FR2665982B1 - Dispositif de memoire a semi-conducteur a haut degre d'integration et procede de fabrication d'un tel dispositif. - Google Patents

Dispositif de memoire a semi-conducteur a haut degre d'integration et procede de fabrication d'un tel dispositif.

Info

Publication number
FR2665982B1
FR2665982B1 FR9013681A FR9013681A FR2665982B1 FR 2665982 B1 FR2665982 B1 FR 2665982B1 FR 9013681 A FR9013681 A FR 9013681A FR 9013681 A FR9013681 A FR 9013681A FR 2665982 B1 FR2665982 B1 FR 2665982B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor memory
integrated semiconductor
high integrated
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9013681A
Other languages
English (en)
Other versions
FR2665982A1 (fr
Inventor
Kim Seong-Tae
Kim Kyung-Hun
Ko Jae-Hong
Choi Su-Han
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2665982A1 publication Critical patent/FR2665982A1/fr
Application granted granted Critical
Publication of FR2665982B1 publication Critical patent/FR2665982B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
FR9013681A 1990-08-14 1990-11-05 Dispositif de memoire a semi-conducteur a haut degre d'integration et procede de fabrication d'un tel dispositif. Expired - Lifetime FR2665982B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900012555A KR930007194B1 (ko) 1990-08-14 1990-08-14 반도체 장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
FR2665982A1 FR2665982A1 (fr) 1992-02-21
FR2665982B1 true FR2665982B1 (fr) 1992-10-30

Family

ID=19302368

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9013681A Expired - Lifetime FR2665982B1 (fr) 1990-08-14 1990-11-05 Dispositif de memoire a semi-conducteur a haut degre d'integration et procede de fabrication d'un tel dispositif.

Country Status (11)

Country Link
US (1) US5124765A (fr)
JP (1) JPH0727978B2 (fr)
KR (1) KR930007194B1 (fr)
CN (1) CN1030631C (fr)
DE (1) DE4034995C2 (fr)
FR (1) FR2665982B1 (fr)
GB (1) GB2247105B (fr)
HK (1) HK189895A (fr)
IT (1) IT1244053B (fr)
NL (1) NL9002376A (fr)
RU (1) RU2127928C1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4122038C2 (de) * 1990-07-03 1994-08-25 Mitsubishi Electric Corp Herstellungsverfahren für einen DRAM
WO1994003898A1 (fr) * 1992-08-10 1994-02-17 Siemens Aktiengesellschaft Configuration de cellules dram
US5739576A (en) * 1995-10-06 1998-04-14 Micron Technology, Inc. Integrated chip multilayer decoupling capacitors
US6150211A (en) * 1996-12-11 2000-11-21 Micron Technology, Inc. Methods of forming storage capacitors in integrated circuitry memory cells and integrated circuitry
US6020609A (en) * 1997-10-31 2000-02-01 Texas Instruments - Acer Incorporated DRAM cell with a rugged stacked trench (RST) capacitor
US5942777A (en) * 1998-05-05 1999-08-24 Sun Microsystems, Inc. Memory device including a memory array having a combination of trench capacitor DRAM cells and stacked capacitor DRAM cells
JP4005805B2 (ja) * 2001-12-17 2007-11-14 株式会社東芝 半導体装置
KR20040009383A (ko) * 2002-07-23 2004-01-31 삼성전자주식회사 스택형 커패시터 및 트랜치형 커패시터를 포함하는 반도체메모리 소자 및 그 제조 방법
CN1324671C (zh) * 2002-09-06 2007-07-04 旺宏电子股份有限公司 波浪状电容器及其制造方法
DE102004043857B3 (de) * 2004-09-10 2006-03-30 Infineon Technologies Ag DRAM-Zellenpaar und DRAM-Speicherzellenfeld mit Stack- und Trench-Speicherzellen sowie Verfahren zur Herstellung eines DRAM-Speicherzellenfeldes
KR101128982B1 (ko) * 2008-03-21 2012-03-23 주식회사 하이닉스반도체 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치
JP3197990U (ja) * 2015-03-31 2015-06-11 セイコーエプソン株式会社 電気光学装置、及び電子機器
US11152383B2 (en) * 2020-03-03 2021-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory (NVM) cell structure to increase reliability
US11387242B2 (en) 2020-03-03 2022-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory (NVM) cell structure to increase reliability

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177771A (ja) * 1985-02-04 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0795566B2 (ja) * 1985-12-12 1995-10-11 松下電子工業株式会社 半導体メモリ装置
JPH0815207B2 (ja) * 1986-02-04 1996-02-14 富士通株式会社 半導体記憶装置
JPS63146461A (ja) * 1986-12-10 1988-06-18 Mitsubishi Electric Corp 半導体記憶装置
JPS63239969A (ja) * 1987-03-27 1988-10-05 Sony Corp メモリ装置
DE3856143T2 (de) * 1987-06-17 1998-10-29 Fujitsu Ltd Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff
JP2674085B2 (ja) * 1988-05-18 1997-11-05 富士通株式会社 ダイナミック型半導体記憶装置及びその製造方法
US4951175A (en) * 1988-05-18 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof
JPH0276258A (ja) * 1988-09-13 1990-03-15 Fujitsu Ltd 半導体記憶装置
JPH0294471A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JPH02106958A (ja) * 1988-10-17 1990-04-19 Hitachi Ltd 半導体装置
EP0370407A1 (fr) * 1988-11-18 1990-05-30 Nec Corporation Dispositif de mémoire semi-conductrice du type à cellules à un transistor et une capacité
KR920010695B1 (ko) * 1989-05-19 1992-12-12 삼성전자 주식회사 디램셀 및 그 제조방법
KR910013554A (ko) * 1989-12-08 1991-08-08 김광호 반도체 장치 및 그 제조방법
KR950000500B1 (ko) * 1989-08-31 1995-01-24 금성일렉트론 주식회사 디램셀 커패시터 제조방법 및 구조

Also Published As

Publication number Publication date
HK189895A (en) 1995-12-29
GB2247105B (en) 1995-04-05
IT9021853A0 (it) 1990-10-24
FR2665982A1 (fr) 1992-02-21
JPH0727978B2 (ja) 1995-03-29
DE4034995A1 (de) 1992-02-20
KR930007194B1 (ko) 1993-07-31
US5124765A (en) 1992-06-23
GB9023987D0 (en) 1990-12-19
IT9021853A1 (it) 1992-04-24
KR920005349A (ko) 1992-03-28
CN1030631C (zh) 1996-01-03
NL9002376A (nl) 1992-03-02
GB2247105A (en) 1992-02-19
CN1059050A (zh) 1992-02-26
RU2127928C1 (ru) 1999-03-20
JPH0496272A (ja) 1992-03-27
IT1244053B (it) 1994-07-05
DE4034995C2 (de) 1995-11-23

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Legal Events

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