DE69100963D1 - Herstellungsmethode für eine Halbleiterlaser-Vorrichtung. - Google Patents

Herstellungsmethode für eine Halbleiterlaser-Vorrichtung.

Info

Publication number
DE69100963D1
DE69100963D1 DE91303258T DE69100963T DE69100963D1 DE 69100963 D1 DE69100963 D1 DE 69100963D1 DE 91303258 T DE91303258 T DE 91303258T DE 69100963 T DE69100963 T DE 69100963T DE 69100963 D1 DE69100963 D1 DE 69100963D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE91303258T
Other languages
English (en)
Other versions
DE69100963T2 (de
Inventor
Hiroyuki Hosoba
Akinori Seki
Toshio Hata
Masafumi Kondou
Takahiro Suyama
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69100963D1 publication Critical patent/DE69100963D1/de
Application granted granted Critical
Publication of DE69100963T2 publication Critical patent/DE69100963T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE91303258T 1990-04-13 1991-04-12 Herstellungsmethode für eine Halbleiterlaser-Vorrichtung. Expired - Fee Related DE69100963T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2099012A JP2547464B2 (ja) 1990-04-13 1990-04-13 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE69100963D1 true DE69100963D1 (de) 1994-02-24
DE69100963T2 DE69100963T2 (de) 1994-05-05

Family

ID=14235194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE91303258T Expired - Fee Related DE69100963T2 (de) 1990-04-13 1991-04-12 Herstellungsmethode für eine Halbleiterlaser-Vorrichtung.

Country Status (4)

Country Link
US (1) US5111470A (de)
EP (1) EP0452146B1 (de)
JP (1) JP2547464B2 (de)
DE (1) DE69100963T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175740A (en) * 1991-07-24 1992-12-29 Gte Laboratories Incorporated Semiconductor laser and method of fabricating same
JPH06314841A (ja) * 1993-04-28 1994-11-08 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP3489878B2 (ja) * 1993-10-22 2004-01-26 シャープ株式会社 半導体レーザ素子およびその自励発振強度の調整方法
TW291585B (de) * 1994-07-04 1996-11-21 Mitsubishi Chem Corp
JPH08222815A (ja) * 1994-12-13 1996-08-30 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
JPS603178A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS603181A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPS62169389A (ja) * 1986-01-21 1987-07-25 Sharp Corp 半導体レ−ザアレイ装置
DE3788841T2 (de) * 1986-10-07 1994-05-05 Sharp Kk Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JPH0245993A (ja) * 1988-08-06 1990-02-15 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH0263183A (ja) * 1988-08-29 1990-03-02 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
JPH0279486A (ja) * 1988-09-14 1990-03-20 Sharp Corp 半導体レーザ素子
JPH02202085A (ja) * 1989-01-31 1990-08-10 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
DE69031401T2 (de) * 1989-04-28 1998-03-19 Sharp Kk Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben

Also Published As

Publication number Publication date
JPH03296290A (ja) 1991-12-26
US5111470A (en) 1992-05-05
EP0452146A1 (de) 1991-10-16
JP2547464B2 (ja) 1996-10-23
EP0452146B1 (de) 1994-01-12
DE69100963T2 (de) 1994-05-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee