IT1243102B - Dispositivo a semiconduttore e relativo metodo di fabbricazione. - Google Patents
Dispositivo a semiconduttore e relativo metodo di fabbricazione.Info
- Publication number
- IT1243102B IT1243102B IT02151690A IT2151690A IT1243102B IT 1243102 B IT1243102 B IT 1243102B IT 02151690 A IT02151690 A IT 02151690A IT 2151690 A IT2151690 A IT 2151690A IT 1243102 B IT1243102 B IT 1243102B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- related manufacturing
- manufacturing
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900010587A KR930006144B1 (ko) | 1990-07-12 | 1990-07-12 | 반도체 장치 및 방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
IT9021516A0 IT9021516A0 (it) | 1990-09-19 |
IT9021516A1 IT9021516A1 (it) | 1992-03-19 |
IT1243102B true IT1243102B (it) | 1994-05-24 |
Family
ID=19301186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT02151690A IT1243102B (it) | 1990-07-12 | 1990-09-19 | Dispositivo a semiconduttore e relativo metodo di fabbricazione. |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0472757A (it) |
KR (1) | KR930006144B1 (it) |
DE (1) | DE4029070A1 (it) |
FR (1) | FR2664742A1 (it) |
GB (1) | GB2246014A (it) |
IT (1) | IT1243102B (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112017007961B1 (pt) * | 2014-10-31 | 2021-12-28 | Dow Global Technologies Llc | Processo de separação |
KR102482504B1 (ko) * | 2018-04-23 | 2022-12-30 | 주식회사 엘지화학 | t-부틸 메타크릴레이트의 제조방법 |
US11031404B2 (en) * | 2018-11-26 | 2021-06-08 | Etron Technology, Inc. | Dynamic memory structure with a shared counter electrode |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0164829B1 (en) * | 1984-04-19 | 1988-09-28 | Nippon Telegraph And Telephone Corporation | Semiconductor memory device and method of manufacturing the same |
JPS6187358A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体記憶装置およびその製造方法 |
JPS61258468A (ja) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
JPS627153A (ja) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | 半導体メモリ |
JPS627152A (ja) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | 半導体メモリ |
JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
EP0236089B1 (en) * | 1986-03-03 | 1992-08-05 | Fujitsu Limited | Dynamic random access memory having trench capacitor |
JPS6384149A (ja) * | 1986-09-29 | 1988-04-14 | Hitachi Ltd | 半導体メモリの製造方法 |
GB2199695B (en) * | 1987-01-06 | 1990-07-25 | Samsung Semiconductor Inc | Dynamic random access memory with selective well biasing |
JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
DE3916228C2 (de) * | 1988-05-18 | 1995-06-22 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung mit Stapelkondensatorzellenstruktur und Verfahren zu ihrer Herstellung |
-
1990
- 1990-07-12 KR KR1019900010587A patent/KR930006144B1/ko not_active IP Right Cessation
- 1990-09-13 DE DE4029070A patent/DE4029070A1/de active Granted
- 1990-09-19 GB GB9020480A patent/GB2246014A/en not_active Withdrawn
- 1990-09-19 IT IT02151690A patent/IT1243102B/it active IP Right Grant
- 1990-09-20 JP JP2254054A patent/JPH0472757A/ja active Pending
- 1990-09-20 FR FR9011623A patent/FR2664742A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2246014A (en) | 1992-01-15 |
JPH0472757A (ja) | 1992-03-06 |
DE4029070C2 (it) | 1992-07-16 |
IT9021516A1 (it) | 1992-03-19 |
KR920003557A (ko) | 1992-02-29 |
IT9021516A0 (it) | 1990-09-19 |
GB9020480D0 (en) | 1990-10-31 |
DE4029070A1 (de) | 1992-01-23 |
KR930006144B1 (ko) | 1993-07-07 |
FR2664742A1 (fr) | 1992-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |