WO2010088823A1 - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
WO2010088823A1
WO2010088823A1 PCT/CN2009/074422 CN2009074422W WO2010088823A1 WO 2010088823 A1 WO2010088823 A1 WO 2010088823A1 CN 2009074422 W CN2009074422 W CN 2009074422W WO 2010088823 A1 WO2010088823 A1 WO 2010088823A1
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WO
WIPO (PCT)
Prior art keywords
light
diode
emitting element
emitting
red
Prior art date
Application number
PCT/CN2009/074422
Other languages
English (en)
French (fr)
Inventor
陈昭兴
洪详竣
王希维
梁立田
范进雍
锺健凯
谢明勋
Original Assignee
晶元光电股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光电股份有限公司 filed Critical 晶元光电股份有限公司
Priority to KR1020177027521A priority Critical patent/KR102116359B1/ko
Priority to CN200980145677.1A priority patent/CN102257619B/zh
Priority to US13/148,544 priority patent/US9142534B2/en
Priority to DE112009004359.3T priority patent/DE112009004359B4/de
Priority to KR1020167021072A priority patent/KR101784901B1/ko
Publication of WO2010088823A1 publication Critical patent/WO2010088823A1/zh
Priority to US14/829,262 priority patent/US10038029B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Definitions

  • the present invention discloses a light-emitting element, and more particularly to a light-emitting element comprising at least one electronic component and at least one light-emitting diode array chip on a secondary carrier and directly usable for alternating current. Background technique
  • LED light-emitting diode
  • This principle of illumination is different from that of incandescent lamps. Principle, therefore LEDs are called cold light sources.
  • LEDs have the advantages of high durability, long life, light weight, low power consumption, etc. Therefore, the current lighting market has high hopes for LEDs, and it is regarded as a new generation of lighting tools, which has gradually replaced traditional light sources and applications. In various fields, such as traffic signs, backlight modules, street lighting, medical equipment, etc.
  • an LED lighting element 100 that is known to be usable for an AC power source includes a submount 10, an LED array chip 12 on the sub-carrier 10, and electrical properties with the LED array chip 12 described above.
  • the at least one bonding pad 14 is connected to the LED array chip 12, and the LED array chip 12 includes at least one substrate 120 and a plurality of LED units 122 on the substrate 120.
  • the LED lighting element 100 If the above-mentioned LED lighting element 100 known to be used for an AC power source is directly substituted for a general lighting device, the LED lighting element 100 must operate in a high voltage environment of 100 volts to 240 volts, and a light emitting diode that is in operation for a long time.
  • the lighting element 100 is prone to problems of excessive temperature.
  • electronic components tend to generate an electron migration effect, and the so-called “electromigration effect” refers to the effect of temperature and electron wind multiplication. The movement of metal ions caused. In general, the higher the temperature, the more likely the electromigration of metal ions occurs.
  • the electron current diffuses from the electrode to the active region at a high temperature, and electrode materials such as indium tin oxide (ITO) and silver are easily electromigrated.
  • electrode materials such as indium tin oxide (ITO) and silver are easily electromigrated.
  • solder or fine metal bonds may also cause voids due to electromigration effects, which in turn leads to voids. The component is broken.
  • the high temperature, high current (voltage) operating environment greatly reduces the reliability of the LED lighting elements that can be used for AC power.
  • the main object of the present invention is to provide a light-emitting element comprising at least a submount, at least one electronic component on the secondary carrier, and at least one light emitting diode array chip on the secondary carrier, wherein the at least one The LED array chip is electrically connected to the electronic component.
  • the above-mentioned electronic component can be a passive component such as a rectifying unit, a resistor unit, a capacitor unit or an inductive unit for improving the efficiency of the light-emitting element.
  • the present invention discloses a light-emitting element having at least one light-emitting diode array chip therein, and the light-emitting diode array chip comprises a multi-light-emitting diode unit connected in series or in parallel.
  • the present invention discloses a light-emitting element having at least one light-emitting diode array chip therein, and the light-emitting diode array chip comprises a plurality of light-emitting diode units and arranged in a series of closed loops.
  • the present invention describes a light-emitting element having at least one light-emitting diode array chip therein, and the light-emitting diode array chip includes a plurality of light-emitting diode units, and the plurality of light-emitting diode units are arranged in a plurality of series closed loops, wherein Any two adjacent closed loops have different tandem directions, and the adjacent closed loop has a common portion.
  • a light-emitting element comprising: at least: a secondary carrier; at least one electronic component on the secondary carrier; at least one blue light-emitting diode array chip on the secondary carrier; at least one a red LED chip on the sub-carrier; and a conductive line on the sub-carrier, and respectively electrically connecting the electronic component, the blue LED array chip, and the red diode chip .
  • 1 is a schematic view showing the structure of an LED lighting element known to be usable for an AC power source.
  • 2A is a schematic top view showing the structure of the embodiment of the present invention.
  • 2B is a schematic side view showing the structure of the embodiment of the present invention.
  • 2C is a schematic side view showing another embodiment of the present invention.
  • FIG 3 is a schematic top view of a further embodiment of the present invention.
  • FIG. 4 is a side view showing the structure of an LED array chip of the present invention.
  • 5A to 5D are schematic views showing a manufacturing process of an LED array chip in accordance with an embodiment of the present invention.
  • FIG. 6 is a schematic top view showing the structure of an LED array chip according to an embodiment of the present invention.
  • 7A and 7B are circuit diagrams of an LED array chip in accordance with an embodiment of the present invention.
  • FIG. 8 is another schematic circuit diagram of an LED array chip according to an embodiment of the present invention. Description of the reference numerals
  • LED unit 542 rectifier diode unit
  • the present invention discloses a light emitting element.
  • the light-emitting element 200 includes at least a submount 20, at least one of which is located.
  • the conductive traces 28 are electrically connected in series or in parallel to the electronic component 22, the LED array chip 24, and the pad 26; wherein, any two adjacent LED array chips 24 have a pitch D and a pitch therebetween.
  • D is greater than ⁇ ; preferably greater than ⁇ ; and the pad 26 is electrically connected to an alternating current power supply (not shown), wherein the alternating current power supply provides a high-voltage alternating current of 100V to 240V in the general household to the light-emitting element 200. .
  • the electronic component 22 described above may be at least one unit selected from the group consisting of passive elements such as resistors, capacitors, and inductors.
  • the light-emitting element 200 of the present invention also includes a reflective layer 21 on the secondary carrier 20 for reflecting light emitted by the LED array chip 24.
  • the sub-carrier 20 further has a cup-shaped recessed structure 29 for accommodating the above-mentioned electronic component 22 or the LED array chip 24; further, the above-mentioned illuminating component 200 further includes a wavelength conversion layer 23 on the LED array chip 24 and the second The encapsulant 25 on the carrier 20 and covering at least the LED array chip 24 described above.
  • FIG. 3 is a schematic top view of another embodiment of the present invention, as shown in FIG.
  • the 300 includes at least a secondary carrier 30, a rectifying element 31 on the secondary carrier 30, and a plurality of secondary carriers
  • the LED array chip 32 on the body 30, at least one resistor 34 in series with the LED array chip 32 on the sub-carrier 30, at least one capacitor 36 on the sub-carrier 30 and the LED array chip 32 and the resistor 34 in series, at least A pad 38 on the sub-carrier 30, and a conductive line 39 on the sub-carrier 30 are used to electrically connect the rectifying element 31, the LED array chip 32, the capacitor 34, and the resistor 36 to the pad 38;
  • the rectifying element 31 includes at least one bridge rectifying circuit in which diode units having a low on-voltage and a high reverse bias are arranged, and the sinusoidal alternating current (AC) conversion provided by the AC power supply is performed by the rectifying element 31
  • the diode unit having a low turn-on voltage and a high reverse bias may be a Zen
  • any two adjacent LED array chips 32 have a pitch greater than ⁇ , preferably a pitch greater than ⁇ ; further, the pad 38 is electrically connected to an AC power supply (not shown), wherein the above The AC power supply (not shown) is supplied to the above-mentioned light-emitting element 300 as a high-voltage AC power source of 100 V to 240 V in general households.
  • the LED array chip 400 includes a substrate 40 and a plurality of light-emitting diode units 42 on the substrate 40. At least two electrodes 44 on the substrate 40, and an electrical connection structure 46 for electrically connecting the plurality of LED units 42 and the electrodes 44 in a co-directional series or parallel manner; wherein the connection structure 46 may be metal a wire or a metal layer, and the electrode 44 is electrically connected to the conductive line on the sub-carrier of the light-emitting element of the present invention (not shown); otherwise, the LED array chip 400 can control the light-emitting diode
  • the number and connection of the units 42 allows the LED array chip 400 itself to have a particular operating voltage.
  • the characteristics of the voltage can be flexibly designed by the above-mentioned LED array chip, and the design of the plurality of LED array chips 400 in series can make the light-emitting component of the invention conform to the voltage condition of 100V to 240V for general household use.
  • the application of the 110 volt AC power system applied to a general illumination system is a matrix of 2 ⁇ 2 arrays (as shown in FIG. 3), at least one of which is
  • the LED array chip 32 includes an indium gallium nitride (InGaN) light emitting layer to emit blue light having a peak wavelength ranging from 440 to 480 nm (defined as a blue light diode array chip); and at least one light emitting diode array Chip 32 contains inscribed aluminum gallium The red light of the meter (defined as the red light diode array chip).
  • InGaN indium gallium nitride
  • a wavelength conversion layer (defined as a yellow phosphor) that absorbs the emitted blue light wavelength and converts it into a yellow wavelength with a peak wavelength ranging from 570 to 595 nm, such as a commercial YAG or TAG fluorescence, on a blue LED array chip.
  • Powder (as shown in Figure 2C), emitting white light in a mixture.
  • the number of the blue and/or red photodiode array chips, the chip area of the blue and/or red photodiode array chip, or the blue light may be adjusted.
  • Embodiment AC power system blue light diode array blue light diode single red light diode array red light diode single number system chip number Number of column chips Quantity 1 AC 110V 2 12 2 6 2 AC 110V 3 8 1 12 3 AC 220V 2 24 2 12 4 AC 220V 3 16 1 24
  • the second embodiment of the above table is a warm white light (warm) according to the present invention.
  • the light-emitting element of white wherein the ratio of the light-emitting power of all the blue-light diode array chips to the light-emitting power of all the red light-emitting diode array chips is about 3:1.
  • the number of the light-emitting elements including the blue light and the red light-emitting diode array chip is, for example, three or one each.
  • the number of LED units (defined as blue diode units) connected in series in the blue LED array chip is 8 units, and the number of LED units (defined as red diode units) connected in series in the red LED array chip is 12 units. Therefore, the ratio of all blue-light diode cells of the light-emitting element to all red-light diode cells is 24:12 or 2:1.
  • each of the blue and red photodiode array chips is a 24 volt high voltage DC array chip, and an integral 2x2 matrix formed in series is a 96 volt load.
  • the above-mentioned light-emitting elements emit a blue light and red light power ratio of about 3:1.
  • the matrix is connected in series to a predetermined resistor and the aforementioned rectifying element having a bridge rectifier circuit to form a light-emitting element for a 110V AC power system.
  • all blue LED array cores The ratio of the illuminating power of the chip to all red photodiode array chips is about 2 to 4, preferably 2.6 to 3.4; or the ratio of the number of all blue and red photodiode units of the illuminating element is about 4/
  • the warm color white light is formed by controlling the color temperature range from 2000 to 5000K; preferably, the warm white light has a color temperature range of 2000 3500 ⁇ .
  • the red LED array chip may also be replaced by a plurality of non-array red photodiode chips connected in series, and the number of chips of the plurality of non-array red photodiode chips connected in series The same as the number of red photodiode units of the replaced red photodiode array chip; wherein each of the non-array red photodiode chips has only one of the red photodiode units, and the forward bias value thereof It is about 2 volts.
  • 5A to 5D are schematic diagrams showing a manufacturing process of another LED array chip. As shown
  • a substrate 50 is provided, and an epitaxial layer stack 52 is formed on the substrate 50 by an organometallic chemical vapor deposition method, wherein the epitaxial layer stack 52 includes at least a first conductive type semiconductor layer 520 and an active layer 522 from bottom to top. And a second conductive semiconductor layer 524, and the material of the epitaxial layer 52 is selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), nitrogen (N), phosphorus (P) or arsenic (As) Semiconductor materials, such as gallium nitride (GaN) series materials or aluminum gallium indium phosphide (AlGalnP) series materials.
  • GaN gallium nitride
  • AlGalnP aluminum gallium indium phosphide
  • the epitaxial layer stack 52 is etched by photolithography etching to define a plurality of trenches 53, thereby forming a plurality of diode cells 54 on the substrate 50, wherein the diode cells 54 comprise light emitting diodes.
  • the diode unit 54 can be grown directly on the substrate 50 in an epitaxial manner, or can be transferred by double layer transfer, after removing the original growth substrate 50, by an adhesive layer or directly pressurized/heated.
  • the diode unit 54 is bonded to another substrate to replace the original growth substrate 50, for example, a high thermal conductivity substrate or a light transmissive substrate having better thermal conductivity or transmittance than the original growth substrate 50 to improve heat dissipation of the LED array chip. Or light extraction efficiency.
  • the red photodiode unit is preferably joined to another high by an adhesive layer of a material such as a metal, an oxide, or an organic polymer in a bonding manner.
  • a material such as a metal, an oxide, or an organic polymer
  • the above-described diode unit 54 is etched again by a photolithography etching technique to expose the first conductive type semiconductor layer 520 of the diode unit 54.
  • an electrode 56 is formed on the substrate for electrically connecting with a conductive line (not shown) on the secondary carrier previously described; and a plurality of electrical connection structures 58 are formed to be electrically The dissimilar diode unit 54 and the electrode 56 are connected.
  • the electrical connection structure 58 An insulating layer 580 covering the sidewalls of the diode unit 54 and a metal layer 582 on the insulating layer 580 are included.
  • any of the LED units 540 is electrically connected to the second conductive semiconductor layer 524 of the adjacent LED unit 540 ′ through the electrical connection structure 58 . And arranged in a series of closed loops, through the above steps into the LED array chip 500.
  • the LED array chip 500 includes a substrate 50, a plurality of diode units 54 on the substrate 50, and electrodes 56a on the substrate 50. /56b, and electrical connection structure 58 connecting the different diode unit 54 and the electrodes 56a/56b in series or in parallel.
  • the multi-diode unit 54 includes a plurality of LED units 540 and a plurality of rectifying LED units 542a/542b/542c/542d, wherein the electrodes 56a are respectively electrically connected to the first conductivity type of the rectifying LED unit 542a.
  • a semiconductor layer (not shown) and a second conductive type semiconductor layer (not shown) of 542b are electrically connected; and the electrode 56b is electrically connected to the first conductive type semiconductor layer of the rectifying light emitting diode unit 542c through the electrical connection structure 58 ( The second conductive type semiconductor layer (not shown) of 542d and 542d form an electrical connection.
  • the LED units 540 are arranged to form a closed loop in series, and the rectifying LED units 542a/542b/542c/542d are respectively connected to different end points w/x/y/z in the closed loop to form a bridge. Loop.
  • FIG. 7A and FIG. 7B are circuit diagrams of the LED array chip, wherein the direction of the arrow is the current path direction when the LED array chip is in current, as shown in FIG. 7A, when the current flows from the electrode 56a into the LED array chip 500.
  • the current flows through the rectifier diode unit 542a, the light-emitting diode unit 540 (such as the path indicated by the arrow) in the closed loop, the rectifier diode unit 542c, and leaves the LED array chip 500 by the electrode 56b; As shown in FIG.
  • FIG. 8 is a schematic diagram of another circuit of an LED array chip according to an embodiment of the present invention.
  • a plurality of LED units 82 in the LED array chip 800 are arranged in a plurality of series closed loops A/B and a common loop C, wherein electrical parallel directions of adjacent closed loops are different.
  • the closed loop A is connected in series in a clockwise direction
  • the closed loop B is connected in a counterclockwise direction.
  • the adjacent closed loop A and the closed loop B have at least one common loop C.
  • the LED array chip 800 further includes a plurality of rectifier diode units 84 connected to four different end points in the closed loop A/B to form a bridge circuit to provide rectification work.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)

Description

发光元件 技术领域
本发明公开了一种发光元件， 特别是关于一种在次载体上至少包含电 子元件与至少一颗发光二极管阵列芯片并且可直接用于交流电的发光元 件。 背景技术
发光二极管 (light-emitting diode, LED)的发光原理是利用电子在 n型半 导体与 p型半导体间移动的能量差， 以光的形式将能量释放， 这样的发光 原理有别于白炽灯发热的发光原理， 因此发光二极管被称为冷光源。 此外， 发光二极管具有高耐久性、 寿命长、 轻巧、 耗电量低等优点， 因此现今的 照明市场对于发光二极管寄予厚望， 将其视为新一代的照明工具， 已逐渐 取代传统光源， 并且应用于各种领域， 如交通标志、 背光模块、 路灯照明、 医疗设备等。
图 1为已知可用于交流电源的发光二极管照明元件结构示意图。 如图 1 所示， 已知可用于交流电源的发光二极管照明元件 100 包含次载体 (submount)10、 位于次载体 10上的发光二极管阵列芯片 12, 以及与上述的 发光二极管阵列芯片 12形成电性连接的至少一焊垫 14, 其中上述的发光 二极管阵列芯片 12至少包含一基板 120以及位于基板 120上的多个发光二 极管单元 122。
若欲将上述已知可用于交流电源的发光二极管照明元件 100直接取代 一般照明装置， 此发光二极管照明元件 100必须在 100伏特至 240伏特的 高电压环境工作， 而长时间处于工作状态的发光二极管照明元件 100容易 产生温度过高的问题。在上述高温高电流 (压)的环境中， 电子元件往往容易 产生电致迁移效应（electron migration effect), 所谓 "电致迁移效应" 指的是 经由温度和电子风 ( electron wind)加乘效应所造成的金属离子的移动。 一般 而言， 温度愈高愈容易发生金属离子的电迁移现象。 在发光二极管元件中， 电子流在高的温度下会使得金属原子从电极扩散至活性区域， 诸如氧化铟 锡 (Indium Tin Oxide, ITO)和银等电极材料就容易有电致迁移。 此外焊料 (solder)或细小金属连结亦可能因为电致迁移效应产生空洞 (void)，进而导致 元件断路。
由上述描述可知， 高温高电流 (压）的工作环境大大地降低了可用于交 流电源的发光二极管照明元件的可靠度。 发明内容
本发明的主要目的在于提供一种发光元件， 其至少包含次载体 (submount), 至少一位于次载体上的电子元件， 以及至少一颗位于次载体上 的发光二极管阵列芯片， 其中上述至少一颗发光二极管阵列芯片与电子元 件形成电性连接。
本发明的又一目的是提供至少一位于次载体上的焊垫 (bond pad),与上 述的电子元件以及发光二极管阵列芯片形成电性连接， 并且通过焊垫与高 压交流电源供应器连接， 以提供交流电源至发光元件。
本发明的再一目的是提供一发光元件， 其中上述的电子元件可以是整 流单元、 电阻单元、 电容单元或电感单元等被动元件， 用以提高发光元件 的效率。
本发明公开了一种发光元件， 在此发光元件中具有至少一颗发光二极 管阵列芯片， 且上述发光二极管阵列芯片包含串联或并联连接的多发光二 极管单元。
本发明揭示一种发光元件， 在此发光元件中具有至少一颗发光二极管 阵列芯片， 且上述发光二极管阵列芯片包含多发光二极管单元， 并且排列 成一串接的封闭回路。
本发明说明一种发光元件， 在此发光元件中具有至少一颗发光二极管 阵列芯片， 且上述发光二极管阵列芯片包含多个发光二极管单元， 多个发 光二极管单元排列成多个串接封闭回路， 其中任二相邻的封闭回路具有相 异的串接方向， 且此相邻的封闭回路具有一共用部分。
本发明另一方面披露了一种发光元件， 其至少包含： 次载体； 至少一 电子元件， 位于该次载体上； 至少一颗蓝光发光二极体阵列芯片， 位于该 次载体上； 至少一颗红光二极体芯片， 位于该次载体上； 以及导电线路， 位于该次载体上， 并且分别使该电子元件、 该蓝光二极体阵列芯片、 以及 该红光二极体芯片形成电性连接。 附图说明
图 1为已知可用于交流电源的发光二极管照明元件结构示意图。 图 2A为本发明实施例的上视结构示意图。
图 2B为本发明实施例的侧视结构示意图。
图 2C为本发明另一实施例的侧视结构示意图。
图 3为本发明又一实施例的上视结构示意图。
图 4为本发明发光二极管阵列芯片的侧视结构示意图。
图 5A图至图 5D为本发明实施例中发光二极管阵列芯片的制造流程示 意图。
图 6为本发明实施例中发光二极管阵列芯片的上视结构示意图。 图 7A与 7B为本发明实施例中发光二极管阵列芯片的电路示意图。 图 8为本发明实施例中发光二极管阵列芯片的另一电路示意图。 附图标记说明
100照明元件 10次载体
12发光二极管阵列芯片 14焊垫
120基板 122发光二极管单元
200发光元件 20次载体
21反射层 22电子元件
23波长转换层 24发光二极管阵列芯片
25封装胶材 26焊垫
28导电线路 300发光元件
30次载体 31整流元件
32发光二极管阵列芯片 34电阻
36电容 38焊垫
39导电线路 400发光二极管阵列芯片
40基板 42发光二极管单元
44电极 46电性连接结构
500发光二极管阵列芯片 50基板
52外延叠层 520第一导电型半导体层
522活性层 524第二导电型半导体层 54二极管单元 540发光二极管单元
540，发光二极管单元 542整流二极管单元
56电极 58电性连接结构
580绝缘层 582金属层
542a整流二极管单元 542b整流二极管单元
542c整流二极管单元 542d整流二极管单元
56a电极 56b电极 具体实施方式
本发明揭示一种发光元件。 为了使本发明的叙述更加详尽与完备， 请 参照下列描述并配合图 2A至图 8的图示。
图 2A为本发明实施例的上视结构示意图，图 2B为本发明实施例的侧 视结构示意图， 如图 2A与图 2B 所示， 发光元件 200 至少包含次载体 (submount)20、 至少一位于次载体 20上的电子元件 22、 多颗位于次载体 20 上发光二极管阵列芯片（light-emitting array chip)24、 至少一位于次载体 20 上的焊垫 26, 以及位于次载体 20上的导电线路 (conductive trace) 28以串联 或并联的方式电性连接上述的电子元件 22、 发光二极管阵列芯片 24与焊 垫 26; 其中， 任二相邻发光二极管阵列芯片 24之间具有一间距 D, 并且 间距 D大于 ΙΟμπι; 优选为大于 ΙΟΟμπι; 而上述焊垫 26与一交流电电源供 应器 (图未示)形成电性连接， 其中此交流电电源供应器提供一般家用 100V 至 240V的高压交流电至上述发光元件 200。
上述的电子元件 22可以是至少一种单元， 其选自电阻、 电容、 电感等 被动元件 (passive element)所构成的组。
图 2C为本发明另一实施例结构示意图， 如图 2C所示， 本发明的发光 元件 200亦包含位于次载体 20上的反射层 21 , 用以反射发光二极管阵列 芯片 24所发出的光线，而次载体 20上更具有碗杯状凹陷结构 29以容纳上 述的电子元件 22或发光二极管阵列芯片 24; 此外， 上述的发光元件 200 还包含位于发光二极管阵列芯片 24上的波长转换层 23以及位于次载体 20 上且至少覆盖上述发光二极管阵列芯片 24的封装胶材 25。
图 3为本发明另一实施例的上视结构示意图， 如图 3所述， 发光元件
300至少包含次载体 30、 位于次载体 30上的整流元件 31、 多颗位于次载 体 30上的发光二极管阵列芯片 32、 至少一位于次载体 30上与发光二极管 阵列芯片 32串联的电阻 34、 至少一位于次载体 30上与发光二极管阵列芯 片 32与电阻 34串联的电容 36、 至少一位于次载体 30上的焊垫 38, 以及 位于次载体 30上的导电线路 39用以使上述的整流元件 31、 发光二极管阵 列芯片 32、 电容 34、 电阻 36与焊垫 38形成电性连接； 其中， 整流元件 31包含至少一具有低导通电压及高逆向偏压的二极管单元排列而成的桥式 整流回路， 通过此整流元件 31 将交流电源供应器所提供的正弦波交流电 (AC)转换为脉冲式直流电 (pulsed DC)后供发光元件 300利用； 其中， 具有 低导通电压高逆向偏压的二极管单元可以是基纳二极管 (Zener Diode)或萧 特基二极管 (Schottky Diode)； 其材料选自包含 III- V族化合物或 IV族元素， 例如氮化镓 (GaN)系列材料、 磷化铝镓铟 (AlGalnP)系列材料、 或硅。 其中， 任二相邻发光二极管阵列芯片 32之间具有大于 ΙΟμπι的间距， 优选为大于 ΙΟΟμπι的间距； 此外， 上述焊垫 38与一交流电电源供应器 (图未示)形成电 性连接， 其中上述的交流电电源供应器（图未示)提供为一般家用 100V至 240 V的高压交流电的电源至上述发光元件 300。
图 4为上述实施例中发光二极管阵列芯片的侧视结构示意图， 如图 4 所示， 发光二极管阵列芯片 400包含基板 40、 位于基板 40上的多个发光 二极管单元 (light-emitting diode unit) 42、位于基板 40上的至少两个电极 44, 以及以同向串联或并联方式使多个发光二极管单元 42与电极 44形成电性 连接的电性连接结构 46; 其中， 上述连接结构 46可以是金属线 (wire)或金 属层，而上述的电极 44用以与本发明发光元件次载体上的导电线路形成电 性连接 (图未示)； 不仅如此，此发光二极管阵列芯片 400可通过控制发光二 极管单元 42的数量与连接方式使发光二极管阵列芯片 400本身具有特定工 作电压。 通过上述发光二极管阵列芯片可弹性设计电压的特性， 再配合多 颗发光二极管阵列芯片 400 串联的设计， 使本发明发光元件可符合一般家 用 100V至 240V的电压条件。
参考图 2至图 4, 以应用于一般照明系统的 110伏特的交流电力系统 的应用为例， 前述的多颗发光二极管阵列芯片为一 2x2排列的矩阵 (如图 3 所示）， 其中至少一颗发光二极管阵列芯片 32包含氮化铟镓 (InGaN)的发光 层以发出峰波长 (peak wavelength)范围介于 440~480纳米的蓝光 (定义为蓝 光二极管阵列芯片）； 以及至少一颗发光二极管阵列芯片 32 包含碑化铝镓 米的红光 (定义为红光二极管阵列芯片）。在蓝光二极管阵列芯片上涂布可吸 收发出的蓝光波长并转换为峰波长范围介于 570~595纳米的黄光的波长转 换层（定义为黄光荧光粉 ), 例如为商用的 YAG或 TAG荧光粉 (如第 2C图 所示）， 以混合发出白光。 为达到不同色温 (color temperature)的要求， 可调 整所述的蓝光及 /或红光二极管阵列芯片的颗数、所述的蓝光及 /或红光二极 管阵列芯片的芯片面积、 或所述的蓝光及 /或红光二极管阵列芯片的二极管 单元数量， 或覆盖以可转换发出其他颜色的荧光粉， 例如绿光荧光粉， 以 达到调整色温的要求。 各实施例详列如下表所示， 并举下表的第 2实施例 详述如后： 实施例 交流电力系 蓝光二极管阵 蓝光二极管单 红光二极管阵 红光二极管单 编号 统 列芯片颗数 元数量 列芯片数量 元数量 1 AC 110V 2 12 2 6 2 AC 110V 3 8 1 12 3 AC 220V 2 24 2 12 4 AC 220V 3 16 1 24 上表的第 2实施例为依本发明的发出暖白光 (warm white)的发光元件， 其中， 所有蓝光二极管阵列芯片的发光功率与所有红光二极管阵列芯片的 发光功率比约为 3: 1。 所述的发光元件包含蓝光及红光二极管阵列芯片的 颗数例如各为 3颗及 1颗。 蓝光二极管阵列芯片中串联的发光二极管单元 (定义为蓝光二极管单元)数量为 8个单元，红光二极管阵列芯片中串联的发 光二极管单元 (定义为红光二极管单元)数量为 12个单元。 因此， 发光元件 的所有蓝光二极管单元与所有红光二极管单元的比例为 24: 12 或 2: 1。 并且， 各蓝光及红光二极管单元的顺向偏压值分别约为 3伏特及 2伏特。 因此，所述的各蓝光及红光二极管阵列芯片系为一 24伏特的高压直流阵列 芯片， 且其所串联而形成的一整体 2x2矩阵系为一 96伏特的负载。 在驱动 时， 上述的发光元件发出的蓝光及红光功率比约为 3: 1。 将此矩阵串联至 一预定电阻及前述的具有桥式整流回路的整流元件， 可形成一用于 110V 交流电力系统的发光元件。 在本发明的实施例中， 所有蓝光二极管阵列芯 片与所有红光二极管阵列芯片的发光功率的比值约介于 2至 4, 优选为介 为 2.6~3.4； 或者所述的发光元件的所有蓝光与红光二极管单元的数量比值 约介于 4/3与 8/3之间， 以控制色温范围介于 2000~5000K形成偏暖色系白 光； 优选为色温范围介于 2000 3500Κ的暖白光。 在本发明的另一实施例， 所述的红光二极管阵列芯片亦可被多个串联的非阵列式红光二极管芯片所 取代， 所述的多个非阵列式红光二极管芯片串联的芯片数量相同于被取代 的红光二极管阵列芯片所具有的红光二极管单元的数量； 其中， 各所述的 非阵列式红光二极管芯片仅具有一所述的红光二极管单元， 其顺向偏压值 约为 2伏特。
图 5Α至图 5D为另一发光二极管阵列芯片的制造流程示意图。 如图
5Α所示， 提供基板 50, 并且以有机金属化学气相沉积法在基板 50上形成 外延叠层 52, 其中上述的外延叠层 52 由下而上至少包含第一导电型半导 体层 520、 活性层 522, 以及第二导电型半导体层 524, 并且此外延叠层 52 的材料选自包含铝 (Al)、 镓 (Ga)、 铟 (In)、 氮 (N)、 磷 (P)或砷 (As)的半导体物 质， 例如氮化镓 (GaN)系列材料或磷化铝镓铟 (AlGalnP)系列材料。
随后， 如图 5B所示， 利用光刻蚀刻技术蚀刻上述的外延叠层 52, 以 定义出多沟槽 53 , 由此在基板 50上形成多个二极管单元 54, 其中上述二 极管单元 54包含发光二极管单元 540/540，与整流二极管单元 542。 此外， 二极管单元 54除了可以外延成长方式直接成长于基板 50, 也可以二次基 板转移 (double substrate transfer)的方式， 在移除原成长基板 50之后， 通过 一粘着层或直接加压 /加热的方式将二极管单元 54接合至另一基板， 以取 代原成长基板 50, 例如为热传导系数或透光度较原成长基板 50为佳的高 导热基板或透光基板， 以提高发光二极管阵列芯片的散热或光取出效率。 以上述的红光二极管阵列芯片或非阵列式红光二极管芯片为例， 其中的红 光二极管单元优选为以接合方式通过金属、 氧化物、 或有机高分子等材料 的粘着层接合至另一高导热基板或透光基板上。
接着如图 5C所示，再次利用光刻蚀刻技术蚀刻上述的二极管单元 54, 使二极管单元 54棵露部分的第一导电型半导体层 520。
最后， 如图 5D所示， 在基板上形成电极 56, 用以与先前所述的次载 体上的导电线路 (图未示)形成电性连接； 并且形成多个电性连接结构 58以 电性连接相异二极管单元 54与电极 56。 在本实施例中， 电性连接结构 58 包含覆盖二极管单元 54的侧壁的绝缘层 580以及位于绝缘层 580上的金属 层 582。
此外， 在上述发光二极管单元 540中， 任一发光二极管单元 540以第 一导电型半导体层 520通过电性连接结构 58与相邻发光二极管单元 540' 的第二导电型半导体层 524形成电性连接，并且排列成一串接的封闭回路， 通过上述的步骤成发光二极管阵列芯片 500。
图 6为图 5D中发光二极管阵列芯片 500的上视结构示意图， 如图 6 所示， 发光二极管阵列芯片 500包含基板 50、 位于基板 50上的多个二极 管单元 54、 位于基板 50上的电极 56a/56b, 以及以串联或并联方式使连接 相异二极管单元 54与电极 56a/56b的电性连接结构 58。
上述的多二极管单元 54 , 包含多个发光二极管单元 540以及多个整流 发光二极管单元 542a/542b/542c/542d, 其中电极 56a通过电性连接结构 58 分别与整流发光二极管单元 542a的第一导电型半导体层 (图未示)以及 542b 的第二导电型半导体层 (图未示)形成电性连接；而电极 56b通过电性连接结 构 58分别与整流发光二极管单元 542c的第一导电型半导体层 (图未示)以及 542d 的第二导电型半导体层 (图未示)形成电性连接。 此外， 发光二极管单 元 540排列形成串接的封闭回路，整流发光二极管单元 542a/542b/542c/542d 则分别连接于上述封闭回路中相异的端点 w/x/y/z, 以形成一桥式回路。
图 7A与图 7B为上述发光二极管阵列芯片的电路示意图，其中箭号方 向为发光二极管阵列芯片电流通入时的电流路径方向， 如图 7A所示， 当 电流由电极 56a流入发光二极管阵列芯片 500时， 电流会流经整流二极管 单元 542a、封闭回路中部分的发光二极管单元 540(如箭号所示的路径）、整 流二极管单元 542c, 并且由电极 56b离开发光二极管阵列芯片 500; 相对 于此， 如图 7B所示， 当电流由 56b流入发光二极管阵列芯片 500时， 电流 会流经整流二极管 542d、封闭回路中部分的发光二极管单元 540(如箭号所 示的路径)、 经整流二极管 542b, 并且由电极 56a离开发光二极管阵列芯片 500。
图 8为本发明实施例中发光二极管阵列芯片另一电路示意图。 如图 8 所示，发光二极管阵列芯片 800中多个发光二极管单元 82排列成多串接封 闭回路 A/B及一共用回路 C, 其中相邻封闭回路的电性串接方向相异。 在 本实施例中， 封闭回路 A以顺时针方向串接， 封闭回路 B以逆时针方向串 接， 且上述相邻的封闭回路 A与封闭回路 B之间至少具有一共用回路 C。 不仅如此， 发光二极管阵列芯片 800还包含多个整流二极管单元 84, 分别 与封闭回路 A/B中相异的四个端点相连接形成一桥式回路， 以提供整流功
•6匕
匕。 领域的技术人员能够了解本发明的内容并据以实施， 当不能以之限定本发 明的专利范围， 即大凡依本发明所揭示的精神所作的等同变化或修饰， 仍 应涵盖在本发明的专利范围内。

Claims

权利要求
1. 一种可用于高压交流电的发光元件， 至少包含：
次载体 (submount)；
至少一电子元件， 位于该次载体上；
至少一颗蓝光发光二极管阵列芯片， 位于该次载体上， 其中， 该蓝光 二极管阵列芯片包含第一基板及共同形成于该第一基板上的多个蓝光二极 管单元；
至少一颗红光二极管芯片， 位于该次载体上， 其中， 该红光二极管芯 片包含第二基板及共同形成于该第二基板上的至少一个红光二极管单元； 以及
导电线路， 位于该次载体上， 并且分别使该电子元件、 该蓝光二极管 阵列芯片、 以及该红光二极管芯片形成电性连接。
2. 如权利要求 1所述的发光元件， 其中该电子元件为整流元件、 电阻 元件、 电容元件或电感元件。
3. 如权利要求 2所述的发光元件，其中该整流元件由至少一具有低顺 向电压与高逆向偏压的单元所组成。
4. 如权利要求 3所述的发光元件，其中该具有低顺向电压与高逆向偏 压的单元可以系整流二极管或萧基特二极管。
5. 如权利要求 1所述的发光元件，该多个蓝光二极管单元形成同向串 联及 /或并联连接。
6. 如权利要求 1所述的发光元件，其中该多个蓝光二极管单元排列成 至少一串接的封闭回路。
7. 如权利要求 6所述的发光元件，该蓝光二极管阵列芯片还包含多个 整流二极管单元以与该封闭回路形成桥式回路。
8. 如权利要求 7所述的发光元件，该蓝光二极管阵列芯片还包含至少 一电极， 其中该电极分别与该二极管单元以及该导电线路形成电性连接。
9. 如权利要求 1所述的发光元件，其中该多个发光二极管单元串接排 列成多个封闭回路， 其中任选二相邻的封闭回路具有相异的串接方向， 且 该相邻的封闭回路具有一共用部分。
10. 如权利要求 9所述的发光元件， 该蓝光二极管阵列芯片还包含多 个整流二极管单元以与该封闭回路形成桥式回路。
11. 如权利要求 10所述的发光元件， 该蓝光二极管阵列芯片还包含至 少一电极，其中该电极分别与该二极管单元以及该导电线路形成电性连接。
12. 如权利要求 1所述的发光元件， 包含多个颗蓝光二极管阵列芯片 串联或并联形成一特定的电位降， 使所述的发光元件符合一般家用 100V 至 240V的电压条件。
13. 如权利要求 1所述的发光元件， 其中该次载体具有至少一碗杯状 凹陷结构， 用以容纳该电子元件与该多颗发光二极管阵列芯片。
14. 如权利要求 1所述的发光元件，还包含位于该次载体上的反射层。
15. 如权利要求 1所述的发光元件， 还包含位于该多颗发光二极管阵 列芯片上的波长转换层。
16. 如权利要求 1所述的发光元件， 还包含一封装胶材， 位于该次载 体上， 并且至少覆盖该多颗发光二极管阵列芯片。
17. 如权利要求 15所述的发光元件，其中所述的波长转换层包含黄色 荧光粉或绿色荧光粉。
18. 如权利要求 1所述的发光元件， 其中该至少一颗红光二极管芯片 包括至少一非阵列式红光二极管芯片， 该非阵列式红光二极管芯片仅具有 一红光二极管单元。
19. 如权利要求 1所述的发光元件， 其中该至少一颗红光发光二极管 芯片包括至少一红光二极管阵列芯片并具有共同形成于该第二基板上的多 个红光二极管单元。
20. 如权利要求 19所述的发光元件，其中所有该蓝光及红光二极管阵 列芯片所各具有的发光二极管单元数量比值约介于 4/3与 8/3之间。
21. 如权利要求 1所述的发光元件， 其中所有蓝光二极管阵列芯片与 红光二极管芯片的发光功率比值约介于 2~4。
22. 如权利要求 21所述的发光元件，其中所有蓝光二极管阵列芯片与 红光二极管芯片的发光功率比值约介于 2.6~3.4。
23. 如权利要求 15所述的发光元件， 发出色温范围介于 2000~3500K 的暖白光。
24. 如权利要求 1所述的发光元件，其中该红光二极管单元通过金属、 氧化物、 或有机高分子材料接合至该第二基板上。
PCT/CN2009/074422 2009-02-09 2009-10-13 发光元件 WO2010088823A1 (zh)

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CN102257619B (zh) 2015-05-13

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