ダイオ−ド
KR20040005098A (ko) * 2002-07-08 2004-01-16 주식회사 비첼 질화물계 반도체 발광 소자 및 그 제조방법
WO2005008791A2 (en) * 2003-07-16 2005-01-27 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
US20050254243A1 (en) * 2002-10-24 2005-11-17 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252434A (en) * 1992-02-20 1993-10-12 At&T Bell Laboratories Method for forming a sloped surface having a predetermined slope
US5406095A (en) * 1992-08-27 1995-04-11 Victor Company Of Japan, Ltd. Light emitting diode array and production method of the light emitting diode
JP2964822B2 (ja) 1993-02-19 1999-10-18 日亜化学工業株式会社 発光ダイオードの製造方法
JPH06318731A (ja) * 1993-03-12 1994-11-15 Sharp Corp 半導体発光装置
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
JPH07153993A (ja) 1993-11-29 1995-06-16 Daido Steel Co Ltd 発光ダイオード
JP3717196B2 (ja) * 1994-07-19 2005-11-16 豊田合成株式会社 発光素子
US5940683A (en) * 1996-01-18 1999-08-17 Motorola, Inc. LED display packaging with substrate removal and method of fabrication
DE19640003B4 (de) * 1996-09-27 2005-07-07 Siemens Ag Halbleitervorrichtung und Verfahren zu dessen Herstellung
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP4203132B2 (ja) * 1997-03-31 2008-12-24 シャープ株式会社 発光素子及びその製造方法
JP3505374B2 (ja) 1997-11-14 2004-03-08 三洋電機株式会社 発光部品
US6633120B2 (en) * 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
US7253445B2 (en) * 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
US6608330B1 (en) * 1998-09-21 2003-08-19 Nichia Corporation Light emitting device
JP3659098B2 (ja) 1999-11-30 2005-06-15 日亜化学工業株式会社 窒化物半導体発光素子
JP2001168383A (ja) * 1999-12-03 2001-06-22 Matsushita Electronics Industry Corp 複合発光素子の製造方法
JP4773597B2 (ja) 1999-12-24 2011-09-14 ローム株式会社 半導体発光素子
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
JP2002026378A (ja) 2000-07-05 2002-01-25 Kyocera Corp 発光ダイオードおよびｌｅｄアレーヘッド
JP2002026384A (ja) * 2000-07-05 2002-01-25 Nichia Chem Ind Ltd 集積型窒化物半導体発光素子
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
JP2002185032A (ja) * 2000-10-06 2002-06-28 Furukawa Electric Co Ltd:The 受光アレイ素子、受光モジュール及び受光モジュールと光コネクタとの接続構造
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
US6987613B2 (en) 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
CN1220283C (zh) * 2001-04-23 2005-09-21 松下电工株式会社 使用led芯片的发光装置
JP4075321B2 (ja) * 2001-04-24 2008-04-16 日亜化学工業株式会社 集積型窒化物半導体発光素子
JP2002329896A (ja) * 2001-05-02 2002-11-15 Kansai Tlo Kk Ｌｅｄ面発光装置
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
US7067916B2 (en) * 2001-06-20 2006-06-27 International Business Machines Corporation Extension of fatigue life for C4 solder ball to chip connection
JP2003031840A (ja) * 2001-07-11 2003-01-31 Hitachi Cable Ltd 発光ダイオードアレイ
KR100433989B1 (ko) 2001-09-11 2004-06-04 삼성전기주식회사 반도체 엘이디 소자 및 그 제조방법
JP4045767B2 (ja) * 2001-09-28 2008-02-13 日亜化学工業株式会社 半導体発光装置
JP3620498B2 (ja) 2001-12-07 2005-02-16 日亜化学工業株式会社 窒化物半導体レーザ素子
KR20030052499A (ko) 2001-12-21 2003-06-27 삼성전자주식회사 반도체 발광 소자
JP4269709B2 (ja) * 2002-02-19 2009-05-27 日亜化学工業株式会社 発光装置およびその製造方法
JP3822545B2 (ja) 2002-04-12 2006-09-20 士郎 酒井 発光装置
US7164155B2 (en) * 2002-05-15 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6635902B1 (en) * 2002-05-24 2003-10-21 Para Light Electronics Co., Ltd. Serial connection structure of light emitting diode chip
JP4123830B2 (ja) * 2002-05-28 2008-07-23 松下電工株式会社 Ｌｅｄチップ
JP2003031852A (ja) * 2002-07-01 2003-01-31 Rohm Co Ltd 半導体発光素子、およびその製造方法
AU2003252359A1 (en) 2002-08-01 2004-02-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
JP3912219B2 (ja) 2002-08-01 2007-05-09 日亜化学工業株式会社 窒化物半導体発光素子
JP4309106B2 (ja) 2002-08-21 2009-08-05 士郎 酒井 ＩｎＧａＮ系化合物半導体発光装置の製造方法
KR100697803B1 (ko) 2002-08-29 2007-03-20 시로 사카이 복수의 발광 소자를 갖는 발광 장치
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US6957899B2 (en) * 2002-10-24 2005-10-25 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
JP2004200277A (ja) * 2002-12-17 2004-07-15 Matsushita Electric Ind Co Ltd 複合発光素子
GB0302580D0 (en) * 2003-02-05 2003-03-12 Univ Strathclyde MICRO LEDs
JP2004273746A (ja) 2003-03-07 2004-09-30 Hitachi Cable Ltd 発光ダイオードアレイ
TWI220798B (en) * 2003-03-07 2004-09-01 Hitachi Cable Light-emitting diode array
US7057208B2 (en) * 2003-03-25 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2004311677A (ja) 2003-04-07 2004-11-04 Matsushita Electric Works Ltd 半導体発光素子
US20040206970A1 (en) * 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
RU2231171C1 (ru) * 2003-04-30 2004-06-20 Закрытое акционерное общество "Инновационная фирма "ТЕТИС" Светоизлучающий диод
JP4699681B2 (ja) 2003-06-27 2011-06-15 パナソニック株式会社 Ｌｅｄモジュール、および照明装置
JP2005051233A (ja) * 2003-07-15 2005-02-24 Matsushita Electric Ind Co Ltd 半導体発光装置およびその製造方法
WO2005008792A1 (ja) * 2003-07-18 2005-01-27 Sanyo Electric Co., Ltd. 発光ダイオード
JP2005064104A (ja) * 2003-08-08 2005-03-10 Hitachi Cable Ltd 発光ダイオードアレイ
JP4160881B2 (ja) * 2003-08-28 2008-10-08 松下電器産業株式会社 半導体発光装置、発光モジュール、照明装置、および半導体発光装置の製造方法
JP4305102B2 (ja) * 2003-09-03 2009-07-29 豊田合成株式会社 半導体発光素子用複合基板及びその製造方法、並びに半導体発光素子の製造方法
EP1665397A2 (en) * 2003-09-16 2006-06-07 Matsushita Electric Industrial Co., Ltd. Led lighting source and led lighting apparatus
JP2005117020A (ja) 2003-09-16 2005-04-28 Stanley Electric Co Ltd 窒化ガリウム系化合物半導体素子とその製造方法
US7902747B2 (en) * 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP4683832B2 (ja) 2003-10-30 2011-05-18 京セラ株式会社 発光ダイオードアレイ装置及びそれを用いた発光ダイオードプリンタ
JP4334321B2 (ja) 2003-11-05 2009-09-30 シャープ株式会社 窒化物半導体発光ダイオードチップの作製方法
EP1686629B1 (en) 2003-11-19 2018-12-26 Nichia Corporation Nitride semiconductor light emitting diode and method for manufacturing the same
KR100593891B1 (ko) 2003-12-26 2006-06-28 삼성전기주식회사 플립칩용 질화물 반도체 발광소자 및 그 제조방법
JP4868709B2 (ja) * 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
TW200501464A (en) * 2004-08-31 2005-01-01 Ind Tech Res Inst LED chip structure with AC loop
KR101216938B1 (ko) 2004-10-28 2012-12-31 서울반도체 주식회사 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 및 이를이용한 발광 장치
US7221044B2 (en) * 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
US7525248B1 (en) * 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
US7535028B2 (en) * 2005-02-03 2009-05-19 Ac Led Lighting, L.Lc. Micro-LED based high voltage AC/DC indicator lamp
US7474681B2 (en) * 2005-05-13 2009-01-06 Industrial Technology Research Institute Alternating current light-emitting device
WO2006137711A1 (en) * 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
TWI331406B (en) * 2005-12-14 2010-10-01 Advanced Optoelectronic Tech Single chip with multi-led
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002043633A (ja) * 2000-07-25 2002-02-08 Stanley Electric Co Ltd 白色発光ダイオ−ド
KR20040005098A (ko) * 2002-07-08 2004-01-16 주식회사 비첼 질화물계 반도체 발광 소자 및 그 제조방법
US20050254243A1 (en) * 2002-10-24 2005-11-17 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
WO2005008791A2 (en) * 2003-07-16 2005-01-27 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9577157B2 (en) 2009-11-13 2017-02-21 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
US10128306B2 (en) 2009-11-13 2018-11-13 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
US10141480B2 (en) 2009-11-13 2018-11-27 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
KR20110093587A (ko) * 2010-02-12 2011-08-18 서울옵토디바이스주식회사 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 그 제조방법
JP2011166146A (ja) * 2010-02-12 2011-08-25 Seoul Opto Devices Co Ltd 分布ブラッグ反射器を有する発光ダイオードチップ及びその製造方法
KR101712543B1 (ko) * 2010-02-12 2017-03-07 서울바이오시스 주식회사 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 그 제조방법
JP2012114377A (ja) * 2010-11-26 2012-06-14 Mitsubishi Chemicals Corp 半導体発光素子
JP2013135098A (ja) * 2011-12-27 2013-07-08 Sanken Electric Co Ltd 半導体発光装置
JP2017504216A (ja) * 2014-01-23 2017-02-02 中国科学院蘇州納米技術与納米▲ファン▼生研究所 ウエハレベル半導体デバイス及びその製造方法
JP2015201657A (ja) * 2015-06-11 2015-11-12 日亜化学工業株式会社 発光装置

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US20100006870A1 (en) 2010-01-14
EP2161752A2 (en) 2010-03-10
US9627435B2 (en) 2017-04-18
US20100047943A1 (en) 2010-02-25
US9209223B2 (en) 2015-12-08
US20130234173A1 (en) 2013-09-12
US7723737B2 (en) 2010-05-25
US7951626B2 (en) 2011-05-31
US8704246B2 (en) 2014-04-22
US9929208B2 (en) 2018-03-27
US20100078658A1 (en) 2010-04-01
EP1897151A1 (en) 2008-03-12
JP2014112713A (ja) 2014-06-19

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