JP2002231628A - 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 - Google Patents

半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置

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Publication number
JP2002231628A
JP2002231628A JP2001024999A JP2001024999A JP2002231628A JP 2002231628 A JP2002231628 A JP 2002231628A JP 2001024999 A JP2001024999 A JP 2001024999A JP 2001024999 A JP2001024999 A JP 2001024999A JP 2002231628 A JP2002231628 A JP 2002231628A
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Japan
Prior art keywords
film
thin film
semiconductor thin
silicon
polycrystalline
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Pending
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JP2001024999A
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English (en)
Japanese (ja)
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JP2002231628A5 (https=
Inventor
Hideo Yamanaka
英雄 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001024999A priority Critical patent/JP2002231628A/ja
Priority to US10/240,439 priority patent/US20030148565A1/en
Priority to TW091101650A priority patent/TW552707B/zh
Priority to PCT/JP2002/000799 priority patent/WO2002061816A1/ja
Publication of JP2002231628A publication Critical patent/JP2002231628A/ja
Publication of JP2002231628A5 publication Critical patent/JP2002231628A5/ja
Pending legal-status Critical Current

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    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Laser Beam Processing (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Photovoltaic Devices (AREA)
JP2001024999A 2001-02-01 2001-02-01 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 Pending JP2002231628A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001024999A JP2002231628A (ja) 2001-02-01 2001-02-01 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
US10/240,439 US20030148565A1 (en) 2001-02-01 2002-01-31 Method for forming thin semiconductor film, method for fabricating semiconductor device, system for executing these methods and electrooptic device
TW091101650A TW552707B (en) 2001-02-01 2002-01-31 Method for forming thin semiconductor film, method for fabricating semiconductor device, system for executing these methods and electro optic device
PCT/JP2002/000799 WO2002061816A1 (fr) 2001-02-01 2002-01-31 Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001024999A JP2002231628A (ja) 2001-02-01 2001-02-01 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置

Publications (2)

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JP2002231628A true JP2002231628A (ja) 2002-08-16
JP2002231628A5 JP2002231628A5 (https=) 2008-02-21

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US (1) US20030148565A1 (https=)
JP (1) JP2002231628A (https=)
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Cited By (21)

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JP2004343091A (ja) * 2003-04-21 2004-12-02 Semiconductor Energy Lab Co Ltd ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法
WO2005031781A1 (ja) * 2003-09-30 2005-04-07 Sumitomo Electric Industries, Ltd. ダイヤモンド電子放出素子の製造方法ならびに電子放出素子
JP2007253156A (ja) * 2004-05-26 2007-10-04 Hokkaido Univ レーザ加工方法および装置
CN100365760C (zh) * 2002-12-18 2008-01-30 株式会社半导体能源研究所 半导体器件的制作方法，半导体器件以及电子产品
JP2008041716A (ja) * 2006-08-01 2008-02-21 Ulvac Japan Ltd 磁気抵抗素子、磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置
JP2009031602A (ja) * 2007-07-27 2009-02-12 Semiconductor Energy Lab Co Ltd 表示装置の生産システム
WO2009057669A1 (en) * 2007-11-01 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
JP2009152569A (ja) * 2007-11-30 2009-07-09 Semiconductor Energy Lab Co Ltd 光電変換装置の製造方法
JP2009283754A (ja) * 2008-05-23 2009-12-03 Denso Corp 半導体装置の製造方法
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
JP2010056543A (ja) * 2008-08-01 2010-03-11 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2010111568A (ja) * 2008-09-29 2010-05-20 Corning Inc ガラスシートのレーザー分割方法
US7746528B2 (en) 2003-04-21 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
JP2011502948A (ja) * 2007-11-20 2011-01-27 コーニング インコーポレイテッド ガラスシートの高速／低残留応力レーザ罫書き
JP2011504661A (ja) * 2007-11-21 2011-02-10 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エピタキシャルに配向された厚膜を調製するための調製システムおよび方法
US8570456B2 (en) 2005-08-12 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device equipped with the semiconductor device
JP2016189456A (ja) * 2015-03-27 2016-11-04 エーピー システムズ インコーポレイテッド 半導体素子の製造装置及びこれを用いた半導体素子の製造方法
WO2023276182A1 (ja) * 2021-06-28 2023-01-05 Ｊｓｗアクティナシステム株式会社 熱処理方法、熱処理装置、及び半導体装置の製造方法
US11680311B2 (en) 2018-06-15 2023-06-20 Lg Chem, Ltd. Method for producing amorphous thin film

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US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
KR100854834B1 (ko) 2000-10-10 2008-08-27 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 얇은 금속층을 가공하는 방법 및 장치
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7135389B2 (en) * 2001-12-20 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam
TWI331803B (en) 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
AU2003272222A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US20040084679A1 (en) * 2002-10-30 2004-05-06 Sharp Kabushiki Kaisha Semiconductor devices and methods of manufacture thereof
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
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