GB9020480D0 - Semiconductor capacitor device and manufacturing method thereof - Google Patents
Semiconductor capacitor device and manufacturing method thereofInfo
- Publication number
- GB9020480D0 GB9020480D0 GB909020480A GB9020480A GB9020480D0 GB 9020480 D0 GB9020480 D0 GB 9020480D0 GB 909020480 A GB909020480 A GB 909020480A GB 9020480 A GB9020480 A GB 9020480A GB 9020480 D0 GB9020480 D0 GB 9020480D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- capacitor device
- semiconductor capacitor
- semiconductor
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900010587A KR930006144B1 (en) | 1990-07-12 | 1990-07-12 | Semiconductor device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9020480D0 true GB9020480D0 (en) | 1990-10-31 |
GB2246014A GB2246014A (en) | 1992-01-15 |
Family
ID=19301186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9020480A Withdrawn GB2246014A (en) | 1990-07-12 | 1990-09-19 | Capacitors for dram cells |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0472757A (en) |
KR (1) | KR930006144B1 (en) |
DE (1) | DE4029070A1 (en) |
FR (1) | FR2664742A1 (en) |
GB (1) | GB2246014A (en) |
IT (1) | IT1243102B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111223863A (en) * | 2018-11-26 | 2020-06-02 | 钰创科技股份有限公司 | Dynamic random access memory structure |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016069227A1 (en) * | 2014-10-31 | 2016-05-06 | Dow Global Technologies Llc | Separation process |
KR102482504B1 (en) * | 2018-04-23 | 2022-12-30 | 주식회사 엘지화학 | Method for the preparation of t-butyl methacrylate |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3565339D1 (en) * | 1984-04-19 | 1988-11-03 | Nippon Telegraph & Telephone | Semiconductor memory device and method of manufacturing the same |
JPS6187358A (en) * | 1984-10-05 | 1986-05-02 | Nec Corp | Semiconductor memory and manufacture thereof |
JPS61258468A (en) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | Semiconductor memory device and manufacture of the same |
JPS627152A (en) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | Semiconductor memory |
JPS627153A (en) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | Semiconductor memory |
JPS62120070A (en) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | Semiconductor memory |
DE3780840T2 (en) * | 1986-03-03 | 1993-03-25 | Fujitsu Ltd | DYNAMIC MEMORY CONTAINING A GROOVE CAPACITOR WITH OPTIONAL ACCESS. |
JPS6384149A (en) * | 1986-09-29 | 1988-04-14 | Hitachi Ltd | Manufacture of semiconductor memory |
GB2199695B (en) * | 1987-01-06 | 1990-07-25 | Samsung Semiconductor Inc | Dynamic random access memory with selective well biasing |
JPH01101664A (en) * | 1987-10-15 | 1989-04-19 | Nec Corp | Semiconductor integrated circuit device |
KR900019227A (en) * | 1988-05-18 | 1990-12-24 | 아오이 죠이치 | Semiconductor memory device with stacked capacitor and manufacturing method thereof |
-
1990
- 1990-07-12 KR KR1019900010587A patent/KR930006144B1/en not_active IP Right Cessation
- 1990-09-13 DE DE4029070A patent/DE4029070A1/en active Granted
- 1990-09-19 GB GB9020480A patent/GB2246014A/en not_active Withdrawn
- 1990-09-19 IT IT02151690A patent/IT1243102B/en active IP Right Grant
- 1990-09-20 JP JP2254054A patent/JPH0472757A/en active Pending
- 1990-09-20 FR FR9011623A patent/FR2664742A1/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111223863A (en) * | 2018-11-26 | 2020-06-02 | 钰创科技股份有限公司 | Dynamic random access memory structure |
Also Published As
Publication number | Publication date |
---|---|
GB2246014A (en) | 1992-01-15 |
JPH0472757A (en) | 1992-03-06 |
DE4029070A1 (en) | 1992-01-23 |
FR2664742A1 (en) | 1992-01-17 |
IT9021516A0 (en) | 1990-09-19 |
KR930006144B1 (en) | 1993-07-07 |
IT9021516A1 (en) | 1992-03-19 |
IT1243102B (en) | 1994-05-24 |
KR920003557A (en) | 1992-02-29 |
DE4029070C2 (en) | 1992-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB9214440D0 (en) | Semiconductor device and manufacturing method thereof | |
KR960016837B1 (en) | Semiconductor memory device and manufacturing method thereof | |
KR960008517B1 (en) | Semiconductor device and the manufacturing method | |
EP0543361A3 (en) | Semiconductor device and method of manufacturing the same | |
EP0506980A4 (en) | Structure of semiconductor device and manufacturing method thereof | |
GB9023215D0 (en) | Semiconductor device and method of manufacturing the same | |
KR960008893B1 (en) | Semiconductor device and fabricating method thereof | |
EP0442718A3 (en) | Method of manufacturing semiconductor device | |
EP0642167A3 (en) | Semiconductor device having capacitor and manufacturing method thereof. | |
EP0421735A3 (en) | Semiconductor device and method of manufacturing the same | |
EP0345380A3 (en) | Semiconductor device and manufacturing method thereof | |
GB2237931B (en) | Semi-conductor device and manufacturing method thereof | |
KR960009101B1 (en) | Semiconductor device and the manufacturing method having unit circuit-block | |
EP0417787A3 (en) | Multimold semiconductor device and the manufacturing method therefor | |
KR960000962B1 (en) | Semiconductor device and the manufacturing method thereof | |
EP0535694A3 (en) | Semiconductor memory device and method of manufacturing the same | |
EP0488091A3 (en) | Plastic-packaged semiconductor device and method of forming the same | |
EP0450558A3 (en) | Semiconductor device and method of manufacturing the same | |
KR0125092B1 (en) | Mos type semiconductor device and manufacturing method thereof | |
GB9011342D0 (en) | Semiconductor device and manufacturing method thereof | |
GB2238428B (en) | Semiconductor device and manufacturing method thereof | |
EP0437371A3 (en) | Method of manufacturing semiconductor device | |
KR950001757B1 (en) | Semiconductor device and manufacturing method thereof | |
GB9215477D0 (en) | Semiconductor device and manufacturing method therefor | |
HK1013890A1 (en) | Contact for semiconductor device and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |