IL141803A0 - Photoresists, polymers and processes for microlithography - Google Patents
Photoresists, polymers and processes for microlithographyInfo
- Publication number
- IL141803A0 IL141803A0 IL14180399A IL14180399A IL141803A0 IL 141803 A0 IL141803 A0 IL 141803A0 IL 14180399 A IL14180399 A IL 14180399A IL 14180399 A IL14180399 A IL 14180399A IL 141803 A0 IL141803 A0 IL 141803A0
- Authority
- IL
- Israel
- Prior art keywords
- microlithography
- photoresists
- polymers
- processes
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10150298P | 1998-09-23 | 1998-09-23 | |
US12004599P | 1999-02-12 | 1999-02-12 | |
PCT/US1999/021912 WO2000017712A1 (en) | 1998-09-23 | 1999-09-21 | Photoresists, polymers and processes for microlithography |
Publications (1)
Publication Number | Publication Date |
---|---|
IL141803A0 true IL141803A0 (en) | 2002-03-10 |
Family
ID=26798325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14180399A IL141803A0 (en) | 1998-09-23 | 1999-09-21 | Photoresists, polymers and processes for microlithography |
Country Status (10)
Country | Link |
---|---|
US (2) | US6593058B1 (zh) |
EP (1) | EP1131677B1 (zh) |
JP (2) | JP4327360B2 (zh) |
CN (1) | CN1253759C (zh) |
AU (1) | AU6056099A (zh) |
DE (1) | DE69926532T2 (zh) |
HK (1) | HK1041055A1 (zh) |
IL (1) | IL141803A0 (zh) |
TW (1) | TWI221944B (zh) |
WO (1) | WO2000017712A1 (zh) |
Families Citing this family (157)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL141803A0 (en) * | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
US6849377B2 (en) * | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
US6673523B2 (en) | 1999-03-09 | 2004-01-06 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
DE60013270T2 (de) * | 1999-05-04 | 2005-09-22 | E.I. Du Pont De Nemours And Co., Wilmington | Polyfluorierte epoxide und assozierte polymere und verfahren |
US6790587B1 (en) | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
EP1183571B1 (en) * | 1999-05-04 | 2010-06-02 | E.I. Du Pont De Nemours And Company | Fluorinated photoresists and processes for microlithography |
US6468712B1 (en) * | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
JP4923376B2 (ja) * | 2000-04-04 | 2012-04-25 | ダイキン工業株式会社 | 酸反応性基を有する新規なフッ素ポリマーおよびそれを用いた化学増幅型フォトレジスト組成物 |
JP2003532932A (ja) * | 2000-05-05 | 2003-11-05 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | マイクロリソグラフィのフォトレジスト組成物に用いられるポリマー |
US6951705B2 (en) | 2000-05-05 | 2005-10-04 | E. I. Du Pont De Nemours And Company | Polymers for photoresist compositions for microlithography |
WO2001085811A2 (en) * | 2000-05-05 | 2001-11-15 | E.I. Du Pont De Nemours And Company | Copolymers for photoresists and processes therefor |
SG100729A1 (en) * | 2000-06-16 | 2003-12-26 | Jsr Corp | Radiation-sensitive resin composition |
EP1302813A4 (en) * | 2000-06-21 | 2005-02-23 | Asahi Glass Co Ltd | RESIST COMPOSITION |
US7132214B2 (en) | 2000-09-08 | 2006-11-07 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
WO2002021213A2 (en) * | 2000-09-08 | 2002-03-14 | Shipley Company, L.L.C. | Novel polymers and photoresist compositions for short wavelength imaging |
WO2002021212A2 (en) * | 2000-09-08 | 2002-03-14 | Shipley Company, L.L.C. | Fluorinated phenolic polymers and photoresist compositions comprising same |
JP2004523774A (ja) | 2000-10-13 | 2004-08-05 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | マイクロリソグラフィー用フォトレジスト組成物における溶解抑制剤 |
US6974657B2 (en) | 2000-10-18 | 2005-12-13 | E. I. Du Pont De Nemours And Company | Compositions for microlithography |
EP1326903A2 (en) * | 2000-10-18 | 2003-07-16 | E. I. du Pont de Nemours and Company | Compositions for microlithography |
JP4034538B2 (ja) * | 2000-10-31 | 2008-01-16 | 株式会社東芝 | フォトレジスト用高分子化合物、単量体化合物、感光性樹脂組成物、これを用いたパターン形成方法、および電子部品の製造方法 |
KR100845394B1 (ko) * | 2000-10-31 | 2008-07-09 | 다이셀 가가꾸 고교 가부시끼가이샤 | 전자 흡인성기 함유 단량체 및 그의 제조법 |
CN1575438A (zh) * | 2000-11-09 | 2005-02-02 | 纳幕尔杜邦公司 | 微石印术用光刻胶组合物中的光酸产生剂 |
WO2002044814A2 (en) * | 2000-11-29 | 2002-06-06 | E. I. Du Pont De Nemours And Company | Photoresist compositions comprising bases and surfactants for microlithography |
KR20040012689A (ko) * | 2000-11-29 | 2004-02-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 포토레지스트 조성물을 함유하는 다층 엘레멘트 및 이들의미세석판인쇄에서의 용도 |
US7045268B2 (en) | 2000-11-29 | 2006-05-16 | E.I. Du Pont De Nemours And Company | Polymers blends and their use in photoresist compositions for microlithography |
JP2004537059A (ja) * | 2000-11-29 | 2004-12-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | マイクロリソグラフィ用反射防止層 |
US6730452B2 (en) * | 2001-01-26 | 2004-05-04 | International Business Machines Corporation | Lithographic photoresist composition and process for its use |
WO2002065212A1 (fr) * | 2001-02-09 | 2002-08-22 | Asahi Glass Company, Limited | Composition de reserve |
JP4821068B2 (ja) * | 2001-02-22 | 2011-11-24 | 大日本印刷株式会社 | 体積型ホログラム記録用感光性組成物及び体積型ホログラム記録用感光性媒体 |
US6794109B2 (en) | 2001-02-23 | 2004-09-21 | Massachusetts Institute Of Technology | Low abosorbing resists for 157 nm lithography |
US6787286B2 (en) | 2001-03-08 | 2004-09-07 | Shipley Company, L.L.C. | Solvents and photoresist compositions for short wavelength imaging |
CN100378578C (zh) * | 2001-03-22 | 2008-04-02 | 希普雷公司 | 短波成像用溶剂和光刻胶组合物 |
AU2002254232A1 (en) | 2001-03-22 | 2002-10-08 | Shipley Company, L.L.C. | Photoresist composition |
EP1246013A3 (en) * | 2001-03-30 | 2003-11-19 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
JP4236935B2 (ja) * | 2001-04-27 | 2009-03-11 | 三井化学株式会社 | フッ素含有環状オレフィンポリマー、その環状オレフィン系単量体、ポリマーの製造方法およびその用途 |
US6936398B2 (en) * | 2001-05-09 | 2005-08-30 | Massachusetts Institute Of Technology | Resist with reduced line edge roughness |
US6686429B2 (en) | 2001-05-11 | 2004-02-03 | Clariant Finance (Bvi) Limited | Polymer suitable for photoresist compositions |
US6737215B2 (en) | 2001-05-11 | 2004-05-18 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep ultraviolet lithography |
JP4137408B2 (ja) | 2001-05-31 | 2008-08-20 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US6958123B2 (en) | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
KR100863984B1 (ko) | 2001-07-03 | 2008-10-16 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
KR20040030799A (ko) * | 2001-07-12 | 2004-04-09 | 가부시끼가이샤 한도따이 센단 테크놀로지스 | 미세 패턴 형성 방법 |
JP4155771B2 (ja) * | 2001-08-27 | 2008-09-24 | 大日本印刷株式会社 | 体積型ホログラム記録用感光性組成物及びそれを用いた体積型ホログラム記録用感光性媒体 |
KR20040049317A (ko) * | 2001-10-03 | 2004-06-11 | 가부시끼가이샤 한도따이 센단 테크놀로지스 | 미세 패턴 형성 방법 |
EP1302441B1 (en) * | 2001-10-10 | 2007-01-03 | Rohm And Haas Company | An improved method for making lithium borohydride |
US20040106062A1 (en) * | 2001-10-31 | 2004-06-03 | Petrov Viacheslav Alexandrovich | Photoacid generators in photoresist compositions for microlithography |
US6723488B2 (en) | 2001-11-07 | 2004-04-20 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep UV radiation containing an additive |
JP2003160612A (ja) * | 2001-11-26 | 2003-06-03 | Daicel Chem Ind Ltd | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
US7205086B2 (en) * | 2001-11-26 | 2007-04-17 | E. I. Du Pont De Nemours And Company | Multilayer elements containing photoresist compositions and their use in microlithography |
US7335454B2 (en) | 2001-12-13 | 2008-02-26 | Fujifilm Corporation | Positive resist composition |
US6800416B2 (en) * | 2002-01-09 | 2004-10-05 | Clariant Finance (Bvi) Ltd. | Negative deep ultraviolet photoresist |
TWI314250B (en) * | 2002-02-19 | 2009-09-01 | Sumitomo Chemical Co | Positive resist composition |
US7108951B2 (en) | 2002-02-26 | 2006-09-19 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
JP3841400B2 (ja) | 2002-02-26 | 2006-11-01 | 富士写真フイルム株式会社 | ポジ型レジスト組成物 |
CN1639640A (zh) * | 2002-03-01 | 2005-07-13 | E·I·内穆尔杜邦公司 | 用于显微平版印刷的氟化共聚物 |
TW200403522A (en) * | 2002-03-01 | 2004-03-01 | Shipley Co Llc | Photoresist compositions |
TW200401164A (en) * | 2002-03-01 | 2004-01-16 | Shipley Co Llc | Photoresist compositions |
JP4010160B2 (ja) * | 2002-03-04 | 2007-11-21 | 旭硝子株式会社 | レジスト組成物 |
US7160666B2 (en) | 2002-03-06 | 2007-01-09 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
TWI299816B (en) * | 2002-04-03 | 2008-08-11 | Sumitomo Chemical Co | Positive resist composition |
JP4007581B2 (ja) | 2002-04-19 | 2007-11-14 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
KR100955006B1 (ko) | 2002-04-26 | 2010-04-27 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
US7727777B2 (en) * | 2002-05-31 | 2010-06-01 | Ebrahim Andideh | Forming ferroelectric polymer memories |
US6939662B2 (en) | 2002-05-31 | 2005-09-06 | Fuji Photo Film Co., Ltd. | Positive-working resist composition |
TWI284779B (en) | 2002-06-07 | 2007-08-01 | Fujifilm Corp | Photosensitive resin composition |
KR100584810B1 (ko) * | 2002-06-11 | 2006-05-30 | 주식회사 이엔에프테크놀로지 | 비닐 알킬(1-아다만틸) 에테르 및 그 제조방법 |
US20030235775A1 (en) | 2002-06-13 | 2003-12-25 | Munirathna Padmanaban | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds |
JP3986911B2 (ja) | 2002-07-15 | 2007-10-03 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
WO2004014964A2 (en) * | 2002-08-09 | 2004-02-19 | E. I. Du Pont De Nemours And Company | PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY |
EP1539690A4 (en) * | 2002-08-09 | 2007-01-24 | Du Pont | FLUORINATED MONOMERS, FLUORATED POLYMERS WITH POLYCYCLIC GROUPS WITH ANNELATED 4-LOW HETEROCYCLIC RINGS SUITABLE FOR USE AS PHOTORESISTS, AND MICROLITHOGRAPHIC PROCESSES |
US6830871B2 (en) | 2002-08-19 | 2004-12-14 | Fuji Photo Film Co., Ltd. | Chemical amplification type resist composition |
US7312287B2 (en) * | 2002-08-19 | 2007-12-25 | E.I. Du Pont De Nemours And Company | Fluorinated polymers useful as photoresists, and processes for microlithography |
JPWO2004041877A1 (ja) * | 2002-11-07 | 2006-03-09 | 旭硝子株式会社 | 含フッ素ポリマー |
US7264913B2 (en) | 2002-11-21 | 2007-09-04 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US6790914B2 (en) * | 2002-11-29 | 2004-09-14 | Jsr Corporation | Resin film and applications thereof |
US6919160B2 (en) | 2003-02-20 | 2005-07-19 | Air Products And Chemicals, Inc. | Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same |
US20040166434A1 (en) | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
JP4166598B2 (ja) | 2003-03-12 | 2008-10-15 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4115309B2 (ja) | 2003-03-24 | 2008-07-09 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US7700257B2 (en) | 2003-03-28 | 2010-04-20 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist composition and resist pattern formation method by the use thereof |
US7150957B2 (en) * | 2003-04-25 | 2006-12-19 | International Business Machines Corporation | Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions |
JP4530751B2 (ja) * | 2003-07-24 | 2010-08-25 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
EP1505439A3 (en) | 2003-07-24 | 2005-04-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and method of forming resist pattern |
JP2005049695A (ja) | 2003-07-30 | 2005-02-24 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2005060664A (ja) | 2003-07-31 | 2005-03-10 | Asahi Glass Co Ltd | 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物 |
US7138550B2 (en) | 2003-08-04 | 2006-11-21 | Air Products And Chemicals, Inc. | Bridged carbocyclic compounds and methods of making and using same |
WO2005033752A1 (ja) * | 2003-10-06 | 2005-04-14 | Dai Nippon Printing Co., Ltd. | 防眩フィルム |
US20050170277A1 (en) * | 2003-10-20 | 2005-08-04 | Luke Zannoni | Fluorinated photoresists prepared, deposited, developed and removed in carbon dioxide |
JPWO2005042453A1 (ja) | 2003-10-31 | 2007-11-29 | 旭硝子株式会社 | 含フッ素化合物、含フッ素ポリマーとその製造方法 |
JP4322097B2 (ja) * | 2003-11-14 | 2009-08-26 | 東京応化工業株式会社 | El表示素子の隔壁、およびel表示素子 |
JP2005162861A (ja) * | 2003-12-02 | 2005-06-23 | Asahi Glass Co Ltd | 含フッ素ポリマー |
US7442487B2 (en) * | 2003-12-30 | 2008-10-28 | Intel Corporation | Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists |
US7081511B2 (en) | 2004-04-05 | 2006-07-25 | Az Electronic Materials Usa Corp. | Process for making polyesters |
JP4407358B2 (ja) | 2004-04-14 | 2010-02-03 | 旭硝子株式会社 | 含フッ素ポリマーおよびレジスト組成物 |
TWI322334B (en) | 2004-07-02 | 2010-03-21 | Rohm & Haas Elect Mat | Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein |
US7691556B2 (en) | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4424246B2 (ja) * | 2004-10-28 | 2010-03-03 | 旭硝子株式会社 | 含フッ素共重合体及びその用途 |
JP4789599B2 (ja) | 2004-12-06 | 2011-10-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトレジスト組成物 |
EP1691238A3 (en) | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
US7834209B2 (en) | 2005-06-07 | 2010-11-16 | E.I. Du Pont De Nemours And Company | Hydrofluoroalkanesulfonic acids from fluorovinyl ethers |
KR101222947B1 (ko) | 2005-06-30 | 2013-01-17 | 엘지디스플레이 주식회사 | 인쇄용 용제, 및 그를 이용한 인쇄용 패턴 조성물 및 패턴 형성방법 |
US7521170B2 (en) | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
EP1762895B1 (en) | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
US7358029B2 (en) * | 2005-09-29 | 2008-04-15 | International Business Machines Corporation | Low activation energy dissolution modification agents for photoresist applications |
US7553905B2 (en) | 2005-10-31 | 2009-06-30 | Az Electronic Materials Usa Corp. | Anti-reflective coatings |
JP5114021B2 (ja) * | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
TWI440978B (zh) * | 2006-02-15 | 2014-06-11 | Sumitomo Chemical Co | 化學增幅正型阻劑組合物 |
US8697343B2 (en) | 2006-03-31 | 2014-04-15 | Jsr Corporation | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition |
US7416991B2 (en) * | 2006-05-11 | 2008-08-26 | Hitachi Global Storage Technologies Netherlands B. V. | High resolution patterning of surface energy utilizing high resolution monomolecular resist for fabrication of patterned media masters |
US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
JP4554665B2 (ja) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
TWI374478B (en) | 2007-02-13 | 2012-10-11 | Rohm & Haas Elect Mat | Electronic device manufacture |
US7838609B2 (en) * | 2007-02-21 | 2010-11-23 | The Nippon Synthetic Chemical Industry Co., Ltd. | Polyvinyl alcohol type resin, monolayer film and laminate |
CN101308329B (zh) | 2007-04-06 | 2013-09-04 | 罗门哈斯电子材料有限公司 | 涂料组合物 |
US7923200B2 (en) | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
JP4562784B2 (ja) | 2007-04-13 | 2010-10-13 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液 |
US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
US20100112299A1 (en) * | 2007-04-19 | 2010-05-06 | Norimitsu Matsushita | Process for producing photosensitive resin printing plate having concave-convex shape and relief printing plate, and plate surface treatment solution for use in the process |
US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
KR100989567B1 (ko) * | 2007-05-15 | 2010-10-25 | 후지필름 가부시키가이샤 | 패턴형성방법 |
US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
WO2008153110A1 (ja) * | 2007-06-12 | 2008-12-18 | Fujifilm Corporation | ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 |
JP4617337B2 (ja) * | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
JP4590431B2 (ja) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
JP5433181B2 (ja) * | 2008-03-28 | 2014-03-05 | 富士フイルム株式会社 | ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 |
US8062830B2 (en) * | 2008-04-21 | 2011-11-22 | Sumitomo Chemical Company, Limited | Chemically amplified positive resist composition |
TWI518456B (zh) * | 2008-04-21 | 2016-01-21 | 住友化學股份有限公司 | 化學放大型正阻劑組成物 |
KR101463290B1 (ko) * | 2008-05-23 | 2014-12-08 | 코넬 유니버시티 | 전자 및 전기 장치에 사용되는 유기 물질의 직교 프로세싱 |
US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
CN102123837B (zh) | 2008-06-20 | 2014-07-09 | 3M创新有限公司 | 聚合物模具和由其制成的制品 |
WO2009154849A1 (en) | 2008-06-20 | 2009-12-23 | 3M Innovative Properties Company | Molded microstructured articles and method of making same |
US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
EP2204694A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
EP2204392A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
JP5440690B2 (ja) * | 2010-03-16 | 2014-03-12 | ダイキン工業株式会社 | 硬化性樹脂組成物、硬化物及び含フッ素重合体 |
JP5619458B2 (ja) * | 2010-03-31 | 2014-11-05 | Hoya株式会社 | レジストパターンの形成方法及びモールドの製造方法 |
JP5602475B2 (ja) | 2010-03-31 | 2014-10-08 | Hoya株式会社 | レジストパターンの形成方法及びモールドの製造方法 |
KR101848955B1 (ko) | 2010-10-04 | 2018-04-13 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 감방사선성 수지 조성물 |
JP5940455B2 (ja) * | 2010-10-15 | 2016-06-29 | Jsr株式会社 | レジストパターン形成方法 |
KR101907705B1 (ko) | 2010-10-22 | 2018-10-12 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 감방사선성 조성물 |
JP5837812B2 (ja) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP5798466B2 (ja) * | 2010-12-27 | 2015-10-21 | Hoya株式会社 | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP5837811B2 (ja) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
EP2472329B1 (en) | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
JP5482722B2 (ja) * | 2011-04-22 | 2014-05-07 | 信越化学工業株式会社 | パターン形成方法 |
US9011591B2 (en) | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
US10738174B2 (en) | 2012-04-23 | 2020-08-11 | International Business Machines Corporation | Aqueous soluble ferrimagnets stabilized by block copolymers |
JP6297269B2 (ja) | 2012-06-28 | 2018-03-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品 |
JP2015028576A (ja) * | 2013-07-01 | 2015-02-12 | 富士フイルム株式会社 | パターン形成方法 |
US9698014B2 (en) * | 2014-07-30 | 2017-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd | Photoresist composition to reduce photoresist pattern collapse |
CN105693102B (zh) * | 2016-01-12 | 2018-08-24 | 中国建筑材料科学研究总院 | 石英玻璃酸刻蚀用掩膜及石英玻璃摆片的酸刻蚀方法 |
JP7395278B2 (ja) * | 2019-07-31 | 2023-12-11 | 日東電工株式会社 | 感光性組成物、デバイス及びデバイスの製造方法 |
Family Cites Families (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3287327A (en) * | 1961-07-27 | 1966-11-22 | Union Carbide Corp | Copolymers of bicyclo [2.2.1] hepta-2, 5-diene |
GB1069737A (en) * | 1963-12-13 | 1967-05-24 | Montedison Spa | Vulcanizable olefin copolymers |
US3444148A (en) | 1964-10-05 | 1969-05-13 | Du Pont | Copolymers of selected polyfluoroper-haloketone adducts with other selected ethylenic compounds |
US3650885A (en) | 1969-04-04 | 1972-03-21 | Sun Chemical Corp | Radiation-curable compositions |
JPS576573B2 (zh) | 1973-11-05 | 1982-02-05 | ||
JPS56139515A (en) | 1980-03-31 | 1981-10-31 | Daikin Ind Ltd | Polyfluoroalkyl acrylate copolymer |
US4382985A (en) | 1980-10-11 | 1983-05-10 | Daikin Kogyo Co., Ltd. | Process for forming film of fluoroalkyl acrylate polymer on substrate and process for preparing patterned resist from the film |
JPS589146A (ja) | 1981-07-09 | 1983-01-19 | Nippon Paint Co Ltd | 水不要平版用版材 |
JPS5833246A (ja) | 1981-08-24 | 1983-02-26 | Oki Electric Ind Co Ltd | ポジ型レジストのパタ−ン形成方法 |
CA1207099A (en) | 1981-12-19 | 1986-07-02 | Tsuneo Fujii | Resist material and process for forming fine resist pattern |
DE3246825A1 (de) | 1982-02-24 | 1983-09-01 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Positives resistmaterial |
US4538250A (en) * | 1982-12-27 | 1985-08-27 | Allied Corporation | Construction and method for elongated towed underwater sonar |
EP0157262B1 (en) | 1984-03-19 | 1988-06-08 | Nippon Oil Co. Ltd. | Novel electron beam resist materials |
JPH0621109B2 (ja) | 1984-07-09 | 1994-03-23 | ダイキン工業株式会社 | 含フツ素アクリル酸エステル |
ATE43924T1 (de) | 1984-08-10 | 1989-06-15 | Siemens Ag | Thermostabiles, durch bestrahlung vernetzbares polymersystem fuer mikroelektronische anwendung. |
US4876322A (en) | 1984-08-10 | 1989-10-24 | Siemens Aktiengesselschaft | Irradiation cross-linkable thermostable polymer system, for microelectronic applications |
US4751166A (en) * | 1984-10-22 | 1988-06-14 | Hoechst Celanese Corp. | Negative working diazo color proofing method |
FR2573069B1 (fr) | 1984-11-09 | 1987-07-17 | Inst Nat Rech Chimique | Nouveaux derives halogenocyclopropaniques, notamment acetals d'halogeno-2 fluoro-2 cyclopropanones, leur procede d'obtention et leur application a la fabrication de fluoro-2 acrylates d'alkyle ou d'aryle |
EP0230656B1 (en) | 1985-12-25 | 1991-03-13 | Tosoh Corporation | Halogen-containing polyacrylate derivatives |
JPS62186907A (ja) | 1986-02-13 | 1987-08-15 | Agency Of Ind Science & Technol | 液体混合物の分離膜 |
EP0240726A3 (en) | 1986-03-05 | 1987-12-09 | Daikin Industries, Limited | Resist material |
JPS62223750A (ja) | 1986-03-26 | 1987-10-01 | Toray Ind Inc | 放射線感応ポジ型レジストおよび該レジスト組成物 |
US4965158A (en) * | 1986-08-01 | 1990-10-23 | Xerox Corporation | Toner compositions with modified charge enhancing additives |
JPH0778629B2 (ja) | 1986-12-19 | 1995-08-23 | ミノルタ株式会社 | ポジ型レジスト膜及びそのレジストパターンの形成方法 |
JPS63158541A (ja) | 1986-12-23 | 1988-07-01 | Tosoh Corp | レジストパタ−ン形成方法 |
JPH087441B2 (ja) | 1986-12-29 | 1996-01-29 | 凸版印刷株式会社 | ポジ型高感度放射線感応性レジスト |
JPS6429837A (en) | 1987-07-27 | 1989-01-31 | Tosoh Corp | Method for forming positive resist pattern |
JPS6429837U (zh) | 1987-08-13 | 1989-02-22 | ||
JPS6449039A (en) | 1987-08-20 | 1989-02-23 | Tosoh Corp | Method for forming positive resist pattern |
WO1989003402A1 (en) | 1987-10-07 | 1989-04-20 | Terumo Kabushiki Kaisha | Ultraviolet-absorbing polymer material and photoetching process |
JPH01118127A (ja) | 1987-10-31 | 1989-05-10 | Fujitsu Ltd | パターン形成方法 |
FR2623510B1 (fr) | 1987-11-20 | 1992-10-23 | Ecole Nale Superieure Chimie | Polymeres a base d'halo et de methacrylates de pentafluorophenyle et leur application a la realisation de fibres optiques, de photoresists positifs, de verres organiques et de resines pour disques optiques |
JPH01276129A (ja) | 1988-04-27 | 1989-11-06 | Sekisui Chem Co Ltd | 感光性樹脂組成物 |
JPH02202904A (ja) | 1989-02-02 | 1990-08-13 | Daikin Ind Ltd | 含フツ素メタクリル酸エステル系重合体及びレジスト材料 |
EP0437619B1 (en) | 1989-07-07 | 1995-08-30 | Daikin Industries, Limited | Fluorinated copolymer and method of producing the same |
US5229473A (en) | 1989-07-07 | 1993-07-20 | Daikin Industries Ltd. | Fluorine-containing copolymer and method of preparing the same |
JP2643599B2 (ja) * | 1989-07-07 | 1997-08-20 | ダイキン工業株式会社 | 含フッ素共重合体およびその製造方法 |
JP2659025B2 (ja) | 1990-01-24 | 1997-09-30 | 富士通株式会社 | 放射線用レジスト及びその製造方法及びパターン形成方法 |
DE4002397A1 (de) | 1990-01-27 | 1991-08-01 | Hoechst Ag | Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
JPH03226756A (ja) | 1990-01-31 | 1991-10-07 | Daikin Ind Ltd | レジスト、その製造方法およびそれを用いるレジストパターンの形成方法 |
JPH04171452A (ja) | 1990-11-02 | 1992-06-18 | Daikin Ind Ltd | レジストおよびそれを用いる微細レジストパターンの形成法 |
JP3032851B2 (ja) | 1991-11-08 | 2000-04-17 | 株式会社野田スクリーン | スクリーン版用樹脂組成物、スクリーン版用フィルム、及びスクリーン版 |
DE4207264B4 (de) | 1992-03-07 | 2005-07-28 | Clariant Gmbh | Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial |
DE4207263A1 (de) | 1992-03-07 | 1993-09-09 | Hoechst Ag | Niedermolekulare saeurespaltbare verbindungen mit 2,2-bis-trifluormethyl-oxaethano-brueckengliedern und deren verwendung |
DE4319178C2 (de) | 1992-06-10 | 1997-07-17 | Fujitsu Ltd | Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator |
US5426164A (en) | 1992-12-24 | 1995-06-20 | The Dow Chemical Company | Photodefinable polymers containing perfluorocyclobutane groups |
JP3277114B2 (ja) | 1995-02-17 | 2002-04-22 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 陰画調レジスト像の作製方法 |
JP3226756B2 (ja) | 1995-06-06 | 2001-11-05 | 本田技研工業株式会社 | サッシレスドアのガラスの組付け位置調整方法及び調整治具 |
JP3046225B2 (ja) * | 1995-06-15 | 2000-05-29 | 東京応化工業株式会社 | ポジ型レジスト膜形成用塗布液 |
JPH0943856A (ja) | 1995-07-26 | 1997-02-14 | Asahi Glass Co Ltd | 含フッ素重合体膜にパターンを形成する方法 |
JPH0943845A (ja) | 1995-07-31 | 1997-02-14 | Fuji Photo Film Co Ltd | ネガ型画像記録材料 |
JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
EP0885405B1 (en) | 1996-03-07 | 2005-06-08 | Sumitomo Bakelite Co., Ltd. | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JP3766140B2 (ja) * | 1996-06-21 | 2006-04-12 | 笠尾 敦司 | 画像加工合成方法およびその装置 |
JPH10142779A (ja) | 1996-11-05 | 1998-05-29 | Fuji Photo Film Co Ltd | 感光性樹脂組成物及び感光性多層シート |
US6110640A (en) | 1996-11-14 | 2000-08-29 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
US5962612A (en) * | 1996-11-28 | 1999-10-05 | Asahi Glass Company Ltd. | Fluorine-containing copolymer having rings on its main chain |
JP3851398B2 (ja) | 1997-01-27 | 2006-11-29 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US5876897A (en) | 1997-03-07 | 1999-03-02 | Clariant Finance (Bvi) Limited | Positive photoresists containing novel photoactive compounds |
JP3650985B2 (ja) * | 1997-05-22 | 2005-05-25 | Jsr株式会社 | ネガ型感放射線性樹脂組成物およびパターン製造法 |
EP0887706A1 (en) * | 1997-06-25 | 1998-12-30 | Wako Pure Chemical Industries Ltd | Resist composition containing specific cross-linking agent |
US6143472A (en) * | 1998-11-18 | 2000-11-07 | Wako Pure Chemical Industries, Ltd. | Resist composition and a method for formation of a pattern using the composition |
IL141803A0 (en) * | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
US6884562B1 (en) * | 1998-10-27 | 2005-04-26 | E. I. Du Pont De Nemours And Company | Photoresists and processes for microlithography |
DE60013270T2 (de) | 1999-05-04 | 2005-09-22 | E.I. Du Pont De Nemours And Co., Wilmington | Polyfluorierte epoxide und assozierte polymere und verfahren |
US6790587B1 (en) * | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
EP1183571B1 (en) | 1999-05-04 | 2010-06-02 | E.I. Du Pont De Nemours And Company | Fluorinated photoresists and processes for microlithography |
WO2001085811A2 (en) * | 2000-05-05 | 2001-11-15 | E.I. Du Pont De Nemours And Company | Copolymers for photoresists and processes therefor |
WO2003040827A1 (en) * | 2001-10-26 | 2003-05-15 | E. I. Du Pont De Nemours And Company | Fluorinated polymers having ester groups and photoresists for microlithography |
US6875555B1 (en) * | 2003-09-16 | 2005-04-05 | E.I. Du Pont De Nemours And Company | Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes) |
-
1999
- 1999-09-21 IL IL14180399A patent/IL141803A0/xx unknown
- 1999-09-21 WO PCT/US1999/021912 patent/WO2000017712A1/en active IP Right Grant
- 1999-09-21 AU AU60560/99A patent/AU6056099A/en not_active Abandoned
- 1999-09-21 US US09/806,096 patent/US6593058B1/en not_active Expired - Lifetime
- 1999-09-21 DE DE69926532T patent/DE69926532T2/de not_active Expired - Lifetime
- 1999-09-21 JP JP2000571312A patent/JP4327360B2/ja not_active Expired - Lifetime
- 1999-09-21 EP EP99969504A patent/EP1131677B1/en not_active Expired - Lifetime
- 1999-09-21 CN CNB998113069A patent/CN1253759C/zh not_active Expired - Lifetime
- 1999-09-28 TW TW088116348A patent/TWI221944B/zh active
-
2002
- 2002-03-04 HK HK02101647.3A patent/HK1041055A1/zh unknown
-
2003
- 2003-05-14 US US10/437,760 patent/US7276323B2/en not_active Expired - Lifetime
-
2009
- 2009-04-08 JP JP2009094338A patent/JP2009161770A/ja active Pending
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WO2000017712A1 (en) | 2000-03-30 |
US7276323B2 (en) | 2007-10-02 |
JP2009161770A (ja) | 2009-07-23 |
EP1131677B1 (en) | 2005-08-03 |
US6593058B1 (en) | 2003-07-15 |
CN1253759C (zh) | 2006-04-26 |
US20040023152A1 (en) | 2004-02-05 |
JP4327360B2 (ja) | 2009-09-09 |
DE69926532D1 (de) | 2005-09-08 |
AU6056099A (en) | 2000-04-10 |
JP2002525683A (ja) | 2002-08-13 |
HK1041055A1 (zh) | 2002-06-28 |
DE69926532T2 (de) | 2006-06-01 |
EP1131677A1 (en) | 2001-09-12 |
TWI221944B (en) | 2004-10-11 |
CN1319199A (zh) | 2001-10-24 |
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