TWI495084B - 發光元件 - Google Patents

發光元件 Download PDF

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TWI495084B
TWI495084B TW098123043A TW98123043A TWI495084B TW I495084 B TWI495084 B TW I495084B TW 098123043 A TW098123043 A TW 098123043A TW 98123043 A TW98123043 A TW 98123043A TW I495084 B TWI495084 B TW I495084B
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light
substrate
emitting
electrical connection
layer
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TW201103121A (en
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Chia Liang Hsu
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Epistar Corp
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Priority to US12/831,647 priority patent/US20110006312A1/en
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Priority to US14/265,102 priority patent/US8987017B2/en
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    • H—ELECTRICITY
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    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
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Description

發光元件
一種發光元件，特別是一種關於發光元件之基板具有一第一主要表面與一第二主要表面，且第一主要表面上有複數個發光疊層，而第二主要表面上具有至少一電子元件，其中複數個發光疊層與整流元件形成電性連接。
發光二極體(light-emitting diode,LED)的發光原理是利用電子在n型半導體與p型半導體間移動的能量差，以光的形式將能量釋放，這樣的發光原理係有別於白熾燈發熱的發光原理，因此發光二極體被稱為冷光源。此外，發光二極體具有高耐久性、壽命長、輕巧、耗電量低等優點，因此現今的照明市場對於發光二極體寄予厚望，將其視為新一代的照明工具，已逐漸取代傳統光源，並且應用於各種領域，如交通號誌、背光模組、路燈照明、醫療設備等。
第1圖為習知用於交流電之發光元件結構示意圖，如第1圖所示，發光元件100至少包含一基板10、複數個發光二極體單元12位於基板10上串聯成電路A和電路B後反向並聯，以及二電極14/16位於基板10上，與複數個發光二極體單元12形成電性連接。當交流電電流由電極14流入發光元件100時，電流流經電路A，且使電路A上的發光二極體單元12發出光線；相對地，當交流電電流由電極16流入發光元件100時，電流流經電路B，並且使電路B上的發光二極體單元12發出光線。
此外，上述之光電元件100更可以進一步地與其他元件組合連接以形成一光電裝置(photoelectric apparatus)。第2圖為習知之光電裝置結構示意圖，如第2圖所示，一光電裝置200包含一具有至少一電路202之次載體(sub-mount)20；至少一焊料(solder)22位於上述次載體20上，藉由此焊料22將上述光電元件100黏結固定於次載體20上並使光電元件100之基板10與次載體20上之電路202形成電連接；以及，一電連接結構24，以電性連接光電元件100之電極16與次載體20上之電路202；其中，上述之次載體20包含導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate)，以方便發光裝置200之電路規劃並提高其散熱效果。
雖然，上述之發光元件100設計可直接應用於交流電源上，然而同一時間內卻僅部份的發光二極體單元12能發出光線，往往造成發光元件上發光區域之浪費。
本發明之主要目的係提供一種發光元件，包含：一基板，具有一第一主要表面與一第二主要表面；複數個發光疊層，彼此間隔地分佈於此基板之第一主要表面，其中上述發光疊層之間係以一第一電連接結構形成電連接；以及至少一電子元件，位於基板之第二主要表面，並藉由一第二電性連接結構自基板之第一主要表面至延伸基板之第二主要表面以電性連接發光疊層及電子元件。
本發明之另一目的在於提供一種發光元件，包含：一基板，具有一第一主要表面與一第二主要表面；複數個發光疊層，位於此基板之第一主要表面；以及至少一橋式整流元件以及至少一被動元件，位於此基板之第二主要表面，其中上述之發光疊層與上述之橋式整流元件間形成電性連接。
本發明之再一目的在於提供一發光元件，至少具有一基板，其中複數個發光疊層與至少一電子元件分別位於上述基板之上下表面，且第一主要表面之複數個發光疊層與第二主要表面之電子元件係藉由基板上之金屬柱(plug)或金屬導線相連接。
本發明之又一目的在於提供一發光元件，至少具有一基板，其中複數個發光疊層與至少一電子元件分別位於上述基板之上下表面，更包含一導熱層(heat dissipation layer)位於上述基板之下表面，藉此提高發光元件之散熱效率並且增加發光元件之可靠度。
本發明之又一目的在於提供發光元件係將整流元件、電阻、電感、電容等電子元件、或導熱層等非以發光為主要目的之元件設置於基板之第二主要表面，並且發光疊層設置於基板之第一主要表面，藉此可將發光元件中發光疊層所在的整個表面做為出光面，以減少發光面積之浪費。
以下配合圖式說明本發明之實施例。
第3A圖為本發明一實施例之側視結構示意圖，而第3B圖為本發明實施例之電路結構示意圖；如第3A圖與第3B圖所示，發光元件300包含：一基板30，具有一第一主要表面302與一第二主要表面304；複數個發光疊層32，彼此間隔地分佈於此基板30之第一主要表面302，其中上述發光疊層32之間係以複數第一電連接結構320形成電連接；以及至少一整流元件34，位於此基板30之第二主要表面304，其中上述之整流元件34包含複數半導體疊層340，此半導體疊層340藉由一第二電連接結構342形成電性連接並排列成橋式迴路，此外，上述之發光疊層32與上述之整流元件34間藉由一第電性連接結構36形成電性連接。
此外，上述之發光元件300更包含至少一位於第二主要表面304之接觸墊(bump pad)38，分別與上述之整流元件34以及交流電源提供器(圖未示)形成電連接，當交流電經由接觸墊38流入發光元件300時，會經由位於第二主要表面304上之複數半導體疊層340排列成橋式迴路之整流元件34將交流電轉換為直流電，再經過第三電連接結構36，將電流傳送至發光疊層32中。其中第三電連接結構36包含金屬柱填充於穿透基板30之穿孔或導線自基板30之第一主要表面302延伸至第二主要表面304。
於上述之發光元件300中，基板30之材質包含藍寶石(sapphire)、氮化鋁(AlN)、玻璃(glass)或鑽石(diamond)等絕緣材料；基板30亦可以是一單層結構，實質上以一單一材質組成。於本實施例中基板30係藍寶石材質之單層基板；發光疊層32至少包含一位於基板30上之第一導電型半導體層322、一位於第一導電型半導體層322上之發光層324以及一位於發光層324上之第二導電型半導體層326，其中發光疊層32之材質則可以選自包含鋁(Al)、鎵(Ga)、銦(In)、氮(N)、磷(P)或砷(As)之半導體物質，例如氮化鎵(GaN)系列材料或磷化鋁鎵銦(AlGaInP)系列材料；於本實施例中，發光疊層32係以有機金屬化學氣相沉積技術所形成的，每一個發光疊層32係以微影蝕刻技術形成具有部分裸露之第一導電型半導體層322，而上述之第一電連接結構320係分別與發光疊層32之第一導電型半導體層322以及相鄰發光疊層32之第二導電型半導體層326形成串聯連接。
再者，上述組成整流元件34之半導體疊層340包含由有機金屬化學氣相沉積(MOCVD)技術與微影蝕刻技術所形成複數個發光二極體(Light emitting diode)、基納二極體(Zener Diode)、或蕭特基二極體(Schottky Diode)之結構，其材質係選自包含III-V族化合物或IV族元素，例如氮化鎵(GaN)系列材料、磷化鋁鎵銦(AlGaInP)系列材料、或矽。
第一電連接結構320可以如第4A圖所示包含一填充於相鄰之發光疊層32之間之絕緣層3202，以防止相鄰之發光疊層32之間發生短路之情形，以及一金屬層3204位於上述之絕緣層3202上並且與相鄰之發光疊層32形成電性連接；此外，第一電連接結構320亦可如第4B圖所示係一金屬線，金屬線之兩端分別與相鄰之發光疊層32形成電性接觸。而第二電連接結構342可以如第5A圖所示包含一填充於相鄰之半導體疊層340之間之絕緣層3422，以防止相連之半導體疊層340之間形成短路，以及一金屬層3424位於上述之絕緣層3422上，並且與相鄰之半導體疊層340形成電性連接，此外，第二電連接結構342亦可如第5B圖所示係一金屬線，金屬線之兩端分別與相鄰之半導體疊層340形成電性接觸。
第6圖為本發明另一實施例結構示意圖，前述之發光元件300之發光疊層32與半導體疊層340除了可以以上述有機金屬化學氣相沉積技術與微影蝕刻技術分別形成於基板30的第一主要表面302與第二主要表面304之外，亦可如第6圖所示，提供一黏結層44分別於發光疊層32、半導體疊層340以及基板30之間，分別將發光疊層32與半導體疊層340固定於基板30之第一主要表面302與第二主要表面304上，藉由上述黏結層44固定發光疊層32與半導體疊層340之技術，提高產品之良率並且降低生產成本；其中，黏著層44之材質包含金屬材質或有機黏著材質。
第7圖為本發明另一實施例結構示意圖，如第6圖所示，發光元件300更可以包含位於基板30第二主要表面304之被動元件40與整流元件34電性連接，例如被動元件40包含一電阻、一電感、或一電容串聯至整流元件34、或一電容與整流元件34並聯以提供發光元件300電性上的保護或調整發光元件300之電性特性，被動元件40例如是薄膜電阻、薄膜電容或薄膜電感使易於與發光元件300整合成單一晶粒(single chip)；上述之薄膜電阻之材質包含氮化鉭(TaN)、矽鉻合金(SiCr)或鎳鉻合金(NiCr)等材料。
第8圖為本發明另一實施例結構示意圖，如第8圖所示，發光元件300更包含一波長轉換結構42位於發光疊層32上，用以吸收並轉換發光疊層32所發出之光線；其中波長轉換結構42之材質至少包含一種或一種以上之螢光物質或磷光物質，且此波長轉換結構42可為一層狀結構均勻塗佈於發光疊層32之上或為一內含波長轉換材質之膠體將發光疊層32封於其內，藉以產生不同光學性質之產品。
第9圖為本發明又一實施例之結構示意圖，如第8圖所示，發光元件300更包含一導熱層46，其中導熱層46可以與基板30之第二主要表面304接觸或與被動元件34接觸，用以將發光元件300中各部件所產生之熱能導出。此外，上述導熱層46之材質可以選自具有高熱傳導係數(thermal conductivity)之材料，其熱傳導係數大於基板30之熱傳導係數或大於50W/mK，導熱層46之材質包含銅、銀、金、鎳、鑽石、類鑽石結構(DLC)、氮化鋁(AlN)、石墨、奈米碳管(CNT)或其組合；導熱層46之厚度例如大於3μm，其面積例如佔基板30面積不小於50%。
再者，上述第3A圖至第9圖所述之發光元件300可以應用在一發光裝置上，此發光裝置更可進一步地應用於照明設備、液晶顯示器背光模組或車用照明等，而且發光元件300可以適用於100V、110V、220V、240V、12V、24V或48V等供應電源。
綜上所述，本發明揭示之發光元件300係將整流元件34、接觸墊38、電容、電阻、電感等被動元件40以及導熱層46等非以發光為主要目的之元件設置於基板30之第二主要表面304，並且發光疊層32設置於基板30之第一主要表面302，藉此可將發光元件300中發光疊層32所在的整個表面做為出光面，以減少發光面積之浪費。
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使具備此項技藝一般知識之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。
100．．．發光元件
10．．．基板
12．．．發光二極體單元
14．．．電極
16．．．電極
200．．．光電裝置
202．．．電路
20．．．次載體
22．．．焊料
24．．．電性連接結構
300．．．發光元件
30．．．基板
302．．．第一主要表面
304．．．第二主要表面
32．．．發光疊層
320．．．第一電性連接結構
34．．．整流元件
340．．．半導體疊層
342．．．第二電性連接結構
36．．．第三電性連接結構
38．．．接觸墊
40．．．被動元件
322．．．第一導電型半導體層
324．．．發光層
326．．．第二導電型半導體層
3202．．．絕緣層
3204．．．金屬層
3422．．．絕緣層
3424．．．金屬層
44．．．波長轉換層
46．．．導熱層
第1圖為習知之發光元件結構示意圖。
第2圖為習知之光電裝置結構示意圖。
第3A圖為本發明實施例之側視結構示意圖。
第3B圖為本發明電路結構示意圖。
第4A至4B圖為本發明實施例中第一電性連接結構之結構示意圖。
第5A至5B圖為本發明實施例中第二電性連接結構之結構示意圖。
第6圖為本發明實施例之上視結構示意圖與下視結構示意圖。
第7圖為本發明實施例中第四電性連接結構之結構示意圖。
第8圖為本發明另一實施例之結構示意圖。
第9圖為本發明又一實施例之結構示意圖。
300．．．發光元件
30．．．基板
302．．．第一主要表面
304．．．第二主要表面
32．．．發光疊層
320．．．第一電性連接結構
34．．．整流元件
340．．．半導體疊層
342．．．第二電性連接結構
36．．．第三電性連接結構
38．．．接觸墊
40．．．被動元件

Claims (10)

  1. 一種發光元件，包含：一基板，具有一第一主要表面與一第二主要表面；複數個發光疊層，以有機化學氣相沉積技術形成於該基板之第一主要表面，其中該發光疊層之間係以一第一電性連接結構形成電性連接；至少一非以發光為主要目的的電子元件，位於該基板之第二主要表面；一第二電性連接結構延伸自該基板之第一主要表面至該基板之第二主要表面以電性連接該發光疊層及該電子元件；以及一接觸墊，用以使該些發光疊層、該電子元件及外部電源進行電性連接，位於該基板之第二主要表面。
  2. 如申請專利範圍第1項所述之發光元件，其中該電子元件包含電阻、電容或電感。
  3. 如申請專利範圍第1項所述之發光元件，其中該電子元件包含橋式整流元件。
  4. 如申請專利範圍第3項所述之發光元件，其中該橋式整流元件包含複數半導體疊層。
  5. 如申請專利範圍第1項所述之發光元件，該第一電性連接結構包含金屬導線。
  6. 如申請專利範圍第1項所述之發光元件，其中該第二電性連接結構包含穿透該基板之金屬柱。
  7. 如申請專利範圍第1項所述之發光元件，更包含一結構均勻之波長轉換結構配置於該發光疊層上。
  8. 如申請專利範圍第1項所述之發光元件，更包含一導熱層位於該基板之第二主要表面，其中該導熱層具有一熱傳導係數大於50W/mK。
  9. 如申請專利範圍第8項所述之發光元件，其中該導熱層之面積佔基板面積不小於50%。
  10. 如申請專利範圍第1項所述之發光元件，更包含一黏結層位於該電子元件與該基板之間。
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