DE69100963T2 - Herstellungsmethode für eine Halbleiterlaser-Vorrichtung. - Google Patents

Herstellungsmethode für eine Halbleiterlaser-Vorrichtung.

Info

Publication number
DE69100963T2
DE69100963T2 DE91303258T DE69100963T DE69100963T2 DE 69100963 T2 DE69100963 T2 DE 69100963T2 DE 91303258 T DE91303258 T DE 91303258T DE 69100963 T DE69100963 T DE 69100963T DE 69100963 T2 DE69100963 T2 DE 69100963T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE91303258T
Other languages
English (en)
Other versions
DE69100963D1 (de
Inventor
Hiroyuki Hosoba
Akinori Seki
Toshio Hata
Masafumi Kondou
Takahiro Suyama
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69100963D1 publication Critical patent/DE69100963D1/de
Publication of DE69100963T2 publication Critical patent/DE69100963T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
DE91303258T 1990-04-13 1991-04-12 Herstellungsmethode für eine Halbleiterlaser-Vorrichtung. Expired - Fee Related DE69100963T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2099012A JP2547464B2 (ja) 1990-04-13 1990-04-13 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE69100963D1 DE69100963D1 (de) 1994-02-24
DE69100963T2 true DE69100963T2 (de) 1994-05-05

Family

ID=14235194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE91303258T Expired - Fee Related DE69100963T2 (de) 1990-04-13 1991-04-12 Herstellungsmethode für eine Halbleiterlaser-Vorrichtung.

Country Status (4)

Country Link
US (1) US5111470A (de)
EP (1) EP0452146B1 (de)
JP (1) JP2547464B2 (de)
DE (1) DE69100963T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175740A (en) * 1991-07-24 1992-12-29 Gte Laboratories Incorporated Semiconductor laser and method of fabricating same
JPH06314841A (ja) * 1993-04-28 1994-11-08 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP3489878B2 (ja) * 1993-10-22 2004-01-26 シャープ株式会社 半導体レーザ素子およびその自励発振強度の調整方法
TW291585B (de) * 1994-07-04 1996-11-21 Mitsubishi Chem Corp
JPH08222815A (ja) * 1994-12-13 1996-08-30 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
JPS603181A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS603178A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPS62169389A (ja) * 1986-01-21 1987-07-25 Sharp Corp 半導体レ−ザアレイ装置
DE3788841T2 (de) * 1986-10-07 1994-05-05 Sharp Kk Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JPH0245993A (ja) * 1988-08-06 1990-02-15 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH0263183A (ja) * 1988-08-29 1990-03-02 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
JPH0279486A (ja) * 1988-09-14 1990-03-20 Sharp Corp 半導体レーザ素子
JPH02202085A (ja) * 1989-01-31 1990-08-10 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
EP0395436B1 (de) * 1989-04-28 1997-09-10 Sharp Kabushiki Kaisha Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben

Also Published As

Publication number Publication date
EP0452146B1 (de) 1994-01-12
EP0452146A1 (de) 1991-10-16
US5111470A (en) 1992-05-05
DE69100963D1 (de) 1994-02-24
JP2547464B2 (ja) 1996-10-23
JPH03296290A (ja) 1991-12-26

Similar Documents

Publication Publication Date Title
DE69518793D1 (de) Herstellungsverfahren für eine Halbleitervorrichtung
DE69015670D1 (de) Herstellungsmethode für Halbleitermembranen.
KR900012368A (ko) 반도체 장치의 제조 방법
DE69009448D1 (de) Halbleiterlaseranordnung.
DE68920571T2 (de) Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung.
DE59102388D1 (de) Herstellungsverfahren für eine flachdichtung.
DE68925219D1 (de) Halbleiterlaser-Vorrichtung und Herstellungsverfahren für die Halbleiterlaser-Vorrichtung
DE69712080T2 (de) Herstellungsverfahren für eine halbleitervorrichtung
DE69018732T2 (de) Halbleiterlaser.
DE69129047D1 (de) Herstellungsverfahren für eine aus Halbleiterverbindungen bestehende Laservorrichtung
DE69009266D1 (de) Halbleiterlaser-Vorrichtung.
DE69005132D1 (de) Halbleiterlaser.
DE69030433T2 (de) Herstellungsmethode für Halbleiterspeicher
KR910005477A (ko) 반도체 장치의 제조방법
DE69021151T2 (de) Halbleiterlaser-Vorrichtung.
DE69200216T2 (de) Herstellungsverfahren für eine optoelektronische Vorrichtung.
DE69100963T2 (de) Herstellungsmethode für eine Halbleiterlaser-Vorrichtung.
KR900015282A (ko) 반도체 소자의 제조방법
DE69125498T2 (de) Halbleiterverrichtungsherstellungsverfahren
DE69019233D1 (de) Halbleiter-Laservorrichtung.
DE69322223D1 (de) Kontaktierungsverfahren für eine Halbleitervorrichtung
DE69025916D1 (de) Herstellungsverfahren für eine halbleitervorrichtung
KR910002006A (ko) 반도체 장치의 제조방법
DE69211608T2 (de) Herstellungsmethode für Halbleiterspeicher
DE69111513D1 (de) Halbleiterherstellungseinrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee