DE69322318T2 - Halbleiterspeicherschaltung - Google Patents

Halbleiterspeicherschaltung

Info

Publication number
DE69322318T2
DE69322318T2 DE69322318T DE69322318T DE69322318T2 DE 69322318 T2 DE69322318 T2 DE 69322318T2 DE 69322318 T DE69322318 T DE 69322318T DE 69322318 T DE69322318 T DE 69322318T DE 69322318 T2 DE69322318 T2 DE 69322318T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory circuit
circuit
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69322318T
Other languages
English (en)
Other versions
DE69322318D1 (de
Inventor
Yoshinori Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15937999&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69322318(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69322318D1 publication Critical patent/DE69322318D1/de
Application granted granted Critical
Publication of DE69322318T2 publication Critical patent/DE69322318T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
DE69322318T 1992-06-30 1993-06-30 Halbleiterspeicherschaltung Expired - Fee Related DE69322318T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17222992 1992-06-30

Publications (2)

Publication Number Publication Date
DE69322318D1 DE69322318D1 (de) 1999-01-14
DE69322318T2 true DE69322318T2 (de) 1999-06-24

Family

ID=15937999

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322318T Expired - Fee Related DE69322318T2 (de) 1992-06-30 1993-06-30 Halbleiterspeicherschaltung

Country Status (4)

Country Link
US (2) US5444305A (de)
EP (1) EP0577106B1 (de)
KR (1) KR970004460B1 (de)
DE (1) DE69322318T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907516A (en) * 1994-07-07 1999-05-25 Hyundai Electronics Industries Co., Ltd. Semiconductor memory device with reduced data bus line load
JP3135795B2 (ja) 1994-09-22 2001-02-19 東芝マイクロエレクトロニクス株式会社 ダイナミック型メモリ
JP3267462B2 (ja) * 1995-01-05 2002-03-18 株式会社東芝 半導体記憶装置
US5812478A (en) * 1995-01-05 1998-09-22 Kabushiki Kaisha Toshiba Semiconductor memory having improved data bus arrangement
JPH0973778A (ja) * 1995-09-01 1997-03-18 Texas Instr Japan Ltd アドレスアクセスパスのコントロール回路
US5706292A (en) * 1996-04-25 1998-01-06 Micron Technology, Inc. Layout for a semiconductor memory device having redundant elements
US5757710A (en) * 1996-12-03 1998-05-26 Mosel Vitelic Corporation DRAM with edge sense amplifiers which are activated along with sense amplifiers internal to the array during a read cycle
US6134172A (en) * 1996-12-26 2000-10-17 Rambus Inc. Apparatus for sharing sense amplifiers between memory banks
US6075743A (en) * 1996-12-26 2000-06-13 Rambus Inc. Method and apparatus for sharing sense amplifiers between memory banks
US6172935B1 (en) 1997-04-25 2001-01-09 Micron Technology, Inc. Synchronous dynamic random access memory device
EP2102393A4 (de) * 2006-11-15 2011-01-05 Univ British Columbia Für platin-koordinationskomplex-induzierte ototoxizität prädiktive polymorphismen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
US4807194A (en) * 1986-04-24 1989-02-21 Matsushita Electric Industrial Co., Ltd. Seimiconductor memory device having sub bit lines
DE3937068C2 (de) * 1988-11-07 1994-10-06 Toshiba Kawasaki Kk Dynamische Halbleiterspeicheranordnung
JPH0814985B2 (ja) * 1989-06-06 1996-02-14 富士通株式会社 半導体記憶装置
JPH04186593A (ja) * 1990-11-21 1992-07-03 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
KR940006264A (ko) 1994-03-23
EP0577106A3 (en) 1994-06-01
EP0577106A2 (de) 1994-01-05
USRE36203E (en) 1999-04-27
US5444305A (en) 1995-08-22
EP0577106B1 (de) 1998-12-02
KR970004460B1 (ko) 1997-03-27
DE69322318D1 (de) 1999-01-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee