WO2002061816A1 - Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique - Google Patents

Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique Download PDF

Info

Publication number
WO2002061816A1
WO2002061816A1 PCT/JP2002/000799 JP0200799W WO02061816A1 WO 2002061816 A1 WO2002061816 A1 WO 2002061816A1 JP 0200799 W JP0200799 W JP 0200799W WO 02061816 A1 WO02061816 A1 WO 02061816A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
semiconductor thin
polycrystalline
executing
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/000799
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Hideo Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of WO2002061816A1 publication Critical patent/WO2002061816A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Laser Beam Processing (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2002/000799 2001-02-01 2002-01-31 Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique Ceased WO2002061816A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001024999A JP2002231628A (ja) 2001-02-01 2001-02-01 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP2001-24999 2001-02-01

Publications (1)

Publication Number Publication Date
WO2002061816A1 true WO2002061816A1 (fr) 2002-08-08

Family

ID=18890060

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000799 Ceased WO2002061816A1 (fr) 2001-02-01 2002-01-31 Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique

Country Status (4)

Country Link
US (1) US20030148565A1 (https=)
JP (1) JP2002231628A (https=)
TW (1) TW552707B (https=)
WO (1) WO2002061816A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1468774A1 (en) * 2003-02-28 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
CN100444333C (zh) * 2002-10-07 2008-12-17 株式会社半导体能源研究所 照射激光的方法、激光照射系统和半导体器件的制造方法
US9466402B2 (en) 2003-09-16 2016-10-11 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
CN110133850A (zh) * 2018-02-02 2019-08-16 林清富 抬头显示器、发光薄膜与其制法

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
KR100854834B1 (ko) 2000-10-10 2008-08-27 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 얇은 금속층을 가공하는 방법 및 장치
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7135389B2 (en) * 2001-12-20 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam
TWI331803B (en) 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
AU2003272222A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US20040084679A1 (en) * 2002-10-30 2004-05-06 Sharp Kabushiki Kaisha Semiconductor devices and methods of manufacture thereof
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
US7453129B2 (en) * 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7972663B2 (en) * 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
KR101191837B1 (ko) 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
US7063984B2 (en) * 2003-03-13 2006-06-20 Unity Semiconductor Corporation Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US6838396B2 (en) * 2003-03-28 2005-01-04 International Business Machines Corporation Bilayer ultra-thin gate dielectric and process for semiconductor metal contamination reduction
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4515136B2 (ja) * 2003-04-21 2010-07-28 株式会社半導体エネルギー研究所 レーザビーム照射装置、薄膜トランジスタの作製方法
US7397592B2 (en) 2003-04-21 2008-07-08 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing a thin film transistor
US7208395B2 (en) * 2003-06-26 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
US7323812B2 (en) 2003-09-30 2008-01-29 Sumitomo Electric Industries, Ltd. Process for producing diamond electron emission element and electron emission element
KR100558284B1 (ko) * 2003-12-24 2006-03-10 한국전자통신연구원 폴리실리콘층의 결정화/활성화 방법 및 이를 이용한폴리실리콘 박막트랜지스터 제조방법
US20050238816A1 (en) * 2004-04-23 2005-10-27 Li Hou Method and apparatus of depositing low temperature inorganic films on plastic substrates
JP4631044B2 (ja) * 2004-05-26 2011-02-16 国立大学法人北海道大学 レーザ加工方法および装置
KR101090252B1 (ko) * 2004-09-24 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US7202124B2 (en) * 2004-10-01 2007-04-10 Massachusetts Institute Of Technology Strained gettering layers for semiconductor processes
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
TWI311213B (en) * 2004-12-24 2009-06-21 Au Optronics Corp Crystallizing method for forming poly-si films and thin film transistors using same
JP2006261611A (ja) * 2005-03-18 2006-09-28 Fuji Photo Film Co Ltd 有機エレクトロルミネッセント素子及び表示装置
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
KR100697693B1 (ko) * 2005-06-24 2007-03-20 삼성전자주식회사 피모스 트랜지스터와 그 제조 방법 및 이를 갖는 스택형반도체 장치 및 그 제조 방법
TWI424408B (zh) 2005-08-12 2014-01-21 半導體能源研究所股份有限公司 半導體裝置，和安裝有該半導體裝置的顯示裝置和電子裝置
EP1777690B1 (en) * 2005-10-18 2012-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2007067541A2 (en) 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
KR101371265B1 (ko) * 2005-12-16 2014-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치, 레이저 조사 방법, 및 반도체 장치 제조방법
WO2007125977A1 (en) * 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
US7848835B2 (en) * 2006-06-02 2010-12-07 Cymer, Inc. High power laser flat panel workpiece treatment system controller
JP2008041716A (ja) * 2006-08-01 2008-02-21 Ulvac Japan Ltd 磁気抵抗素子、磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置
JP5307992B2 (ja) * 2007-07-27 2013-10-02 株式会社半導体エネルギー研究所 表示装置の生産方法
US8441018B2 (en) 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
TWI377620B (en) * 2007-09-26 2012-11-21 Chunghwa Picture Tubes Ltd Fabricating method for a polysilicon layer
CN101842910B (zh) 2007-11-01 2013-03-27 株式会社半导体能源研究所 用于制造光电转换器件的方法
US8011207B2 (en) * 2007-11-20 2011-09-06 Corning Incorporated Laser scoring of glass sheets at high speeds and with low residual stress
KR20100105606A (ko) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP5460975B2 (ja) * 2008-05-23 2014-04-02 株式会社デンソー 半導体装置の製造方法
US7943414B2 (en) 2008-08-01 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US8051679B2 (en) * 2008-09-29 2011-11-08 Corning Incorporated Laser separation of glass sheets
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
US20110312103A1 (en) * 2009-01-30 2011-12-22 National Institute Of Advanced Industrial Science And Technology Sample detection sensor and sample detection method
US8357592B2 (en) * 2009-06-02 2013-01-22 Sumco Corporation Method and apparatus for manufacturing semiconductor substrate dedicated to semiconductor device, and method and apparatus for manufacturing semiconductor device
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
CN102859676A (zh) * 2010-02-03 2013-01-02 Limo专利管理有限及两合公司 用于对太阳能电池的片状基本材料进行热处理的方法和装置
US9250178B2 (en) * 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
JP2013149937A (ja) * 2011-12-22 2013-08-01 Panasonic Corp 多結晶型シリコン太陽電池パネルおよびその製造方法
US9214393B2 (en) 2012-04-02 2015-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Surface tension modification using silane with hydrophobic functional group for thin film deposition
CN103227090B (zh) * 2013-02-04 2016-04-06 深圳市劲拓自动化设备股份有限公司 一种线性等离子体源
CN103165422A (zh) * 2013-03-08 2013-06-19 上海和辉光电有限公司 以高能辐射源形成多晶硅的方法
US20140272198A1 (en) * 2013-03-15 2014-09-18 Stuart Bowden Systems, methods, and media for creating metallization for solar cells
US20140329027A1 (en) * 2013-05-02 2014-11-06 Applied Materials, Inc. Low temperature flowable curing for stress accommodation
CN104037269A (zh) * 2014-06-10 2014-09-10 上海大学 一种基于激光诱导晶化的非晶硅薄膜太阳能电池器件的制备方法
DE112014005277T5 (de) * 2014-06-12 2016-10-06 Fuji Electric Co., Ltd. Vorrichtung zum Einbringen von Verunreinigungen, Verfahren zum Einbringen von Verunreinigungen und Verfahren zur Herstellung eines Halbleiterelements
JP6393632B2 (ja) * 2015-02-19 2018-09-19 東京エレクトロン株式会社 Ｉｖ族半導体の結晶化方法および成膜装置
KR101818721B1 (ko) * 2015-03-27 2018-02-21 에이피시스템 주식회사 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조 방법
US9773921B2 (en) * 2015-10-30 2017-09-26 Applied Materials, Inc. Combo amorphous and LTPS transistors
KR102041208B1 (ko) * 2015-11-12 2019-11-06 쿄세라 코포레이션 히터
DE102017109812A1 (de) 2016-05-13 2017-11-16 Osram Opto Semiconductors Gmbh Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips
DE102017109809B4 (de) * 2016-05-13 2024-01-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterchips
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
DE102017012389B4 (de) 2016-05-13 2024-12-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
US11004954B2 (en) * 2016-09-30 2021-05-11 Intel Corporation Epitaxial buffer to reduce sub-channel leakage in MOS transistors
CN108269732B (zh) * 2017-01-03 2020-08-11 联华电子股份有限公司 形成非晶硅多层结构的方法
CN107393830A (zh) * 2017-07-21 2017-11-24 京东方科技集团股份有限公司 薄膜晶体管的制备方法
KR20190035036A (ko) * 2017-09-25 2019-04-03 삼성전자주식회사 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법
JP2019176076A (ja) * 2018-03-29 2019-10-10 豊田合成株式会社 発光装置
KR102391800B1 (ko) 2018-06-15 2022-04-29 주식회사 엘지화학 비정질 박막의 제조방법
TWI783583B (zh) 2020-07-21 2022-11-11 美商應用材料股份有限公司 用於非晶矽中減少氫併入的離子佈植
CN112269277B (zh) * 2020-10-09 2024-03-22 厦门兴华鼎自动化技术有限公司 一种基于应力硅的电光调制器及其制备方法
JP7785771B2 (ja) * 2021-06-28 2025-12-15 Ｊｓｗアクティナシステム株式会社 熱処理方法、熱処理装置、及び半導体装置の製造方法
CN114784148B (zh) * 2022-06-15 2022-09-23 浙江晶科能源有限公司 太阳能电池的制备方法及太阳能电池、光伏组件
CN117558783A (zh) * 2023-07-14 2024-02-13 泰州隆基乐叶光伏科技有限公司 晶硅膜层及其制备方法、太阳能电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP2000077333A (ja) * 1998-09-03 2000-03-14 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法およびレーザアニール装置
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2001015764A (ja) * 1999-04-30 2001-01-19 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JPH097945A (ja) * 1995-06-23 1997-01-10 Sharp Corp 結晶性半導体膜の形成方法
JP3977455B2 (ja) * 1995-11-29 2007-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3892150B2 (ja) * 1998-07-13 2007-03-14 シャープ株式会社 多結晶薄膜の形成方法及び形成装置
JP2000182956A (ja) * 1998-12-15 2000-06-30 Sony Corp 半導体薄膜の結晶化方法及びレーザ結晶化装置
JP2000231122A (ja) * 1999-02-12 2000-08-22 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP2000077333A (ja) * 1998-09-03 2000-03-14 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法およびレーザアニール装置
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2001015764A (ja) * 1999-04-30 2001-01-19 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444333C (zh) * 2002-10-07 2008-12-17 株式会社半导体能源研究所 照射激光的方法、激光照射系统和半导体器件的制造方法
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
EP1468774A1 (en) * 2003-02-28 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US9466402B2 (en) 2003-09-16 2016-10-11 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
CN110133850A (zh) * 2018-02-02 2019-08-16 林清富 抬头显示器、发光薄膜与其制法

Also Published As

Publication number Publication date
US20030148565A1 (en) 2003-08-07
JP2002231628A (ja) 2002-08-16
TW552707B (en) 2003-09-11

Similar Documents

Publication Publication Date Title
WO2002061816A1 (fr) Procede de fabrication de film semiconducteur mince, procede de fabrication de dispositif a semi-conducteur, systeme d'execution de ces procedes et dispositif electro-optique
Voutsas A new era of crystallization: advances in polysilicon crystallization and crystal engineering
WO2005029550A3 (en) Method and system for producing crystalline thin films with a uniform crystalline orientation
JP3204986B2 (ja) 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス
US6555449B1 (en) Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
SG112888A1 (en) Method of producing crystalline semiconductor material and method of fabricating semiconductor device
MY131900A (en) Method of manufacturing a semiconductor device
GB2396962B (en) Mask for sequential lateral solidification and and crystallization method using thereof
EP0663688A3 (en) Semiconductor substrate and method of its manufacture.
JPS62104117A (ja) 半導体薄膜の製造方法
JPH10223533A5 (https=)
ATE418630T1 (de) Verfahren zur herstellung von aluminiumnitrid- volumeneinkristallen
TWI267145B (en) Manufacturing method for a semiconductor device
TW200512844A (en) Method of fabricating crystalline silicon and switching device using crystalline silicon
TWI280552B (en) Method for forming polycrystalline silicon film
JP2001274088A (ja) 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス
EP1143502A4 (en) METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
TW200514140A (en) Method of controlling polysilicon crystallization
TW200519503A (en) Crystallization apparatus, crystallization method, device and phase modulation element
JPH03280418A (ja) 半導体膜の製造方法
TW200518196A (en) Method for crystallizing amorphous silicon film
JP2004063478A (ja) 薄膜トランジスタ及びその製造方法
JPS60143624A (ja) 半導体装置の製造方法
US20080123200A1 (en) Method and device for forming poly-silicon film
TWI234235B (en) Method for fabrication of monocrystalline silicon thin film transistor on glass substrate

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CA US

WWE Wipo information: entry into national phase

Ref document number: 10240439

Country of ref document: US