KR940001895U - 반도체 메모리회로 - Google Patents
반도체 메모리회로Info
- Publication number
- KR940001895U KR940001895U KR2019920010418U KR920010418U KR940001895U KR 940001895 U KR940001895 U KR 940001895U KR 2019920010418 U KR2019920010418 U KR 2019920010418U KR 920010418 U KR920010418 U KR 920010418U KR 940001895 U KR940001895 U KR 940001895U
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- memory circuit
- circuit
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92010418U KR950003388Y1 (ko) | 1992-06-12 | 1992-06-12 | 반도체 메모리회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92010418U KR950003388Y1 (ko) | 1992-06-12 | 1992-06-12 | 반도체 메모리회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940001895U true KR940001895U (ko) | 1994-01-03 |
KR950003388Y1 KR950003388Y1 (ko) | 1995-04-27 |
Family
ID=19334744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR92010418U KR950003388Y1 (ko) | 1992-06-12 | 1992-06-12 | 반도체 메모리회로 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950003388Y1 (ko) |
-
1992
- 1992-06-12 KR KR92010418U patent/KR950003388Y1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950003388Y1 (ko) | 1995-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69327499D1 (de) | Halbleiterspeicher | |
DE69406074D1 (de) | Integrierte Halbleiterspeicherschaltung | |
DE69024773D1 (de) | Halbleiterspeicherschaltungsanordnung | |
KR890015268A (ko) | 반도체 기억회로 | |
DE69225537T2 (de) | Integrierte Speicherschaltung | |
DE69327357D1 (de) | Integrierte Halbleiterschaltungsanordnung | |
DE69221218D1 (de) | Halbleiterspeicher | |
DE69216695D1 (de) | Halbleiterspeicher | |
DE69322311T2 (de) | Halbleiterspeicheranordnung | |
DE69322747D1 (de) | Halbleiterspeicheranordnung | |
DE69322725D1 (de) | Halbleiterspeicheranordnung | |
DE69123409D1 (de) | Halbleiterspeicherschaltung | |
DE69317944T2 (de) | Integrierte Speicherschaltung | |
DE69127317D1 (de) | Halbleiterspeicherschaltung | |
DE69322436T2 (de) | Halbleiterspeicheranordnung | |
DE69119617D1 (de) | Halbleiterspeicherschaltung | |
DE69322318D1 (de) | Halbleiterspeicherschaltung | |
DE69224559D1 (de) | Halbleiterspeicher | |
DE69305421D1 (de) | Halbleiterschaltung | |
DE69119636D1 (de) | Halbleiterspeicherschaltung | |
DE69327125D1 (de) | Halbleiterspeicher | |
DE69221192D1 (de) | Halbleiterspeicherschaltung | |
DE69331210D1 (de) | Integriertes Speicherschaltungsgerät | |
DE69321544T2 (de) | Halbleiterspeicheranordnung | |
KR940003042A (ko) | 반도체 기억장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20060320 Year of fee payment: 12 |
|
EXPY | Expiration of term |