Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
  • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
  • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
  • H01L29/92—Capacitors having potential barriers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/03—Making the capacitor or connections thereto
  • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• Semiconductor Memories (AREA)
• Semiconductor Integrated Circuits (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
• Thin Film Transistor (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=19301186

Family Applications (1)

Country Status (6)

Cited By (1)

Families Citing this family (2)

Family Cites Families (11)

• 1990
  • 1990-07-12 KR KR1019900010587A patent/KR930006144B1/en not_active IP Right Cessation
  • 1990-09-13 DE DE4029070A patent/DE4029070A1/en active Granted
  • 1990-09-19 IT IT02151690A patent/IT1243102B/en active IP Right Grant
  • 1990-09-19 GB GB9020480A patent/GB2246014A/en not_active Withdrawn
  • 1990-09-20 FR FR9011623A patent/FR2664742A1/en not_active Withdrawn
  • 1990-09-20 JP JP2254054A patent/JPH0472757A/en active Pending

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