ITMI911264A0 - Dispositivo di memoria a semiconduttore non volatile e suo metodo di fabbricazione - Google Patents

Dispositivo di memoria a semiconduttore non volatile e suo metodo di fabbricazione

Info

Publication number
ITMI911264A0
ITMI911264A0 IT91MI1264A ITMI911264A ITMI911264A0 IT MI911264 A0 ITMI911264 A0 IT MI911264A0 IT 91MI1264 A IT91MI1264 A IT 91MI1264A IT MI911264 A ITMI911264 A IT MI911264A IT MI911264 A0 ITMI911264 A0 IT MI911264A0
Authority
IT
Italy
Prior art keywords
manufacturing
memory device
semiconductor memory
volatile semiconductor
volatile
Prior art date
Application number
IT91MI1264A
Other languages
English (en)
Inventor
Jeong-Hyeok Choi
Geon-Su Kim
Yun-Seong Sin
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI911264A0 publication Critical patent/ITMI911264A0/it
Publication of ITMI911264A1 publication Critical patent/ITMI911264A1/it
Application granted granted Critical
Publication of IT1248381B publication Critical patent/IT1248381B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
ITMI911264A 1990-12-21 1991-05-09 Dispositivo di memoria a semiconduttore non volatile e suo metodo di fabbricazione IT1248381B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900021387A KR920013709A (ko) 1990-12-21 1990-12-21 불휘발성 반도체 메모리장치 및 그 제조방법

Publications (3)

Publication Number Publication Date
ITMI911264A0 true ITMI911264A0 (it) 1991-05-09
ITMI911264A1 ITMI911264A1 (it) 1992-11-09
IT1248381B IT1248381B (it) 1995-01-11

Family

ID=19308123

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI911264A IT1248381B (it) 1990-12-21 1991-05-09 Dispositivo di memoria a semiconduttore non volatile e suo metodo di fabbricazione

Country Status (7)

Country Link
US (1) US5208175A (it)
JP (1) JP2823711B2 (it)
KR (1) KR920013709A (it)
DE (1) DE4115185C2 (it)
FR (1) FR2670951B1 (it)
GB (1) GB2251123B (it)
IT (1) IT1248381B (it)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3065164B2 (ja) * 1992-03-18 2000-07-12 富士通株式会社 半導体装置及びその製造方法
JP2585180B2 (ja) * 1992-09-02 1997-02-26 三菱電機株式会社 半導体記憶装置およびその製造方法
US5371026A (en) * 1992-11-30 1994-12-06 Motorola Inc. Method for fabricating paired MOS transistors having a current-gain differential
US5493140A (en) * 1993-07-05 1996-02-20 Sharp Kabushiki Kaisha Nonvolatile memory cell and method of producing the same
US5393689A (en) * 1994-02-28 1995-02-28 Motorola, Inc. Process for forming a static-random-access memory cell
US5595922A (en) * 1994-10-28 1997-01-21 Texas Instruments Process for thickening selective gate oxide regions
US5801076A (en) * 1995-02-21 1998-09-01 Advanced Micro Devices, Inc. Method of making non-volatile memory device having a floating gate with enhanced charge retention
US5858844A (en) * 1995-06-07 1999-01-12 Advanced Micro Devices, Inc. Method for construction and fabrication of submicron field-effect transistors by optimization of poly oxide process
US5556799A (en) * 1995-11-13 1996-09-17 United Microelectronics Corporation Process for fabricating a flash EEPROM
US6236085B1 (en) 1996-11-11 2001-05-22 Denso Corporation Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate
KR100223769B1 (ko) * 1996-12-24 1999-10-15 김영환 메모리 소자의 유전막 형성 방법
US5986302A (en) * 1997-02-04 1999-11-16 Denso Corporation Semiconductor memory device
KR100234414B1 (ko) 1997-03-05 1999-12-15 윤종용 불휘발성 메모리장치 및 그 제조방법
US6251763B1 (en) * 1997-06-30 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
JPH1154746A (ja) * 1997-07-31 1999-02-26 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
EP0917185B1 (en) * 1997-11-14 2009-01-07 STMicroelectronics S.r.l. Deposition process of in-situ doped polysilicon layers
JPH11154711A (ja) * 1997-11-20 1999-06-08 Toshiba Corp 半導体装置の製造方法
US6015736A (en) * 1997-12-19 2000-01-18 Advanced Micro Devices, Inc. Method and system for gate stack reoxidation control
US6472281B2 (en) * 1998-02-03 2002-10-29 Matsushita Electronics Corporation Method for fabricating semiconductor device using a CVD insulator film
US6259131B1 (en) * 1998-05-27 2001-07-10 Taiwan Semiconductor Manufacturing Company Poly tip and self aligned source for split-gate flash cell
US6355580B1 (en) * 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US6548363B1 (en) * 2000-04-11 2003-04-15 Taiwan Semiconductor Manufacturing Company Method to reduce the gate induced drain leakage current in CMOS devices
CN100347833C (zh) * 2002-02-01 2007-11-07 Nxp股份有限公司 在一个加工步骤中形成不同厚度的高质量氧化物层的方法
US6979858B2 (en) * 2003-01-06 2005-12-27 Oki Electric Industry Co., Ltd. Semiconductor device having a gate electrode formed on a gate oxide film
US7329577B2 (en) * 2004-01-22 2008-02-12 Oki Electric Industry Co., Ltd. Method of manufacturing nonvolatile semiconductor storage device
KR100583609B1 (ko) * 2004-07-05 2006-05-26 삼성전자주식회사 반도체 장치의 게이트 구조물 제조방법 및 이를 이용한불휘발성 메모리 장치의 셀 게이트 구조물 제조방법
KR100635199B1 (ko) * 2005-05-12 2006-10-16 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
JP2007027430A (ja) 2005-07-15 2007-02-01 Toshiba Corp 不揮発性半導体メモリ
US7763928B2 (en) * 2007-05-31 2010-07-27 United Microelectronics Corp. Multi-time programmable memory
CN101330107B (zh) * 2007-06-18 2010-06-09 联华电子股份有限公司 多次可编程存储器及其制造方法
JP5086800B2 (ja) 2007-12-28 2012-11-28 株式会社東芝 半導体装置及びその製造方法
FR2931289A1 (fr) * 2008-05-13 2009-11-20 St Microelectronics Rousset Memoire a structure du type eeprom et a lecture seule
US8609554B2 (en) 2011-01-19 2013-12-17 Macronix International Co., Ltd. Semiconductor structure and method for manufacturing the same
CN113053755A (zh) * 2021-03-29 2021-06-29 弘大芯源(深圳)半导体有限公司 一种大功率高电压晶体管的实现方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544742A (en) * 1978-09-26 1980-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS596062B2 (ja) * 1978-11-25 1984-02-08 三菱電機株式会社 半導体装置の製造方法
JPS5649570A (en) * 1979-09-28 1981-05-06 Hitachi Ltd Semiconductor memory and its manufacturing process
JPS56161673A (en) * 1980-05-16 1981-12-12 Nec Corp Semiconductor device and manufacture thereof
US4519849A (en) * 1980-10-14 1985-05-28 Intel Corporation Method of making EPROM cell with reduced programming voltage
US4412310A (en) * 1980-10-14 1983-10-25 Intel Corporation EPROM Cell with reduced programming voltage and method of fabrication
JPS5848439A (ja) * 1981-09-17 1983-03-22 Nec Corp 半導体集積回路装置
JPS5850771A (ja) * 1981-09-21 1983-03-25 Hitachi Ltd 再書込み可能な高集積ｒｏｍ及びその製造方法
JPS5880870A (ja) * 1981-11-09 1983-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
JPS58158970A (ja) * 1982-03-16 1983-09-21 Nec Corp 半導体装置の製造方法
US4697330A (en) * 1983-02-23 1987-10-06 Texas Instruments Incorporated Floating gate memory process with improved dielectric
US4635347A (en) * 1985-03-29 1987-01-13 Advanced Micro Devices, Inc. Method of fabricating titanium silicide gate electrodes and interconnections
US4804637A (en) * 1985-09-27 1989-02-14 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
US4892840A (en) * 1986-03-27 1990-01-09 Texas Instruments Incorporated EPROM with increased floating gate/control gate coupling
JPS6381947A (ja) * 1986-09-26 1988-04-12 Hitachi Micro Comput Eng Ltd 半導体集積回路装置の製造方法
US4775642A (en) * 1987-02-02 1988-10-04 Motorola, Inc. Modified source/drain implants in a double-poly non-volatile memory process
JPS63248174A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置の製造方法
JPS63257277A (ja) * 1987-04-14 1988-10-25 Fujitsu Ltd 半導体装置の製造方法
US4888293A (en) * 1987-07-10 1989-12-19 Giant Bay Biotech Inc. Adapting bacteria to low pH and high arsenic concentration for use in oxidizing sulfide ores
US4923752A (en) * 1988-01-19 1990-05-08 E. I. Du Pont De Nemours & Co. Sizing for carbon fiber
EP0325202A1 (de) * 1988-01-20 1989-07-26 Siemens Aktiengesellschaft Verfahren zur Herstellung von VLSI-Logikschaltungen in Poly-Silizium-Gate-NMOS-Technologie mit integriertem EEPROM-Speicher für Tunnelstromprogrammierung
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
JPH02159041A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
FR2642900B1 (fr) * 1989-01-17 1991-05-10 Sgs Thomson Microelectronics Procede de fabrication de circuits integres a transistors de memoire eprom et a transistors logiques
US5019879A (en) * 1990-03-15 1991-05-28 Chiu Te Long Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area
JPH06338253A (ja) * 1993-05-31 1994-12-06 Matsushita Electric Ind Co Ltd 電子源の製造方法

Also Published As

Publication number Publication date
KR920013709A (ko) 1992-07-29
US5208175A (en) 1993-05-04
IT1248381B (it) 1995-01-11
FR2670951B1 (fr) 2001-03-09
GB9110224D0 (en) 1991-07-03
JP2823711B2 (ja) 1998-11-11
JPH06310731A (ja) 1994-11-04
FR2670951A1 (fr) 1992-06-26
ITMI911264A1 (it) 1992-11-09
GB2251123A (en) 1992-06-24
DE4115185A1 (de) 1992-07-02
GB2251123B (en) 1995-02-15
DE4115185C2 (de) 1995-06-08

Similar Documents

Publication Publication Date Title
ITMI911264A0 (it) Dispositivo di memoria a semiconduttore non volatile e suo metodo di fabbricazione
ITMI911218A0 (it) Dispositivo a semiconduttore di memoria non volatile
ITMI921651A1 (it) Dispositivo a semiconduttore e suo metodo di fabbricazione
DE69130993D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69326370D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69520902D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69325152D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
ITMI910107A1 (it) Dispositivo di memoria a semiconduttore
DE69328517T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69417712D1 (de) Nichtflüchtige Halbleiter-Speichereinrichtung
KR960012535A (ko) 불휘발성 반도체 기억장치 및 그 제조방법
DE69230750D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69317937T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
IT9021853A0 (it) Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione
DE69427835D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69123814T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69406037T2 (de) Nicht-flüchtige Halbleiterspeicheranordnung
ITMI912808A0 (it) Dispositivo di memoria a semiconduttore
KR900012281A (ko) 불휘발성 반도체메모리와 그 제조방법
EP0518000A3 (en) Non-volatile semiconductor memory device and method for manufacturing the same
ITMI923001A1 (it) Dispositivo di memoria a semiconduttore e suo metodo di funzionamento
IT1274305B (it) Dispositivo a semiconduttore di memoria
KR960012536A (ko) 비휘발성 반도체 메모리 장치 및 그의 제조 방법
KR960012534A (ko) 불 휘발성 반도체 기억 장치 및 그 제조 방법
DE69323378T2 (de) Nicht-flüchtige Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970529