CN101800219B - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN101800219B
CN101800219B CN200910007059.2A CN200910007059A CN101800219B CN 101800219 B CN101800219 B CN 101800219B CN 200910007059 A CN200910007059 A CN 200910007059A CN 101800219 B CN101800219 B CN 101800219B
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light emitting
emitting diode
light
array chips
diode array
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CN101800219A (zh
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陈昭兴
洪详竣
王希维
梁立田
范进雍
钟健凯
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Epistar Corp
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Epistar Corp
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Priority to CN200910007059.2A priority Critical patent/CN101800219B/zh
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to CN200980145677.1A priority patent/CN102257619B/zh
Priority to KR1020167021072A priority patent/KR101784901B1/ko
Priority to CN201510168949.7A priority patent/CN104900637B/zh
Priority to KR1020117020892A priority patent/KR101646633B1/ko
Priority to US13/148,544 priority patent/US9142534B2/en
Priority to KR1020177027521A priority patent/KR102116359B1/ko
Priority to DE112009004359.3T priority patent/DE112009004359B4/de
Priority to PCT/CN2009/074422 priority patent/WO2010088823A1/zh
Publication of CN101800219A publication Critical patent/CN101800219A/zh
Priority to US14/829,262 priority patent/US10038029B2/en
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Abstract

本发明揭示一种可用于高压交流电的发光元件，其包含：次载体、位于次载体上的至少一电子元件、位于次载体上的多个发光二极管阵列芯片、位于次载体上的至少一焊垫，以及位于次载体上的导电线路；其中上述导电线路分别使电子元件、多个发光二极管阵列芯片，以及焊垫形成电性连接，且任二相邻发光二极管阵列芯片间的间距大于100μm，由此提高发光元件的散热效率。

Description

发光元件
技术领域
本发明涉及一种发光元件，特别是涉及一种在次载体上至少包含一电子元件与多个发光二极管阵列芯片并且可直接用于交流电的发光元件。
背景技术
发光二极管(light-emitting diode，LED)的发光原理是利用电子在n型半导体与p型半导体间移动的能量差，以光的形式将能量释放，这样的发光原理有别于白炽灯发热的发光原理，因此发光二极管被称为冷光源。此外，发光二极管具有高耐久性、寿命长、轻巧、耗电量低等优点，因此现今的照明市场对于发光二极管寄予厚望，将其视为新一代的照明工具，已逐渐取代传统光源，并且应用于各种领域，如交通号志、背光模块、路灯照明、医疗设备等。
图1为已知可用于交流电源的发光二极管照明元件结构示意图，如图1所示，已知可用于交流电源的发光二极管照明元件100包含次载体(submount)10、位于次载体10上的发光二极管阵列芯片12，以及与上述的发光二极管阵列芯片12形成电性连接的至少一焊垫14，其中上述的发光二极管阵列芯片12至少包含一基板120以及多个于基板120上的发光二极管单元122。
若欲将上述已知可用于交流电源的发光二极管照明元件100直接取代一般照明装置，此发光二极管照明元件100必须在100伏特至240伏特的高电压环境工作，而长时间处于工作状态的发光二极管照明元件100容易产生温度过高的问题。在上述高温高电流(压)的环境中，电子元件往往容易产生电致迁移效应(electron migration effect)，所谓“电致迁移效应”是指经由温度和电子风(electron wind)加乘效应所造成的金属离子的移动。一般而言，温度愈高愈容易发生金属离子的电迁移现象。在发光二极管元件中，电子流在高的温度下会使得金属原子从电极扩散至有源区域，诸如氧化铟锡(Indium TinOxide，ITO)和银等电极材料就容易有电致迁移。此外焊料(solder)或细小金属连结亦可能因为电致迁移效应产生空洞(void)，进而导致元件断路。
由上述描述可知，高温高电流(压)的工作环境大大地降低了可用于交流电源的发光二极管照明元件的可靠度。
发明内容
本发明的主要目的在于提供一种发光元件，其至少包含一次载体(submount)、位于次载体上的至少一电子元件，以及颗位于次载体上的多个发光二极管阵列芯片，其中上述多个发光二极管阵列芯片以串联或并联的方式与电子元件形成电性连接，且任二相邻的上述发光二极管阵列芯片的间距大于100μm，由此提高发光元件的散热效率。
本发明的又一目的是提供至少一位于次载体上的焊垫(bond pad)，与上述的电子元件以及发光二极管阵列芯片形成电性连接，并且通过焊垫与高压交流电源供应器连接，以提供交流电源至发光元件。
本发明的再一目的是提供发光元件，其中上述的电子元件可以是整流单元、电阻单元、电容单元或电感单元等无源元件，用以提高发光元件的效率。
本发明揭示一种发光元件，在此发光元件中具有多个发光二极管阵列芯片，且上述发光二极管阵列芯片包含多个发光二极管单元，并且排列成串接的封闭回路。
本发明说明一种发光元件，在此发光元件中具有多个发光二极管阵列芯片，且上述发光二极管阵列芯片包含多个发光二极管单元，多个发光二极管单元排列成多个串接封闭回路，其中任二相邻的封闭回路具有相异的串接方向，且此相邻的封闭回路具有共用部分。
附图说明
图1为已知可用于交流电源的发光二极管照明元件结构示意图。
图2A为本发明实施例的俯视结构示意图。
图2B为本发明实施例的侧视结构示意图。
图2C为本发明另一实施例的侧视结构示意图。
图3为本发明又一实施例的俯视结构示意图。
图4为本发明发光二极管阵列芯片的侧视结构示意图。
图5A至图5D为本发明实施例中发光二极管阵列芯片的制造流程示意图。
图6为本发明实施例中发光二极管阵列芯片的俯视结构示意图。
图7A与图7B为本发明实施例中发光二极管阵列芯片的电路示意图。
图8为本发明实施例中发光二极管阵列芯片的另一电路示意图。
附图标记说明
100：照明元件 10：次载体
12：发光二极管阵列芯片 14：焊垫
120：基板 122：发光二极管单元
200：发光元件 20：次载体
21：反射层 22：电子元件
23：波长转换层 24：发光二极管阵列芯片
25：封装胶材 26：焊垫
28：导电线路 300：发光元件
30：次载体 31：整流元件
32：发光二极管阵列芯片 34：电阻
36：电容 38：焊垫
39：导电线路 400：发光二极管阵列芯片
40：基板 42：发光二极管单元
44：电极 46：电性连接结构
500：发光二极管阵列芯片 50：基板
52：外延叠层 520：第一导电型半导体层
522：活性层 524：第二导电型半导体层
54：二极管单元 540：发光二极管单元
540’：发光二极管单元 542：整流二极管单元
56：电极 58：电性连接结构
580：绝缘层 582：金属层
542a：整流二极管单元 542b：整流二极管单元
542c：整流二极管单元 542d：整流二极管单元
56a：电极 56b：电极
具体实施方式
本发明揭示一种发光元件。为了使本发明的叙述更加详尽与完备，请参照下列描述并配合图2A至图8的图示。
图2A为本发明实施例的俯视结构示意图，图2B为本发明实施例的侧视结构示意图。如图2A与图2B所示，发光元件200至少包含一次载体(submount)20、位于次载体20上的至少一电子元件22、位于次载体20上的多个发光二极管阵列芯片(light-emitting arraychip)24、位于次载体20上的至少一焊垫26，以及位于次载体20上的导电线路(conductivetrace)28以串联或并联的方式电性连接上述的电子元件22、发光二极管阵列芯片24与焊垫26；其中，任二相邻发光二极管阵列芯片24之间具有间距D，并且间距D大于100μm；而上述焊垫26与交流电电源供应器(图未示)形成电性连接，其中此交流电电源供应器提供一般家用100V至240V的高压交流电至上述发光元件200。
在本实施例的发光元件200中，电子元件22由具有低导通电压高逆向偏压的至少一单元220排列而成的桥式整流回路的整流元件，通过此整流元件将交流电源供应器所提供的正弦波交流电(AC)转换为脉冲式直流电(pulsed DC)后供发光元件200利用；其中，具有低导通电压高逆向偏压的单元可以是齐纳二极管(Zener Diode)或肖特基二极管(Schottky Diode)。
上述的电子元件22除了可以是整流元件外亦可以是选自电阻、电容、电感等无源元件(passive element)所构成的组的至少一种单元。
图2C为本发明另一实施例结构示意图。如图2C所示，本发明的发光元件200亦包含位于次载体20上的反射层21，用以反射发光二极管阵列芯片24所发出的光线，而次载体20上还具有碗杯状凹陷结构29以容纳上述的电子元件22或发光二极管阵列芯片24。此外，上述的发光元件200还包含位于发光二极管阵列芯片24上的波长转换层23以及位于次载体20上且至少覆盖上述发光二极管阵列芯片24的封装胶材25。
图3为本发明另一实施例的俯视结构示意图。如图3所述，发光元件300至少包含次载体30、位于次载体30上的整流元件31、位于次载体30上的多个发光二极管阵列芯片32、位于次载体30上与发光二极管阵列芯片32串联的至少一电阻34、位于次载体30上与发光二极管阵列芯片32与电阻34并联的至少一电容36、位于次载体30上的至少一焊垫38，以及位于次载体30上的导电线路39用以使上述的整流元件31、发光二极管阵列芯片32、电容34、电阻36与焊垫38形成电性连接；其中，任二相邻发光二极管阵列芯片32之间具有大于100μm的间距；此外，上述焊垫38与交流电电源供应器(图未示)形成电性连接，其中上述的交流电电源供应器(图未示)提供为一般家用100V至240V的高压交流电的电源至上述发光元件300。
图4为上述实施例中发光二极管阵列芯片的侧视结构示意图。如图4所示，发光二极管阵列芯片400包含基板40、在基板40上的多个发光二极管单元(light-emitting diodeunit)42、位于基板40上的至少两个电极44，以及以串联或并联方式使多个发光二极管单元42与电极44形成电性连接的电性连接结构46；其中，上述连接结构46可以是金属线(wire)或金属层，而上述的电极44用以与本发明发光元件次载体上的导电线路形成电性连接(图未示)。不仅如此，此发光二极管阵列芯片400可通过控制发光二极管单元42的数量与连接方式使发光二极管阵列芯片400本身具有特定工作电压。通过上述发光二极管阵列芯片可弹性设计电压的特性，再配合多个发光二极管阵列芯片400串联的设计，使本发明发光元件可符合一般家用100V至240V的电压条件。
图5A至图5D为另一发光二极管阵列芯片的制造流程示意图。如图5A所示，提供基板50，并且以有机金属化学气相沉积法在基板50上形成外延叠层52，其中上述的外延叠层52由下而上至少包含第一导电型半导体层520、有源层522，以及第二导电型半导体层524，并且此外延叠层52的材料选自包含铝(Al)、镓(Ga)、铟(In)、氮(N)、磷(P)或砷(As)的半导体物质，例如氮化镓(GaN)系列材料或磷化铝镓铟(AlGaInP)系列材料。
随后，如图5B所示，利用光刻蚀刻技术蚀刻上述的外延叠层52，以定义出多个沟槽53，由此于基板50上形成多个二极管单元54，其中上述二极管单元54包含发光二极管单元540/540’与整流二极管单元542。
接着如图5C所示，再次利用光刻蚀刻技术蚀刻上述的二极管单元54，使二极管单元54裸露部分的第一导电型半导体层520。
最后，如图5D所示，在基板上形成电极56，用以与先前所述的次载体上的导电线路(图未示)形成电性连接；并且形成多个电性连接结构58电性连接相异二极管单元54与电极56。在本实施例中，电性连接结构58包含覆盖二极管单元54的侧壁的绝缘层580，以及位于绝缘层580上的金属层582。
此外，在上述发光二极管单元540中，任一发光二极管单元540以第一导电型半导体层520通过电性连接结构58与相邻发光二极管单元540’的第二导电型半导体层524形成电性连接，并且排列成串接的封闭回路，通过上述的步骤成发光二极管阵列芯片500。
图6为图5D中发光二极管阵列芯片500的俯视结构示意图。如图6所示，发光二极管阵列芯片500包含基板50、在基板50上的多个二极管单元54、位于基板50上的电极56a/56b，以及以串联或并联方式使连接相异二极管单元54与电极56a/56b的的电性连接结构58。
上述的多个二极管单元54，包含多个发光二极管单元540以及多个整流发光二极管单元542a/542b/542c/542d，其中电极56a通过电性连接结构58分别与整流发光二极管单元542a的第一导电型半导体层(图未示)以及542b的第二导电型半导体层(图未示)形成电性连接；而电极56b通过电性连接结构58分别与整流发光二极管单元542c的第一导电型半导体层(图未示)以及542d的第二导电型半导体层(图未示)形成电性连接。此外，发光二极管单元540排列形成串接的封闭回路，整流发光二极管单元542a/542b/542c/542d则分别连接于上述封闭回路中相异的端点w/x/y/z。
图7A与图7B为上述发光二极管阵列芯片的电路示意图，其中箭号方向为发光二极管阵列芯片电流通入时的电流路径方向。如图7A所示，当电流由电极56a流入发光二极管阵列芯片500时，电流会流经整流二极管单元542a、封闭回路中部分的发光二极管单元540、整流二极管单元542c，并且由电极56b离开发光二极管阵列芯片500。相对于此，如图7B所示，当电流由56b流入发光二极管阵列芯片500时，电流会流经整流二极管542d、封闭回路中部分的发光二极管单元540、整流二极管542b，并且由电极56a离开发光二极管阵列芯片500。
图8为本发明实施例中发光二极管阵列芯片的另一电路示意图，如图8所示，发光二极管阵列芯片800中多个发光二极管单元82排列成多个串接封闭回路A/B，其中相邻封闭回路的电性串接方向相异，在本实施例中，封闭回路A以顺时针方向串接，封闭回路B以逆时针方向串接，且上述相邻的封闭回路A与封闭回路B之间至少具有一共用回路C。不仅如此发光二极管阵列芯片800还包含多个整流二极管单元84，分别与封闭回路A/B中相异的四个端点相连接，以提供整流功能。
以上所述的实施例仅为说明本发明的技术思想及特点，其目的在使本领域技术人员能够了解本发明的内容并据以实施，当不能以之限定本发明的专利范围，即大凡依本发明所揭示的精神所作的等同变化或修饰，仍应涵盖在本发明的专利范围内。

Claims (10)

1.一种用于高压交流电的发光元件，至少包含：
次载体；
至少一电子元件，位于该次载体上；
多个发光二极管阵列芯片，位于该次载体上，其中相邻二该发光二极管阵列芯片间具有间距，其中该间距大于100μm；
至少一焊垫，位于该次载体上；以及
导电线路，位于该次载体上，并且分别使该电子元件、该多个发光二极管阵列芯片、以及该焊垫形成电性连接；
其中任一该发光二极管阵列芯片包含多个发光二极管单元和四个整流二极管单元，其中该多个发光二极管单元排列成至少一串接的封闭回路，该四个整流二极管单元与该封闭回路形成电性连接，其中该四个整流二极管单元位于所述封闭回路外面并分别连接于所述封闭回路中相异的端点，
其中所述四个整流二极管单元与所述封闭回路有四个电性相接的端点，所述四个端点将所述封闭回路分成四个部分；在交流电的正半周期和负半周期中，电流都能流经所述封闭回路的三个部分。
2.如权利要求1所述的发光元件，其中该电子元件为至少一整流元件、电阻元件、电容元件或电感元件，其中该整流元件由具有低顺向电压与高逆向偏压的至少一单元组成，其中该具有低顺向电压与高逆向偏压的单元为整流二极管或肖特基二极管。
3.如权利要求1所述的发光元件，其中该发光二极管阵列芯片还包含至少一电极，其中该电极分别与至少一该整流二极管单元以及该导电线路形成电性连接。
4.如权利要求1所述的发光元件，其中该多个发光二极管串接排列成多个封闭回路，其中任选二相邻的封闭回路具有相异的串接方向，且该相邻的封闭回路具有共用部分。
5.如权利要求4所述的发光元件，其中所述四个整流二极管单元与所述多个封闭回路形成电性连接。
6.如权利要求5所述的发光元件，其中该发光二极管阵列芯片还包含至少一电极，其中该电极分别与该整流二极管单元以及该导电线路形成电性连接。
7.如权利要求1所述的发光元件，其中该多个发光二极管阵列芯片通过串联或并联形成100V至240V的电位降。
8.如权利要求1所述的发光元件，还包含反射层，位于该次载体上。
9.如权利要求1所述的发光元件，还包含波长转换层，位于该多个发光二极管阵列芯片上。
10.如权利要求1所述的发光元件，还包含封装胶材，位于该次载体上，并且至少覆盖该多个发光二极管阵列芯片。
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DE112009004359B4 (de) 2021-05-06
KR101784901B1 (ko) 2017-10-12
US20120049213A1 (en) 2012-03-01
CN104900637B (zh) 2018-07-13
KR20160095205A (ko) 2016-08-10
KR20110121627A (ko) 2011-11-07
KR102116359B1 (ko) 2020-05-29
DE112009004359T5 (de) 2012-05-24
CN101800219A (zh) 2010-08-11
WO2010088823A1 (zh) 2010-08-12
KR20170116211A (ko) 2017-10-18
CN102257619A (zh) 2011-11-23
CN102257619B (zh) 2015-05-13
US20150357371A1 (en) 2015-12-10
US9142534B2 (en) 2015-09-22

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