JP2003045874A - 金属配線およびその作製方法、並びに金属配線基板およびその作製方法 - Google Patents

金属配線およびその作製方法、並びに金属配線基板およびその作製方法

Info

Publication number
JP2003045874A
JP2003045874A JP2001227047A JP2001227047A JP2003045874A JP 2003045874 A JP2003045874 A JP 2003045874A JP 2001227047 A JP2001227047 A JP 2001227047A JP 2001227047 A JP2001227047 A JP 2001227047A JP 2003045874 A JP2003045874 A JP 2003045874A
Authority
JP
Japan
Prior art keywords
film
metal wiring
conductive film
metal
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001227047A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003045874A5 (enExample
Inventor
Koji Ono
幸治 小野
Hideomi Suzawa
英臣 須沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001227047A priority Critical patent/JP2003045874A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to US10/205,976 priority patent/US20030030144A1/en
Publication of JP2003045874A publication Critical patent/JP2003045874A/ja
Priority to US11/105,917 priority patent/US7482274B2/en
Publication of JP2003045874A5 publication Critical patent/JP2003045874A5/ja
Priority to US12/357,533 priority patent/US8173478B2/en
Priority to US13/465,398 priority patent/US8791513B2/en
Priority to US14/444,276 priority patent/US9153352B2/en
Priority to US14/873,863 priority patent/US9917107B2/en
Priority to US15/916,860 priority patent/US10854636B2/en
Priority to US17/106,860 priority patent/US20210082967A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0006—Apparatus or processes specially adapted for manufacturing conductors or cables for reducing the size of conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0036—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001227047A 2001-07-27 2001-07-27 金属配線およびその作製方法、並びに金属配線基板およびその作製方法 Withdrawn JP2003045874A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2001227047A JP2003045874A (ja) 2001-07-27 2001-07-27 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
US10/205,976 US20030030144A1 (en) 2001-07-27 2002-07-26 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US11/105,917 US7482274B2 (en) 2001-07-27 2005-04-14 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US12/357,533 US8173478B2 (en) 2001-07-27 2009-01-22 Method of manufacturing metal wiring and method of manufacturing semiconductor device
US13/465,398 US8791513B2 (en) 2001-07-27 2012-05-07 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US14/444,276 US9153352B2 (en) 2001-07-27 2014-07-28 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US14/873,863 US9917107B2 (en) 2001-07-27 2015-10-02 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US15/916,860 US10854636B2 (en) 2001-07-27 2018-03-09 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US17/106,860 US20210082967A1 (en) 2001-07-27 2020-11-30 Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001227047A JP2003045874A (ja) 2001-07-27 2001-07-27 金属配線およびその作製方法、並びに金属配線基板およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011282753A Division JP2012142571A (ja) 2011-12-26 2011-12-26 半導体装置

Publications (2)

Publication Number Publication Date
JP2003045874A true JP2003045874A (ja) 2003-02-14
JP2003045874A5 JP2003045874A5 (enExample) 2008-08-07

Family

ID=19059768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001227047A Withdrawn JP2003045874A (ja) 2001-07-27 2001-07-27 金属配線およびその作製方法、並びに金属配線基板およびその作製方法

Country Status (2)

Country Link
US (8) US20030030144A1 (enExample)
JP (1) JP2003045874A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223228A (ja) * 2004-02-09 2005-08-18 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2008040234A (ja) * 2006-08-08 2008-02-21 Mitsubishi Electric Corp 薄膜トランジスタ基板、薄膜トランジスタの製造方法、及び表示装置
JP2014197199A (ja) * 2014-05-02 2014-10-16 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
US9153352B2 (en) 2001-07-27 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

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JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100768919B1 (ko) * 2004-12-23 2007-10-19 삼성전자주식회사 전원 생성 장치
KR101506124B1 (ko) * 2009-09-04 2015-03-25 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
CN102081182B (zh) * 2009-11-30 2013-10-09 鸿富锦精密工业（深圳）有限公司 彩色滤光片及彩色滤光片的制造方法
TWI459050B (zh) * 2009-12-01 2014-11-01 Hon Hai Prec Ind Co Ltd 彩色濾光片及彩色濾光片之製造方法
JP5709505B2 (ja) * 2010-12-15 2015-04-30 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、および記憶媒体
JP6087046B2 (ja) * 2011-03-01 2017-03-01 太陽誘電株式会社 薄膜素子の転写方法及び回路基板の製造方法
KR20140122824A (ko) * 2013-04-11 2014-10-21 삼성전자주식회사 반도체 소자 및 이의 제조 방법
KR102175854B1 (ko) 2013-11-14 2020-11-09 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
WO2017052654A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Scaled interconnect via and transistor contact by adjusting scattering
CN105185816A (zh) * 2015-10-15 2015-12-23 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
WO2021035416A1 (zh) 2019-08-23 2021-03-04 京东方科技集团股份有限公司 显示装置及其制备方法
US11600234B2 (en) 2015-10-15 2023-03-07 Ordos Yuansheng Optoelectronics Co., Ltd. Display substrate and driving method thereof
WO2021035415A1 (zh) 2019-08-23 2021-03-04 京东方科技集团股份有限公司 显示装置及其制备方法
JP6828595B2 (ja) * 2017-05-29 2021-02-10 三菱電機株式会社 半導体装置の製造方法
JP2020167047A (ja) * 2019-03-29 2020-10-08 日東電工株式会社 ヒータ
TWI822833B (zh) * 2019-08-15 2023-11-21 優顯科技股份有限公司 電子探測板、光電探測模組、與電子探測方法
US11569482B2 (en) 2019-08-23 2023-01-31 Beijing Boe Technology Development Co., Ltd. Display panel and manufacturing method thereof, display device
KR102944992B1 (ko) 2019-08-23 2026-03-30 보에 테크놀로지 그룹 컴퍼니 리미티드 표시장치, 이의 제조방법 및 구동기판
EP4020447B1 (en) 2019-08-23 2024-03-27 BOE Technology Group Co., Ltd. Pixel circuit and driving method therefor, and display substrate and driving method therefor, and display device
EP4020449B1 (en) 2019-08-23 2025-06-25 BOE Technology Group Co., Ltd. Display device and manufacturing method thereof
US12266303B2 (en) 2019-08-23 2025-04-01 Boe Technology Group Co., Ltd. Display device and manufacturing method thereof
US11404451B2 (en) 2019-08-27 2022-08-02 Boe Technology Group Co., Ltd. Electronic device substrate, manufacturing method thereof, and electronic device
CN111834465B (zh) * 2019-12-09 2024-08-02 云谷（固安）科技有限公司 阵列基板、显示面板及显示装置

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