DE69103176T2 - Halbleiterspeichervorrichtung. - Google Patents

Halbleiterspeichervorrichtung.

Info

Publication number
DE69103176T2
DE69103176T2 DE69103176T DE69103176T DE69103176T2 DE 69103176 T2 DE69103176 T2 DE 69103176T2 DE 69103176 T DE69103176 T DE 69103176T DE 69103176 T DE69103176 T DE 69103176T DE 69103176 T2 DE69103176 T2 DE 69103176T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69103176T
Other languages
English (en)
Other versions
DE69103176D1 (de
Inventor
Shintaro Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69103176D1 publication Critical patent/DE69103176D1/de
Publication of DE69103176T2 publication Critical patent/DE69103176T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
DE69103176T 1990-02-19 1991-02-19 Halbleiterspeichervorrichtung. Expired - Fee Related DE69103176T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3895790 1990-02-19

Publications (2)

Publication Number Publication Date
DE69103176D1 DE69103176D1 (de) 1994-09-08
DE69103176T2 true DE69103176T2 (de) 1994-12-08

Family

ID=12539667

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69103176T Expired - Fee Related DE69103176T2 (de) 1990-02-19 1991-02-19 Halbleiterspeichervorrichtung.

Country Status (3)

Country Link
US (1) US5267208A (de)
EP (1) EP0443811B1 (de)
DE (1) DE69103176T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69232543D1 (de) * 1991-12-30 2002-05-16 At & T Corp Statischer RAM-Speicher mit abgeglichenem Widerstand in einer integrierten Schaltung
US6740940B2 (en) * 2001-11-27 2004-05-25 Samsung Electronics Co., Ltd. Semiconductor memory devices having dummy active regions
JP4907563B2 (ja) 2008-01-16 2012-03-28 パナソニック株式会社 半導体記憶装置
KR101185554B1 (ko) * 2009-03-23 2012-09-24 에스케이하이닉스 주식회사 반도체 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123168A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd 半導体記憶装置
JPH0680806B2 (ja) * 1986-11-18 1994-10-12 日本電気株式会社 スタテイツク型ｍｉｓメモリセル
JPS63181355A (ja) * 1987-01-22 1988-07-26 Nec Yamagata Ltd 半導体装置
JPS63211739A (ja) * 1987-02-27 1988-09-02 Nec Corp 半導体装置
JPH0715952B2 (ja) * 1988-04-13 1995-02-22 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0443811A2 (de) 1991-08-28
US5267208A (en) 1993-11-30
EP0443811B1 (de) 1994-08-03
EP0443811A3 (en) 1991-10-30
DE69103176D1 (de) 1994-09-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee