DE69317944T2 - Integrierte Speicherschaltung - Google Patents

Integrierte Speicherschaltung

Info

Publication number
DE69317944T2
DE69317944T2 DE69317944T DE69317944T DE69317944T2 DE 69317944 T2 DE69317944 T2 DE 69317944T2 DE 69317944 T DE69317944 T DE 69317944T DE 69317944 T DE69317944 T DE 69317944T DE 69317944 T2 DE69317944 T2 DE 69317944T2
Authority
DE
Germany
Prior art keywords
memory circuit
integrated memory
integrated
circuit
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317944T
Other languages
English (en)
Other versions
DE69317944D1 (de
Inventor
Mark D Bader
Ray Chang
Karl L Wang
Kenneth W Jones
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69317944D1 publication Critical patent/DE69317944D1/de
Application granted granted Critical
Publication of DE69317944T2 publication Critical patent/DE69317944T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
DE69317944T 1992-07-06 1993-06-01 Integrierte Speicherschaltung Expired - Fee Related DE69317944T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/909,485 US5268863A (en) 1992-07-06 1992-07-06 Memory having a write enable controlled word line

Publications (2)

Publication Number Publication Date
DE69317944D1 DE69317944D1 (de) 1998-05-20
DE69317944T2 true DE69317944T2 (de) 1998-10-08

Family

ID=25427302

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317944T Expired - Fee Related DE69317944T2 (de) 1992-07-06 1993-06-01 Integrierte Speicherschaltung

Country Status (6)

Country Link
US (1) US5268863A (de)
EP (1) EP0577967B1 (de)
JP (1) JPH06103777A (de)
KR (1) KR100284371B1 (de)
DE (1) DE69317944T2 (de)
SG (1) SG44560A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716912B2 (ja) * 1992-07-23 1998-02-18 株式会社東芝 半導体記憶装置
JP2812097B2 (ja) * 1992-09-30 1998-10-15 日本電気株式会社 半導体記憶装置
US5860129A (en) * 1995-09-27 1999-01-12 Motorola, Inc. Data processing system for writing an external device and method therefor
KR0184464B1 (ko) * 1995-11-28 1999-05-15 김광호 동기형 반도체 메모리장치의 디코딩 회로
KR100214499B1 (ko) * 1996-08-03 1999-08-02 구본준 반도체 메모리의 라이트 제어 회로
US5883841A (en) * 1997-09-26 1999-03-16 Advanced Micro Devices, Inc. Selective bit line recovery in a memory array
US5828612A (en) * 1997-10-27 1998-10-27 Motorola, Inc. Method and circuit for controlling a precharge cycle of a memory device
KR100281900B1 (ko) * 1998-09-08 2001-02-15 윤종용 개선된 웨이퍼 번인 테스트 스킴을 갖는 반도체 메모리장치
US6088289A (en) 1999-09-27 2000-07-11 Cypress Semiconductor Corp. Circuit and method for controlling a wordline and/or stabilizing a memory cell
JP2001307487A (ja) * 2000-02-14 2001-11-02 Mitsubishi Electric Corp 半導体装置
KR100463606B1 (ko) * 2002-01-29 2004-12-29 주식회사 하이닉스반도체 강유전체 메모리의 구동 장치 및 방법
WO2005008672A2 (en) * 2003-07-14 2005-01-27 Fulcrum Microsystems, Inc. Asynchronous static random access memory
US8072834B2 (en) 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
KR100784865B1 (ko) * 2006-12-12 2007-12-14 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것을 포함한 메모리 시스템
KR100895400B1 (ko) * 2007-12-03 2009-05-06 주식회사 하이닉스반도체 상 변화 메모리 장치
US9123414B2 (en) * 2013-11-22 2015-09-01 Micron Technology, Inc. Memory systems and memory programming methods
US9336875B2 (en) 2013-12-16 2016-05-10 Micron Technology, Inc. Memory systems and memory programming methods
US9269432B2 (en) * 2014-01-09 2016-02-23 Micron Technology, Inc. Memory systems and memory programming methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963091A (ja) * 1982-09-30 1984-04-10 Fujitsu Ltd スタテイツクメモリ回路
JPH0762958B2 (ja) * 1983-06-03 1995-07-05 株式会社日立製作所 Ｍｏｓ記憶装置
JPS60253093A (ja) * 1984-05-30 1985-12-13 Fujitsu Ltd 半導体記憶装置
US4878198A (en) * 1988-01-25 1989-10-31 Visic, Incorporated Static ram with common data line equalization
US4916670A (en) * 1988-02-02 1990-04-10 Fujitsu Limited Semiconductor memory device having function of generating write signal internally
JPH0276197A (ja) * 1988-09-13 1990-03-15 Toshiba Corp 半導体記憶装置
US4975877A (en) * 1988-10-20 1990-12-04 Logic Devices Incorporated Static semiconductor memory with improved write recovery and column address circuitry
US4926387A (en) * 1988-12-27 1990-05-15 Intel Corporation Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells
US5018111A (en) * 1988-12-27 1991-05-21 Intel Corporation Timing circuit for memory employing reset function
US5146427A (en) * 1989-08-30 1992-09-08 Hitachi Ltd. High speed semiconductor memory having a direct-bypass signal path
JPH03278389A (ja) * 1990-03-27 1991-12-10 Nec Corp 読み書き制御回路

Also Published As

Publication number Publication date
DE69317944D1 (de) 1998-05-20
JPH06103777A (ja) 1994-04-15
US5268863A (en) 1993-12-07
EP0577967A3 (de) 1995-05-10
KR100284371B1 (ko) 2001-03-02
EP0577967A2 (de) 1994-01-12
EP0577967B1 (de) 1998-04-15
KR940001155A (ko) 1994-01-10
SG44560A1 (en) 1997-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee