DE69406074T2 - Integrierte Halbleiterspeicherschaltung - Google Patents

Integrierte Halbleiterspeicherschaltung

Info

Publication number
DE69406074T2
DE69406074T2 DE69406074T DE69406074T DE69406074T2 DE 69406074 T2 DE69406074 T2 DE 69406074T2 DE 69406074 T DE69406074 T DE 69406074T DE 69406074 T DE69406074 T DE 69406074T DE 69406074 T2 DE69406074 T2 DE 69406074T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory circuit
integrated semiconductor
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69406074T
Other languages
English (en)
Other versions
DE69406074D1 (de
Inventor
Chung K Chang
Johnny C Chen
Buskirk Michael A Van
Lee E Cleveland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE69406074D1 publication Critical patent/DE69406074D1/de
Application granted granted Critical
Publication of DE69406074T2 publication Critical patent/DE69406074T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
DE69406074T 1993-08-26 1994-07-25 Integrierte Halbleiterspeicherschaltung Expired - Fee Related DE69406074T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/112,033 US5349558A (en) 1993-08-26 1993-08-26 Sector-based redundancy architecture

Publications (2)

Publication Number Publication Date
DE69406074D1 DE69406074D1 (de) 1997-11-13
DE69406074T2 true DE69406074T2 (de) 1998-04-09

Family

ID=22341773

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69406074T Expired - Fee Related DE69406074T2 (de) 1993-08-26 1994-07-25 Integrierte Halbleiterspeicherschaltung

Country Status (5)

Country Link
US (1) US5349558A (de)
EP (1) EP0640918B1 (de)
JP (1) JP3657290B2 (de)
KR (1) KR950006873A (de)
DE (1) DE69406074T2 (de)

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US5359570A (en) * 1992-11-13 1994-10-25 Silicon Storage Technology, Inc. Solid state peripheral storage device
JPH07230686A (ja) * 1994-02-18 1995-08-29 Toshiba Corp 半導体記憶装置
US5488701A (en) * 1994-11-17 1996-01-30 International Business Machines Corporation In log sparing for log structured arrays
JPH08213572A (ja) * 1994-11-30 1996-08-20 Nkk Corp 不揮発性半導体装置およびその製造方法
EP0797145B1 (de) * 1996-03-22 2002-06-12 STMicroelectronics S.r.l. Sektoriziertes elektrisch löschbares und programmierbares nichtflüchtiges Speichergerät mit Redundanz
EP0806773B1 (de) * 1996-05-09 2003-03-19 STMicroelectronics S.r.l. Elektrische löschbare und programmierbare nichtflüchtige Speicheranordnung mit prüfbaren Redundanzschaltungen
US5828599A (en) * 1996-08-06 1998-10-27 Simtek Corporation Memory with electrically erasable and programmable redundancy
US6031757A (en) * 1996-11-22 2000-02-29 Macronix International Co., Ltd. Write protected, non-volatile memory device with user programmable sector lock capability
WO1998022950A1 (en) * 1996-11-22 1998-05-28 Macronix International Co., Ltd. Write protected, non-volatile memory device with user programmable sector lock capability
JP2000504504A (ja) * 1997-02-12 2000-04-11 ヒュンダイ エレクトロニクス アメリカ インコーポレイテッド 不揮発性メモリ構造
US5917763A (en) * 1997-09-12 1999-06-29 Micron Technology, Inc. Method and apparatus for repairing opens on global column lines
DE59809488D1 (de) * 1998-05-25 2003-10-09 Abb Turbo Systems Ag Baden Radialverdichter
US6260156B1 (en) 1998-12-04 2001-07-10 Datalight, Inc. Method and system for managing bad areas in flash memory
JP2000231795A (ja) * 1999-02-08 2000-08-22 Sanyo Electric Co Ltd 半導体メモリ装置
US6397313B1 (en) * 1999-10-19 2002-05-28 Advanced Micro Devices, Inc. Redundant dual bank architecture for a simultaneous operation flash memory
JP3893005B2 (ja) * 2000-01-06 2007-03-14 富士通株式会社 不揮発性半導体記憶装置
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6285583B1 (en) * 2000-02-17 2001-09-04 Advanced Micro Devices, Inc. High speed sensing to detect write protect state in a flash memory device
US6310805B1 (en) 2000-03-07 2001-10-30 Advanced Micro Devices, Inc. Architecture for a dual-bank page mode memory with redundancy
JP2002063797A (ja) 2000-08-22 2002-02-28 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6813735B1 (en) 2000-10-02 2004-11-02 Fasl, Llc. I/O based column redundancy for virtual ground with 2-bit cell flash memory
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
JP2003045195A (ja) * 2001-07-31 2003-02-14 Mitsubishi Electric Corp 半導体メモリ
US6618316B2 (en) * 2001-12-20 2003-09-09 Intel Corporation Pseudo-static single-ended cache cell
WO2003063208A2 (en) * 2002-01-18 2003-07-31 California Institute Of Technology Array-based architecture for molecular electronics
KR100504114B1 (ko) * 2002-08-23 2005-07-27 삼성전자주식회사 불량 셀 구제 기능을 갖는 롬 메모리 장치 및 불량 셀구제 방법
WO2004109706A2 (en) * 2003-06-02 2004-12-16 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
US7242601B2 (en) * 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
US7509543B2 (en) * 2003-06-17 2009-03-24 Micron Technology, Inc. Circuit and method for error test, recordation, and repair
US7437632B2 (en) * 2003-06-24 2008-10-14 Micron Technology, Inc. Circuits and methods for repairing defects in memory devices
US7692952B2 (en) * 2003-07-24 2010-04-06 California Institute Of Technology Nanoscale wire coding for stochastic assembly
KR100633595B1 (ko) * 2004-04-20 2006-10-12 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 구동 방법
US7310004B2 (en) * 2004-05-28 2007-12-18 California Institute Of Technology Apparatus and method of interconnecting nanoscale programmable logic array clusters
US6944075B1 (en) 2005-01-05 2005-09-13 International Business Machines Corporation Variable column redundancy region boundaries in SRAM
US8072834B2 (en) 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US7636259B1 (en) 2006-07-17 2009-12-22 Lallice Semiconductor Corporation Flash memory array with independently erasable sectors
US7512015B1 (en) 2006-07-17 2009-03-31 Lattice Semiconductor Corporation Negative voltage blocking for embedded memories
KR100781976B1 (ko) * 2006-11-02 2007-12-06 삼성전자주식회사 플래시 메모리를 구비하는 반도체 메모리 장치에서의 블록상태 정보 제공방법
CN107092950B (zh) * 2008-03-27 2021-04-09 环球生命科技咨询美国有限责任公司 防止未经授权操作相关联一次性生物过程组件的可伽马灭菌的rfid系统
JP2011518370A (ja) * 2008-03-27 2011-06-23 ジーイー・ヘルスケア・バイオサイエンス・バイオプロセス・コーポレイション 使い捨てバイオプロセス部品の不正使用を防止する方法
US8327066B2 (en) 2008-09-30 2012-12-04 Samsung Electronics Co., Ltd. Method of managing a solid state drive, associated systems and implementations
US8793558B2 (en) 2012-08-27 2014-07-29 Freescale Semiconductor, Inc. Adaptive error correction for non-volatile memories
CN103544995B (zh) 2013-08-27 2016-09-21 华为技术有限公司 一种坏道修复方法及装置
CN106548809A (zh) 2015-09-22 2017-03-29 飞思卡尔半导体公司 处理缺陷非易失性存储器
US10032515B2 (en) 2016-02-26 2018-07-24 Nxp Usa, Inc. Memory repair system and method therefor
CN108735268B (zh) 2017-04-19 2024-01-30 恩智浦美国有限公司 非易失性存储器修复电路
KR102384864B1 (ko) 2017-11-03 2022-04-08 삼성전자주식회사 불량 스트링을 리페어하는 방법 및 불휘발성 메모리 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5088066A (en) * 1989-02-10 1992-02-11 Intel Corporation Redundancy decoding circuit using n-channel transistors
EP0448980B1 (de) * 1990-03-29 1997-06-11 Texas Instruments Incorporated Vorrichtung und Verfahren für die Beseitigung von Fehlern eines Speichers
US5270975A (en) * 1990-03-29 1993-12-14 Texas Instruments Incorporated Memory device having a non-uniform redundancy decoder arrangement
JP2738195B2 (ja) * 1991-12-27 1998-04-08 日本電気株式会社 不揮発性半導体記憶装置
US5278793A (en) * 1992-02-25 1994-01-11 Yeh Tsuei Chi Memory defect masking device

Also Published As

Publication number Publication date
JP3657290B2 (ja) 2005-06-08
JPH0798997A (ja) 1995-04-11
EP0640918A1 (de) 1995-03-01
DE69406074D1 (de) 1997-11-13
KR950006873A (ko) 1995-03-21
EP0640918B1 (de) 1997-10-08
US5349558A (en) 1994-09-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee