IT1244053B - Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione. - Google Patents
Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione.Info
- Publication number
- IT1244053B IT1244053B IT02185390A IT2185390A IT1244053B IT 1244053 B IT1244053 B IT 1244053B IT 02185390 A IT02185390 A IT 02185390A IT 2185390 A IT2185390 A IT 2185390A IT 1244053 B IT1244053 B IT 1244053B
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing
- memory device
- semiconductor memory
- highly integrated
- integrated semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900012555A KR930007194B1 (ko) | 1990-08-14 | 1990-08-14 | 반도체 장치 및 그 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9021853A0 IT9021853A0 (it) | 1990-10-24 |
| IT9021853A1 IT9021853A1 (it) | 1992-04-24 |
| IT1244053B true IT1244053B (it) | 1994-07-05 |
Family
ID=19302368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT02185390A IT1244053B (it) | 1990-08-14 | 1990-10-24 | Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5124765A (it) |
| JP (1) | JPH0727978B2 (it) |
| KR (1) | KR930007194B1 (it) |
| CN (1) | CN1030631C (it) |
| DE (1) | DE4034995C2 (it) |
| FR (1) | FR2665982B1 (it) |
| GB (1) | GB2247105B (it) |
| HK (1) | HK189895A (it) |
| IT (1) | IT1244053B (it) |
| NL (1) | NL9002376A (it) |
| RU (1) | RU2127928C1 (it) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4122038C2 (de) * | 1990-07-03 | 1994-08-25 | Mitsubishi Electric Corp | Herstellungsverfahren für einen DRAM |
| ATE137048T1 (de) * | 1992-08-10 | 1996-05-15 | Siemens Ag | Dram-zellenanordnung |
| US5739576A (en) * | 1995-10-06 | 1998-04-14 | Micron Technology, Inc. | Integrated chip multilayer decoupling capacitors |
| US6150211A (en) | 1996-12-11 | 2000-11-21 | Micron Technology, Inc. | Methods of forming storage capacitors in integrated circuitry memory cells and integrated circuitry |
| US6020609A (en) * | 1997-10-31 | 2000-02-01 | Texas Instruments - Acer Incorporated | DRAM cell with a rugged stacked trench (RST) capacitor |
| US5942777A (en) * | 1998-05-05 | 1999-08-24 | Sun Microsystems, Inc. | Memory device including a memory array having a combination of trench capacitor DRAM cells and stacked capacitor DRAM cells |
| JP4005805B2 (ja) * | 2001-12-17 | 2007-11-14 | 株式会社東芝 | 半導体装置 |
| KR20040009383A (ko) * | 2002-07-23 | 2004-01-31 | 삼성전자주식회사 | 스택형 커패시터 및 트랜치형 커패시터를 포함하는 반도체메모리 소자 및 그 제조 방법 |
| CN1324671C (zh) * | 2002-09-06 | 2007-07-04 | 旺宏电子股份有限公司 | 波浪状电容器及其制造方法 |
| DE102004043857B3 (de) * | 2004-09-10 | 2006-03-30 | Infineon Technologies Ag | DRAM-Zellenpaar und DRAM-Speicherzellenfeld mit Stack- und Trench-Speicherzellen sowie Verfahren zur Herstellung eines DRAM-Speicherzellenfeldes |
| KR101128982B1 (ko) * | 2008-03-21 | 2012-03-23 | 주식회사 하이닉스반도체 | 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치 |
| JP3197990U (ja) * | 2015-03-31 | 2015-06-11 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
| US11387242B2 (en) | 2020-03-03 | 2022-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memory (NVM) cell structure to increase reliability |
| US11152383B2 (en) * | 2020-03-03 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memory (NVM) cell structure to increase reliability |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61177771A (ja) * | 1985-02-04 | 1986-08-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0795566B2 (ja) * | 1985-12-12 | 1995-10-11 | 松下電子工業株式会社 | 半導体メモリ装置 |
| JPH0815207B2 (ja) * | 1986-02-04 | 1996-02-14 | 富士通株式会社 | 半導体記憶装置 |
| JPS63146461A (ja) * | 1986-12-10 | 1988-06-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPS63239969A (ja) * | 1987-03-27 | 1988-10-05 | Sony Corp | メモリ装置 |
| DE3856143T2 (de) * | 1987-06-17 | 1998-10-29 | Fujitsu Ltd | Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff |
| KR900019227A (ko) * | 1988-05-18 | 1990-12-24 | 아오이 죠이치 | 적층형 캐피시터를 갖춘 반도체기억장치 및 그 제조방법 |
| JP2674085B2 (ja) * | 1988-05-18 | 1997-11-05 | 富士通株式会社 | ダイナミック型半導体記憶装置及びその製造方法 |
| JPH0276258A (ja) * | 1988-09-13 | 1990-03-15 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0294471A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| JPH02106958A (ja) * | 1988-10-17 | 1990-04-19 | Hitachi Ltd | 半導体装置 |
| EP0370407A1 (en) * | 1988-11-18 | 1990-05-30 | Nec Corporation | Semiconductor memory device of one transistor - one capacitor memory cell type |
| KR920010695B1 (ko) * | 1989-05-19 | 1992-12-12 | 삼성전자 주식회사 | 디램셀 및 그 제조방법 |
| KR910013554A (ko) * | 1989-12-08 | 1991-08-08 | 김광호 | 반도체 장치 및 그 제조방법 |
| KR950000500B1 (ko) * | 1989-08-31 | 1995-01-24 | 금성일렉트론 주식회사 | 디램셀 커패시터 제조방법 및 구조 |
-
1990
- 1990-08-14 KR KR1019900012555A patent/KR930007194B1/ko not_active IP Right Cessation
- 1990-10-24 IT IT02185390A patent/IT1244053B/it active IP Right Grant
- 1990-10-31 NL NL9002376A patent/NL9002376A/nl not_active Application Discontinuation
- 1990-11-01 JP JP29704490A patent/JPH0727978B2/ja not_active Expired - Lifetime
- 1990-11-03 DE DE4034995A patent/DE4034995C2/de not_active Expired - Fee Related
- 1990-11-05 GB GB9023987A patent/GB2247105B/en not_active Expired - Fee Related
- 1990-11-05 FR FR9013681A patent/FR2665982B1/fr not_active Expired - Lifetime
- 1990-11-14 RU SU4831528A patent/RU2127928C1/ru active
- 1990-11-15 CN CN90109275A patent/CN1030631C/zh not_active Expired - Fee Related
-
1991
- 1991-01-04 US US07/637,558 patent/US5124765A/en not_active Expired - Lifetime
-
1995
- 1995-12-21 HK HK189895A patent/HK189895A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL9002376A (nl) | 1992-03-02 |
| GB2247105A (en) | 1992-02-19 |
| CN1030631C (zh) | 1996-01-03 |
| GB2247105B (en) | 1995-04-05 |
| FR2665982A1 (fr) | 1992-02-21 |
| RU2127928C1 (ru) | 1999-03-20 |
| FR2665982B1 (fr) | 1992-10-30 |
| JPH0727978B2 (ja) | 1995-03-29 |
| GB9023987D0 (en) | 1990-12-19 |
| JPH0496272A (ja) | 1992-03-27 |
| DE4034995A1 (de) | 1992-02-20 |
| CN1059050A (zh) | 1992-02-26 |
| HK189895A (en) | 1995-12-29 |
| IT9021853A1 (it) | 1992-04-24 |
| IT9021853A0 (it) | 1990-10-24 |
| DE4034995C2 (de) | 1995-11-23 |
| US5124765A (en) | 1992-06-23 |
| KR930007194B1 (ko) | 1993-07-31 |
| KR920005349A (ko) | 1992-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971029 |