DE69018841D1 - Halbleiterspeicheranordnung. - Google Patents
Halbleiterspeicheranordnung.Info
- Publication number
- DE69018841D1 DE69018841D1 DE69018841T DE69018841T DE69018841D1 DE 69018841 D1 DE69018841 D1 DE 69018841D1 DE 69018841 T DE69018841 T DE 69018841T DE 69018841 T DE69018841 T DE 69018841T DE 69018841 D1 DE69018841 D1 DE 69018841D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1018687A JPH02199696A (ja) | 1989-01-27 | 1989-01-27 | 半導体メモリ装置 |
JP1018686A JPH02199695A (ja) | 1989-01-27 | 1989-01-27 | 半導体メモリ装置 |
JP1018688A JPH02199697A (ja) | 1989-01-27 | 1989-01-27 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69018841D1 true DE69018841D1 (de) | 1995-06-01 |
DE69018841T2 DE69018841T2 (de) | 1995-11-02 |
Family
ID=27282327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1990618841 Expired - Fee Related DE69018841T2 (de) | 1989-01-27 | 1990-01-25 | Halbleiterspeicheranordnung. |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0380109B1 (de) |
DE (1) | DE69018841T2 (de) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6034192B2 (ja) * | 1977-04-18 | 1985-08-07 | 株式会社日立製作所 | メモリ |
JPS55139690A (en) * | 1979-04-16 | 1980-10-31 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
JPS5842556B2 (ja) * | 1979-08-30 | 1983-09-20 | 富士通株式会社 | 半導体記憶装置 |
DE2944141A1 (de) * | 1979-11-02 | 1981-05-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte speicheranordnung |
-
1990
- 1990-01-25 DE DE1990618841 patent/DE69018841T2/de not_active Expired - Fee Related
- 1990-01-25 EP EP19900101521 patent/EP0380109B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0380109A3 (de) | 1991-03-13 |
EP0380109B1 (de) | 1995-04-26 |
EP0380109A2 (de) | 1990-08-01 |
DE69018841T2 (de) | 1995-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |