JP2007305708A - 半導体発光素子アレイおよびこれを用いた照明用器具 - Google Patents
半導体発光素子アレイおよびこれを用いた照明用器具 Download PDFInfo
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- JP2007305708A JP2007305708A JP2006131200A JP2006131200A JP2007305708A JP 2007305708 A JP2007305708 A JP 2007305708A JP 2006131200 A JP2006131200 A JP 2006131200A JP 2006131200 A JP2006131200 A JP 2006131200A JP 2007305708 A JP2007305708 A JP 2007305708A
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- semiconductor light
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 174
- 238000005286 illumination Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 15
- 239000000370 acceptor Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/06—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
- F21V3/061—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material being glass
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Abstract
【解決手段】それぞれがn−GaN層2、活性層3、およびp−GaN層4を有する複数の半導体発光素子Edを備えた半導体発光素子アレイAであって、複数の半導体発光素子Edは、SiCからなる基板1上に形成されており、基板1のうち複数の半導体発光素子Edが搭載された面とは反対側の面が、光出射面1aとされている。
【選択図】 図1
Description
B 電球(照明用器具)
Ed 半導体発光素子
Ge1,Ge2 半導体発光素子群
t 距離
1 基板
2 n−GaN層(n型半導体層)
3 活性層
4 p−GaN層(p型半導体層)
5 素子間配線
6 溝
6a 底部
1a 光出射面
11 SiC色変換層
12 n−SiC層
13 バッファ層
14 p−GaN層(追加のp型半導体層)
15 端子
21 n側電極
41 p側電極
71 絶縁膜
81 口金(接続部)
82 ガラス球体
83 金属部材
Claims (8)
- それぞれがn型半導体層、活性層、およびp型半導体層を有する複数の半導体発光素子を備えた半導体発光素子アレイであって、
上記複数の半導体発光素子は、SiCからなる基板上に形成されており、
上記基板のうち上記複数の半導体発光素子が搭載された面とは反対側の面が、光出射面とされていることを特徴とする、半導体発光素子アレイ。 - 上記基板と上記複数の半導体発光素子との間には、SiCを含む色変換層が設けられている、請求項1に記載の半導体発光素子アレイ。
- 上記各半導体発光素子は、上記基板側から順に上記n型半導体層、上記活性層、および上記p型半導体層が積層された構成とされており、
上記複数の半導体発光素子のうち隣り合うものどうしは、その底部が上記n型半導体層よりも上記基板側に位置するものとされた溝によって区画されている、請求項1または2に記載の半導体発光素子アレイ。 - 上記基板と上記n型半導体層との間に追加のp型半導体層が介在している、請求項3に記載の半導体発光素子アレイ。
- 上記複数の半導体発光素子どうしを導通させ、かつ上記基板の厚さ方向視において上記活性層の少なくとも一部を覆う金属製の素子間配線をさらに備える、請求項1ないし4のいずれかに記載の半導体発光素子アレイ。
- 上記活性層と上記基板との間に位置し、かつSiCを含む層とSiCとは屈折率が異なる層とが接している境界面を有しており、
上記活性層と上記境界面との距離tが、上記活性層から発せられる光の波長をλとした場合に、t=a×λ/2n×(1±x)(ただし、aは整数、nはn型半導体層の屈折率、x≦10%)を満たすものとされている、請求項1ないし5のいずれかに記載の半導体発光素子アレイ。 - 上記複数の半導体発光素子に対して電源供給するための1対の端子を備えており、
上記複数の半導体発光素子は、いずれもが上記1対の端子間に直列に接続されており、かつ互いの順方向が逆である2組の半導体発光素子群を含んでいる、請求項1ないし6のいずれかに記載の半導体発光素子アレイ。 - 請求項1ないし7のいずれかに記載の半導体発光素子アレイと、
上記半導体発光素子アレイの上記基板に接しており、かつ上記半導体発光素子アレイを支持する金属部材と、
外部電源から電源供給を受け、かつ機械的に保持されるための接続部と、
を備えることを特徴とする、照明用器具。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006131200A JP2007305708A (ja) | 2006-05-10 | 2006-05-10 | 半導体発光素子アレイおよびこれを用いた照明用器具 |
US11/801,258 US7501662B2 (en) | 2006-05-10 | 2007-05-09 | Semiconductor light emitting element array illuminator using the same |
CNB2007101022898A CN100524791C (zh) | 2006-05-10 | 2007-05-10 | 半导体发光元件阵列及使用它的照明器 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2006131200A JP2007305708A (ja) | 2006-05-10 | 2006-05-10 | 半導体発光素子アレイおよびこれを用いた照明用器具 |
Publications (1)
Publication Number | Publication Date |
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JP2007305708A true JP2007305708A (ja) | 2007-11-22 |
Family
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JP2006131200A Pending JP2007305708A (ja) | 2006-05-10 | 2006-05-10 | 半導体発光素子アレイおよびこれを用いた照明用器具 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7501662B2 (ja) |
JP (1) | JP2007305708A (ja) |
CN (1) | CN100524791C (ja) |
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JP2009267164A (ja) * | 2008-04-25 | 2009-11-12 | Kyocera Corp | 発光デバイスおよび発光デバイスの製造方法 |
JP2010021268A (ja) * | 2008-07-09 | 2010-01-28 | Ushio Inc | 発光装置 |
JP2010021202A (ja) * | 2008-07-08 | 2010-01-28 | Ushio Inc | 発光装置 |
JP2010027645A (ja) * | 2008-07-15 | 2010-02-04 | Ushio Inc | 発光装置及び発光装置の製造方法 |
KR101138952B1 (ko) * | 2010-09-24 | 2012-04-25 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
JP2014099508A (ja) * | 2012-11-14 | 2014-05-29 | Stanley Electric Co Ltd | 発光装置及びその製造方法 |
KR20160123316A (ko) * | 2014-02-14 | 2016-10-25 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전 반도체 소자를 제조하기 위한 방법 및 광전 반도체 소자 |
JP2016195234A (ja) * | 2015-03-31 | 2016-11-17 | 株式会社沖データ | 半導体素子アレイ、ledヘッド、及び画像形成装置 |
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JP2009267164A (ja) * | 2008-04-25 | 2009-11-12 | Kyocera Corp | 発光デバイスおよび発光デバイスの製造方法 |
JP2010021202A (ja) * | 2008-07-08 | 2010-01-28 | Ushio Inc | 発光装置 |
JP2010021268A (ja) * | 2008-07-09 | 2010-01-28 | Ushio Inc | 発光装置 |
JP2010027645A (ja) * | 2008-07-15 | 2010-02-04 | Ushio Inc | 発光装置及び発光装置の製造方法 |
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JP2014099508A (ja) * | 2012-11-14 | 2014-05-29 | Stanley Electric Co Ltd | 発光装置及びその製造方法 |
KR20160123316A (ko) * | 2014-02-14 | 2016-10-25 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전 반도체 소자를 제조하기 위한 방법 및 광전 반도체 소자 |
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KR102305162B1 (ko) | 2014-02-14 | 2021-09-28 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전 반도체 소자를 제조하기 위한 방법 및 광전 반도체 소자 |
JP2016195234A (ja) * | 2015-03-31 | 2016-11-17 | 株式会社沖データ | 半導体素子アレイ、ledヘッド、及び画像形成装置 |
US11824141B2 (en) | 2018-10-05 | 2023-11-21 | Seoul Viosys Co., Ltd. | Light emitting device |
Also Published As
Publication number | Publication date |
---|---|
US7501662B2 (en) | 2009-03-10 |
CN101071821A (zh) | 2007-11-14 |
US20070262323A1 (en) | 2007-11-15 |
CN100524791C (zh) | 2009-08-05 |
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