CN1828921A - 异质集成高压直流/交流发光器 - Google Patents
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Abstract
一个单片集成发光二极管发光装置,适合于直接应用于高压直流或交流电源。它由大量的电隔离的发光二极管构成,这些发光二极管位于透明的衬底上,并与在导热性能良好的基板上的导电元件连接。此外,在发光二极管之间的区域还可设置反射涂层。
Description
技术领域
本发明涉及一种发光装置,更具体地说,它是一种异质集成半导体器件发光装置,可以直接通过一个直流高电压或一个交流电压供电,以用于照明,指示或者显示等用途。
背景技术
基于III-V族氮化物(III-Nitride)的半导体(包括GaN,InN,AlN以及他们的合金)的发光二极管(LED)的发展,以全新的方式大大改变了照明技术。LED,直到最近,主要作为简单的显示灯用于电子和玩具方面,而现在,其具有巨大的潜力来取代白炽灯使用于多个方面,尤其是那些需要耐久性、密集性及方向性的应用场合(如交通,自动化,显示器及建筑照明等等)。与常规的发光装置相比,基于固态发光(SSL)的半导体LED具有诸多优点,如能量利用率更高,功耗小;具有更长的使用寿命,而只需要很低的维护费用;抗振动特性;可以发出鲜艳的饱和色光,此外,它还有可灵活进行照明设计的优点。预计到2025年,如果使用固态发光设施,美国每年可以大约可以节约525万亿瓦特的电能,也就是说一年大约可以节约350亿美元,此外人类的视觉感受也可以通过独立地调节发光二极管的亮度和色彩而得到增强。
常规的发光二极管,取决于半导体材料的特性,工作在一个非常低的直流电压(大约在一伏到五伏之间)及一个有限的电流下(不超过20毫安,只能产生较低的亮度,故只适用于指示灯。为了使发光二极管能达到作为普通照明使用的亮度,可以采用两种方法。第一种方法是发光二级光仍然工作在一个较低的直流电压下,但是它具有一个非常高的直流电流(大于一百毫安),这样它就可以达到一个较高的亮度。这种所谓的高能发光二级管需要一个笨重的变压器,一个电子控制器及一个驱动器来提供能量。在第二种方法中,许多串联连接的发光二极管集成在一个芯片中制成一个发光装置。它可以直接工作在一个高的直流输入电压下。取决于集成的发光二级管数目的多少,该发光装置的运行电压可以是12伏,24伏,110伏,240伏甚至更高的电压。此外,使用两条电流通路后,高压发光装置还可以直接工作在110/120伏或220/240伏交流电压下。这种高度集成的高压发光二极管装置尺寸介于几百个微米到几十个毫米之间。需要指出的是这种高度集成的单片高压发光装置与美国专利6,787,999所述的装置完全不同。在那项专利中,是把许多独立封装好的单个发光二极管用串接的方式焊接在一个PCB板上来制成一个体积庞大的发光二级管阵列,应用于高压场合。
集成在一个芯片上的发光二极管装置可以在高压直流电压或交流电压的条件下工作的新设想揭开了发光二极管在照明,指示及显示应用上的新篇章。例如,高压发光二级管可以直接用110伏供电,同时不需要任何的变压器。如果将高压的发光二极管组装在一个标准的爱迪生或欧式螺旋插头上,它可以直接安装在一个标准的发光灯泡插口内,用于室内或室外的照明。图1及图2说明了构建这样一个装置的原理,该原理是通过直接集成许多的发光二极管在一个芯片上而实现的。如说明所示,一个InGaAlN发光二极管构建在一个蓝宝石衬底或其它的绝缘衬底上。在先技术的常规低压直流二极管用数字10标示,该发光二极管10包括一个衬底12,一个n型的半导体层14,一个发光区16,及一个P型半导体层18,一个P触点20,一个N触点22,一个电流扩散层24。如图2所示,在现技术中的集成高压发光二极管装置用数字26标示。大量的发光二极管被串联到一起,这些发光二极管的串联方式是通过一个连接金属层28来把一个发光二极管10的P-层18与其相邻的另外一个发光二极管的N-层14连接起来。这样一个集成的发光二极管26有两个端子30及32用于接入一个输入电压。光34穿过半透明的电流扩散层24,从半导体外沿层18发出。
在先技术的集成发光二极管存在好几个问题,包括发光效率低,不易散热,功率低,及可靠性方面的问题。每一个独立的发光二极管10与其它发光二极管的隔离是通过刻蚀N型半导体层14到绝缘衬底12的表面来实现的。对于基于InGaAlN的发光二极管,这样的刻蚀深度大约为两微米到六微米之间。深槽36增加了覆盖金属层28到相互连接的每一个发光二极管10上的难度。一个不连续的或薄金属层28可能会导致在槽侧壁38上泄漏或连接中断,这将会导致产品性能、合格率及可靠性下降。
对于一个基于InGaAlN的发光二极管设备来说,蓝宝石是最常用的衬底,同时由于蓝宝石的高绝缘特性,因此它成为高压发光二极管设备的一个最佳选择。遗憾的是,蓝宝石只具有一个非常低的导热性能及有限的散热性能,降低了高压(或高功率)发光二极管设备的性能及使用寿命。现有技术的另一个缺点是从外延层发出的光,很大一部分被金属层阻挡或吸收,包括P接触点20、N接触点22、金属层28及电流扩散层24,这限制了发光的效率。
发明内容
本发明提供一种以III-V族氮化物半导体为基础的改进的高压DC/AC发光装置,该发光装置是把LED阵列通过覆晶(倒扣)焊接或其他固定方式集成在一个有源或无源的基板上。该基板可以是氮化铝,氮化硼或其他相类似的物质,只要它们既具有良好的绝缘特性以及热传导性。基板包括覆晶凸点,用来焊接发光二极管阵列并增强热散发性及促进光的发射。基板还包括无源电路,用来串联分离的发光二极管阵列,并提供限流保护。同时,基板还可以是硅制成,一面是一个有源的控制电路,另一面是用来连接发光二极管阵列的金属层和绝缘层。最终的产品有两个或更多的端子用来提供电源输入或提供控制信号。它的电源可以是12伏,24伏,或其它等级的直流电压,它也可以使用交流电压供电如110/120伏或220/240伏。发出的光可以是白色光,单色光,多色光或随时间变化颜色也发生变化的光。
附图说明
图1是一个在先技术的发光二极管的横截面图。
图2是一个在先技术发光二极管阵列的横截面图。
图3是使用覆晶焊接的高压发光设备的横截面图。每个独立的发光二极管通过基板互相连接。
图4是一个高压直流发光二极管的概略图。
图4是一个高压交流发光二极管的概略图。
图6是带有一个无源保护电路的图3设备的一个横向截面图。
图7是使用覆晶焊接的高压发光设备另一实例的横截面图。它带有一个集成电路用于保护,控制,驱动发光二极管阵列。
图8是三种单色组合的发光二极管阵列的概略图,这些发光二极管阵列并联在一起。
图9是三种单色组合的发光二极管阵列的概略图,这些发光二极管阵列串联在一起。
具体实施方式
如图3所示,一个芯片大小的高压直流交流发光装置用数字100来标示。高压直流交流发光装置的构建方式是将衬底104上横向导通的InGaAlN发光二极管阵列102,通过覆晶焊接或其他连接方式异质集成在基板106上。衬底104可以是透明,半透明,或具有类似透光性的特性,使光线能从衬底上透出。衬底可以是一个绝缘材料,如蓝宝石(三氧化二铝)、炭化硅、硅、砷化镓。半导体外延层通过覆晶焊被焊接到基板106,这样光就能从发光二极管阵列102的衬底104透出。在衬底104上相互隔离的LED110通过基板106上的金属连接124串联起来。本发明将更多的金属层从发光二极管阵列中移到子基板上,可以提高装置的透光率。同样的道理,P-N结、异质结、多量子势阱、有机场致发光、聚合物场致发光、紫外线(四百-三百毫米)、及远紫外(三百-两百亳米)发光二级管、及其他类型的发光二级管都可以按照上文所述的方式进行装配。
发光二极管阵列102可以使用标准的集成芯片制造技术制作在衬底104上。相邻发光二极管110之间有一条深槽108一直刻蚀至衬底104,使各个LED相互电隔离。每个LED110通常是台面形的,它包括一个N层112,一个发光层114,一个P层116,一个N触点118,一个P触点120。相邻的发光二极管110通过覆晶焊点122连接到金属层124上,金属层124制作在基板106上。金属层124把一个发光二极管的P触点120与其相邻发光二极管的N触点118连接起来,从而使整个LED阵列通过基板106串联起来。端子126和128在发光二极管阵列102的每一端提供了电源连结点。覆晶焊点可以是焊剂,如铅/锡(Pb/Sn)或金/锡(Au/Sn),或者其它金属如金(Au)或铟(In)。
LED阵列102的性能及使用寿命取决于PN结的温度。对于高压应用场合,热散发可能会变得更加困难。如果不能够充分地散发热量,可能导致设备性能受损或导致提前报废。基于InGaAlN的半导体的外延层生长在一个蓝宝石衬底上,蓝宝石衬底是制造一个高压直流交流发光装置的理想选择,因为它具有良好的绝缘特性,然而,蓝宝石只有很低的热传导性能。为了增加发光装置100的热性能,将LED阵列102与基板106相联,基板106可以是氮化铝,氮化硼,或其他相近材料,这些材料都具有良好的热传导性及高电阻,所以每个阵列102中的LED110的PN结所产生的热量就可以轻易的通过焊点112及金属124层转移到子基板106上并散发到外壳上(在图中未显示)。
光130从衬底104发出。P触点120可以是镍/金金属层,或并入一个高反射金属层,把向基板106发射的光反射回衬底层104。例如,一个厚度不超过十纳米的薄的透明镍/金金属层可以首先沉积并退火后形成p-GaN层的电接触层,而一个较厚(例如大于100纳米)的银或其他金属层可以沉积在镍/金金属层上以形成一个高反射率的反射镜。在深槽108中,一个透明的电介质/银堆积层可以被沉积下来,作为一个高度反射镜,该透明电介质也同时作为深槽108表面的钝化层。如果深槽108中没有使用一个反射性金属,则可以使用一个低折射率的电介质材料如氧化硅来作为表面钝化层。
从图4可知,对于一个直流电输入源,阵列102中串联的发光二极管的数目取决于输入的直流电压。例如,如果每一个LED110的运行电压为3伏特,而输入电压为12伏,这样就可以在直流电源的输入端串联接入4个LED110。为了增加亮度,可以将两个或更多个LED阵列102并联到直流电源的输入端。
如图5所示,对于一个交流电压源来说,阵列102及103中串联的发光二极管110的数目则取决于输入的交流电压。例如,如果一个LED110的运行电压为3伏,而输入交流电压为120伏,则可以在每个阵列102或103的交流电源输入上接上40个发光LED110。如图所示,发光LED阵列102可以在交流电的半周期内导通,而发光二极管阵列103则在交流电的另一个半周期内导通。流过阵列102的电流的方向如105所示,而流过阵列103的电流方向如107所示。第二个以串联形式串接的LED阵列103与第一个阵列102以相反的方向并连接到交流输入上。对于一个60赫兹供电的电源来说,发光二极管阵列将会每秒钟变换导通60次,而对于一个50赫兹的电源来说就是50次。
如图6所示,一个LED阵列102可以加入一个无源保护电路202。因为LED的电阻非常低,输入电压的变化,如电压尖峰,就会使发光二极管阵列102发生过流,从而降低它的性能和使用寿命。集成的无源保护电路202可以用来减少或减弱电压波动。无源保护电路202包括一个限流电阻,该电阻直接沉积在基板106上;无源保护电路202也可以是一个安装在基板上的表面装配电阻。无源保护电路202还可能包括一个正温度系数(PTC)热敏电阻来保护LED阵列102,防止过流的情况出现。在正常的运行条件下,PTC热敏电阻保持在一个低电阻状态下,不会对装置的电流产生很大影响。当过流出现时,PTC热敏电阻就会切换到一个高阻抗的状态,这时,它就会限制流过LED102的电流到一个正常的运行水平。当高电流状态消失后,PTC热敏电阻就会复位到低电阻状态,并允许一个正常运行的电流流过LED102。
图7所示的是另外一个芯片大小的高压直流交流发光装置的实例,该装置用数字300标示。高压交直流发光装置300包括一个建造在衬底104上的电绝缘层312上的InGaAlNLED阵列102,该LED阵列102通过覆晶焊接或其他连接方式连接到基板302。衬底104可由电传导材料(如硅或碳化硅衬底)或其他材料制成。在衬底104和LED阵列102之间是电绝缘层312,它可采用高阻的GaN,AlN、InGaAlN、Al203、Si,或其他电绝缘材料。在制作LED阵列102时,相邻LED之间的电绝缘是通过刻蚀到电绝缘层312来实现的,而不是刻蚀到电传导衬底104。焊接凸点122连接到金属层124上,而金属层则覆盖在薄绝缘层304上。绝缘层304可以是氧化硅或氮化硅,或其他电绝缘材料。基板302可采用铜,铝或硅制成的,此外它还可包括一个控制及驱动电路306,通过连线308来控制LED阵列102。反射层310可以沉积在深槽区域108内及P触点层120上,以改善装置300的透光率。
如图8及图9所示,多个LED阵列发光器102可以集成在同一个基板320上。不同颜色(如蓝色,绿色,红色)的发光二极管芯片322,324及326,由集成在基板320上的电路来连接并控制。发光二极管阵列102可采用并联连接(如图8)或者串联连接(如图9)。将蓝色322,绿色324及红色326三种发光二极管发出的光混合就可以得到一个发出白色光的交直流发光装置。每个发光二极管阵列可独立地控制以实现所需要的亮度或色彩混合。混合光可以被平衡调节用来产生白色光或彩色光,它的颜色取决于混合参数及控制。集成控制还可以产生一个随时间变化颜色发生变化的光。当串联时(图9),三种颜色的LED的数量改变,就可以实现需要的白色光。
另一个产生白光的方法就是使用由III-V族氮化物制成的蓝色LED来产生蓝色光,然后在衬底层或装置外壳内表面涂上黄磷。使用黄色荧光粉可以将部分短波长蓝色光转换为黄光的波长。当将两种色彩进行合理的混合调配时,就可以得到肉眼可见的白色。还可以使用紫外(UV)或近紫外线发光二极管激发三种颜色的荧光粉(红,蓝,绿)产生一个白色的光源。
Claims (44)
1.一个发光装置包括:
一个位于衬底上的相互电隔离的LED阵列,每个所述的LED都具有一个P极和N极;
一个带有导电元件阵列的基板,所述的电隔离的LED阵列连接到基板的导电元件阵列上;
连接端子,使所述导电元件阵列与一个电源相联;
所述的导电元件阵列使相互电隔离的LED的P极和与其相邻的LED的N极相连,从而使所述阵列中的LED串联。
2.如权利要求1所述的发光装置,其特征在于:所述的衬底透明。
3.如权利要求1所述的发光装置,其特征在于:所述的基板具有热传导特性。
4.如权利要求1所述的发光装置,其特征在于:所述的基板是一种热传导材料,从氮化铝,氮化硼,铜,铝,或硅中选择。
5.如权利要求1所述的发光装置,其特征在于:所述的基板包括一个限流电路,它连接在所述端子和所述导电元件阵列之间。
6.如权利要求1所述的发光装置,其特征在于:所述的基板包括一个控制电路,它连接在所述的一个或多个端子和所述导电元件阵列之间。
7.如权利要求1所述的发光装置,其特征在于:还包括一个反射材料,它沉积在相邻的LED之间。
8.如权利要求1所述的发光装置,其特征在于:还包括一种反射材料,它沉积在所述的P极上。
9.如权利要求1所述的发光装置,其特征在于:还包括一种电绝缘材料,它固定在上述的基板上,位于基板和导电元件阵列之间。
10.如权利要求9所述的发光装置,其特征在于:所述的基板是导电的。
11.如权利要求1所述的发光装置,其特征在于:所述的发光二极管是半导体PN结,半导体异质结,半导体量子陷阱,有机场致发光材料、聚合场致发光材料、远紫外,紫外,红,绿,蓝,黄及白色的LED。
12.如权利要求1所述的发光装置,其特征在于:还包括一种绝缘材料层,它位于所述的电隔离的发光二极管和衬底之间。
13.如权利要求12所述的发光装置,其特征在于:所述的衬底是导电的。
14.如权利要求1所述的发光装置,其特征在于:电隔离的发光二极管阵列通过覆晶焊接到所述基板的导电元件阵列上。
15.一个发光装置,包括:
一组位于衬底上的相互电隔离的LED阵列,每个所述的发光二极管都具有一个P极和N极;
一个有导电元件阵列的基板;
所述的相互电隔离的LED阵列连接到基板的导电元件上;
及连接端子,连接上述导电元件阵列与一个电源;
所述的导电元件阵列使所述每个发光二极管的P极和与其相邻的发光二极管N极的连接,使所述阵列中的LED被顺序串联起来,形成所述的电流流动方向,一旦与电源连接,就可发出光。
16.如权利要求15所述的发光装置,其特征在于:还包括:
位于衬底上的相互电隔离的第二组LED阵列,每个所述的LED都具有一个P极和N极;
位于基板上第二组导电元件阵列;
所述的电隔离的第二组LED阵列与基板上的导电元件连接;
所述的第二组导电元件阵列使第二组LED阵列的每个LED的P极和与其相邻的LED的N极连接,从而使第二组LED阵列中的LED串联连接,形成第二个电流流动力向;
所述的第二组导电元件阵列与所述的连接端子与一个电源相连,一旦通电,就可发光。
17.如权利要求16所述的发光装置,其特征在于:所述的第二组导电元件阵列以与第一组导电元件阵列相反的方向并联到所述的端子上。
18.如权利要求17所述的发光装置,其特征在于:所述的第二个方向的电流与所述的第一个电流方向相反,这样在每半个周期中交替导通并发光。
19.如权利要求16所述的发光装置,其特征在于:所述的第二组导电元件阵列以与所述的第一组导电元件阵列串联的方式连接到端子上。
20.如权利要求16所述的发光装置,其特征在于:所述的第二组阵列中相互电隔离的LED所发出的光与第一组阵列中相互电隔离的LED所发出的光颜色不同。
21.如权利要求16所述的光源,其特征在于:所述的LED可以是半导体PN结,半导体异质结,半导体量子陷阱,有机场致发光材料、场致聚合物材料、发出远紫外、紫外、红、绿,蓝,黄或白色光的LED。
22.如权利要求16所述的发光装置,其特征在于:还包括一种反射材料,它沉积在所述的相邻的发光二极管之间。
23.如权利要求16所述的发光装置,其特征在于:还包括一种反射材料,它沉积在所述的P极上。
24.如权利要求16所述的发光装置,其特征在于:所述的第一阵列衬底及所述的第二阵列的衬底是透明的。
25.如权利要求16所述的发光装置,其特征在于:所述的基板是一种热传导材料,该热传导材料是氮化铝,氮化硼,铜,铝,或硅。
26.如权利要求16所述的发光装置,其特征在于:所述的基板包括一个限流装置,它连接在所述的一个或多个端子和所述导电元件阵列之间。
27.如权利要求16所述的发光装置,其特征在于:所述的基板包括一个控制电路,它连接在上述的一个或多个端子和所述导电元件阵列之间。
28.如权利要求16所述的发光装置,其特征在于:还包括一种绝缘材料层,它位于所述的基板和导电元件之间。
29.如权利要求28所述的发光装置,其特征在于:所述的基板是导电的。
30.如权利要求16所述的发光装置,其特征在于:还包括一种绝缘材料层,它位于所述的第一组电隔离的发光二极管阵列和第一衬底之间,以及第二组电隔离的发光二极管阵列和第二衬底之间。
31.如权利要求30所述的发光装置,其特征在于:衬底是导电的。
32.如权利要求16所述的发光装置,其特征在于:第一组及第二组电隔离的发光二极管阵列通过覆晶焊接到所述基板上的导电元件阵列上。
33.一个发光装置,包括:
位于一个衬底上并相互电隔离的第一块LED阵列,每个所述的LED都具有一个P极和N极;
位于另一衬底上并相互电隔离的第二块LED阵列,每个所述的发光二极管都具有一个P极和N极;
位于另一衬底上并相互电隔离的第三块LED阵列,每个所述的发光二极管都具有一个P极和N极;
一个带有导电元件阵列的基板;
以及用于把所述的导电元件阵列连接到电源的端子;
所述的第一、第二、第三块阵列与所述的导电元件阵列连接;
所述的导电元件阵列使所述的各个阵列中相互电隔离的LED的P极和与其相邻LED的N极的连接,这样上述阵列中的发光二极管就可以被串联起来,一旦端子接上电源后就可以发光。
34.如权利要求33所述的发光装置,其特征在于:第一块LED阵列发出的光与第二块LED阵列和第三块LED阵列的发光二极管所发出的光不同。
35.如权利要求34所述的发光装置,其特征在于:所述的第二块LED阵列的发光二极管所发出的光与第三块LED阵列的发光二极管所发出的光不同。
36.如权利要求33所述的发光装置,其特征在于:还包括一个控制电路,用来独立地控制每块LED阵列的发光二极管。
37.如权利要求33所述的发光装置,其特征在于:所述的每一块LED阵列包括与所述的导电元件连接的第一组发光二极管,其具有第一电流方向;以及与所述的导电元件连接的第二组发光二极管阵列,其具有第二电流方向。
38.如权利要求37所述的发光装置,其特征在于:所述的第一组发光二极管与第二组发光二极管并联连接。
39.如权利要求38所述的发光装置,其特征在于:所述的第一电流方向与第二电流方向相反。
40.如权利要求33所述的发光装置,其特征在于:所述的电源为110伏交流电源。
41.如权利要求33所述的发光装置,其特征在于:所述的电源为220伏交流电源。
42.如权利要求33所述的发光装置,其特征在于:所述的电源为12伏直流电源。
43.如权利要求33所述的发光装置,其特征在于:所述的衬底是透明的。
44.如权利要求33所述的发光装置,其特征在于:所述的LED可以是半导体PN结,半导体异质结,半导体量子陷阱,有机场致发光材料、场致聚合物材料、发出远紫外、紫外、红、绿,蓝,黄或白色光的LED。
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