WO2023276182A1 - 熱処理方法、熱処理装置、及び半導体装置の製造方法 - Google Patents
熱処理方法、熱処理装置、及び半導体装置の製造方法 Download PDFInfo
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- WO2023276182A1 WO2023276182A1 PCT/JP2021/042254 JP2021042254W WO2023276182A1 WO 2023276182 A1 WO2023276182 A1 WO 2023276182A1 JP 2021042254 W JP2021042254 W JP 2021042254W WO 2023276182 A1 WO2023276182 A1 WO 2023276182A1
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 35
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- 230000008859 change Effects 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims description 10
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- 239000010408 film Substances 0.000 description 59
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Definitions
- the present disclosure relates to a heat treatment method, a heat treatment apparatus, and a semiconductor device manufacturing method.
- Patent Document 1 discloses an excimer laser annealing apparatus for forming a polycrystalline silicon thin film.
- a projection lens converges laser light onto a substrate so that the laser light forms a linear irradiation area.
- the amorphous silicon film on the glass substrate is crystallized into a polysilicon film.
- a pulsed laser light source is used to heat-treat only the surface layer of a semiconductor thin film.
- the pulse laser light has a higher pulse peak value per pulse than the CW laser light.
- An amorphous silicon layer on a glass substrate is crystallized by irradiating short-pulse laser light with a pulse width of several nanoseconds.
- pulsed laser light only the surface of the silicon film can be heated. Therefore, it is possible to prevent the glass substrate from exceeding its heat-resistant temperature. Furthermore, it is possible to prevent damage to a polyimide film, a Cu film, or the like, which is an underlying film of the silicon film.
- a high-power pulsed laser light source is expensive, it is difficult to reduce the component cost of the device.
- annealing in a heat treatment furnace or lamp annealing requires a long heating time. Therefore, it becomes impossible to heat the silicon film above the heat-resistant temperature of the glass substrate.
- a base film such as a polyimide film or a Cu film may be damaged.
- the semiconductor laser is inexpensive, it is a continuous wave (CW) laser. If the CW laser light is pulsed by the modulator, the output will be lowered. Therefore, many light sources are required, making cost reduction difficult. In addition, if the substrate is irradiated with the CW laser light without being modulated, the heating time becomes long. Therefore, the base film of the substrate may be damaged.
- CW continuous wave
- the heat treatment method for a semiconductor device includes (A) the step of generating a continuous wave laser beam; (C) moving one of the optical system and the driving stage in a second direction that intersects the first direction in plan view; and (D) moving the other of the front optical system or the drive stage in a third direction that intersects the second direction in plan view. and moving the irradiation position of the laser light along.
- a heat treatment apparatus for a semiconductor device includes a laser light source that generates continuous wave laser light and an optical scanner that scans the laser light along a first direction.
- an optical system driving unit for moving the optical system so that the irradiation position of the laser beam on the substrate and the guide optical system is changed; and a driving stage for holding the substrate, wherein the irradiation position of the laser beam is changed.
- a drive stage for moving, wherein the irradiation position of the laser light is changed along a second direction intersecting with the first direction in plan view by driving either the optical system drive unit or the drive stage.
- the irradiation position of the laser beam is changed along the third direction intersecting the second direction in plan view by driving the other of the optical system driving unit and the driving stage.
- the method for manufacturing a semiconductor device includes (SA) the step of generating a continuous wave laser beam; (SB) an optical scanner provided in an optical system; (SC) scanning the irradiation position of light along a first direction; and (SC) moving one of the optical system and the driving stage in a second direction that intersects with the first direction in plan view. and (SD) moving the other of the optical system or the drive stage to a third direction intersecting the second direction in plan view. and moving the irradiation position of the laser light on the substrate along a direction.
- FIG. 1 is a schematic diagram schematically showing a heat treatment apparatus according to an embodiment
- FIG. 1 is a cross-sectional view schematically showing a heat treatment apparatus according to an embodiment
- FIG. It is a figure which shows the change of the irradiation position in a board
- FIG. 4 is an SEM image showing a crystallized polysilicon film
- FIG. It is a figure which shows the EBSD image which analyzed the crystal
- FIG. 4 is an SEM image showing a crystallized polysilicon film
- FIG. 1 is a cross-sectional view showing a simplified configuration of an organic EL display;
- the heat treatment method and heat treatment apparatus for a semiconductor device perform heat treatment by, for example, irradiating a substrate with a laser.
- the heat treatment apparatus is a laser annealing apparatus for forming a low temperature poly-silicon (LTPS) film.
- LTPS low temperature poly-silicon
- the amorphous silicon film is heated by the irradiation of the laser light to form the polysilicon film.
- the heat treatment apparatus is not limited to the laser annealing apparatus.
- it can also be applied to a heat treatment apparatus that activates a semiconductor film by irradiating it with laser light.
- a heat treatment apparatus, a heat treatment method, and a manufacturing method according to the present embodiment will be described below with reference to the drawings.
- FIG. 1 is a schematic diagram schematically showing the configuration of a heat treatment apparatus 1.
- FIG. 2 is a side view schematically showing the configuration of the heat treatment apparatus 1.
- FIG. 1 is a schematic diagram schematically showing the configuration of a heat treatment apparatus 1.
- FIG. 2 is a side view schematically showing the configuration of the heat treatment apparatus 1.
- FIG. 1 is a schematic diagram showing the configuration on the XY plane
- FIG. 2 is a schematic diagram showing the configuration on the YZ plane.
- the heat treatment apparatus 1 includes a stage 10, a laser light source 21, an AO (acousto-optic) element 23, an optical fiber 24, an optical system 30, an optical system driving section 40, and a controller. 50 and .
- the optical system 30 includes a lens 31 , an optical scanner 32 and an f ⁇ lens 33 and propagates the laser light L ⁇ b>1 to the substrate 100 .
- a lens 31 , an optical scanner 32 and an f ⁇ lens 33 are installed in the housing of the optical system 30 .
- the optical system 30 may be provided with optical elements other than the lens 31 , the optical scanner 32 and the f ⁇ lens 33 .
- the substrate 100 irradiated with the laser light L1 is placed on the stage 10.
- the stage 10 is a drive stage that moves the substrate 100 .
- the stage 10 movably holds the substrate 100 .
- the substrate 100 is moved by driving the stage 10 while the substrate 100 is placed on the stage 10 .
- the stage 10 moves the substrate 100 along the B direction.
- the B direction is, for example, parallel to the X direction.
- the stage 10 may be a suction stage that holds the substrate 100 by suction.
- the laser light source 21 generates continuous wave (CW) laser light L1.
- the laser light source 21 is a semiconductor laser that generates CW light.
- the laser wavelength may be 500 nm or less. Also, the laser wavelength may be 460 nm or less.
- a laser diode with a laser wavelength of 450 nm, 380 nm, or 360 nm can be used as the laser light source 21 .
- the laser beam L1 is incident on the optical fiber 24 via the AO element 23 .
- the optical fiber 24 guides the laser beam L1 to the optical system 30 .
- the incident end of the optical fiber 24 faces the AO element 23 and the outgoing end faces the optical system 30 .
- the output end of optical fiber 24 is attached to optical system 30 . Therefore, the laser beam L1 is incident on the optical system 30 via the optical fiber 24 .
- the optical fiber 24 is fixed to the optical system 30 in a bent state.
- the optical system 30 is arranged above the substrate 100 .
- the AO element 23 modulates the laser beam L1.
- the AO element 23 is, for example, an AO modulator or an AO polarizer.
- the AO element 23 changes the deflection angle of the laser light L1 according to the control signal from the controller 50.
- the controller 50 can control the AO element 23 so that the laser beam L1 does not enter the optical fiber 24 .
- the controller 50 outputs a control signal to the AO element 23 according to the scanning direction and scanning position of the optical scanner 32 .
- the AO element 23 controls the deflection angle of the laser beam L1 according to the control signal from the controller 50.
- the controller 50 controls the AO element 23 to switch between irradiation and non-irradiation of the laser light L1. For example, when irradiating the substrate 100 with the laser light L1, the controller 50 controls the deflection angle of the laser light L1 so that the laser light L1 from the AO element 23 enters the optical fiber 24 . When the laser light L1 enters the optical fiber 24, the laser light L1 propagates through the optical system 30 and is guided to the substrate 100. As shown in FIG. On the other hand, when the substrate 100 is not irradiated with the laser light L1, the controller 50 controls the deflection angle of the laser light L1 so that the laser light L1 from the AO element 23 does not enter the optical fiber 24 . If the laser beam L1 deviates from the optical fiber 24, the laser beam L1 does not enter the optical system 30, and thus the substrate 100 is not irradiated with the laser beam L1.
- the AO element 23 functions as an optical element that switches between irradiation and non-irradiation of the laser light L1. That is, the controller 50 controls the AO element 23 so that irradiation and non-irradiation of the laser light L1 alternate.
- the AO element 23 changes the deflection angle according to the control signal from the controller 50.
- the optical shutter that switches between irradiation and non-irradiation of the laser light L1 is not limited to the AO element 23, and other optical elements or mechanical shutters may be used.
- the optical system driving section 40 has a motor and a driving mechanism for driving the optical system 30 .
- the optical system driving section 40 has a gantry stage that movably holds the optical system 30 .
- the optical system driving section 40 moves the optical system 30 along the direction C in FIG.
- the C direction is parallel to the Y direction.
- the optical fiber 24 is connected to the optical system 30 with sufficient bending. Movement of the optical system 30 changes the position of the output end of the optical fiber 24 . Even when the optical system 30 moves, the laser beam L1 can be made to enter the optical system 30 appropriately. In other words, even when the position of the optical system 30 is moved, the laser beam L1 propagates along the optical axis within the optical system 30 . Specifically, the optical system 30 moves while the output end of the optical fiber 24 is arranged on the optical axis of the lens 31 .
- the laser beam L1 that has entered the optical system 30 enters the lens 31, the optical scanner 32, and the f ⁇ lens 33 in this order.
- the lens 31 converges the laser beam L1 toward the optical scanner 32 .
- the optical scanner 32 reflects the laser beam L1 toward the f ⁇ lens 33 .
- the optical scanner 32 is, for example, a galvanomirror or the like, and deflects the laser beam L1.
- the irradiation position of the laser beam L1 on the substrate 100 is changed by changing the deflection angle of the laser beam L1 by the optical scanner 32 .
- the laser beam L1 is scanned in the direction of arrow A in FIG.
- the optical scanner 32 is operated by a driving motor or the like that rotates around the Y axis.
- the optical scanner 32 scans the substrate 100 with the laser light L1 along the X direction. That is, the irradiation position of the laser light L1 on the substrate 100 moves in the X direction by scanning the laser light L1 with the optical scanner 32 .
- the optical scanner 32 is not limited to a galvanomirror, and may be a polygon mirror, an acoustooptic device, or the like.
- the f ⁇ lens 33 refracts the laser beam L1 reflected by the optical scanner 32 .
- the focal plane of the laser light L 1 can be aligned with the main surface of the substrate 100 . That is, regardless of the deflection angle of the optical scanner 32, the focal position of the laser beam L1 in the Z direction is at a constant height. Thereby, the irradiation power density of the laser light L1 on the substrate 100 can be made constant.
- the spot shape of the laser light L1 irradiated onto the substrate 100 may be circular or rectangular.
- the intensity distribution of the laser light L1 in the beam cross section may be a Gaussian distribution.
- the laser light L1 may be formed into a top-flat shape (top-hat shape) by a modulator or the like.
- the spot shape of the laser beam L1 is rectangular and the intensity distribution is a top-flat distribution.
- the optical fiber 24 guides the laser beam L1 to the optical system 30 in FIG. 1, other configurations and optical elements may be used.
- the laser light source 21 may be fixed within the unit of the optical system 30 .
- the optical scanner 32 scans the laser light L1 along the X direction.
- the stage 10 moves the substrate 100 along the direction of arrow B in FIG. Therefore, the irradiation position of the laser beam L1 on the substrate 100 moves in the X direction.
- the optical system driving section 40 moves the optical system 30 along the direction of arrow C in FIG.
- the irradiation position of the laser light L1 on the substrate 100 changes in the Y direction. Therefore, it is possible to freely change the irradiation position of the laser light on the substrate 100 within the XY plane.
- FIG. 3 is an XY plan view showing changes in the irradiation position of the laser beam L1 on the substrate 100.
- the substrate 100 is circular in FIG. 3, it may be rectangular.
- the beam spot of the laser beam L1 is circular, it may be rectangular.
- the scanning direction of the optical scanner 32 is the direction of arrow A.
- arrow A is parallel to the X direction.
- the optical scanner 32 moves the irradiation position of the laser beam L1 along the +X direction.
- the direction of movement of the optical system 30 by the optical system drive unit 40 is the direction of arrow C.
- Arrow C is a direction that intersects arrow A in an XY plan view.
- arrows A and B are orthogonal directions.
- the direction of movement of the substrate 100 by the stage 10 is the direction of arrow B.
- Arrow B is in a direction that intersects arrow C in the XY plan view.
- arrow B is a direction parallel to the X direction. That is, the arrow B is a direction perpendicular to the arrow C and a direction parallel to the arrow A.
- the moving direction of the stage 10 and the scanning direction of the optical scanner 32 are opposite to each other.
- the controller 50 controls the stage 10, the optical scanner 32, the optical system driving section 40, and the AO element 23.
- the stage 10 and the optical system driving section 40 operate according to control signals from the controller 50 .
- the stage 10 moves the substrate 100 to the XY position according to the control signal.
- the optical system drive unit 40 controls the XY position of the optical system 30 with respect to the substrate 100 according to the control signal.
- the controller 50 controls the scanning speed and scanning direction of the optical scanner 32 .
- the optical scanner 32 scans the laser light L1 in response to control signals from the controller 50 .
- the controller 50 controls the AO element 23 according to the scanning direction and scanning position of the optical scanner 32 .
- the AO element 23 deflects the laser beam L1 to switch between irradiation and non-irradiation.
- the controller 50 controls the irradiation position of the laser light L ⁇ b>1 on the substrate 100 . Almost the entire surface of the substrate 100 can be irradiated with the laser light L1.
- An amorphous silicon film provided on the substrate 100 can be crystallized to form a polysilicon film.
- the controller 50 outputs a control signal synchronized with the control signal of the optical scanner 32 to the optical system 30, the stage 10, and the AO element 23. By doing so, it is possible to appropriately control the irradiation position of the laser beam L1.
- the scanning speed of the optical scanner 32 is higher than the moving speed of the optical system driving unit 40 and the moving speed of the stage 10 . Since the scanning speed of the optical scanner 32 is high, the substrate heating time (heat treatment time) can be shortened.
- the substrate heating time is the irradiation time during which an arbitrary point on the substrate 100 is continuously irradiated with laser light. That is, the irradiation time is the time during which one point on the substrate 100 is scanned from one end to the other end of the beam spot.
- the irradiation time is set to 100 ⁇ sec or less in order to prevent damage to the substrate 100 and the underlying film. That is, it is preferable to set the beam size and scanning speed in the X direction so that the irradiation time is 100 ⁇ sec or less.
- the scanning speed is 1 m/sec or more.
- the scanning speed is 6 m/sec or more. In this embodiment, the beam size is 100 ⁇ m and the scanning speed is 6 m/sec, so the irradiation time is 16.7 ⁇ sec.
- FIG. 4 is a diagram schematically showing changes in the irradiation position of the laser beam L1 on the substrate 100.
- Laser light is applied to the substrate 100 in the order of steps S1 to S8 in FIG.
- the spot shape of the laser beam L1 is rectangular.
- the optical scanner 32 scans the laser light L1 from the irradiation position shown in step S1 along the direction of arrow A shown in step S2. Thereby, a line-shaped irradiated line I11 is formed on the substrate 100 .
- one irradiated line I11 is formed. Specifically, the irradiated line I11 is formed by scanning the laser light L1 from the scanning end on the ⁇ X side to the scanning end on the +X side in the scanning range of the optical scanner 32 .
- the width (Y-direction size) of the irradiated line I11 corresponds to the spot size of the laser beam L1.
- the length (X-direction size) of the irradiated line I ⁇ b>11 corresponds to the scanning range (scanning width) of the optical scanner 32 .
- the optical system drive unit 40 moves the optical system 30 along the arrow B direction.
- the irradiated line I11 is shown as a rectangle in FIG.
- the shape of the irradiated line I11 on the substrate 100 becomes a parallelogram.
- the optical scanner 32 scans the laser beam L1 in the X direction at a constant speed.
- the substrate 100 can be uniformly irradiated with the laser light L1.
- a uniform polysilicon film can be formed.
- a plurality of irradiated lines I11 to I13 are formed as in step S3.
- the optical system 30 is moving at a constant speed while the optical scanner 32 is scanning. Therefore, the laser light L1 is irradiated in order of the irradiated line I11, the irradiated line I12, and the irradiated line I13.
- the illuminated line I12 may overlap the illuminated line I11 and the illuminated line I13 respectively.
- the size of the irradiated line I12 is the same as that of the irradiated line I11 and the irradiated line I13.
- the movement of the optical system 30 and the scanning of the optical scanner 32 are performed simultaneously.
- the optical scanner 32 scans the laser light L1 while the optical system drive unit 40 is moving the optical system 30 .
- the optical scanner 32 scans the laser beam L1 while the optical system drive unit 40 is moving the optical system 30 at a constant speed in the +Y direction.
- scanning by the optical scanner 32 and movement of the optical system 30 may be alternately performed. That is, when the optical scanner 32 completes scanning for one line, the optical system 30 may move at a predetermined feed pitch.
- an irradiated area R1 is formed as shown in step S4.
- the irradiated area R1 is a quadrangle including a plurality of lines that have been irradiated.
- the X-direction size of the irradiated area R1 corresponds to the scanning width of the optical scanner 32 .
- the size of the irradiated area R1 in the Y direction corresponds to the moving distance of the optical system 30 in the Y direction.
- the irradiated area R1 is shown as a rectangle in FIG. Strictly speaking, when the optical scanner 32 scans while the optical system 30 is moving, the irradiated area R1 becomes a parallelogram. Note that the stage 10 does not move the substrate 100 during S1 to S4. That is, the position of the stage 10 is fixed until the irradiated area R1 is formed.
- the stage 10 moves the substrate 100 along the arrow B direction.
- the stage 10 is moving the substrate 100 in the -X direction. Therefore, the irradiation position on the substrate 100 moves in the +X direction.
- the AO element 23 does not irradiate the laser beam L1 while the stage 10 is moving. That is, the controller 50 changes the deflection angle of the AO element 23 so that it does not enter the optical fiber 24 .
- the optical system drive unit 40 moves the optical system 30 to the movement end on the +Y side.
- the stage 10 moves in the -X direction by a distance corresponding to the scanning width of the optical scanner 32.
- the substrate 100 is again irradiated with the laser beam L1 as shown in step S5. That is, the controller 50 changes the deflection angle of the AO element 23 to make it enter the optical fiber 24 .
- the irradiation position in step S5 matches the irradiation position in step S1.
- the irradiation position in step S5 is shifted from the irradiation position in step S1 by a distance corresponding to the scanning width.
- step S6 the optical scanner 32 scans the laser light L1 in the +X direction. Thereby, an irradiated line I21 is formed.
- step S4 the same processing as in steps S2 to S4 is performed. That is, the substrate 100 is irradiated with the laser light L1 by scanning the optical scanner 32 and moving the optical system 30 .
- step S6 corresponds to step S2
- a new irradiated line I21 for one line is formed on the substrate 100 in step S6. That is, in step S6, an irradiated line I21 is formed in addition to the irradiated area R1 formed in step S4.
- the irradiated line I21 has the same size as the irradiated line I11.
- step S7 corresponds to step S3
- three irradiated lines I21, I22, and I23 are formed on the substrate 100 in step S7. That is, in step S7, irradiated lines I21, I22, and I23 are formed in addition to the irradiated area R1 formed in step S4.
- the irradiated lines I21, I22, and I23 have the same size.
- step S8 is performed. Since step S8 corresponds to step S4, an irradiated area R2 is formed on the substrate 100.
- the irradiated area R2 is a quadrangle including a plurality of lines that have been irradiated.
- the irradiated area R2 has the same size as the irradiated area R1. In the Y direction, the position of the irradiated area R2 matches the position of the irradiated area R1. In the X direction, the position of the irradiated area R2 is shifted from the position of the irradiated area R1.
- the substrate 100 By repeating the above process, almost the entire surface of the substrate 100 can be irradiated with the laser light L1. That is, by repeating the processes of steps S5 to S8, rectangular irradiated areas are formed in order. By sequentially moving the stage 10, the substrate 100 is irradiated with the laser light L1 from one end to the other end in the X direction.
- the moving speed of the optical system 30 by the optical system drive unit 40 is higher than the moving speed of the substrate 100 by the stage 10 .
- the moving direction of the optical system 30 is the direction intersecting with the scanning direction of the optical scanner 32 .
- the moving direction of the substrate 100 is a direction that intersects with the moving direction of the optical system 30 . Specifically, as shown in FIG. 3, the moving direction of the substrate 100 and the scanning direction of the optical scanner 32 are parallel to the X direction, and the moving direction of the optical system 30 is orthogonal to the X direction.
- the substrate 100 can be appropriately irradiated with the laser beam L1, and a uniform polysilicon film can be formed.
- the optical scanner 32 is a galvanometer mirror that reciprocates the laser beam L1 in the X direction.
- the galvanomirror alternately scans in the +X direction (hereinafter also referred to as the forward direction) and scans in the ⁇ X direction (hereinafter also referred to as the reverse direction). That is, the optical scanner 32 scans the laser light L1 so as to reciprocate in the forward direction and the reverse direction. Therefore, at both ends of the scanning range of the optical scanner 32 (hereinafter referred to as scanning ends), the drive motor decelerates the galvanomirror and then accelerates it in the opposite direction.
- the substrate 100 is irradiated with the laser beam L1 until the galvanomirror is decelerated and accelerated.
- the laser light irradiation time is longer than at the center of the scanning range.
- the controller 50 controls the AO element 23 so that the substrate 100 is not irradiated with the laser beam L1 at the scanning end where the galvanomirror accelerates or decelerates.
- the AO element 23 switches the deflection angle of the laser light L1, so that the substrate 100 is not irradiated with the laser light L1 at the scanning end. That is, the laser beam L1 is deflected so that the AO element 23 does not enter the optical fiber 24 at the timing when the galvanomirror accelerates or decelerates.
- the distribution of the irradiation time in the plane of the substrate 100 can be made uniform, so uniform crystallization can be achieved.
- adjacent irradiated lines may be scanned by the optical scanner 32 in the same direction or in the opposite direction.
- the irradiated line I11 when the irradiated line I11 is formed by scanning in the forward direction (+X direction), the irradiated line I12 may be formed by scanning in the reverse direction ( ⁇ X direction).
- the odd illuminated lines are formed in the forward scan, and the even illuminated lines are formed in the reverse scan.
- substantially the entire surface of the substrate 100 can be irradiated with the laser light L1 in a short time. Since the substrate 100 is irradiated with the laser light L1 in reciprocating scanning, the AO element 23 prevents the laser light L1 from entering the optical fiber 24 only at the scanning end.
- adjacent irradiated lines may be formed in the same scanning direction.
- the irradiated line I11 when the irradiated line I11 is formed by forward scanning, the irradiated line I12 may be formed by forward scanning. In this case, all illuminated lines are formed by scanning in the forward direction. Since the substrate 100 is irradiated with the laser light L1 in the forward scanning, the AO element 23 prevents the laser light L1 from entering the optical fiber 24 not only at the scanning end but also during the reverse scanning. While the optical scanner 32 is operating in the forward direction from one end of the scanning range to the other end, the substrate 100 is irradiated with the laser light L1.
- the AO element 23 stops the laser light L1 from being emitted. Further, the movement of the optical system 30 by the optical system driving section 40 may be stopped while the laser light L1 is not irradiated.
- the time interval between the scanning of the first line and the scanning of the second line is set as the scanning time interval.
- the scanning time interval can be made the same at the center of the scanning range and at the scanning end.
- adjacent irradiated lines may partially overlap.
- the -Y direction end of the irradiated line I11 is arranged on the -Y side of the +Y direction end of the irradiated line I12.
- the moving speed of the optical system 30 may be set so that the irradiated line I11 and the irradiated line I12 shown in FIG. 4 partially overlap.
- the overlap already crystallized during the formation of the irradiated line I11 is further overwritten during the formation of the irradiated line I12. Therefore, the characteristics of the polysilicon film can be improved.
- the laser light intensity increases at the center of the spot of the laser light L1.
- the laser beam intensity decreases with increasing distance from the spot center.
- the irradiation dose fluctuates according to the position in the Y direction within the irradiated line. Therefore, the moving speed of the optical system 30 is set so that adjacent irradiated lines partially overlap in the Y direction.
- the location away from the center of the spot in the Y direction is scanned twice with the laser beam.
- the intensity at the center of the spot of the Gaussian-distributed laser beam L1 is assumed to be 100%, the intensity may overlap up to the position where the intensity is 60%.
- the irradiated area R1 and the irradiated area R2 may overlap in the X direction.
- FIG. 5 An SEM (Scanning Electron Microscope) image of the polysilicon film formed by laser irradiation is shown in FIG.
- FIG. 5 also schematically shows the Y-direction positions of the irradiated lines corresponding to the SEM image.
- FIG. 6 is a diagram showing an EBSD (Electron Back Scatter Diffraction) image obtained by analyzing crystals of a polysilicon film. Specifically, the distribution of crystal orientation is indicated by color. In other words, the XY positions with the same crystal orientation are displayed in the same color. As shown in FIGS. 5 and 6, crystals can be formed that grow along the Y direction.
- EBSD Electron Back Scatter Diffraction
- the amount of movement of the optical system 30 corresponding to the scanning time (one scanning time) from one end to the other end of the optical scanner 32 is defined as a feed pitch p.
- FIG. 7 is an SEM photograph showing a state in which the crystallized film formed by the first shot is overwritten by the second shot. Although the crystal grows along the Y direction in the first shot, the growth direction of the crystal changes due to overwriting in the second shot.
- Device configuration example 1 The configuration of the device configuration example 1 will be described below.
- a semiconductor laser manufactured by LaserLine is used as the laser light source 21 .
- the output of the laser light source 21 is 1000 W, and the laser wavelength (representative value) is 450 nm. Note that the laser wavelength should be in the range of 400 to 500 nm.
- the diameter of the optical fiber 24 is 600 ⁇ m.
- the beam shape on the substrate 100 is a rectangle of 600 ⁇ m ⁇ 600 ⁇ m.
- the scanning speed v of the beam by the optical scanner 32 is set to 6 m/sec.
- the scanning range (scanning length) d of the optical scanner 32 is 10 mm.
- the moving speed Vopt of the optical system 30 by the optical system drive unit 40 is set to 164 mm/sec.
- a laser beam is emitted to and from the galvanometer mirror. That is, the substrate 100 is irradiated with the laser beam L1 not only when the scanning direction of the optical scanner 32 is in the forward direction but also when it is in the reverse direction.
- Device configuration example 2 The configuration of the device configuration example 2 will be described below.
- the output of the laser light source 21 is 100 W
- the laser wavelength (representative value) is 450 nm.
- the laser wavelength should be in the range of 400 to 500 nm.
- the diameter of the optical fiber 24 is set to 100 ⁇ m.
- the beam shape on the substrate 100 is a rectangle of 100 ⁇ m ⁇ 100 ⁇ m.
- the scanning speed v of the beam by the optical scanner 32 is set to 6 m/sec.
- the scanning range (scanning length) d of the optical scanner 32 is 10 mm.
- a semiconductor device having the above polysilicon film is suitable for a TFT (Thin Film Transistor) array substrate for an organic EL (ElectroLuminescence) display. That is, the polysilicon film is used as a semiconductor layer having a source region, a channel region and a drain region of the TFT.
- TFT Thin Film Transistor
- organic EL ElectroLuminescence
- FIG. 8 is a cross-sectional view showing a simplified pixel circuit of an organic EL display.
- the organic EL display 300 shown in FIG. 8 is an active matrix display device in which a TFT is arranged in each pixel PX.
- the organic EL display 300 includes a substrate 310 , a TFT layer 311 , an organic layer 312 , a color filter layer 313 and a sealing substrate 314 .
- FIG. 8 shows a top emission type organic EL display in which the sealing substrate 314 side is the viewing side. Note that the following description shows one configuration example of the organic EL display, and the present embodiment is not limited to the configuration described below.
- the semiconductor device according to this embodiment may be used in a bottom emission type organic EL display.
- the substrate 310 is a glass substrate or a metal substrate.
- a TFT layer 311 is provided on the substrate 310 .
- the TFT layer 311 has a TFT 311a arranged in each pixel PX. Further, the TFT layer 311 has wiring (not shown) and the like connected to the TFT 311a.
- the TFT 311a, wiring, and the like constitute a pixel circuit.
- An organic layer 312 is provided on the TFT layer 311 .
- the organic layer 312 has an organic EL light emitting element 312a arranged for each pixel PX. Further, the organic layer 312 is provided with partition walls 312b for separating the organic EL light emitting elements 312a between the pixels PX.
- a color filter layer 313 is provided on the organic layer 312 .
- the color filter layer 313 is provided with color filters 313a for color display. That is, each pixel PX is provided with a resin layer colored R (red), G (green), or B (blue) as a color filter 313a.
- a sealing substrate 314 is provided on the color filter layer 313 .
- the sealing substrate 314 is a transparent substrate such as a glass substrate, and is provided to prevent deterioration of the organic EL light emitting element of the organic layer 312 .
- the current flowing through the organic EL light emitting element 312a of the organic layer 312 changes depending on the display signal supplied to the pixel circuit. Therefore, by supplying a display signal corresponding to a display image to each pixel PX, the amount of light emitted from each pixel PX can be controlled. Thereby, a desired image can be displayed.
- one pixel PX is provided with one or more TFTs (for example, a switching TFT or a driving TFT).
- TFTs for example, a switching TFT or a driving TFT.
- a semiconductor layer having a source region, a channel region, and a drain region is provided in the TFT of each pixel PX.
- the polysilicon film according to this embodiment is suitable for a semiconductor layer of a TFT. That is, by using the polysilicon film manufactured by the above-described manufacturing method as the semiconductor layer of the TFT array substrate, it is possible to suppress in-plane variations in TFT characteristics. Therefore, a display device with excellent display characteristics can be manufactured with high productivity.
- FIG. 9 and 10 are process cross-sectional views showing the manufacturing process of the semiconductor device.
- a method of manufacturing a semiconductor device having an inverted staggered type TFT will be described.
- 9 and 10 show the process of forming a polysilicon film in the semiconductor manufacturing method. For other manufacturing steps, a known method can be used, so the description is omitted.
- a gate electrode 402 is formed on a glass substrate 401 .
- a gate insulating film 403 is formed on the gate electrode 402 .
- An amorphous silicon film 404 is formed on the gate insulating film 403 .
- the amorphous silicon film 404 is arranged so as to overlap the gate electrode 402 with the gate insulating film 403 interposed therebetween.
- the gate insulating film 403 and the amorphous silicon film 404 are continuously formed by CVD (Chemical Vapor Deposition).
- a polysilicon film 405 is formed as shown in FIG. That is, the amorphous silicon film 404 is crystallized by the heat treatment apparatus 1 shown in FIG. 1 and the like. As a result, a polysilicon film 405 of crystallized silicon is formed on the gate insulating film 403 .
- the polysilicon film 405 corresponds to the polysilicon film described above.
- the heat treatment apparatus irradiates an amorphous silicon film with a laser beam to form a polysilicon film. It may be one that forms a crystal silicon film.
- laser light is not limited to a semiconductor laser.
- the method according to this embodiment can also be applied to a method for crystallizing a thin film other than a silicon film. That is, the method according to the present embodiment can be applied to any heat treatment apparatus that forms a crystallized film by irradiating an amorphous film with a laser beam. According to the apparatus according to this embodiment, the crystallized film-coated substrate can be appropriately modified.
- the semiconductor film can be activated by the heat treatment apparatus 1 irradiating the semiconductor film with the laser light L1.
- FIG. 11 is an XY plan view showing changes in the irradiation position of the laser beam L1 on the substrate 100.
- FIG. 11 the moving direction (arrow B) of the stage 10 and the moving direction (arrow C) of the optical system 30 are different from those of the configuration of FIG.
- the scanning direction of the optical scanner 32 is the direction of arrow A, as in FIG.
- arrow A is parallel to the X direction.
- the optical scanner 32 moves the irradiation position of the laser beam L1 along the +X direction.
- the direction of movement of the optical system 30 by the optical system drive unit 40 is the direction of arrow C.
- Arrow C is parallel to arrow A in the XY plan view.
- the moving direction of the stage 10 and the scanning direction of the optical scanner 32 are opposite to each other. By moving the optical system 30, the irradiation position of the laser beam L1 on the substrate 100 moves in the X direction.
- the direction of movement of the substrate 100 by the stage 10 is the direction of arrow B.
- Arrow B is in a direction that intersects arrow C in the XY plan view.
- arrow B is a direction parallel to the Y direction. That is, the arrow B is a direction perpendicular to the arrow A and a direction perpendicular to the arrow C.
- the optical scanner 32 changes the irradiation position of the laser light L1 in the first direction.
- the irradiation position of the laser light L1 on the substrate 100 is relatively changed in the second direction.
- the irradiation position of the laser light L1 with respect to the substrate 100 is relatively changed in the third direction.
- the first direction and the second direction are directions that cross each other.
- the second direction and the third direction are directions that cross each other. Even in such a configuration, the same effect as described above can be obtained.
- the controller 50 may be configured with hardware such as a control circuit, or may be implemented with software such as a program executed by a processor. A part or all of the processing of the controller 50 described above may be executed by a computer program.
- the programs described above include instructions (or software code) that, when read into a computer, cause the computer to perform one or more of the functions described in the embodiments.
- the program may be stored in a non-transitory computer-readable medium or tangible storage medium.
- computer readable media or tangible storage media may include random-access memory (RAM), read-only memory (ROM), flash memory, solid-state drives (SSD) or other memory technology, CDs - ROM, digital versatile disc (DVD), Blu-ray disc or other optical disc storage, magnetic cassette, magnetic tape, magnetic disc storage or other magnetic storage device.
- the program may be transmitted on a transitory computer-readable medium or communication medium.
- transitory computer readable media or communication media include electrical, optical, acoustic, or other forms of propagated signals.
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Abstract
Description
(照射時間)=(ビームサイズ)/(走査速度) ・・・(1)
以下、装置構成例1の構成について説明する。装置構成例1では、レーザ光源21として、LaserLine社製の半導体レーザを用いている。レーザ光源21の出力は1000Wで、レーザ波長(代表値)は450nmとしている。なお、レーザ波長は400~500nmの範囲にあればよい。光ファイバ24の直径は600μmとしている。
Vopt=a/{d/v+(2*t)}・・・(2)
以下、装置構成例2の構成について説明する。装置構成例2では、レーザ光源21の出力は100Wで、レーザ波長(代表値)は450nmとしている。なお、レーザ波長は400~500nmの範囲にあればよい。光ファイバ24の直径は100μmとしている。
上記のポリシリコン膜を有する半導体装置は、有機EL(ElectroLuminescence)ディスプレイ用のTFT(Thin Film transistor)アレイ基板に好適である。すなわち、ポリシリコン膜は、TFTのソース領域、チャネル領域、ドレイン領域を有する半導体層として用いられる。
本実施の形態にかかる熱処理装置を用いた半導体装置の製造方法は、TFTアレイ基板の製造に好適である。TFTを有する半導体装置の製造方法について、図9、図10を用いて説明する。図9、図10は半導体装置の製造工程を示す工程断面図である。以下の説明では、逆スタガード(inverted staggered)型のTFTを有する半導体装置の製造方法について説明する。図9,図10では、半導体製造方法におけるポリシリコン膜の形成工程を示している。なお、その他の製造工程については、公知の手法を用いることができるため、説明を省略する。
変形例にかかる熱処理方法について、図11を用いて説明する。図11は、基板100上におけるレーザ光L1の照射位置の変化を示すXY平面図である。変形例では、図3の構成と比較して、ステージ10の移動方向(矢印B)と光学系30の移動方向(矢印C)が異なっている。
10 ステージ
21 レーザ光源
23 AO素子
24 光ファイバ
30 光学系
31 レンズ
32 光スキャナ
33 fθレンズ
40 光学系駆動部
50 コントローラ
100 基板
300 有機ELディスプレイ
310 基板
311 TFT層
311a TFT
312 有機層
312a 有機EL発光素子
312b 隔壁
313 カラーフィルタ層
313a カラーフィルタ(CF)
314 封止基板
401 ガラス基板
402 ゲート電極
403 ゲート絶縁膜
404 アモルファスシリコン膜
405 ポリシリコン膜
PX 画素
Claims (26)
- (A)連続発振のレーザ光を発生するステップと、
(B)光学系に設けられた光スキャナが、駆動ステージに保持された基板における前記レーザ光の照射位置を第1の方向に沿って走査するステップと、
(C)前記光学系又は前記駆動ステージの一方を移動することで、平面視において前記第1の方向と交差する第2の方向に沿って前記レーザ光の前記照射位置を移動させるステップと、
(D)前記光学系又は前記駆動ステージの他方を移動することで、平面視において前記第2の方向と交差する第3の方向に沿って前記レーザ光の前記照射位置を移動させるステップと、を備えた半導体装置の熱処理方法。 - 前記(C)のステップでは、前記光学系を移動することで、前記レーザ光の照射位置が前記第2の方向に沿って移動しており、
前記(D)のステップでは、前記駆動ステージを移動することで、前記レーザ光の照射位置が前記第3の方向に沿って移動している請求項1に記載の半導体装置の熱処理方法。 - 前記(C)のステップでは、前記駆動ステージを移動することで、前記レーザ光の照射位置が前記第2の方向に沿って移動しており、
前記(D)のステップでは、前記光学系を移動することで、前記レーザ光の照射位置が前記第3の方向に沿って移動している請求項1に記載の半導体装置の熱処理方法。 - 前記光スキャナの走査速度が、前記光学系の移動速度より高速になっている請求項1~3のいずれか1項に記載の半導体装置の熱処理方法。
- 前記光スキャナの走査中に、前記光学系が移動している請求項1~4のいずれか1項に記載の半導体装置の熱処理方法。
- 平面視において前記第1の方向と前記第3の方向が平行な方向であり、
前記光学系が前記基板の一端から他端まで相対的に移動した後、前記駆動ステージが前記照射位置を第3の方向に移動させ、
前記駆動ステージの駆動が終了した後、前記光スキャナが前記レーザ光を走査することで、前記基板にレーザ光が再度照射される、請求項1~5のいずれか1項に記載の半導体装置の熱処理方法。 - 前記光スキャナの走査端において、前記レーザ光が前記基板に照射されない請求項1~6のいずれか1項に記載の半導体装置の熱処理方法。
- 前記光スキャナが走査範囲の一端から他端に向かう順方向と前記他端から前記一端に向かう逆方向とに往復動作し、
前記光スキャナが前記順方向に動作している間において、前記レーザ光が前記基板に照射され、
前記光スキャナが前記逆方向に動作している間において、前記レーザ光が遮光されている請求項1~7のいずれか1項に記載の半導体装置の熱処理方法。 - 連続発振のレーザ光を発生するレーザ光源と、
前記レーザ光を第1の方向に沿って走査する光スキャナを有し、前記レーザ光を基板に導く光学系と、
前記基板に対する前記レーザ光の照射位置が変化するように、前記光学系を移動させる光学系駆動部と、
前記基板を保持する駆動ステージであって、前記レーザ光の前記照射位置を移動させる駆動ステージと、を備え、
前記光学系駆動部又は前記駆動ステージの一方の駆動により、前記平面視において第1の方向と交差する第2の方向に沿って前記レーザ光の照射位置が変化し、
前記光学系駆動部又は前記駆動ステージの他方の駆動により、前記平面視において第2の方向と交差する第3の方向に沿って前記レーザ光の照射位置が変化する半導体装置の熱処理装置。 - 前記光学系駆動部の駆動により、前記レーザ光の照射位置が前記第2の方向に沿って移動し、
前記駆動ステージの駆動により、前記レーザ光の照射位置が前記第3の方向に沿って移動している請求項9に記載の半導体装置の熱処理装置。 - 前記光学系駆動部の駆動により、前記レーザ光の照射位置が前記第3の方向に沿って移動し、
前記駆動ステージの駆動により、前記レーザ光の照射位置が前記第2の方向に沿って移動している請求項9に記載の半導体装置の熱処理装置。 - 前記光スキャナの走査速度が、前記光学系の移動速度より高速になっている請求項9~11のいずれか1項に記載の半導体装置の熱処理装置。
- 前記光スキャナの走査中に、前記光学系が移動している請求項9~12のいずれか1項に記載の半導体装置の熱処理装置。
- 平面視において前記第1の方向と前記第3の方向が平行な方向であり、
前記光学系が前記基板の一端から他端まで相対的に移動した後、前記駆動ステージが前記照射位置を第3の方向に移動させ、
前記駆動ステージの駆動が終了した後、前記光スキャナが前記レーザ光を走査することで、前記基板にレーザ光が再度照射される、請求項9~13のいずれか1項に記載の半導体装置の熱処理装置。 - 前記光スキャナの走査端において、前記レーザ光が前記基板に照射されない請求項9~14のいずれか1項に記載の半導体装置の熱処理装置。
- 前記光スキャナが走査範囲の一端から他端に向かう順方向と前記他端から前記一端に向かう逆方向とに往復動作し、
前記光スキャナが前記順方向に動作している間において、前記レーザ光が前記基板に照射され、
前記光スキャナが前記逆方向に動作している間において、前記レーザ光が遮光されている請求項9~15のいずれか1項に記載の半導体装置の熱処理装置。 - (SA)連続発振のレーザ光を発生するステップと、
(SB)光学系に設けられた光スキャナが、駆動ステージに保持された基板における前記レーザ光の照射位置を第1の方向に沿って走査するステップと、
(SC)前記光学系又は前記駆動ステージの一方を移動することで、平面視において前記第1の方向と交差する第2の方向に沿って前記基板における前記レーザ光の照射位置を移動させるステップと、
(SD)前記光学系又は前記駆動ステージの他方を移動することで、平面視において前記第2の方向と交差する第3の方向に沿って前記基板における前記レーザ光の照射位置を移動させるステップと、を備えた半導体装置の製造方法。 - 前記(SC)のステップでは、前記光学系を移動することで、前記レーザ光の照射位置が前記第2の方向に沿って移動しており、
前記(SD)のステップでは、前記駆動ステージを移動することで、前記レーザ光の照射位置が前記第3の方向に沿って移動している請求項17に記載の半導体装置の製造方法。 - 前記(SC)のステップでは、前記駆動ステージを移動することで、前記レーザ光の照射位置を前記第2の方向に沿って移動しており、
前記(SD)のステップでは、前記光学系を移動することで、前記レーザ光の照射位置を前記第3の方向に沿って移動している請求項17に記載の半導体装置の製造方法。 - 前記光スキャナの走査速度が、前記光学系の移動速度より大きくなっている請求項17~19のいずれか1項に記載の半導体装置の製造方法。
- 前記光スキャナの走査中に、前記光学系が移動している請求項17~20のいずれか1項に記載の半導体装置の製造方法。
- 平面視において前記第1の方向と前記第3の方向が平行な方向であり、
前記光学系が前記基板の一端から他端まで相対的に移動した後、前記駆動ステージが前記照射位置を第3の方向に移動させ、
前記駆動ステージの駆動が終了した後、前記光スキャナが前記レーザ光を走査することで、前記基板にレーザ光が再度照射される、請求項17~21のいずれか1項に記載の半導体装置の製造方法。 - 前記光スキャナの走査端において、前記レーザ光が前記基板に照射されない請求項17~22のいずれか1項に記載の半導体装置の製造方法。
- 前記光スキャナが走査範囲の一端から他端に向かう順方向と前記他端から前記一端に向かう逆方向とに往復動作し、
前記光スキャナが前記順方向に動作している間において、前記レーザ光が前記基板に照射され、
前記光スキャナが前記逆方向に動作している間において、前記レーザ光が遮光されている請求項17~23のいずれか1項に記載の半導体装置の製造方法。 - 前記レーザ光が基板に照射されることで、前記基板上の非晶質膜が結晶化して、結晶化膜が形成される、
請求項17~24のいずれか1項に記載の半導体装置の製造方法。 - 前記レーザ光が基板に照射されることで、前記基板上の半導体膜が活性化する、請求項17~24のいずれか1項に記載の半導体装置の製造方法。
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CN (1) | CN117546272A (ja) |
WO (1) | WO2023276182A1 (ja) |
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JP2002231628A (ja) * | 2001-02-01 | 2002-08-16 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
JP2005333117A (ja) * | 2004-04-23 | 2005-12-02 | Semiconductor Energy Lab Co Ltd | レーザ照射装置及び半導体装置の作製方法 |
JP2009518864A (ja) * | 2005-12-05 | 2009-05-07 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 膜を加工するためのシステム及び方法並びに薄膜 |
JP2011044502A (ja) * | 2009-08-19 | 2011-03-03 | Sony Corp | 光照射装置及びアニール装置 |
JP2016119470A (ja) * | 2014-12-17 | 2016-06-30 | ウルトラテック インク | 超短期滞留時間でのレーザアニーリングシステム及び方法 |
JP2018064048A (ja) * | 2016-10-14 | 2018-04-19 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
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2021
- 2021-11-17 JP JP2023531344A patent/JPWO2023276182A1/ja active Pending
- 2021-11-17 WO PCT/JP2021/042254 patent/WO2023276182A1/ja active Application Filing
- 2021-11-17 CN CN202180099818.1A patent/CN117546272A/zh active Pending
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JPS58103140A (ja) * | 1981-12-16 | 1983-06-20 | Fujitsu Ltd | レ−ザアニ−ル方法 |
JP2002231628A (ja) * | 2001-02-01 | 2002-08-16 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
JP2005333117A (ja) * | 2004-04-23 | 2005-12-02 | Semiconductor Energy Lab Co Ltd | レーザ照射装置及び半導体装置の作製方法 |
JP2009518864A (ja) * | 2005-12-05 | 2009-05-07 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 膜を加工するためのシステム及び方法並びに薄膜 |
JP2011044502A (ja) * | 2009-08-19 | 2011-03-03 | Sony Corp | 光照射装置及びアニール装置 |
JP2016119470A (ja) * | 2014-12-17 | 2016-06-30 | ウルトラテック インク | 超短期滞留時間でのレーザアニーリングシステム及び方法 |
JP2018064048A (ja) * | 2016-10-14 | 2018-04-19 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
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