DE69127317T2 - Halbleiterspeicherschaltung - Google Patents

Halbleiterspeicherschaltung

Info

Publication number
DE69127317T2
DE69127317T2 DE69127317T DE69127317T DE69127317T2 DE 69127317 T2 DE69127317 T2 DE 69127317T2 DE 69127317 T DE69127317 T DE 69127317T DE 69127317 T DE69127317 T DE 69127317T DE 69127317 T2 DE69127317 T2 DE 69127317T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory circuit
circuit
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127317T
Other languages
English (en)
Other versions
DE69127317D1 (de
Inventor
Masaru Uesugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE69127317D1 publication Critical patent/DE69127317D1/de
Application granted granted Critical
Publication of DE69127317T2 publication Critical patent/DE69127317T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69127317T 1990-05-25 1991-05-24 Halbleiterspeicherschaltung Expired - Fee Related DE69127317T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2136223A JPH0430388A (ja) 1990-05-25 1990-05-25 半導体記憶回路

Publications (2)

Publication Number Publication Date
DE69127317D1 DE69127317D1 (de) 1997-09-25
DE69127317T2 true DE69127317T2 (de) 1998-04-02

Family

ID=15170175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127317T Expired - Fee Related DE69127317T2 (de) 1990-05-25 1991-05-24 Halbleiterspeicherschaltung

Country Status (5)

Country Link
US (1) US5278799A (de)
EP (1) EP0458351B1 (de)
JP (1) JPH0430388A (de)
KR (1) KR910020729A (de)
DE (1) DE69127317T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04353692A (ja) * 1991-05-30 1992-12-08 Sanyo Electric Co Ltd メモリセルの書き込み方法
US5280452A (en) * 1991-07-12 1994-01-18 International Business Machines Corporation Power saving semsing circuits for dynamic random access memory
US5737711A (en) * 1994-11-09 1998-04-07 Fuji Jukogyo Kabuishiki Kaisha Diagnosis system for motor vehicle
US5640114A (en) * 1995-12-27 1997-06-17 Vlsi Technology, Inc. Versatile select and hold scan flip-flop
JP2000132969A (ja) 1998-10-28 2000-05-12 Nec Corp ダイナミックメモリ装置
WO2001057875A1 (fr) 2000-02-04 2001-08-09 Hitachi, Ltd. Dispositif semi-conducteur
KR100368133B1 (ko) * 2000-03-28 2003-01-15 한국과학기술원 메모리 셀 정보 저장 방법
JP4934897B2 (ja) * 2001-01-12 2012-05-23 ソニー株式会社 メモリ装置
WO2007110933A1 (ja) * 2006-03-28 2007-10-04 Fujitsu Limited 半導体メモリおよびシステム
JP4996422B2 (ja) * 2007-11-05 2012-08-08 ルネサスエレクトロニクス株式会社 半導体装置
US8116157B2 (en) * 2007-11-20 2012-02-14 Qimonda Ag Integrated circuit
US8462573B2 (en) * 2010-06-10 2013-06-11 Mosaid Technolgies Incorporated Semiconductor memory device with sense amplifier and bitline isolation
US8451675B2 (en) 2011-03-31 2013-05-28 Mosys, Inc. Methods for accessing DRAM cells using separate bit line control
US8681574B2 (en) * 2011-03-31 2014-03-25 Mosys, Inc. Separate pass gate controlled sense amplifier
KR20130055992A (ko) * 2011-11-21 2013-05-29 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이를 이용한 반도체 집적 회로

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5836504B2 (ja) * 1980-02-22 1983-08-09 富士通株式会社 半導体記憶装置
JPS5856287A (ja) * 1981-09-29 1983-04-02 Nec Corp 半導体回路
JPS60206161A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体集積回路
JPS6180597A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置
US4800525A (en) * 1984-10-31 1989-01-24 Texas Instruments Incorporated Dual ended folded bit line arrangement and addressing scheme
JPH0652632B2 (ja) * 1985-01-23 1994-07-06 株式会社日立製作所 ダイナミツク型ｒａｍ
JPH0785354B2 (ja) * 1985-05-08 1995-09-13 日本電気株式会社 半導体メモリ
JPS6280897A (ja) * 1985-10-04 1987-04-14 Mitsubishi Electric Corp 半導体記憶装置
US4710902A (en) * 1985-10-04 1987-12-01 Motorola, Inc. Technique restore for a dynamic random access memory
DE3884859T2 (de) * 1987-06-04 1994-02-03 Nec Corp Dynamische Speicherschaltung mit einem Abfühlschema.
JPS6457495A (en) * 1987-08-28 1989-03-03 Hitachi Ltd Semiconductor memory device
DE3850483T2 (de) * 1987-12-21 1994-10-20 Toshiba Kawasaki Kk Halbleiterspeicher, der fähig zur Verbesserung der Datenwiedereinschreibgeschwindigkeit ist.
JPH0229989A (ja) * 1988-07-19 1990-01-31 Mitsubishi Electric Corp ダイナミックランダムアクセスメモリ装置

Also Published As

Publication number Publication date
EP0458351A3 (en) 1994-08-17
KR910020729A (ko) 1991-12-20
EP0458351A2 (de) 1991-11-27
EP0458351B1 (de) 1997-08-20
JPH0430388A (ja) 1992-02-03
DE69127317D1 (de) 1997-09-25
US5278799A (en) 1994-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee