JP2007070730A - 金属デュプレックス及び方法 - Google Patents
金属デュプレックス及び方法 Download PDFInfo
- Publication number
- JP2007070730A JP2007070730A JP2006241198A JP2006241198A JP2007070730A JP 2007070730 A JP2007070730 A JP 2007070730A JP 2006241198 A JP2006241198 A JP 2006241198A JP 2006241198 A JP2006241198 A JP 2006241198A JP 2007070730 A JP2007070730 A JP 2007070730A
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- Prior art keywords
- nickel
- gold
- layer
- phosphorous
- phosphorus
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
- C25D5/505—After-treatment of electroplated surfaces by heat-treatment of electroplated tin coatings, e.g. by melting
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/623—Porosity of the layers
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- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
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Abstract
【解決手段】方法及び物品が開示される。方法は、基体上にニッケルデュプレックス層を堆積させ、基体の腐食を抑制し、且つはんだ付け性を改善するためにことを対象とする。該基体は金または金合金仕上げを有する。
【選択図】なし
Description
3つの銅−スズ合金リードフレームを、100g/LのRONACLEAN(商標)CP−100(これは、米国ペンシルベニア終フィラデルフィア、Rohm and Haas Companyから入手可能なシリケート含有洗浄組成物である)を含有する洗浄液中、65℃で30秒間、超音波洗浄した。
2つの真鍮リードフレームを60℃で30秒間、RONACLEAN(商標)CP−100洗浄液中で超音波洗浄した。リードフレームを次いで100ml/Lの工業銘柄の硫酸の溶液中に、室温で10秒間浸漬した。各リードフレームを次いで、以下の表3の処方を有するニッケル浴により2ミクロンのニッケル層で電気メッキした。
3つの真鍮リードフレームを、100g/LのRONACLEAN(商標)CP−100を用い、65℃で30秒間、超音波洗浄した。洗浄後、各コネクターを次いで100ml/Lの工業銘柄の硫酸の溶液中に、室温で10秒間浸漬した。各リードフレームを次いで、前記の表1のニッケル電解液を用いて2ミクロンのニッケル層で電気メッキした。ニッケル堆積は、ハルセル中、pH4、50℃の温度で行われた。電流密度は10ASDであり、80秒間にわたって行われた。
金−コバルト層をニッケルもしくはニッケルリン層上にメッキするために水性金コバルト合金電気メッキ浴を使用する以外は、実施例2を繰り返す。金−コバルト合金浴は、4g/Lのシアン化金カリウム、1g/Lの硫酸コバルト(0.25g/Lのコバルトイオン)及び150g/Lのメチレンホスホン酸を含む。水性金−コバルト浴のpHは4である。浴のpHを水酸化カリウムを用いて維持する。浴を40℃に維持し、且つ電流密度は1ASDである。電気メッキは、0.2〜0.5ミクロンの金−コバルト層が各リードフレームのニッケルリン層上に形成されるまで行われる。
水性金−コバルト合金電気メッキ浴が4g/Lのシアン化金カリウム、1g/Lのメチレンホスホン酸コバルトの四カリウム塩、124g/Lのクエン酸三カリウム、29g/Lのクエン酸及び45g/Lのリン酸一カリウムを含む以外は、実施例4を繰り返す。浴のpHを5に維持し、且つ浴温は35℃に維持する。電流密度は1ASDであり、メッキを行い、各リードフレーム上に0.2〜0.5ミクロンの金−コバルト層を形成する。
Claims (8)
- 基体上にニッケル層を堆積させること、該ニッケル層上にニッケルリン層を堆積させること、及び該ニッケルリン上に金もしくは金合金層を堆積させることを含み、該ニッケルリン層が0.1重量%〜10重量%のリンを含む、方法。
- ニッケルリン層が、1重量%〜9重量%のリンを含む、請求項1記載の方法。
- 基体上に1ミクロン〜10ミクロンのニッケル層を堆積させること、該ニッケル層上に0.1ミクロン〜5ミクロンのニッケルリン層を堆積させること、及び該ニッケルリン層上に金もしくは金合金層を堆積させることを含み、該ニッケルリン層が1重量%〜10重量%のリンを含む、方法。
- 金または金合金層を熱老化させる工程をさらに含む、請求項3記載の方法。
- 基体上のニッケル層及び該ニッケル層上のニッケルリン層と、該ニッケルリン層上の金もしくは金合金とを含み、該ニッケルリン層が0.1重量%〜10重量%のリンを含む、物品。
- ニッケルリン層が、1重量%〜9重量%のリンを含む、請求項5記載の物品。
- ニッケル層が、1ミクロン〜10ミクロンの厚さであり、及びニッケルリン層が0.1ミクロン〜5ミクロンの厚さである、請求項5記載の物品。
- 物品が、プリント配線板、リードフレーム、コネクター、ウェハバンプまたは受動素子である、請求項5記載の物品。
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US71457505P | 2005-09-07 | 2005-09-07 |
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JP2006241198A Pending JP2007070730A (ja) | 2005-09-07 | 2006-09-06 | 金属デュプレックス及び方法 |
JP2006241209A Expired - Fee Related JP5026031B2 (ja) | 2005-09-07 | 2006-09-06 | スズ層を有する金属デュプレックスの製造方法 |
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US (2) | US20070052105A1 (ja) |
EP (2) | EP1762641A3 (ja) |
JP (2) | JP2007070730A (ja) |
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US20070052105A1 (en) * | 2005-09-07 | 2007-03-08 | Rohm And Haas Electronic Materials Llc | Metal duplex method |
JP2009521798A (ja) * | 2005-12-24 | 2009-06-04 | ヒュン キュ チョイ, | 半導体パッケージ、その製造方法及びイメージセンサー用の半導体パッケージモジュール |
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DE102006032074B3 (de) * | 2006-07-11 | 2007-12-27 | Infineon Technologies Ag | Bauelement und zugehöriger Anschlussdraht |
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JP6046406B2 (ja) * | 2011-07-26 | 2016-12-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 高温耐性銀コート基体 |
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Also Published As
Publication number | Publication date |
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US20070052105A1 (en) | 2007-03-08 |
CN1936094B (zh) | 2011-06-22 |
SG131043A1 (en) | 2007-04-26 |
HK1101603A1 (en) | 2007-10-18 |
EP1762640A3 (en) | 2008-05-21 |
TWI371797B (en) | 2012-09-01 |
KR20070028265A (ko) | 2007-03-12 |
SG131046A1 (en) | 2007-04-26 |
EP1762641A2 (en) | 2007-03-14 |
TW200717658A (en) | 2007-05-01 |
EP1762640A2 (en) | 2007-03-14 |
CN1936095A (zh) | 2007-03-28 |
TW200714732A (en) | 2007-04-16 |
CN1936094A (zh) | 2007-03-28 |
JP2007070731A (ja) | 2007-03-22 |
US20070054138A1 (en) | 2007-03-08 |
TWI326717B (en) | 2010-07-01 |
JP5026031B2 (ja) | 2012-09-12 |
US7615255B2 (en) | 2009-11-10 |
KR20070028266A (ko) | 2007-03-12 |
EP1762641A3 (en) | 2008-05-07 |
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