JPS5115394B1 - - Google Patents

Info

Publication number
JPS5115394B1
JPS5115394B1 JP44092514A JP9251469A JPS5115394B1 JP S5115394 B1 JPS5115394 B1 JP S5115394B1 JP 44092514 A JP44092514 A JP 44092514A JP 9251469 A JP9251469 A JP 9251469A JP S5115394 B1 JPS5115394 B1 JP S5115394B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44092514A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44092514A priority Critical patent/JPS5115394B1/ja
Priority to GB2013170A priority patent/GB1312802A/en
Priority to DE19702024824 priority patent/DE2024824A1/de
Priority to NL707007504A priority patent/NL147582B/xx
Priority to US00298005A priority patent/US3798514A/en
Publication of JPS5115394B1 publication Critical patent/JPS5115394B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/168—V-Grooves
JP44092514A 1969-11-20 1969-11-20 Pending JPS5115394B1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP44092514A JPS5115394B1 (ja) 1969-11-20 1969-11-20
GB2013170A GB1312802A (en) 1969-11-20 1970-04-27 Field effect transistor
DE19702024824 DE2024824A1 (de) 1969-11-20 1970-05-21 Feldeffekttransistor
NL707007504A NL147582B (nl) 1969-11-20 1970-05-25 Schakeling van een geisoleerde veldeffecttransistor.
US00298005A US3798514A (en) 1969-11-20 1972-10-16 High frequency insulated gate field effect transistor with protective diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44092514A JPS5115394B1 (ja) 1969-11-20 1969-11-20

Publications (1)

Publication Number Publication Date
JPS5115394B1 true JPS5115394B1 (ja) 1976-05-17

Family

ID=14056411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44092514A Pending JPS5115394B1 (ja) 1969-11-20 1969-11-20

Country Status (5)

Country Link
US (1) US3798514A (ja)
JP (1) JPS5115394B1 (ja)
DE (1) DE2024824A1 (ja)
GB (1) GB1312802A (ja)
NL (1) NL147582B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62110741A (ja) * 1985-11-08 1987-05-21 Kyowa Riken:Kk 定量液体吐出装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3945030A (en) * 1973-01-15 1976-03-16 Signetics Corporation Semiconductor structure having contact openings with sloped side walls
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−ｍｏｓｆｅｔ
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
US4571513A (en) * 1982-06-21 1986-02-18 Eaton Corporation Lateral bidirectional dual notch shielded FET
US4574207A (en) * 1982-06-21 1986-03-04 Eaton Corporation Lateral bidirectional dual notch FET with non-planar main electrodes
US4571512A (en) * 1982-06-21 1986-02-18 Eaton Corporation Lateral bidirectional shielded notch FET
GB2257830B (en) * 1991-07-12 1995-04-05 Matsushita Electric Works Ltd Low output-capacity, double-diffused field effect transistor
US5536958A (en) * 1995-05-02 1996-07-16 Motorola, Inc. Semiconductor device having high voltage protection capability
US5763918A (en) * 1996-10-22 1998-06-09 International Business Machines Corp. ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up
JP3342412B2 (ja) 1997-08-08 2002-11-11 三洋電機株式会社 半導体装置およびその製造方法
US6987305B2 (en) * 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
US7564099B2 (en) * 2007-03-12 2009-07-21 International Rectifier Corporation Monolithic MOSFET and Schottky diode device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837414A (ja) * 1971-09-14 1973-06-02

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837414A (ja) * 1971-09-14 1973-06-02

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62110741A (ja) * 1985-11-08 1987-05-21 Kyowa Riken:Kk 定量液体吐出装置

Also Published As

Publication number Publication date
NL147582B (nl) 1975-10-15
GB1312802A (en) 1973-04-11
US3798514A (en) 1974-03-19
NL7007504A (ja) 1971-05-24
DE2024824A1 (de) 1971-05-27

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