US20070052105A1 - Metal duplex method - Google Patents

Metal duplex method Download PDF

Info

Publication number
US20070052105A1
US20070052105A1 US11/510,883 US51088306A US2007052105A1 US 20070052105 A1 US20070052105 A1 US 20070052105A1 US 51088306 A US51088306 A US 51088306A US 2007052105 A1 US2007052105 A1 US 2007052105A1
Authority
US
United States
Prior art keywords
nickel
gold
layer
phosphorous
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/510,883
Other languages
English (en)
Inventor
Danny Lau
Raymund Kwok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Priority to US11/510,883 priority Critical patent/US20070052105A1/en
Assigned to ROHM AND HAAS ELECTRONIC MATERIALS LLC reassignment ROHM AND HAAS ELECTRONIC MATERIALS LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KWOK, RAYMUND W. M., LAU, DANNY
Publication of US20070052105A1 publication Critical patent/US20070052105A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C25D5/505—After-treatment of electroplated surfaces by heat-treatment of electroplated tin coatings, e.g. by melting
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/623—Porosity of the layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/028—Including graded layers in composition or in physical properties, e.g. density, porosity, grain size
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01016—Sulfur [S]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01084—Polonium [Po]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/939—Molten or fused coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708—Sn-base component
    • Y10T428/12722—Next to Group VIII metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Definitions

  • the present invention is directed to a low phosphorous containing metal duplex with a gold or gold alloy layer and method of making the low phosphorous metal duplex with the gold or gold alloy layer. More specifically, the present invention is directed to a low phosphorous containing metal duplex with a gold or gold alloy layer and method of making the low phosphorous metal duplex with the gold or gold alloy layer for inhibiting corrosion and improving solderability.
  • gold and gold alloys have been especially problematic in the electronic materials industry where corrosion may lead to faulty electrical contact between components in electronic devices.
  • gold and gold alloy coatings have been used in electronics and other applications for many years. In electronics they have been used as a solderable and corrosion resistive surface for contacts and connectors. They are also used in lead finishes for integrated circuit (IC) fabrication. However, gold finishes may not always prevent corrosion.
  • IC devices having IC units, lead frames and passive components, such as capacitors and transistors, find wide use in products including consumer electronics, household appliances, computers, automobiles, telecommunications, robotics and military equipment.
  • the IC unit encompasses IC chips and hybrid circuit nodules which include one or more of the IC chips and other electronic components on a plastic or ceramic support base.
  • Lead frames or connectors are a means to electrically interconnect an IC unit to external circuitry.
  • the lead frame is formed from electrically conductive material such as copper or copper alloys, or by stamping or etching a metal blank into a plurality of leads defining a central area in which the IC unit is mounted.
  • attachment techniques include wirebonding, soldering, die-attach and encapsulation.
  • soldering is the means of joining the IC to the assembly.
  • attachment requires a particular quality of the lead frame surface. Typically this means that the surface is corrosion free and ready for interaction with other components such as gold or aluminum wire, silver filled epoxy or solder.
  • solderability defined as the ability of the surface finish to melt and make a good solder joint to other components without defects that impair the electrical or mechanical connection.
  • soldering is an attachment procedure that usually involves three materials: (1) the substrate, (2) the component or other device which is desired to be attached to the substrate, and (3) the soldering material itself.
  • Corrosion is a natural occurring process because it is thermodynamically favorable. The rate of corrosion depends on temperature and time. The higher the temperature and the longer the exposure time, the thicker the corrosion.
  • Co-deposited carbon is determined by the plating chemistry one chooses to use.
  • Bright finishes contain higher carbon contents than matte finishes. Matte finishes are normally rougher than bright finishes, and provide an increased surface area which results in the formation of more corrosion than typically are formed with bright finishes.
  • Intermetallic compound formation is a chemical reaction between metal coating and the underlying metal substrate. The rate of formation depends on temperature and time as well. Higher temperatures and longer times result in a thicker layer of intermetallic compounds.
  • gold Certain physical properties of gold, such as its relative porosity, translate into problems when gold is deposited onto a substrate. For instance, gold's porosity can create interstices on the plated surface. These small spaces can contribute to corrosion or actually accelerate corrosion through the galvanic coupling of the gold layer with the underlying base metal layer. This is believed to be due to the base metal substrate and any accompanying underlying metal layers which may be exposed to corrosive elements via the pores in the gold outer surface.
  • Pore closure, sealing and other corrosion inhibition methods have been tried but with limited success. Potential mechanisms using organic precipitates having corrosion inhibitive effects are known in the art. Many of these compounds were typically soluble in organic solvents and were deemed not to provide long term corrosion protection. Other methods of pore sealing or pore blocking are based on the formation of insoluble compounds inside pores. Such insoluble complexes and precipitates as are apparent to those of skill in the field also are potential candidates for pore blocking.
  • U.S. Pat. No. 6,287,896 to Yeh et al. discloses a thick nickel-cobalt alloy coating a copper or copper alloy base plate.
  • the patent states that the thick nickel-cobalt layer is essential for reducing the effects of porosity and prevents the diffusion of copper from the base plate to the surface which is used for soldering.
  • a nickel or nickel alloy coats the thick nickel-cobalt layer to prevent it from cracking, an inherent problem of the nickel-cobalt layer.
  • a gold or gold alloy layer coats the nickel or nickel alloy layer. The gold or gold alloy layer allegedly improves solderability.
  • Methods include depositing a nickel layer on a substrate, depositing a layer of nickel phosphorous on the nickel layer and depositing a layer of gold or gold alloy on the nickel phosphorous layer, the nickel phosphorous layer includes 0.1 wt % to 10 wt % phosphorous.
  • the combination of the nickel and nickel phosphorous layers inhibits or prevents the effects of thermal ageing, thus decreasing pore formation in the gold or gold alloy layer.
  • the reduction of pores in the gold or gold alloy layer reduces or prevents corrosion of the underlying substrate. Solderability of the gold or gold alloy finish is thus improved.
  • methods include depositing 1 micron to 10 microns of a nickel layer on a substrate, depositing 0.1 micron to 5 microns of nickel phosphorous layer on the nickel layer, and depositing a gold or gold alloy layer on the nickel phosphorous layer, the nickel phosphorous layer includes 0.1 wt % to 10 wt % phosphorous.
  • articles include a nickel layer on a substrate, a nickel phosphorous layer on the nickel layer and a gold or gold alloy layer on the nickel phosphorous layer, the nickel phosphorous layer includes 0.1 wt % to 10 wt % phosphorous.
  • FIG. 1 is a photograph 50 ⁇ of a gold layer with pores on a nickel underlayer
  • FIG. 2 is a photograph 50 ⁇ of a gold layer with pores on a nickel phosphorous underlayer.
  • Methods include depositing a nickel layer on a substrate, depositing a layer of nickel phosphorous on the nickel layer and depositing a gold or gold alloy layer on the nickel phosphorous layer, the nickel phosphorous layer includes 0.1 wt % to 10 wt % of phosphorous.
  • the combination of the nickel and nickel phosphorous layers reduces the effects of thermal aging, thus decreasing pore formation in gold and gold alloy layers.
  • the reduction of pore formation in turn reduces or eliminates corrosion of the underlying metal substrate and also improves solderability of the gold or gold alloy layer.
  • the nickel and nickel phosphorous layers also reduce or inhibit the migration of nickel into the gold or gold alloy layer.
  • the substrate may be cleaned. Any suitable cleaning process may be used which is acceptable in the metallization arts.
  • the substrate is ultrasonically cleaned in a cleaning solution.
  • cleaning solutions may include silicate compounds, alkali metal carbonates and other compounds such as alkali metal hydroxides, glycol ethers and one or more chelating agents. Cleaning may be done at temperatures of from 30° C. to 80° C.
  • the substrate may be activated with a suitable acid such as a mineral acid.
  • a suitable acid such as a mineral acid.
  • Dilute concentrations of mineral acids are used.
  • An example of such an acid is sulfuric acid.
  • other mineral acids may be used such a hydrochloric acid and nitric acid.
  • the acids are used at conventional concentrations well known in the art. Activation typically is done at temperatures from room temperature to 30° C.
  • Bath temperatures range from 30° C. to 70° C. or such as from 40° C. to 60° C.
  • nickel plating baths include one or more sources of nickel ions.
  • Sources of nickel ions include, but are not limited to, nickel halides such as nickel chloride, nickel sulfate and nickel sulfamate.
  • Such sources of nickel ions are included in the nickel baths in amounts of 50 gm/L to 500 gm/L, or such as from 100 gm/L to 250 gm/L.
  • the nickel plating baths may include one or more additives.
  • additives include, but are not limited to, brighteners, grain refiners, levelers, surface active agents, antipitting agents, chelating agents, buffers, biocides and other additives known to those of skill in the art to tailor the bath to a desired bright or matt finish and throwing power.
  • Brighteners include, but are not limited to, aromatic sulfonates, sulfonamides, sulfonimides, aliphatic and aromatic-aliphatic olefinically or acetylenically unsaturated sulfonates, sulfonamides and sulfonimides.
  • brighteners examples include sodium o-sulfobenzimide, disodium 1,5-naphthalene disulfonate, trisodium 1,3,6-naphthalene trisulfonate, sodium benzene monosulfonate, dibenzene sulfonamide, sodium allyl sulfonate, sodium 3-chloro-2-butene-1-sulfonate, sodium ⁇ -styrene sulfonate, sodium propargyl sulfonate, monoallyl sulfamide, diallyl sulfamide and allyl sulfonamide.
  • Such brighteners may be used in conventional amounts such as 0.5 g/L to 10 g/L, or such as 2 g/L to 6 g/L.
  • brighteners include, but are not limited to, reaction products of epoxides with alphahydroxy acetylenic alcohols such as diethoxylated 2-butyne-1,4-diol or dipropoxylated 2-butyne-1,4-diol, N-heterocyclics, other acetylenic compounds, active sulfur compounds and dye-stuffs.
  • Examples of such brighteners are 1,4-di-( ⁇ -hydroxyethoxy)-2-butyne, 1,4-di-( ⁇ -hydroxy- ⁇ -chloropropoxy)-2-butyne, 1,4-di-( ⁇ -, ⁇ -epoxypropoxy)-2-butyne, 1,4-di-( ⁇ -hydroxy- ⁇ -butenoxy)-2-butyne, 1,4-di-(2′-hydroxy-4′-oxa-6′-heptenoxy)-2-butyne, N-(2,3-dichloro-2-propenyl)-pyridinium chloride, 2,4,6-trimethyl N-propargyl pyridinium bromide, N-allylquinaldinium bromide, 2-butyne-1,4-diol, propargyl alcohol, 2-methyl-3-butyn-2-ol, quinaldyl-N-propanesulfonic acid betaine, quinaldine dimethyl sulfate
  • Any suitable surface active agent may be used.
  • Such surface active agents include, but are not limited to, ionic surfactants such as cationic and anionic surfactants, non-ionic surfactants and amphoteric surfactants.
  • Surfactants may be used in conventional amounts such as, for example, 0.05 gm/L to 30 gm/L, or such as from 1 gm/L to 20 gm/L or such as from 5 gm/L to 10 gm/L.
  • a suitable surfactant is naphthalene sulfonated with 1 to 8 sulfonic acid groups (—SO 3 H).
  • examples of such surfactants are naphthalene-1,3,6-trissulfonic acid and naphthalene-1,3,7-trissulfonic acid.
  • the alkali metal salts such as the sodium and potassium salts also may be used.
  • surfactants examples include salts of alkyl hydrogen sulfates such as sodium lauryl sulfate, sodium lauryl ether-sulfate and sodium di-alkylsulfosuccinates.
  • surfactants which may be used are quaternary ammonium salts including perfluorinated quaternary amines such as perfluoro dodecyl trimethyl ammonium fluoride.
  • Suitable chelating agents include, but are not limited to, amino carboxylic acids, polycarboxylic acids and polyphosphonic acids. Such chelating agents may be used in conventional amounts such as 0.01 moles/L to 3 moles/L or such as from 0.1 moles/L to 0.5 moles/L.
  • the pH of the nickel baths may range from 1 to 10, or such as from 3 to 8.
  • the pH of the nickel baths may be maintained by a variety of means. Any desired acid or base may be used, and any inorganic acid, organic acid, inorganic base, or organic base may be used. Besides acids such as sulfuric acid, hydrochloric acid, or sulfamic acid, acids used as chelating agents such as acetic acid, amino acetic acid or ascorbic acid also may be used. Besides inorganic bases such as sodium hydroxide or potassium hydroxide and organic bases such as various types of amines, bases such as nickel carbonate also may be used. In addition, a pH buffering ingredient such as boric acid may be used if the pH tends to fluctuate due to operating conditions. The buffers may be added in amounts as needed to maintain a desired pH.
  • additives may be added to the nickel metal plating baths which are conventional and well known those of skill in the art. They are used in conventional amounts to tailor the nickel layer to a desired matt, semi-bright or bright finish.
  • Nickel is deposited on the substrate until a nickel layer of from 1 micron to 10 microns, or such as from 2 microns to 5 microns is formed on the substrate.
  • the nickel layer is then plated with a layer of nickel phosphorous using a nickel phosphorous bath.
  • the nickel phosphorous bath includes one or more sources of nickel ions as described above, and may include one or more of the additives as described above.
  • the nickel phosphorous bath includes one or more sources of phosphorous. Any suitable phosphorous acid or phosphoric acid or salt thereof and mixtures may be used. Phosphorous acids and phosphoric acids and their salts are included in the baths in amounts of 5 gm/L to 100 gm/L, or such as from 10 gm/L to 80 gm/L, or such as from 20 gm/L to 50 gm/L.
  • Phosphorous acid has the general formula: H 3 PO 3 and also is known as orthophosphorous acid.
  • Phosphoric acids include, but are not limited to, inorganic phosphoric acids such as phosphoric acid (H 3 PO 4 ), also known as orthophosphoric acid. Polyphosphoric acids also may be used. Inorganic phosphoric acids may be represented by the formula: H n+2 P n O 3n+1 , where n is an integer of 1 or greater. When n is an integer of 2 or greater, the formula represents a polyphosphoric acid. When the inorganic phosphoric acid is a polyphosphoric acid, typically, n is an integer such that the polyphosphoric acid has an average molecular weight of 110 to 1,500 atomic weight units. Typically, phosphorous acid is used.
  • Salts of phosphoric acids such as alkali metal phosphates and ammonium phosphate may be used.
  • Alkali metal phosphates include dibasic sodium phosphate, tribasic sodium phosphate, dibasic potassium phosphate and tribasic potassium phosphate.
  • Salts of the polyphosphoric acids also may be used. Mixtures of the inorganic phosphoric acids and their salts also may be used. Such acids are commercially available or may be made according to methods described in the literature.
  • the nickel phosphorous layer is deposited on the nickel layer at the same bath temperatures as the nickel layer is deposited on the substrate. Deposition continues until a nickel phosphorous layer of 0.1 microns to 5 microns or such as from 0.2 microns to 1 micron is deposited on the nickel layer to form a duplex.
  • the weight ratio of nickel to nickel phosphorous in the duplex is from 2:1 to 8:1.
  • the nickel and nickel phosphorous layers may be deposited by any suitable electrolytic deposition method known in the art. Conventional plating apparatus may be used to deposit the nickel and nickel phosphorous layers. Current densities may range from 1 ASD to 20 ASD, or such as from 5 ASD to 15 ASD.
  • the nickel and nickel phosphorous duplex layer is 2 microns to 3 microns thick.
  • a surface finish of gold or gold alloy is deposited on the nickel phosphorous layer.
  • the article formed by the methods described above includes a substrate plated with a nickel layer and a nickel phosphorous layer over the nickel layer to form the duplex.
  • Phosphorous content of the nickel phosphorous layer may range from 0.1 wt % to 10 wt %, or such as from 0.5 wt % to less than 10 wt %, or such as from 1 wt % to 9 wt %, or such as from 2 wt % to 8 wt %, or such as from 3 wt % to 7 wt %.
  • a gold or gold alloy layer is deposited over the nickel phosphorous layer to form an article.
  • duplex layers composed of the nickel and nickel phosphorous layers inhibit pore formation in the gold or gold alloy layer and inhibit nickel migration into the gold or gold alloy layer. Connectors soldered to the gold or gold alloy coated articles are more secure and less likely to separate than gold or gold alloy coated articles without the duplex layer.
  • Gold or gold alloy may be deposited on the nickel phosphorous layer using any suitable source of gold ions as well as alloying metal ions.
  • Sources of gold ions include, but are not limited to, sodium dicyanoaurate (I), ammonium dicyanoaurate (I) and other dicyanoauric acid (I) salts; potassium tetracyanoaurate (III), sodium tetracyanoaurate (III), ammonium tetracyanoaurate (III) and other tetracyanoauric acid (III) salts; gold (I) cyanide, gold (III) cyanide; dichloroauric acid (I) salts; tetrachloroauric acid (III), sodium tetrachloroaurate (III) and other tetrachloroauric acid (III) compounds; ammonium gold sulfite, potassium gold sulfite, sodium gold sulfite and other sulfurous acid gold salts; gold oxide, gold hydroxide and other alkali
  • Alloying metals include, but are not limited to, copper, nickel, zinc, cobalt, silver, the platinum group metals, cadmium, lead, mercury, arsenic, tin, selenium, tellurium, manganese, magnesium, indium, antimony, iron, bismuth and thallium. Typically the alloying metal is cobalt. Sources of such alloying metals are well known in the art. The sources of alloying metals are included in the bath in conventional amounts and vary widely depending on the type of alloying metal used.
  • the gold and gold alloy baths may include one or more additives.
  • additives include, but are not limited to, surfactants, brighteners, levelers, complexing agents, chelating agents, buffers and biocides. Such additives are included in conventional amounts and are well known to those of skill in the art.
  • the gold or gold alloy may be deposited on the nickel phosphorous layer by any suitable method known in the art. Such methods include, but are not limited to, electrolytic deposition and immersion deposition. Typically, the gold or gold alloy is deposited electrolytically. Current densities for depositing gold and gold alloys electrolytically range from 1 ASD to 30 ASD, or such as form 5 ASD to 20 ASD.
  • Thermal aging may be done by any suitable method known in the art. Presently, there are no standard thermal aging requirements and various methods are used. Such methods include, but are not limited to, steam aging and dry baking.
  • the nickel and nickel phosphorous duplex inhibits surface diffusion of nickel into the gold surface finish, thus solderability is improved.
  • the duplex In addition to preventing the diffusion of less noble metals into gold and gold alloys, the duplex also reduces or inhibits the porosity of the gold and gold alloy layers, and reduces oxygen penetration of the metal layers.
  • the reduction of the porosity of the gold and gold alloys reduces or prevents undesired oxidation of underlying metals. This in turn improves the solderability of the gold and gold alloy surface finish and decreases contact resistance.
  • the methods may be used to deposit the duplex of nickel and nickel phosphorous on any suitable substrate.
  • substrates are metals or metal alloys.
  • Suitable metals include, but are not limited to, copper, iron, and their alloys, stainless steel, and precious metals such as gold, platinum, palladium, silver and their alloys.
  • the substrates are copper, copper alloys, iron and iron alloys.
  • Suitable copper alloys include, but are not limited to, copper-tin, copper-silver, copper-gold, copper-silver-tin, copper-phosphorous-gold, copper-zinc, copper-silver-magnesium, copper-iron-zinc, copper-tin-nickel-silicon, copper-zirconium, copper-iron-phosphorous-zinc and copper-nickel-silicon-magnesium.
  • Suitable iron alloys include, but are not limited to, iron-copper and iron nickel.
  • Such substrates include, but are not limited to components of electrical devices such as printed wiring boards, connectors, bumps on wafers, lead frames as well as passive components such as resistors and capacitors for IC units.
  • Three (3) copper-tin alloy lead frames were ultrasonically cleaned at 65° C. for 30 seconds in a cleaning solution containing 100 g/L of RONACLEANTM CP-100, which is a silicate containing cleaning composition obtainable from Rohm and Haas Company, Philadelphia, Pa., U.S.A.
  • each lead frame was then immersed into a solution of 100 ml/L of technical grade sulfuric acid at room temperature for 10 seconds. Each lead frame was then electroplated with a nickel layer of 2 microns.
  • the nickel bath used to plate each lead frame had the formula disclosed in Table 1 below.
  • the pH of the nickel bath was 4 and the temperature of the bath was 50° C.
  • Each lead frame was then placed in a Hull cell containing the electrolytic nickel bath.
  • the lead frame functioned as the cathode and the anode was a sulfur/nickel electrode.
  • the nickel bath was paddle agitated during deposition.
  • the apparatus was connected to a conventional rectifier. Current density was at 10 ASD. Nickel deposition was done over a period of 90 seconds.
  • the nickel phosphorous bath had a pH of 1 and was at a temperature of 60° C. during nickel phosphorous deposition.
  • Nickel phosphorous was done in Hull cells with paddle agitation at a current density of 10 ASD for one lead frame and 5 ASD for the second lead frame.
  • Electroplating was done on one lead frame for 60 seconds (10 ASD) and on the second lead frame for 30 seconds (5 ASD).
  • the nickel phosphorous layer plated at 10 ASD had a phosphorous content of 6 wt %, and the nickel phosphorous layer plated at 5 ASD had a phosphorous content of 9 wt %.
  • the phosphorous content was measured by conventional energy dispersive X-ray spectroscopy. A 1 ⁇ 1 mm area was measured.
  • Each of the three lead frames was then plated with a gold layer 0.2 to 0.5 microns thick.
  • the gold electrolyte included 12 g/L of gold ions from sodium gold sulfite and conventional gold electrolyte additives. Gold plating was done at a current density of 3 ASD for 4 seconds at 35° C.
  • Each lead frame was then soldered with eutectic tin/lead solder at 235° C.
  • the soldered lead frames were then steam aged according to Military Specification 883C, Method 2003 which involves steam aging at 95° C. and 95% relative humidity for 8 hours. This simulated a shelf life of at least 6 months.
  • the zero crossing time was then determined for each lead frame for solderability performance after steam aging.
  • the zero crossing time was determined with Menisco ST-50 solderability tester.
  • the zero crossing time for the lead frame without the nickel phosphorous layer was 3.2 seconds
  • the zero crossing time for the lead frame with the 6 wt % phosphorous content was 1.8 seconds
  • the zero crossing time for the lead frame with the phosphorous content of 9 wt % was 0.9 seconds. Accordingly, the nickel and nickel phosphorous layers showed better solderability performance than the lead frame without the nickel and nickel phosphorous layers.
  • the pH of the nickel bath was 3 and the temperature of the bath was 50° C.
  • Each lead frame was placed in a Hull cell containing the electrolytic nickel bath. Nickel was deposited on the lead frames at a current density of 10 ASD. Nickel deposition was done over 80 seconds. The bath was paddle agitated during electroplating.
  • the phosphorous content of the nickel phosphorous layer was 9 wt %.
  • the pH of the bath was 1 and electroplating was done at 60° C. The electroplating was done in a Hull cell with paddle agitation. The current density was maintained at 5 ASD and done for 20 seconds.
  • Each lead frame was then plated with a gold layer of 0.2 to 0.5 microns.
  • the gold bath included 12 g/L of gold ions from sodium gold sulfite, and conventional gold electrolyte additives. Gold plating was done at a current density of 3 ASD for 4 seconds at 30° C.
  • each lead frame was then placed on a plastic holder in a dessicator. Fuming nitric acid vapor with a concentration greater than 65% was added to the dessicator for 1 hour at room temperature. The nitric acid was then rinsed off using deionized water. The gold surface of each lead frame was then placed under a Nomarski microscope at 50 ⁇ to examine the gold layers for any pore formation.
  • FIG. 1 shows the gold surface of the lead frame which was not plated with the nickel phosphorous layer. Numerous pores formed in the gold layer.
  • FIG. 2 shows the gold layer on the lead frame which contained the nickel phosphorous layer. Pore formation was sparse. Accordingly, the nickel and nickel phosphorous layers under the gold layer was able to reduce the formation of pores in gold.
  • Three (3) brass lead frames were ultrasonically cleaned using 100 g/L of ROANACLEANTM CP-100 at 65° C. for 30 seconds. After cleaning, each connector was then immersed into a solution of 100 ml/L of technical grade sulfuric acid at room temperature for 10 seconds. Each lead frame was then plated with a nickel layer of 2 microns using the nickel electrolyte in Table 1 above. Nickel deposition was done in a Hull cell at a pH of 4 and at a temperature of 50° C. The current density was 10 ASD and was done over 80 seconds.
  • nickel phosphorous electrolyte used was the same as that disclosed in Table 2 above.
  • the pH of the electrolyte was 2 and nickel phosphorous deposition was done at a temperature of 50° C.
  • the current density for one of the plating baths was 10 ASD and the other was 5 ASD.
  • Nickel phosphorous deposition was done over 20 seconds for each bath.
  • the lead frames were then electroplated with gold in a Hull cell at a current density of 3 ASD for 4 seconds.
  • the gold electrolyte included 12 g/L of gold ions from gold sulfite and conventional gold electrolyte additives.
  • the temperature of the bath was 30° C.
  • Each of the gold plated lead frames was then steam aged according to Military Specification 883C, Method 2003 which involves steam ageing at 95° C. and 95% relative humidity for 8 hours.
  • the lead frames were then tested for oxygen penetration into the nickel layers, and nickel migration into the gold layers.
  • the results in the table above show that the oxygen content of the metal layers of the lead frames which were plated with a nickel phosphorous layer were far below that of the lead frame with just the nickel layer.
  • the atomic% of oxygen in the metal layers of the lead frame with the nickel phosphorous layer containing 10 wt % of phosphorous had a high oxygen content of 5.2 atomic % at a depth of 100 ⁇ and a low oxygen content of 0 atomic % at 330 ⁇ .
  • the average atomic % oxygen for all depths was 4.1.
  • the lead frame with the phosphorous content of 7 wt % had a high oxygen content of 0.7 atomic % at 540 ⁇ and a low oxygen content of 0 atomic % at 200-510 ⁇ .
  • the average oxygen content for all depths was 2.6 atomic %.
  • the lead frame without the nickel phosphorous layer had a high oxygen content of 41.5 atomic % at 200 ⁇ and a low oxygen content of 34.3 atomic % at 100 ⁇ .
  • the average oxygen content for all depths was 36 atomic %.
  • the nickel phosphorous layers reduced oxygen penetration.
  • Example 2 is repeated except that an aqueous gold cobalt alloy electroplating bath is used to plate a gold-cobalt layer on the nickel or nickel phosphorous layer.
  • the gold-cobalt alloy bath includes 4 g/L of potassium gold cyanide, 1 g/L of cobalt sulfate (0.25 g/L of cobalt ions) and 150 g/L of methylene phosphonic acid.
  • the pH of the aqueous gold-cobalt bath is 4.
  • the pH of the bath is maintained with potassium hydroxide.
  • the bath is maintained at 40° C. and the current density is 1 ASD. Electroplating is done until a 0.2 to 0.5 microns layer of gold-cobalt is formed on the nickel phosphorous layer of each lead frame.
  • Each lead frame is then placed on a plastic holder in a dessicator and exposed to fuming nitric acid as in Example 2.
  • the gold-cobalt layer on the lead frame with the duplex is expected to have fewer pores than the gold-cobalt layer on the lead frame with just the nickel layer.
  • Example 4 is repeated except that the aqueous gold-cobalt alloy electroplating bath includes 4 g/L of potassium gold cyanide, 1 g/L of cobalt as tetrapotassium salt of cobalt methylene phosphonic acid, 124 g/L of tripotassium citrate, 29 g/L of citric acid and 45 g/L of monopotassium phosphate.
  • the pH of the bath is maintained at 5, and the bath temperature is maintained to 35° C.
  • the current density is at 1 ASD and plating is done to form a 0.2 to 0.5 microns layer of gold-cobalt on each lead frame.
  • the lead frame with the duplex layer After treating each lead frame with fuming nitric acid, the lead frame with the duplex layer is expected to have a gold-cobalt layer with fewer pores than the gold-cobalt layer on the lead frame without the duplex layer.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Laminated Bodies (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
US11/510,883 2005-09-07 2006-08-28 Metal duplex method Abandoned US20070052105A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/510,883 US20070052105A1 (en) 2005-09-07 2006-08-28 Metal duplex method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71457505P 2005-09-07 2005-09-07
US11/510,883 US20070052105A1 (en) 2005-09-07 2006-08-28 Metal duplex method

Publications (1)

Publication Number Publication Date
US20070052105A1 true US20070052105A1 (en) 2007-03-08

Family

ID=37564172

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/511,155 Expired - Fee Related US7615255B2 (en) 2005-09-07 2006-08-28 Metal duplex method
US11/510,883 Abandoned US20070052105A1 (en) 2005-09-07 2006-08-28 Metal duplex method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/511,155 Expired - Fee Related US7615255B2 (en) 2005-09-07 2006-08-28 Metal duplex method

Country Status (8)

Country Link
US (2) US7615255B2 (ja)
EP (2) EP1762640A3 (ja)
JP (2) JP2007070730A (ja)
KR (2) KR20070028266A (ja)
CN (2) CN1936095A (ja)
HK (1) HK1101603A1 (ja)
SG (2) SG131046A1 (ja)
TW (2) TWI371797B (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054138A1 (en) * 2005-09-07 2007-03-08 Rohm And Haas Electronic Materials Llc Metal duplex method
US20080014437A1 (en) * 2006-07-11 2008-01-17 Infineon Technologies Ag Component and associated connection wire
EP2103712A1 (en) * 2008-03-20 2009-09-23 Atotech Deutschland Gmbh Ni-P layer system and process for its preparation
CN102978671A (zh) * 2012-12-03 2013-03-20 山东恒汇电子科技有限公司 一种智能卡封装框架的电镀方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4988165B2 (ja) * 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
US20080283952A1 (en) * 2005-12-24 2008-11-20 Choi Hyun-Kyu Semiconductor Package, Method of Fabricating the Same and Semiconductor Package Module For Image Sensor
US8354692B2 (en) * 2006-03-15 2013-01-15 Infineon Technologies Ag Vertical semiconductor power switch, electronic component and methods of producing the same
US9385449B2 (en) * 2009-02-16 2016-07-05 Carlisle Interconnect Technologies, Inc. Terminal/connector having integral oxide breaker element
TWI447878B (zh) * 2009-08-28 2014-08-01 Great Team Backend Foundry Inc 增加通路及降低電阻之電晶體連接結構
US9175400B2 (en) * 2009-10-28 2015-11-03 Enthone Inc. Immersion tin silver plating in electronics manufacture
CN101784165B (zh) * 2010-03-19 2014-11-05 中兴通讯股份有限公司 一种印制电路板耐腐蚀可焊涂层处理方法
DE102011102052A1 (de) * 2011-05-19 2012-11-22 Anke Gmbh & Co. Kg Netzmittel für elektrolytische Anwendung und dessen Verwendung
JP5767521B2 (ja) * 2011-07-21 2015-08-19 古河電気工業株式会社 光半導体装置用リードフレーム及びその製造方法
JP6046406B2 (ja) * 2011-07-26 2016-12-14 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 高温耐性銀コート基体
CN102983115B (zh) * 2012-12-03 2015-10-28 恒汇电子科技有限公司 一种智能卡封装框架
DE102013105392A1 (de) * 2013-05-27 2014-11-27 Thyssenkrupp Rasselstein Gmbh Verfahren zur Beschichtung eines Stahlblechs mit einer Metallschicht
JP5748019B1 (ja) * 2014-08-27 2015-07-15 株式会社オートネットワーク技術研究所 ピン端子及び端子材料
CN107190289A (zh) * 2017-06-14 2017-09-22 深圳市呈永鑫精密电路有限公司 一种低磁高抗环境性的pcb板及其制备方法

Citations (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049471A (en) * 1976-07-26 1977-09-20 Bell Telephone Laboratories, Incorporated Technique for stabilizing contact resistance of gold plated electrical contacts
US4053373A (en) * 1975-07-09 1977-10-11 M & T Chemicals Inc. Electroplating of nickel, cobalt, nickel-cobalt, nickel-iron, cobalt-iron and nickel-iron-cobalt deposits
US4102755A (en) * 1973-06-01 1978-07-25 Langbein-Pfanhauser Werke Ag Method of and electrolytic bath for the electrodeposition of semibright nickel and nickel-cobalt coatings upon a metal surface
US4186064A (en) * 1977-07-20 1980-01-29 Technic, Inc. Method and electrolyte for electrodeposition of bright gold and gold alloys
US4199416A (en) * 1977-05-03 1980-04-22 Johnson, Matthey & Co., Limited Composition for the electroplating of gold
US4230493A (en) * 1978-09-22 1980-10-28 E. I. Du Pont De Nemours And Company Gold conductor compositions
US4880507A (en) * 1987-12-10 1989-11-14 Learonal, Inc. Tin, lead or tin/lead alloy electrolytes for high speed electroplating
US4888574A (en) * 1985-05-29 1989-12-19 501 Ohmega Electronics, Inc. Circuit board material and method of making
US4994155A (en) * 1988-12-09 1991-02-19 Learonal, Inc. High speed tin, lead or tin/lead alloy electroplating
US5164069A (en) * 1990-11-05 1992-11-17 Shipley Company Inc. Nickel electroplating solution and acetylenic compounds therefor
US5174887A (en) * 1987-12-10 1992-12-29 Learonal, Inc. High speed electroplating of tinplate
US5182172A (en) * 1991-04-18 1993-01-26 Bausch & Lomb Incorporated Post-plating passivation treatment
US5492615A (en) * 1994-11-22 1996-02-20 Learonal Inc. Cyclodextrin stabilization of organic metal finishing additives in aqueous metal treating baths
US5667849A (en) * 1992-03-27 1997-09-16 The Louis Berkman Company Method for coating a metal strip
US5675177A (en) * 1995-06-26 1997-10-07 Lucent Technologies Inc. Ultra-thin noble metal coatings for electronic packaging
US5871631A (en) * 1996-01-30 1999-02-16 Nkk Corporation Acidic tin-plating bath and additive therefor
US5916696A (en) * 1996-06-06 1999-06-29 Lucent Technologies Inc. Conformable nickel coating and process for coating an article with a conformable nickel coating
US6036833A (en) * 1995-06-21 2000-03-14 Tang; Peter Torben Electroplating method of forming platings of nickel
US6210556B1 (en) * 1998-02-12 2001-04-03 Learonal, Inc. Electrolyte and tin-silver electroplating process
US6259161B1 (en) * 1999-06-18 2001-07-10 Mitsubishi Denki Kabushiki Kaisha Circuit electrode connected to a pattern formed on an organic substrate and method of forming the same
US6287896B1 (en) * 1999-04-28 2001-09-11 Industrial Technology Research Institute Method for manufacturing lead frames and lead frame material for semiconductor device
US6452258B1 (en) * 2000-11-06 2002-09-17 Lucent Technologies Inc. Ultra-thin composite surface finish for electronic packaging
US20020185716A1 (en) * 2001-05-11 2002-12-12 Abys Joseph Anthony Metal article coated with multilayer finish inhibiting whisker growth
US20020192492A1 (en) * 2001-05-11 2002-12-19 Abys Joseph Anthony Metal article coated with near-surface doped tin or tin alloy
US20030025182A1 (en) * 2001-06-22 2003-02-06 Abys Joseph A. Metal article coated with tin or tin alloy under tensile stress to inhibit whisker growth
US6736886B2 (en) * 2001-07-02 2004-05-18 Shipley Company, L.L.C. Electroless gold plating bath and method
US20040099340A1 (en) * 2002-11-27 2004-05-27 Yun Zhang Reduction of surface oxidation during electroplating
US6773568B2 (en) * 2000-07-01 2004-08-10 Shipley Company, L.L.C. Metal alloy compositions and plating methods related thereto
US6797142B2 (en) * 2001-05-24 2004-09-28 Shipley Company, L.L.C. Tin plating
US6858122B2 (en) * 2001-12-28 2005-02-22 Shipley Company, L.L.C. Nickel electroplating solution
US20050048309A1 (en) * 2003-08-25 2005-03-03 Naoki Haketa Metal member coated with metal layers
US20050249969A1 (en) * 2004-05-04 2005-11-10 Enthone Inc. Preserving solderability and inhibiting whisker growth in tin surfaces of electronic components

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5937756B2 (ja) * 1978-02-17 1984-09-11 三菱電機株式会社 めつき方法
DE3476684D1 (en) 1984-05-11 1989-03-16 Burlington Industries Inc Amorphous transition metal alloy, thin gold coated, electrical contact
JPH0684546B2 (ja) * 1984-10-26 1994-10-26 京セラ株式会社 電子部品
JPH01242798A (ja) * 1988-03-25 1989-09-27 Nkk Corp 溶接缶用薄鍍金ぶりきの製造方法及び装置
JP2633363B2 (ja) * 1989-09-18 1997-07-23 川崎製鉄株式会社 電気錫めつき鋼帯の溶融光輝化処理方法および装置
US5235139A (en) * 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
EP0582411A3 (en) * 1992-07-31 1995-02-22 Gen Electric Chemical metallization processes.
JPH0798996B2 (ja) * 1992-12-28 1995-10-25 株式会社八光電機製作所 金メッキ処理を施したコネクター用接触子
JPH06228790A (ja) * 1993-02-03 1994-08-16 Kawasaki Steel Corp 薄目付電気錫めっき鋼帯のリフロー処理方法
JP3216341B2 (ja) * 1993-06-29 2001-10-09 ぺんてる株式会社 貴金属めっきの製造方法
JPH0741985A (ja) 1993-07-29 1995-02-10 Pentel Kk ニッケル−リン合金めっきの製造方法
JPH10233121A (ja) * 1997-02-18 1998-09-02 Hitachi Cable Ltd リードワイヤ
JP3667926B2 (ja) * 1997-03-14 2005-07-06 株式会社神戸製鋼所 金／ニッケル／ニッケル３層めっき銅合金電子部品およびその製造方法
JP2000077593A (ja) * 1998-08-27 2000-03-14 Hitachi Cable Ltd 半導体用リードフレーム
US6613451B1 (en) 1998-09-11 2003-09-02 Nippon Mining & Metals Co., Ltd. Metallic material
JP2000124268A (ja) * 1998-10-12 2000-04-28 Hitachi Cable Ltd 半導体装置用テープキャリア
JP4130508B2 (ja) * 1999-01-22 2008-08-06 富士通株式会社 半田接合方法及び電子装置の製造方法
JP2001040495A (ja) * 1999-07-28 2001-02-13 Nippon Mining & Metals Co Ltd プレス破面の耐食性に優れる錫又は錫合金めっき材及びその製造方法
JP2001274539A (ja) * 2000-03-28 2001-10-05 Matsushita Electric Works Ltd 電子デバイス搭載プリント配線板の電極接合方法
JP2001355094A (ja) * 2000-06-13 2001-12-25 Citizen Watch Co Ltd 装飾被膜を有する基材およびその製造方法
JP2002155393A (ja) * 2000-11-15 2002-05-31 Nippon Mining & Metals Co Ltd ばね性に優れためっき材
JP3910363B2 (ja) * 2000-12-28 2007-04-25 富士通株式会社 外部接続端子
JP2002256481A (ja) * 2001-03-01 2002-09-11 Nisshin Steel Co Ltd はんだ濡れ性，耐食性に優れた複層めっき鋼板
CN1407141A (zh) * 2001-03-16 2003-04-02 希普雷公司 镀锡
JP2002302790A (ja) * 2001-04-06 2002-10-18 Ishihara Chem Co Ltd スズ−銅合金メッキ方法
JP2002317295A (ja) * 2001-04-19 2002-10-31 Furukawa Electric Co Ltd:The リフロー処理Ｓｎ合金めっき材料、それを用いた嵌合型接続端子
JP2003045180A (ja) * 2001-07-27 2003-02-14 Mitsubishi Electric Corp 半導体装置
JP2003129283A (ja) * 2001-10-18 2003-05-08 Hitachi Ltd メッキ処理装置及びそれを用いた半導体装置の製造方法
US6780225B2 (en) * 2002-05-24 2004-08-24 Vitronics Soltec, Inc. Reflow oven gas management system and method
JP3989795B2 (ja) * 2002-08-09 2007-10-10 エヌ・イーケムキャット株式会社 電解硬質金めっき液及びそれを用いためっき方法
JP2004307954A (ja) * 2003-04-08 2004-11-04 Matsushita Electric Works Ltd めっき形成部材
US7306133B2 (en) * 2003-04-25 2007-12-11 St Assembly Test Services Ltd. System for fabricating an integrated circuit package on a printed circuit board
JP2005109373A (ja) * 2003-10-02 2005-04-21 Fuji Electric Device Technology Co Ltd 半導体装置
JP2005154819A (ja) * 2003-11-25 2005-06-16 Kobe Steel Ltd 嵌合型接続端子
JP4362599B2 (ja) * 2004-03-05 2009-11-11 Ｄｏｗａメタルテック株式会社 金属部材およびそれを用いた電気接点
JP2006312762A (ja) * 2005-05-09 2006-11-16 Hirai Seimitsu:Kk 錫めっき鉄系金属材料
US7615255B2 (en) * 2005-09-07 2009-11-10 Rohm And Haas Electronic Materials Llc Metal duplex method

Patent Citations (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102755A (en) * 1973-06-01 1978-07-25 Langbein-Pfanhauser Werke Ag Method of and electrolytic bath for the electrodeposition of semibright nickel and nickel-cobalt coatings upon a metal surface
US4053373A (en) * 1975-07-09 1977-10-11 M & T Chemicals Inc. Electroplating of nickel, cobalt, nickel-cobalt, nickel-iron, cobalt-iron and nickel-iron-cobalt deposits
US4049471A (en) * 1976-07-26 1977-09-20 Bell Telephone Laboratories, Incorporated Technique for stabilizing contact resistance of gold plated electrical contacts
US4199416A (en) * 1977-05-03 1980-04-22 Johnson, Matthey & Co., Limited Composition for the electroplating of gold
US4186064A (en) * 1977-07-20 1980-01-29 Technic, Inc. Method and electrolyte for electrodeposition of bright gold and gold alloys
US4230493A (en) * 1978-09-22 1980-10-28 E. I. Du Pont De Nemours And Company Gold conductor compositions
US4888574A (en) * 1985-05-29 1989-12-19 501 Ohmega Electronics, Inc. Circuit board material and method of making
US5174887A (en) * 1987-12-10 1992-12-29 Learonal, Inc. High speed electroplating of tinplate
US4880507A (en) * 1987-12-10 1989-11-14 Learonal, Inc. Tin, lead or tin/lead alloy electrolytes for high speed electroplating
US4994155A (en) * 1988-12-09 1991-02-19 Learonal, Inc. High speed tin, lead or tin/lead alloy electroplating
US5164069A (en) * 1990-11-05 1992-11-17 Shipley Company Inc. Nickel electroplating solution and acetylenic compounds therefor
US5182172A (en) * 1991-04-18 1993-01-26 Bausch & Lomb Incorporated Post-plating passivation treatment
US5667849A (en) * 1992-03-27 1997-09-16 The Louis Berkman Company Method for coating a metal strip
US5492615A (en) * 1994-11-22 1996-02-20 Learonal Inc. Cyclodextrin stabilization of organic metal finishing additives in aqueous metal treating baths
US6036833A (en) * 1995-06-21 2000-03-14 Tang; Peter Torben Electroplating method of forming platings of nickel
US5675177A (en) * 1995-06-26 1997-10-07 Lucent Technologies Inc. Ultra-thin noble metal coatings for electronic packaging
US5871631A (en) * 1996-01-30 1999-02-16 Nkk Corporation Acidic tin-plating bath and additive therefor
US5916696A (en) * 1996-06-06 1999-06-29 Lucent Technologies Inc. Conformable nickel coating and process for coating an article with a conformable nickel coating
US6210556B1 (en) * 1998-02-12 2001-04-03 Learonal, Inc. Electrolyte and tin-silver electroplating process
US6287896B1 (en) * 1999-04-28 2001-09-11 Industrial Technology Research Institute Method for manufacturing lead frames and lead frame material for semiconductor device
US6259161B1 (en) * 1999-06-18 2001-07-10 Mitsubishi Denki Kabushiki Kaisha Circuit electrode connected to a pattern formed on an organic substrate and method of forming the same
US6773568B2 (en) * 2000-07-01 2004-08-10 Shipley Company, L.L.C. Metal alloy compositions and plating methods related thereto
US6452258B1 (en) * 2000-11-06 2002-09-17 Lucent Technologies Inc. Ultra-thin composite surface finish for electronic packaging
US20020192492A1 (en) * 2001-05-11 2002-12-19 Abys Joseph Anthony Metal article coated with near-surface doped tin or tin alloy
US20020185716A1 (en) * 2001-05-11 2002-12-12 Abys Joseph Anthony Metal article coated with multilayer finish inhibiting whisker growth
US6797142B2 (en) * 2001-05-24 2004-09-28 Shipley Company, L.L.C. Tin plating
US20030025182A1 (en) * 2001-06-22 2003-02-06 Abys Joseph A. Metal article coated with tin or tin alloy under tensile stress to inhibit whisker growth
US6736886B2 (en) * 2001-07-02 2004-05-18 Shipley Company, L.L.C. Electroless gold plating bath and method
US6858122B2 (en) * 2001-12-28 2005-02-22 Shipley Company, L.L.C. Nickel electroplating solution
US20040099340A1 (en) * 2002-11-27 2004-05-27 Yun Zhang Reduction of surface oxidation during electroplating
US20050048309A1 (en) * 2003-08-25 2005-03-03 Naoki Haketa Metal member coated with metal layers
US20050249969A1 (en) * 2004-05-04 2005-11-10 Enthone Inc. Preserving solderability and inhibiting whisker growth in tin surfaces of electronic components

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054138A1 (en) * 2005-09-07 2007-03-08 Rohm And Haas Electronic Materials Llc Metal duplex method
US7615255B2 (en) * 2005-09-07 2009-11-10 Rohm And Haas Electronic Materials Llc Metal duplex method
US20080014437A1 (en) * 2006-07-11 2008-01-17 Infineon Technologies Ag Component and associated connection wire
EP2103712A1 (en) * 2008-03-20 2009-09-23 Atotech Deutschland Gmbh Ni-P layer system and process for its preparation
WO2009115192A3 (en) * 2008-03-20 2009-12-10 Atotech Deutschland Gmbh Ni-p layer system and process for its preparation
US20100326713A1 (en) * 2008-03-20 2010-12-30 Atotech Deutschland Gmbh Ni-p layer system and process for its preparation
US8304658B2 (en) 2008-03-20 2012-11-06 Atotech Deutschland Gmbh Ni-P layer system and process for its preparation
CN102978671A (zh) * 2012-12-03 2013-03-20 山东恒汇电子科技有限公司 一种智能卡封装框架的电镀方法

Also Published As

Publication number Publication date
CN1936095A (zh) 2007-03-28
EP1762641A3 (en) 2008-05-07
US20070054138A1 (en) 2007-03-08
EP1762640A2 (en) 2007-03-14
EP1762640A3 (en) 2008-05-21
US7615255B2 (en) 2009-11-10
JP5026031B2 (ja) 2012-09-12
SG131043A1 (en) 2007-04-26
CN1936094A (zh) 2007-03-28
TW200714732A (en) 2007-04-16
SG131046A1 (en) 2007-04-26
KR20070028265A (ko) 2007-03-12
TW200717658A (en) 2007-05-01
HK1101603A1 (en) 2007-10-18
TWI371797B (en) 2012-09-01
JP2007070731A (ja) 2007-03-22
KR20070028266A (ko) 2007-03-12
JP2007070730A (ja) 2007-03-22
CN1936094B (zh) 2011-06-22
TWI326717B (en) 2010-07-01
EP1762641A2 (en) 2007-03-14

Similar Documents

Publication Publication Date Title
US20070052105A1 (en) Metal duplex method
EP1716949B1 (en) Immersion method
JP4603812B2 (ja) 改良されたスズめっき方法
KR101502804B1 (ko) Ｐｄ 및 Ｐｄ-Ｎｉ 전해질 욕조
US5160422A (en) Bath for immersion plating tin-lead alloys
US10508348B2 (en) Environmentally friendly nickel electroplating compositions and methods
EP3284849A1 (en) Multi-layer electrical contact element
JP2016522327A (ja) 銀−スズ合金の電気めっき浴
KR101270770B1 (ko) 인쇄회로기판의 도금방법
US7479305B2 (en) Immersion plating of silver
US10458032B2 (en) Environmentally friendly nickel electroplating compositions and methods
JP3910028B2 (ja) チップ型セラミックス電子部品の電極形成法
JPH10284667A (ja) 耐食性、耐酸化性に優れる電気電子機器用部品材料、及びその製造方法
JP2000012762A (ja) 耐食性に優れる電気電子機器用部品材料、及びその製造方法
US20240124999A1 (en) Nickel electroplating compositions for rough nickel
TW202225489A (zh) 含有鎳電鍍皮膜之鍍敷結構體及引線框架
KR20240043110A (ko) 거친 니켈을 위한 니켈 전기도금 조성물
WO2006113816A2 (en) Underlayer for reducing surface oxidation of plated deposits
KR20010008454A (ko) 비지에이 패키지 소자의 팔라듐 또는 팔라듐 합금 도금방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: ROHM AND HAAS ELECTRONIC MATERIALS LLC, MASSACHUSE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LAU, DANNY;KWOK, RAYMUND W. M.;REEL/FRAME:018237/0257

Effective date: 20060522

STCB Information on status: application discontinuation

Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION