DE69025916D1 - Herstellungsverfahren für eine halbleitervorrichtung - Google Patents
Herstellungsverfahren für eine halbleitervorrichtungInfo
- Publication number
- DE69025916D1 DE69025916D1 DE69025916T DE69025916T DE69025916D1 DE 69025916 D1 DE69025916 D1 DE 69025916D1 DE 69025916 T DE69025916 T DE 69025916T DE 69025916 T DE69025916 T DE 69025916T DE 69025916 D1 DE69025916 D1 DE 69025916D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/163—Thick-thin oxides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8922331A GB2237445B (en) | 1989-10-04 | 1989-10-04 | A semiconductor device fabrication process |
PCT/GB1990/001528 WO1991005365A1 (en) | 1989-10-04 | 1990-10-04 | A semiconductor device fabrication process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69025916D1 true DE69025916D1 (de) | 1996-04-18 |
DE69025916T2 DE69025916T2 (de) | 1996-09-26 |
Family
ID=10664022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69025916T Expired - Fee Related DE69025916T2 (de) | 1989-10-04 | 1990-10-04 | Herstellungsverfahren für eine halbleitervorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5679586A (de) |
EP (1) | EP0447522B1 (de) |
DE (1) | DE69025916T2 (de) |
GB (1) | GB2237445B (de) |
SG (1) | SG72609A1 (de) |
WO (1) | WO1991005365A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017785A (en) * | 1996-08-15 | 2000-01-25 | Integrated Device Technology, Inc. | Method for improving latch-up immunity and interwell isolation in a semiconductor device |
US6001701A (en) * | 1997-06-09 | 1999-12-14 | Lucent Technologies Inc. | Process for making bipolar having graded or modulated collector |
JP3469250B2 (ja) * | 1998-10-08 | 2003-11-25 | 三菱電機株式会社 | 半導体装置及び半導体装置保護回路 |
DE10084495T1 (de) | 1999-04-20 | 2002-06-06 | Seagate Technology Llc | Elektrodenstrukturierung für einen Differential-PZT-Aktuator |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE244607C (de) * | ||||
DE72967C (de) * | TH. HELLER in Berlin S.O., Obmgasse 5 a | Form zur Herstellung von Glasstöpseln für Tropfgläser | ||
US3928081A (en) * | 1973-10-26 | 1975-12-23 | Signetics Corp | Method for fabricating semiconductor devices using composite mask and ion implantation |
US3928082A (en) * | 1973-12-28 | 1975-12-23 | Texas Instruments Inc | Self-aligned transistor process |
US3933528A (en) * | 1974-07-02 | 1976-01-20 | Texas Instruments Incorporated | Process for fabricating integrated circuits utilizing ion implantation |
US4151019A (en) * | 1974-12-27 | 1979-04-24 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
US4018627A (en) * | 1975-09-22 | 1977-04-19 | Signetics Corporation | Method for fabricating semiconductor devices utilizing oxide protective layer |
US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
JPS5413779A (en) * | 1977-07-04 | 1979-02-01 | Toshiba Corp | Semiconductor integrated circuit device |
IT1166587B (it) * | 1979-01-22 | 1987-05-05 | Ates Componenti Elettron | Processo per la fabbricazione di transistori mos complementari ad alta integrazione per tensioni elevate |
US4403395A (en) * | 1979-02-15 | 1983-09-13 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
US4382827A (en) * | 1981-04-27 | 1983-05-10 | Ncr Corporation | Silicon nitride S/D ion implant mask in CMOS device fabrication |
DE3133468A1 (de) * | 1981-08-25 | 1983-03-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie |
JPS5955054A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体装置の製造方法 |
US4577391A (en) * | 1984-07-27 | 1986-03-25 | Monolithic Memories, Inc. | Method of manufacturing CMOS devices |
US4648909A (en) * | 1984-11-28 | 1987-03-10 | Fairchild Semiconductor Corporation | Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits |
US4717678A (en) * | 1986-03-07 | 1988-01-05 | International Business Machines Corporation | Method of forming self-aligned P contact |
JPH0812918B2 (ja) * | 1986-03-28 | 1996-02-07 | 株式会社東芝 | 半導体装置の製造方法 |
US4760033A (en) * | 1986-04-08 | 1988-07-26 | Siemens Aktiengesellschaft | Method for the manufacture of complementary MOS field effect transistors in VLSI technology |
US5141881A (en) * | 1989-04-20 | 1992-08-25 | Sanyo Electric Co., Ltd. | Method for manufacturing a semiconductor integrated circuit |
JPH06101540B2 (ja) * | 1989-05-19 | 1994-12-12 | 三洋電機株式会社 | 半導体集積回路の製造方法 |
-
1989
- 1989-10-04 GB GB8922331A patent/GB2237445B/en not_active Expired - Fee Related
-
1990
- 1990-10-04 DE DE69025916T patent/DE69025916T2/de not_active Expired - Fee Related
- 1990-10-04 SG SG1996001250A patent/SG72609A1/en unknown
- 1990-10-04 EP EP90914752A patent/EP0447522B1/de not_active Expired - Lifetime
- 1990-10-04 WO PCT/GB1990/001528 patent/WO1991005365A1/en active IP Right Grant
-
1993
- 1993-10-14 US US08/138,606 patent/US5679586A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB8922331D0 (en) | 1989-11-22 |
WO1991005365A1 (en) | 1991-04-18 |
EP0447522A1 (de) | 1991-09-25 |
EP0447522B1 (de) | 1996-03-13 |
GB2237445B (en) | 1994-01-12 |
SG72609A1 (en) | 2000-09-19 |
US5679586A (en) | 1997-10-21 |
GB2237445A (en) | 1991-05-01 |
DE69025916T2 (de) | 1996-09-26 |
JPH0732164B1 (de) | 1995-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: DERZEIT KEIN VERTRETER BESTELLT |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: SEAGATE TECHNOLOGY, INC. (N.D.GES.D.STAATES DELAWA |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: SEAGATE TECHNOLOGY LLC, SCOTTS VALLEY, CALIF., US |
|
8339 | Ceased/non-payment of the annual fee |