DE3876287D1 - Halbleiterlaser-vorrichtung und verfahren zu deren herstellung. - Google Patents

Halbleiterlaser-vorrichtung und verfahren zu deren herstellung.

Info

Publication number
DE3876287D1
DE3876287D1 DE8888200686T DE3876287T DE3876287D1 DE 3876287 D1 DE3876287 D1 DE 3876287D1 DE 8888200686 T DE8888200686 T DE 8888200686T DE 3876287 T DE3876287 T DE 3876287T DE 3876287 D1 DE3876287 D1 DE 3876287D1
Authority
DE
Germany
Prior art keywords
production
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888200686T
Other languages
English (en)
Other versions
DE3876287T2 (de
Inventor
Rudolf Paulus Tijburg
Johannes Jacobus Ponjee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3876287D1 publication Critical patent/DE3876287D1/de
Application granted granted Critical
Publication of DE3876287T2 publication Critical patent/DE3876287T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation
DE8888200686T 1987-04-16 1988-04-11 Halbleiterlaser-vorrichtung und verfahren zu deren herstellung. Expired - Fee Related DE3876287T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8700904A NL8700904A (nl) 1987-04-16 1987-04-16 Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan.

Publications (2)

Publication Number Publication Date
DE3876287D1 true DE3876287D1 (de) 1993-01-14
DE3876287T2 DE3876287T2 (de) 1993-06-03

Family

ID=19849870

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888200686T Expired - Fee Related DE3876287T2 (de) 1987-04-16 1988-04-11 Halbleiterlaser-vorrichtung und verfahren zu deren herstellung.

Country Status (6)

Country Link
US (2) US4905245A (de)
EP (1) EP0292029B1 (de)
JP (1) JPH0636458B2 (de)
KR (1) KR880013278A (de)
DE (1) DE3876287T2 (de)
NL (1) NL8700904A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5590144A (en) * 1990-11-07 1996-12-31 Fuji Electric Co., Ltd. Semiconductor laser device
DE69118482T2 (de) * 1990-11-07 1996-08-22 Fuji Electric Co Ltd Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche
US5413956A (en) * 1992-03-04 1995-05-09 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
BE1007661A3 (nl) * 1993-10-18 1995-09-05 Philips Electronics Nv Werkwijze ter vervaardiging van een straling-emitterende halfgeleiderdiode.
JPH0818150A (ja) * 1994-06-29 1996-01-19 Rohm Co Ltd 半導体レーザの製造方法
TW289175B (de) * 1995-04-07 1996-10-21 Mitsubishi Electric Corp
US6044101A (en) * 1995-08-29 2000-03-28 Siemens Aktiengesellschaft Semiconductor laser device
DE19536434C2 (de) * 1995-09-29 2001-11-15 Siemens Ag Verfahren zum Herstellen eines Halbleiterlaser-Bauelements
JPH09129976A (ja) * 1995-11-01 1997-05-16 Oki Electric Ind Co Ltd 半導体レーザの端面パッシベーション方法
US5799028A (en) * 1996-07-18 1998-08-25 Sdl, Inc. Passivation and protection of a semiconductor surface
US6744796B1 (en) * 2000-03-30 2004-06-01 Triquint Technology Holding Co. Passivated optical device and method of forming the same
DE102014102360A1 (de) * 2014-02-24 2015-08-27 Osram Opto Semiconductors Gmbh Laserdiodenchip

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3517198A (en) * 1966-12-01 1970-06-23 Gen Electric Light emitting and absorbing devices
US4046457A (en) * 1973-12-26 1977-09-06 Polaroid Corporation Polymeric film base carrying fluoropolymer anti-reflection coating
US4047804A (en) * 1973-12-26 1977-09-13 Polaroid Corporation Anti-reflection coatings for photographic bases
US4051163A (en) * 1975-07-21 1977-09-27 Abe Berger Polyimide containing silicones
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
US4560634A (en) * 1981-05-29 1985-12-24 Tokyo Shibaura Denki Kabushiki Kaisha Electrophotographic photosensitive member using microcrystalline silicon
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
US4563368A (en) * 1983-02-14 1986-01-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
US4796981A (en) * 1983-11-26 1989-01-10 Canon Kabushiki Kaisha Optical element for modulation of light by heating a monomolecular film
US4612211A (en) * 1983-12-20 1986-09-16 Rca Corporation Selective semiconductor coating and protective mask therefor
JPS60149183A (ja) * 1984-01-17 1985-08-06 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
CA1267716A (en) * 1984-02-23 1990-04-10 Frederick W. Scholl Edge-emitting light emitting diode
EP0181941B1 (de) * 1984-05-07 1990-01-24 TDK Corporation Optisches speichermedium
US4564562A (en) * 1984-05-29 1986-01-14 At&T Technologies, Inc. Silicone encapsulated devices
JPS61207091A (ja) * 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子
US4932859A (en) * 1985-05-31 1990-06-12 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor having doped and/or bilayer amorphous silicon photosensitive layer
EP0241032A3 (de) * 1986-04-09 1989-11-23 Minolta Camera Kabushiki Kaisha Lichtempfindliches Element, zusammengesetzt aus einer Ladungsträgerschicht und einer ladungserzeugenden Schicht
EP0247599B1 (de) * 1986-05-29 1993-08-04 Sumitomo Chemical Company, Limited Nicht-reflektierende Scheibe für eine Anzeigeeinheit
EP0261653A3 (de) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Lichtempfindliches Element mit ladungserzeugender Schicht und Ladungstransportschicht
JPH0828549B2 (ja) * 1988-01-18 1996-03-21 富士通株式会社 半導体装置の製造方法
JPH01248682A (ja) * 1988-03-30 1989-10-04 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US4985370A (en) 1991-01-15
JPH0636458B2 (ja) 1994-05-11
JPS63280486A (ja) 1988-11-17
NL8700904A (nl) 1988-11-16
US4905245A (en) 1990-02-27
KR880013278A (ko) 1988-11-30
EP0292029A1 (de) 1988-11-23
EP0292029B1 (de) 1992-12-02
DE3876287T2 (de) 1993-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee