AU2001274579A1 - Resist composition - Google Patents
Resist compositionInfo
- Publication number
- AU2001274579A1 AU2001274579A1 AU2001274579A AU7457901A AU2001274579A1 AU 2001274579 A1 AU2001274579 A1 AU 2001274579A1 AU 2001274579 A AU2001274579 A AU 2001274579A AU 7457901 A AU7457901 A AU 7457901A AU 2001274579 A1 AU2001274579 A1 AU 2001274579A1
- Authority
- AU
- Australia
- Prior art keywords
- resist composition
- resist
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-185608 | 2000-06-21 | ||
JP2000185608 | 2000-06-21 | ||
JP2000-364489 | 2000-11-30 | ||
JP2000364489 | 2000-11-30 | ||
PCT/JP2001/005311 WO2001098834A1 (en) | 2000-06-21 | 2001-06-21 | Resist composition |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001274579A1 true AU2001274579A1 (en) | 2002-01-02 |
Family
ID=26594327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001274579A Abandoned AU2001274579A1 (en) | 2000-06-21 | 2001-06-21 | Resist composition |
Country Status (5)
Country | Link |
---|---|
US (1) | US6916590B2 (en) |
EP (1) | EP1302813A4 (en) |
KR (1) | KR20030076228A (en) |
AU (1) | AU2001274579A1 (en) |
WO (1) | WO2001098834A1 (en) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4117468B2 (en) * | 2001-02-09 | 2008-07-16 | 旭硝子株式会社 | Fluorine-containing compound, fluorine-containing polymer and production method thereof |
US6893792B2 (en) * | 2002-02-19 | 2005-05-17 | Sumitomo Chemical Company, Limited | Positive resist composition |
JP2003330196A (en) * | 2002-03-05 | 2003-11-19 | Jsr Corp | Radiation-sensitive resin composition |
CN1896039A (en) * | 2002-08-21 | 2007-01-17 | 旭硝子株式会社 | Fluorinated compound |
JPWO2004035641A1 (en) * | 2002-10-18 | 2006-02-16 | ダイキン工業株式会社 | Method for producing fluoropolymer and photoresist composition |
WO2004042475A1 (en) * | 2002-11-07 | 2004-05-21 | Asahi Glass Company, Limited | Resist composition |
AU2003277582A1 (en) * | 2002-11-07 | 2004-06-07 | Asahi Glass Company, Limited | Fluoropolymer |
KR100498464B1 (en) * | 2002-11-22 | 2005-07-01 | 삼성전자주식회사 | Photosensitive polymer including fluorine, resist composition containing the same and pattern formation method using the resist composition |
US20040166434A1 (en) | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
JP4289937B2 (en) * | 2003-03-28 | 2009-07-01 | 東京応化工業株式会社 | Photoresist composition and resist pattern forming method using the same |
JP4012480B2 (en) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | Fine pattern formation aid and process for producing the same |
JP2005099646A (en) * | 2003-03-28 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | Resist composition for liquid immersion lithography process, and resist pattern forming method using it |
JP2005029527A (en) * | 2003-07-09 | 2005-02-03 | Central Glass Co Ltd | Fluorine-based cyclic compound, fluorine-based polymerizable monomer, fluorine-based polymer compound, resist material using the same and pattern-forming method using the same |
JP4426526B2 (en) | 2003-07-17 | 2010-03-03 | ハネウエル・インターナシヨナル・インコーポレーテツド | State-of-the-art planarization films for microelectronics applications and devices and methods for their manufacture |
JP2005097531A (en) * | 2003-08-21 | 2005-04-14 | Asahi Glass Co Ltd | Fluorocopolymer, method of producing the same, and resist composition containing the same |
EP1679297B1 (en) * | 2003-10-31 | 2009-08-05 | Asahi Glass Company, Limited | Fluorine compound, fluoropolymer, and process for producing the same |
US7473512B2 (en) | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
WO2005108446A1 (en) * | 2004-05-07 | 2005-11-17 | Asahi Glass Company, Limited | Fluorine-containing copolymer, method for producing same and resist composition containing same |
EP1772468A4 (en) * | 2004-07-30 | 2008-07-30 | Asahi Glass Co Ltd | Fluorine-containing compound, fluorine-containing polymer, resist composition and resist protective film composition |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
US20060177772A1 (en) * | 2005-02-10 | 2006-08-10 | Abdallah David J | Process of imaging a photoresist with multiple antireflective coatings |
US20060249332A1 (en) * | 2005-05-06 | 2006-11-09 | General Electric Company | Oil supply and scavenge system |
US20070065756A1 (en) * | 2005-09-16 | 2007-03-22 | Quantiscript Inc., Universite De Sherbrooke | High sensitivity electron beam resist processing |
US7704670B2 (en) * | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
US20070298349A1 (en) * | 2006-06-22 | 2007-12-27 | Ruzhi Zhang | Antireflective Coating Compositions Comprising Siloxane Polymer |
US7638262B2 (en) | 2006-08-10 | 2009-12-29 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
US7416834B2 (en) | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US7666575B2 (en) | 2006-10-18 | 2010-02-23 | Az Electronic Materials Usa Corp | Antireflective coating compositions |
US7824844B2 (en) * | 2007-01-19 | 2010-11-02 | Az Electronic Materials Usa Corp. | Solvent mixtures for antireflective coating compositions for photoresists |
US8026040B2 (en) | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
US7736837B2 (en) | 2007-02-20 | 2010-06-15 | Az Electronic Materials Usa Corp. | Antireflective coating composition based on silicon polymer |
CN101622297A (en) * | 2007-02-26 | 2010-01-06 | Az电子材料美国公司 | The method for preparing siloxane polymer |
EP2121808A1 (en) | 2007-02-27 | 2009-11-25 | AZ Electronic Materials USA Corp. | Silicon-based antifrelective coating compositions |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (en) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | Water-soluble resin composition for forming fine pattern and fine pattern forming method using the same |
US8017296B2 (en) * | 2007-05-22 | 2011-09-13 | Az Electronic Materials Usa Corp. | Antireflective coating composition comprising fused aromatic rings |
US20090035704A1 (en) * | 2007-08-03 | 2009-02-05 | Hong Zhuang | Underlayer Coating Composition Based on a Crosslinkable Polymer |
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US20090162800A1 (en) * | 2007-12-20 | 2009-06-25 | David Abdallah | Process for Imaging a Photoresist Coated over an Antireflective Coating |
TWI452419B (en) * | 2008-01-28 | 2014-09-11 | Az Electronic Mat Ip Japan Kk | Fine pattern mask, process for producing the same, and process for forming fine pattern by using the same |
US7989144B2 (en) * | 2008-04-01 | 2011-08-02 | Az Electronic Materials Usa Corp | Antireflective coating composition |
US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
US7932018B2 (en) * | 2008-05-06 | 2011-04-26 | Az Electronic Materials Usa Corp. | Antireflective coating composition |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US20100119980A1 (en) * | 2008-11-13 | 2010-05-13 | Rahman M Dalil | Antireflective Coating Composition Comprising Fused Aromatic Rings |
US20100119979A1 (en) * | 2008-11-13 | 2010-05-13 | Rahman M Dalil | Antireflective Coating Composition Comprising Fused Aromatic Rings |
US20100151392A1 (en) * | 2008-12-11 | 2010-06-17 | Rahman M Dalil | Antireflective coating compositions |
US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
US20100316949A1 (en) * | 2009-06-10 | 2010-12-16 | Rahman M Dalil | Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings |
US8551686B2 (en) * | 2009-10-30 | 2013-10-08 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
US8486609B2 (en) * | 2009-12-23 | 2013-07-16 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8445181B2 (en) | 2010-06-03 | 2013-05-21 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8852848B2 (en) | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
US20120122029A1 (en) | 2010-11-11 | 2012-05-17 | Takanori Kudo | Underlayer Developable Coating Compositions and Processes Thereof |
US8465902B2 (en) | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
US8906590B2 (en) | 2011-03-30 | 2014-12-09 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8623589B2 (en) | 2011-06-06 | 2014-01-07 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions and processes thereof |
US8568958B2 (en) | 2011-06-21 | 2013-10-29 | Az Electronic Materials Usa Corp. | Underlayer composition and process thereof |
JP5889568B2 (en) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Composition for forming tungsten oxide film and method for producing tungsten oxide film using the same |
US8906592B2 (en) | 2012-08-01 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9315636B2 (en) | 2012-12-07 | 2016-04-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds, their compositions and methods |
US9291909B2 (en) | 2013-05-17 | 2016-03-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Composition comprising a polymeric thermal acid generator and processes thereof |
US9152051B2 (en) | 2013-06-13 | 2015-10-06 | Az Electronics Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9201305B2 (en) | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
US9296922B2 (en) | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
US9418836B2 (en) | 2014-01-14 | 2016-08-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
US9274426B2 (en) | 2014-04-29 | 2016-03-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating compositions and processes thereof |
US9499698B2 (en) | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
US10241409B2 (en) | 2015-12-22 | 2019-03-26 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Materials containing metal oxides, processes for making same, and processes for using same |
KR102477802B1 (en) | 2016-12-21 | 2022-12-15 | 메르크 파텐트 게엠베하 | Composition of Spin-On Materials Containing Metal Oxide Nanoparticles and Organic Polymers |
US11042091B2 (en) | 2017-09-06 | 2021-06-22 | Merck Patent Gmbh | Spin-on inorganic oxide containing composition useful as hard masks and filling materials with improved thermal stability |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63238115A (en) * | 1987-03-27 | 1988-10-04 | Asahi Glass Co Ltd | Production of fluorine-containing copolymer having cyclic structure |
DE69926532T2 (en) * | 1998-09-23 | 2006-06-01 | E.I. Du Pont De Nemours And Co., Wilmington | PHOTORESISTS, POLYMERS AND METHODS FOR MICROLITHOGRAPHY |
JP4402304B2 (en) | 1999-05-04 | 2010-01-20 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Fluorinated polymers, photoresists and methods for microlithography |
JP3915870B2 (en) * | 1999-08-25 | 2007-05-16 | 信越化学工業株式会社 | Polymer compound, chemically amplified resist material, and pattern forming method |
JP3672780B2 (en) * | 1999-11-29 | 2005-07-20 | セントラル硝子株式会社 | Positive resist composition and pattern forming method |
US6468712B1 (en) | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
KR20020032025A (en) * | 2000-10-25 | 2002-05-03 | 박종섭 | Photoresist monomer comprising bisphenol derivative and polymer thereof |
US6730452B2 (en) * | 2001-01-26 | 2004-05-04 | International Business Machines Corporation | Lithographic photoresist composition and process for its use |
US6509134B2 (en) * | 2001-01-26 | 2003-01-21 | International Business Machines Corporation | Norbornene fluoroacrylate copolymers and process for the use thereof |
WO2002077710A2 (en) * | 2001-03-22 | 2002-10-03 | Shipley Company, L.L.C. | Photoresist compositions for short wavelength imaging |
JP4010160B2 (en) * | 2002-03-04 | 2007-11-21 | 旭硝子株式会社 | Resist composition |
-
2001
- 2001-06-21 EP EP01941152A patent/EP1302813A4/en not_active Withdrawn
- 2001-06-21 KR KR1020027016661A patent/KR20030076228A/en not_active Application Discontinuation
- 2001-06-21 WO PCT/JP2001/005311 patent/WO2001098834A1/en not_active Application Discontinuation
- 2001-06-21 AU AU2001274579A patent/AU2001274579A1/en not_active Abandoned
-
2002
- 2002-12-19 US US10/322,665 patent/US6916590B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1302813A4 (en) | 2005-02-23 |
KR20030076228A (en) | 2003-09-26 |
US6916590B2 (en) | 2005-07-12 |
US20030148213A1 (en) | 2003-08-07 |
EP1302813A1 (en) | 2003-04-16 |
WO2001098834A1 (en) | 2001-12-27 |
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