JP2005057291A - 集積型fet及びショットキー装置 - Google Patents
集積型fet及びショットキー装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims description 29
- 239000004020 conductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 229910008484 TiSi Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 230000005669 field effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract
【解決手段】 半導体装置は共通ダイに形成されたショットキー装置及びMOSFETのようなトレンチ型半導体スイッチング装置を含む
【選択図】 図1
Description
10 半導体装置
12 ショットキー領域
14 ゲート構造
16 高濃度基板
18 低濃度基板
20 トレンチ
22 ゲート酸化物
24 酸化物層
26 導電材料
28 ベース領域
32 ディプレッション
36 メサ
38 トレンチ
42 コンタクト
44 絶縁プラグ
50 ディープディプレッション
64 フォトレジスト層
70 ウィンドウ
90 カウンタードープ領域
92 高濃度にドープされた領域
Claims (22)
- 半導体スイッチング装置及びショットキー装置が形成されたダイを備え、
前記半導体スイッチング装置は複数のトレンチを含み、、各々のトレンチは一対の対向する側壁及び底部壁を含み、各々のトレンチは前記ダイの内部において前記ダイの最上面からドリフト領域まで延伸するものであり、第1の導電型のチャネル領域が前記ダイに形成されかつ前記トレンチの側壁に隣接して配置しており、ゲート絶縁層が各チャネル領域に隣接するトレンチの各側壁上に備えられ、導電ゲート材料が前記トレンチ内に含まれかつ前記ゲート絶縁層によって前記チャネル領域から絶縁され、前記チャネル領域の導電型に反対の第2の導電型の領域がそれぞれ各トレンチの側壁に備えられかつそれぞれが前記ダイの最上面から各チャネル領域まで延伸するものであり:
前記ショットキー装置は、前記ダイの最上面に配置されかつその最上面の一部にショットキー接触するショットキーバリアを含み、
第1のコンタクトが前記ショットキーバリア及び前記第2の導電型の前記領域に接触するものである半導体装置。 - 前記第1のコンタクトの反対側に前記ダイの主面に接触する第2のコンタクトを備えた請求項1に記載の半導体装置。
- 前記半導体スイッチング装置はMOSFETである請求項1に記載の半導体装置。
- 前記ショットキー装置がTiSi2を備えた請求項1に記載の半導体装置。
- 前記ショットキー装置が前記ダイに形成されたメサの主面全体に配置された請求項1に記載の半導体装置。
- 前記ショットキー装置がメサであって両側にそれぞれ一のトレンチを有するメサを備え、各トレンチはその側壁及び底部に絶縁層を有しかつ導電材料を有する請求項1に記載の半導体装置。
- 前記ショットキーバリアは前記トレンチの前記側壁全体に拡がっている請求項6に記載の半導体装置。
- 前記第2の導電型の前記領域の各ペア間に配置されかつ前記第1のコンタクトに接触する前記チャネル領域と同じ導電型の高導電性領域を備えた請求項1に記載の半導体装置。
- 前記高導電性領域が前記ダイのリセスの底部に位置している請求項8に記載の半導体装置。
- 前記トレンチのそれぞれがその底部に厚い酸化層を含む請求項1に記載の半導体装置。
- さらにターミネーション構造を含み、前記ターミネーション構造は前記チャネル領域の下方の深さにまで前記ダイに形成されたディプレッションから成り、第1の絶縁層が前記ディプレッションの主面全体に形成され、導電層が前記絶縁層全体に形成され、第2の絶縁層が前記導電層全体に形成され、ターミネーションコンタクトが前記第2の絶縁層全体に形成され、前記ターミネーションコンタクトが前記第2の絶縁層を介して前記導電層に電気的に接触する請求項1に記載の半導体装置。
- 半導体ダイを備える段階と;
前記ダイにショットキー装置を形成する段階と;
前記ダイに、少なくとも一の電力ノードを含むトレンチ型半導体スイッチング装置を形成する段階と;
ショットキー装置と前記少なくとも一の電力ノードとに接触する共通の第1のコンタクトを形成する段階と;を備えた半導体装置を製造する方法。 - 前記トレンチ型半導体スイッチング装置がトレンチ型MOSFETである請求項12に記載の方法。
- 前記ショットキー装置がTiSi2から成るショットキーバリアを含む請求項12に記載の方法。
- 前記ショットキーバリアが前記ダイの最上面の一部の上に配置してその一部に接触する請求項14に記載の方法。
- 前記ショットキーバリアが前記ダイに形成されたメサの一部の上に配置してその一部に接触する請求項15に記載の方法。
- 前記メサの両側にそれぞれ一のトレンチを備え、各トレンチはその側壁に酸化物を備えかつ導電材料を含み、前記ショットキーバリアが前記導電材料にショットキー接触する請求項16に記載の方法。
- ショットキー装置とMOSゲートスイッチング装置とが形成されたダイを備え、前記ショットキー装置は前記ダイの表面に形成された複数のショットキー領域を含み、前記ゲートスイッチング装置が複数のゲート構造を含み、各構造がトレンチを含みこのトレンチの側壁上に絶縁層が形成され導電電極を有するものであり、前記ゲート構造が群として形成され、ショットキー領域だけ互いに離隔された半導体装置。
- 前記MOSゲートスイッチング装置がMOSFETである請求項18に記載の半導体装置。
- 各ショットキー領域がTiSi2から成るショットキーバリアを含む請求項18に記載の半導体装置。
- 各ショットキー領域が前記ダイに形成されたメサの主面全体に配置された請求項20に記載の半導体装置。
- 各ショットキー領域がさらに片側にそれぞれ一のトレンチを有するメサを備え、各トレンチがその側壁及び底部に絶縁層を有しかつ導電材料を収容する請求項18に記載の半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/633,824 US6987305B2 (en) | 2003-08-04 | 2003-08-04 | Integrated FET and schottky device |
US10/633,824 | 2003-08-04 |
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JP2005057291A true JP2005057291A (ja) | 2005-03-03 |
JP4843204B2 JP4843204B2 (ja) | 2011-12-21 |
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JP (1) | JP4843204B2 (ja) |
CN (2) | CN101075581B (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008270811A (ja) * | 2007-04-19 | 2008-11-06 | Vishay-Siliconix | トレンチ金属酸化物半導体 |
JP2009260271A (ja) * | 2008-03-28 | 2009-11-05 | Toshiba Corp | 半導体装置及びdc−dcコンバータ |
US8564028B2 (en) | 2008-04-17 | 2013-10-22 | Fuji Electric Co., Ltd. | Low on-resistance wide band gap semiconductor device and method for producing the same |
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US7667264B2 (en) * | 2004-09-27 | 2010-02-23 | Alpha And Omega Semiconductor Limited | Shallow source MOSFET |
US20060197148A1 (en) * | 2005-02-04 | 2006-09-07 | Hsu Hsiu-Wen | Trench power moset and method for fabricating the same |
US8283723B2 (en) * | 2005-02-11 | 2012-10-09 | Alpha & Omega Semiconductor Limited | MOS device with low injection diode |
US8362547B2 (en) | 2005-02-11 | 2013-01-29 | Alpha & Omega Semiconductor Limited | MOS device with Schottky barrier controlling layer |
US8093651B2 (en) * | 2005-02-11 | 2012-01-10 | Alpha & Omega Semiconductor Limited | MOS device with integrated schottky diode in active region contact trench |
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JP2008270811A (ja) * | 2007-04-19 | 2008-11-06 | Vishay-Siliconix | トレンチ金属酸化物半導体 |
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Also Published As
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US6987305B2 (en) | 2006-01-17 |
US20060035422A1 (en) | 2006-02-16 |
JP4843204B2 (ja) | 2011-12-21 |
DE102004036330B4 (de) | 2018-04-05 |
TW200507237A (en) | 2005-02-16 |
US7510953B2 (en) | 2009-03-31 |
CN101075581B (zh) | 2010-06-09 |
TWI302028B (en) | 2008-10-11 |
DE102004036330A1 (de) | 2005-03-17 |
CN1581510A (zh) | 2005-02-16 |
CN100409456C (zh) | 2008-08-06 |
US20050029585A1 (en) | 2005-02-10 |
CN101075581A (zh) | 2007-11-21 |
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