FR2645346B1 - Dispositif semi-conducteur a trous de traversee d'interconnexion et son procede de fabrication - Google Patents
Dispositif semi-conducteur a trous de traversee d'interconnexion et son procede de fabricationInfo
- Publication number
- FR2645346B1 FR2645346B1 FR8910733A FR8910733A FR2645346B1 FR 2645346 B1 FR2645346 B1 FR 2645346B1 FR 8910733 A FR8910733 A FR 8910733A FR 8910733 A FR8910733 A FR 8910733A FR 2645346 B1 FR2645346 B1 FR 2645346B1
- Authority
- FR
- France
- Prior art keywords
- interconnect
- holes
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1079226A JPH02257643A (ja) | 1989-03-29 | 1989-03-29 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2645346A1 FR2645346A1 (fr) | 1990-10-05 |
FR2645346B1 true FR2645346B1 (fr) | 1993-05-14 |
Family
ID=13683990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8910733A Expired - Fee Related FR2645346B1 (fr) | 1989-03-29 | 1989-08-09 | Dispositif semi-conducteur a trous de traversee d'interconnexion et son procede de fabrication |
Country Status (3)
Country | Link |
---|---|
US (1) | US5037782A (fr) |
JP (1) | JPH02257643A (fr) |
FR (1) | FR2645346B1 (fr) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252842A (en) * | 1991-07-26 | 1993-10-12 | Westinghouse Electric Corp. | Low-loss semiconductor device and backside etching method for manufacturing same |
US5424245A (en) * | 1994-01-04 | 1995-06-13 | Motorola, Inc. | Method of forming vias through two-sided substrate |
US5508231A (en) * | 1994-03-07 | 1996-04-16 | National Semiconductor Corporation | Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits |
JP3374880B2 (ja) * | 1994-10-26 | 2003-02-10 | 三菱電機株式会社 | 半導体装置の製造方法、及び半導体装置 |
JP3081168B2 (ja) * | 1997-04-30 | 2000-08-28 | イビデン株式会社 | 電子部品搭載用基板 |
JP3629902B2 (ja) * | 1997-06-30 | 2005-03-16 | 沖電気工業株式会社 | 半導体素子の配線構造およびその製造方法 |
US5949104A (en) * | 1998-02-07 | 1999-09-07 | Xemod, Inc. | Source connection structure for lateral RF MOS devices |
US7030466B1 (en) | 1999-05-03 | 2006-04-18 | United Microelectronics Corporation | Intermediate structure for making integrated circuit device and wafer |
US7179740B1 (en) | 1999-05-03 | 2007-02-20 | United Microelectronics Corporation | Integrated circuit with improved interconnect structure and process for making same |
US6429509B1 (en) | 1999-05-03 | 2002-08-06 | United Microelectronics Corporation | Integrated circuit with improved interconnect structure and process for making same |
US6935023B2 (en) | 2000-03-08 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Method of forming electrical connection for fluid ejection device |
US6512292B1 (en) | 2000-09-12 | 2003-01-28 | International Business Machines Corporation | Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces |
US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
US7233028B2 (en) * | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
US6659592B2 (en) | 2001-08-16 | 2003-12-09 | Hewlett-Packard Development Company, L.P. | Multiple redundant through hole electrical interconnects and method for forming the same |
JP3872319B2 (ja) * | 2001-08-21 | 2007-01-24 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
US6902872B2 (en) | 2002-07-29 | 2005-06-07 | Hewlett-Packard Development Company, L.P. | Method of forming a through-substrate interconnect |
US6716737B2 (en) | 2002-07-29 | 2004-04-06 | Hewlett-Packard Development Company, L.P. | Method of forming a through-substrate interconnect |
US6888223B2 (en) * | 2003-04-01 | 2005-05-03 | International Business Machines Corporation | Use of photoresist in substrate vias during backside grind |
US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
US7091124B2 (en) | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7425499B2 (en) * | 2004-08-24 | 2008-09-16 | Micron Technology, Inc. | Methods for forming interconnects in vias and microelectronic workpieces including such interconnects |
SG120200A1 (en) * | 2004-08-27 | 2006-03-28 | Micron Technology Inc | Slanted vias for electrical circuits on circuit boards and other substrates |
US7300857B2 (en) * | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
KR100618343B1 (ko) * | 2004-10-28 | 2006-08-31 | 삼성전자주식회사 | 패키징 기판의 제조방법 및 이를 이용한 패키징 방법. |
US7271482B2 (en) * | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US20070045120A1 (en) * | 2005-09-01 | 2007-03-01 | Micron Technology, Inc. | Methods and apparatus for filling features in microfeature workpieces |
US7262134B2 (en) * | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7622377B2 (en) | 2005-09-01 | 2009-11-24 | Micron Technology, Inc. | Microfeature workpiece substrates having through-substrate vias, and associated methods of formation |
US7863187B2 (en) * | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US8154105B2 (en) * | 2005-09-22 | 2012-04-10 | International Rectifier Corporation | Flip chip semiconductor device and process of its manufacture |
US7749899B2 (en) * | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
US8212331B1 (en) * | 2006-10-02 | 2012-07-03 | Newport Fab, Llc | Method for fabricating a backside through-wafer via in a processed wafer and related structure |
KR101175393B1 (ko) * | 2006-10-17 | 2012-08-20 | 쿠퍼 에셋 엘티디. 엘.엘.씨. | 웨이퍼 비아 형성 |
SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7803714B2 (en) * | 2008-03-31 | 2010-09-28 | Freescale Semiconductor, Inc. | Semiconductor through silicon vias of variable size and method of formation |
JP4794615B2 (ja) * | 2008-11-27 | 2011-10-19 | パナソニック株式会社 | 半導体装置 |
JP2012039005A (ja) * | 2010-08-10 | 2012-02-23 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2010272893A (ja) * | 2010-08-25 | 2010-12-02 | Panasonic Corp | 半導体装置及びその製造方法 |
FR2965659B1 (fr) * | 2010-10-05 | 2013-11-29 | Centre Nat Rech Scient | Procédé de fabrication d'un circuit intégré |
JP5640892B2 (ja) * | 2011-05-23 | 2014-12-17 | 三菱電機株式会社 | 半導体装置 |
US20130277810A1 (en) * | 2012-04-23 | 2013-10-24 | Globalfoundries Singapore Pte. Ltd. | Method for forming heat sink with through silicon vias |
US11398415B2 (en) * | 2018-09-19 | 2022-07-26 | Intel Corporation | Stacked through-silicon vias for multi-device packages |
WO2021038824A1 (fr) * | 2019-08-30 | 2021-03-04 | 三菱電機株式会社 | Dispositif à semi-conducteur |
US20240096968A1 (en) * | 2021-02-17 | 2024-03-21 | Mitsubishi Electric Corporation | Nitride semiconductor device and method for manufacturing nitride semiconductor device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594175A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 電界効果半導体装置 |
JPS6031253A (ja) * | 1983-08-01 | 1985-02-18 | Nec Corp | 半導体装置用放熱板の製造方法 |
JPS60198828A (ja) * | 1984-03-23 | 1985-10-08 | Nec Corp | 半導体装置の製造方法 |
US4707726A (en) * | 1985-04-29 | 1987-11-17 | United Technologies Automotive, Inc. | Heat sink mounting arrangement for a semiconductor |
JPS62122278A (ja) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | 高周波高出力fetの製造方法 |
JPS62211962A (ja) * | 1986-03-12 | 1987-09-17 | Fujitsu Ltd | 高周波半導体装置の製造方法 |
US4733195A (en) * | 1986-07-15 | 1988-03-22 | Texas Instruments Incorporated | Travelling-wave microwave device |
JPS63131555A (ja) * | 1986-11-20 | 1988-06-03 | Mitsubishi Electric Corp | 半導体装置 |
JPS63155673A (ja) * | 1986-12-18 | 1988-06-28 | Nec Corp | 電界効果型半導体装置 |
JPH0720363B2 (ja) * | 1987-01-16 | 1995-03-06 | 株式会社日立製作所 | アクセス駆動機構 |
US4807022A (en) * | 1987-05-01 | 1989-02-21 | Raytheon Company | Simultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuits |
US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
US4800420A (en) * | 1987-05-14 | 1989-01-24 | Hughes Aircraft Company | Two-terminal semiconductor diode arrangement |
EP0316799B1 (fr) * | 1987-11-13 | 1994-07-27 | Nissan Motor Co., Ltd. | Dispositif semi-conducteur |
-
1989
- 1989-03-29 JP JP1079226A patent/JPH02257643A/ja active Pending
- 1989-07-06 US US07/376,014 patent/US5037782A/en not_active Expired - Fee Related
- 1989-08-09 FR FR8910733A patent/FR2645346B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5037782A (en) | 1991-08-06 |
FR2645346A1 (fr) | 1990-10-05 |
JPH02257643A (ja) | 1990-10-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |